Jung-Chen
Jung-Chen Chien, Jhubei City TW
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20100123381 | CATHODE DISCHARGE APPARATUS - A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels. | 05-20-2010 |
20140123900 | GAS SHOWER DEVICE HAVING GAS CURTAIN AND APPARATUS FOR DEPOSITING FILM USING THE SAME - A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency. | 05-08-2014 |
Jung-Chen Lee, Suwon-Si KR
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20120077319 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING EPITAXIAL BLOCKING LAYERS - A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer. | 03-29-2012 |
Jung-Chen Liao, Taiping City TW
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20110259161 | Screwdriver - A screwdriver comprises a shaft, and a handle core, a handle body and an outer layer formed on the shaft by injection molding. The multilayer structure of the screwdriver prevents the impact force from being transmitted to the user's hand and causing discomfort, and can relieve the discomfort caused by the impact force applied to the screwdriver while reducing the impact force loss during impact operation. | 10-27-2011 |
Jung-Chen Lin, Tainan City TW
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20140197413 | PIXEL STRUCTURE AND PIXEL ARRAY SUBSTRATE - The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening. | 07-17-2014 |
Jung-Chen Lin, Taipei City TW
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20150316801 | DISPLAY PANEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A display panel structure and a manufacturing method thereof are disclosed. The display panel structure comprises a first substrate, a second substrate, at least a liquid crystal display (LCD) array, a plurality of LCD units, a plurality of first sealants and at least a second sealant. The second substrate is disposed corresponding to the first substrate. The LCD array is disposed between the first substrate and the second substrate. The LCD units are disposed within the LCD array. The first sealants are disposed around the LCD units, respectively. The second sealant is disposed around the LCD array in annulus. Thereby, the problems of the substrate peeling and fragment occurring in the process of the dorsal plating forming a conducting layer can be improved, and besides, the internal strike effect of the liquid crystal can be restrained, so as to enhance the technical yield. | 11-05-2015 |