Patent application number | Description | Published |
20110001135 | METHOD FOR MANUFACTURING SELF-ALIGNED THIN-FILM TRANSISTOR AND STRUCTURE THEREOF - A method for manufacturing a self-aligned thin-film transistor (TFT) is described. Firstly, an oxide gate, a dielectric layer, and a photoresist layer are deposited on a first surface of a transparent substrate in sequence. Then, an ultraviolet light is irradiated on a second surface of the substrate opposite to the first surface to expose the photoresist layer, in which a gate manufactured by the oxide gate serves as a mask, and absorbs the ultraviolet light irradiated on the photoresist layer corresponding to the oxide gate. Then, the exposed photoresist layer is removed, and a transparent conductive layer is deposited on the unexposed photoresist layer and the dielectric layer. Then, a patterning process is executed on the transparent conductive layer to form a source and a drain, and an active layer is formed to cover the source, the drain, and the dielectric layer, so as to finish a self-aligned TFT structure. | 01-06-2011 |
20120112180 | METAL OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately on the active layer, and a threshold voltage modulation layer formed on the active layer in direct contact with the back channel of the transistor. The threshold voltage modulation layer and the active layer have different work functions so that the threshold voltage modulation layer modulates the threshold voltage of devices and improve the performance of the transistor. | 05-10-2012 |
20120223370 | BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME - A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain. | 09-06-2012 |
20130005077 | APPARATUS AND METHOD OF MANUFACTURING ORGANIC ELECTRONIC COMPONENT - A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof. | 01-03-2013 |
20140045298 | METHOD FOR MANUFACTURING ORGANIC ELECTRONIC COMPONENT HAVING SLAT COMPOUND - A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer. | 02-13-2014 |
Patent application number | Description | Published |
20090167663 | Liquid Crystal Display Apparatus and Bandgap Reference Circuit Thereof - A liquid crystal display apparatus comprises a system-on-glass (SOG) and a bandgap reference (BGR) circuit. The BGR circuit, which is formed on the SOG, comprises a current mirror set and a diode set. The current mirror set is configured to generate a plurality of fixed currents. The diode set, which is formed by a plurality of diode-connected thin film transistors (TFT), is configured to generate a BGR voltage according to the fixed currents. | 07-02-2009 |
20110159171 | Method for preparing organic light emitting diode and device thereof - A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components. | 06-30-2011 |
20110284949 | VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME - A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer. | 11-24-2011 |
20120018718 | Self-aligned top-gate thin film transistors and method for fabricating same - A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device. | 01-26-2012 |
20120086431 | VERTICAL TYPE SENSOR - The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection. | 04-12-2012 |
20120188627 | SMART WINDOW AND SMART WINDOW SYSTEM USING THE SAME - A smart window includes a windowpane, at least one sensor and a wireless signal transceiver. The sensor is disposed on the windowpane and configured for detecting an environmental factor and accordingly outputting a sensing signal. The wireless signal transceiver is disposed on the windowpane and electrically connected to the sensor. The wireless signal transceiver is configured for further transmitting the sensing signal from the sensor. A smart window system includes the aforementioned smart window. The smart window and the smart window system adopt wireless communication manner to transmit the sensing signals, and thereby the smart window system has an overall modulation to an environmental factor. | 07-26-2012 |
20120235120 | VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME - A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors. | 09-20-2012 |
20120325318 | SOLAR CELL AND FABRICATION METHOD THEREOF - A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss. | 12-27-2012 |
20130045567 | METHODS FOR MANUFACTURING A METAL-OXIDE THIN FILM TRANSISTOR - Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C. | 02-21-2013 |
20130146868 | FIELD EFFECT TRANSISTOR - A field effect transistor (FET) is provided. The active layer of this FET is composed of at least two different amorphous metal oxide semiconductor layer stacked together. Therefore, the two opposite surfaces of the active layer can have different band gap values. | 06-13-2013 |
20130153891 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a thin film transistor, which includes a metal oxide semiconductor layer, an insulating layer, a gate electrode, a source electrode and a drain electrode. The metal oxide semiconductor layer includes a channel region having at least one first region and a second region. The first region has an oxygen vacancy concentration greater than an oxygen vacancy concentration of the second region. The second region surrounds the first region. A method for manufacturing the thin film transistor is disclosed as well. | 06-20-2013 |
20140034944 | DISPLAY PANEL, THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) including a gate, a dielectric layer, a metal-oxide semiconductor channel, a source, and a drain is provided. The gate and the metal-oxide semiconductor channel are overlapped. The gate, the source, and the drain are separated by the dielectric layer. Besides, the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel. The metal-oxide semiconductor channel includes a metal-oxide semiconductor layer and a plurality of nano micro structures disposed in the metal-oxide semiconductor layer and separated from one another. In another aspect, a display panel including the TFT and a method of fabricating the TFT are also provided. | 02-06-2014 |
20140209883 | VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME - A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors. | 07-31-2014 |
20140213006 | METHOD FOR FORMING VERTICAL TYPE SENSOR - The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection. | 07-31-2014 |
20140326989 | ACTIVE DEVICE - An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain. | 11-06-2014 |
20140367707 | DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A manufacturing method of a display panel including following steps is provided. An active device substrate including a first plate, active devices disposed on the first plate and pixel electrodes electrically connected to the active devices is provided. A display medium substrate including a second plate and a display medium disposed on the second plate is provided. The pixel electrodes are electrically connected to the display medium by a conductor. Moreover, a display panel manufactured by the manufacturing method is also provided. | 12-18-2014 |
20150233851 | SEMICONDUCTOR SENSING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided. | 08-20-2015 |
Patent application number | Description | Published |
20110116545 | METHODS AND DEVICES FOR IN-LOOP VIDEO DEBLOCKING - A video encoder sends at least some information regarding boundary strength to the decoder along with the bitstream of encoded video. The decoder is configured to use the received boundary strength information from the encoder to reduce the number of computations necessary for the decoder to determine the boundary strength details required for performing deblocking when decoding the bitstream. | 05-19-2011 |
20110200101 | METHOD AND ENCODER FOR CONSTRAINED SOFT-DECISION QUANTIZATION IN DATA COMPRESSION - A method of encoding a video using constrained soft-decision quantization. The soft-decision quantization includes first performing hard-decision quantization to obtain hard quantized coefficients and, then, obtaining a soft quantized coefficient using a rate-distortion calculation over a search range of quantization levels for a transform domain coefficient, wherein the search range of quantization levels for that transform domain coefficient is constrained within a number of quantization levels of a corresponding hard quantized coefficient. The search range may be based upon a fixed threshold, the coefficient position, the hard quantized coefficient magnitude, a threshold value less accumulated distortion, or other factors, including combinations of these factors. The accumulated distortion may be measured by an L1 norm. | 08-18-2011 |
20110249748 | METHODS AND DEVICES FOR INCORPORATING DEBLOCKING INTO ENCODED VIDEO - Encoders and methods of encoding that incorporate deblocking into the encoding process. An encoder performs a two-cycle encoding process. First, an original block is processed and then reconstructed and deblocked. The reconstruction and the deblocked reconstruction are compared to the original and an intermediate block is created that contains the portions of the reconstruction or the deblocked reconstruction that are more similar to the original. In the second cycle, the intermediate block serves to generate a modified original block, which is then used in a prediction process to create a new prediction block. The new prediction block as compared to the original gives new residuals. The new prediction and new residuals are entropy coded to generate the encoded video data. The new prediction block and new residuals incorporate the deblocking elements selectively identified during the first cycle, thereby eliminating the need for deblocking at the decoder. The prediction operation may be motion prediction or spatial prediction. | 10-13-2011 |
20130101046 | SIGNIFICANCE MAP ENCODING AND DECODING USING PARTITION SELECTION - Methods of encoding and decoding for video data are describe in which significance maps are encoded and decoded using non-spatially-uniform partitioning of the map into parts, wherein the bit positions within each part are associated with a given context. Example partition sets and processes for selecting from amongst predetermined partition sets and communicating the selection to the decoder are described. | 04-25-2013 |
20150043652 | SIGNIFICANCE MAP ENCODING AND DECODING USING PARTITION SELECTION - Methods of encoding and decoding for video data are describe in which significance maps are encoded and decoded using non-spatially-uniform partitioning of the map into parts, wherein the bit positions within each part are associated with a given context. Example partition sets and processes for selecting from amongst predetermined partition sets and communicating the selection to the decoder are described. | 02-12-2015 |
Patent application number | Description | Published |
20080240131 | Teredo connectivity between clients behind symmetric NATs - Methods and systems for communicating between Teredo clients behind UPnP-enabled symmetric or restricted Network Address Translators. | 10-02-2008 |
20080253383 | Communicating using the port-preserving nature of symmetric network address translators - Methods for establishing connections between computing devices when the computing devices are behind Network Address Translators (NATs). Embodiments of the present invention are directed to enabling a first client computer to communicate with a second client computer when both client computers are positioned behind NATs, wherein at least one of the NATs is a port-preserving NAT. | 10-16-2008 |
20090109995 | AD HOC WIRELESS NETWORKING - A software architecture providing ad hoc wireless networking capabilities. The software architecture may be compatible with wireless devices, such as UWB devices operating according to the WLP communication protocol. The software architecture may include user mode and kernel mode modules, and may include a multiplexing driver framework to enable system connection to multiple ad hoc networks. | 04-30-2009 |
20110134799 | AD HOC WIRELESS NETWORKING - A software architecture providing ad hoc wireless networking capabilities. The software architecture may be compatible with wireless devices, such as UWB devices operating according to the WLP communication protocol. The software architecture may include user mode and kernel mode modules, and may include a multiplexing driver framework to enable system connection to multiple ad hoc networks. | 06-09-2011 |
20130138813 | ROLE INSTANCE REACHABILITY IN DATA CENTER - Individual role instance reachability and load balancing are simultaneously provided for role instances of an application running in a hosting environment. Instance endpoints may be assigned to each role instance. Each instance endpoint may comprise a combination of an IP address, a transport protocol, and a unique port number. Additionally, a load balanced endpoint may be assigned to the group of role instances. The load balanced endpoint may comprise a combination of an IP address, transport protocol, and another unique port number. When application messages are issued to the data center, the messages are routed in accordance with endpoints used by the messages. For an instance endpoint, the message is routed to a role instance corresponding with the instance endpoint without load balancing. For the load balanced endpoint, the message is routed to any one of the role instances using load balancing. | 05-30-2013 |