Patent application number | Description | Published |
20100042640 | Migration Apparatus Which Convert SAM/VSAM Files of Mainframe System into SAM/VSAM Files of Open System and Method for Thereof - Provided are a migration apparatus and method for converting a sequential access method (SAM)/virtual storage access method (VSAM) file of a mainframe system into an appropriate SAM/VSAM file for an open system. The migration apparatus includes: an information obtaining module for obtaining various file information on a SAM file of the mainframe system; a data obtaining module for obtaining actual data of the SAM file of the mainframe system composed of Extended Binary Coded Decimal Interchange Code (EBCDIC) in binary format; a code conversion module for converting the obtained actual data composed of EBCDIC into American Standard Code for Information Interchange (ASCII) code; a file combination module for combining the obtained file information on the SAM file with the actual data corresponding to the file information and converted into ASCII code; and a file registration module for registering the file information of the combined SAM file in the open system. The migration apparatus and method efficiently reuse a conventionally used SAM/VSAM file during a rehosting process of converting a mainframe system into an open system. | 02-18-2010 |
20100112803 | Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation - Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall. | 05-06-2010 |
20110104889 | Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation - Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall. | 05-05-2011 |
20120142179 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern. | 06-07-2012 |
20120225554 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM - A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film. | 09-06-2012 |
20160104746 | METHODS OF FABRICATING A VARIABLE RESISTANCE MEMORY DEVICE USING MASKING AND SELECTIVE REMOVAL - A semiconductor device is fabricated by forming a semiconductor layer on a substrate, patterning the semiconductor layer in a first direction parallel to a top surface of the substrate to form semiconductor patterns extending parallel to the first direction, forming sacrificial patterns in gap regions between the semiconductor patterns, forming mask patterns on the semiconductor patterns and the sacrificial patterns extending parallel to a second direction crossing the first direction, removing the sacrificial patterns, and patterning the semiconductor patterns using the mask patterns as an etch mask to form an array of selection devices for a variable resistance memory device on the substrate. | 04-14-2016 |