Patent application number | Description | Published |
20080239804 | Method for reading multiple-value memory cells - A read method for multiple-value information in a semiconductor memory such as a nonvolatile semiconductor memory is introduced. The method includes obtaining a first data from a selected multiple-value memory cell by applying a first voltage to a control gate of the selected multiple-value memory cell. A second data from the selected multiple-value memory cell is obtained by applying a second voltage to the control gate of the selected multiple-value memory cell. A first bit of the plurality of bits stored in the selected multiple-value memory cell is then obtained by performing a predetermined calculation on the first data and the second data. A second bit of the plurality of bits is obtained from the selected multiple-value memory cell by applying a third voltage to the control gate of the selected multiple-value memory cell. | 10-02-2008 |
20080246052 | Electronic component assembly with composite material carrier - The present invention relates to an electronic component assembly including a composite material carrier, a circuit carrier made of a dielectric material, a circuit with a conductive material formed on the circuit carrier, an intermediate layer between the circuit carrier and the composite material carrier, and an electronic component arranged on the composite material carrier and electrically connecting to the circuit. | 10-09-2008 |
20090173963 | Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 07-09-2009 |
20100120184 | OPTOELECTRONIC DEVICE STRUCTURE - The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer. | 05-13-2010 |
20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 11-11-2010 |
20100290282 | METHOD AND SYSTEM FOR ADAPTIVELY FINDING REFERENCE VOLTAGES FOR READING DATA FROM A MLC FLASH MEMORY - A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory. | 11-18-2010 |
20100321997 | Method And System For Obtaining A Reference Block For A MLC Flash Memory - A method and system for obtaining a reference block on which reference voltages may be found for a MLC flash memory are disclosed. A first block and a second block are provided in the flash memory. A memory controller alternatively controls one of the first and the second blocks to act as the reference block and the other one as a cycle block in a respective period, during which the reference block stays idle and the cycle block is subjected to program/erase cycles. | 12-23-2010 |
20110038205 | Method Of Reducing Bit Error Rate For A Flash Memory - A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the neighboring page at least two more times using at least two distinct read voltages respectively. The threshold-voltage distributions associated with an original page and the neighboring page are transferred according to the read data and the flag. | 02-17-2011 |
20110038209 | Method and System for Adaptively Finding Reference Voltages for Reading Data from a MLC Flash Memory - A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, a first total number of cells of the flash memory above a first threshold voltage in a shifted threshold voltage distribution is provided. Search to find a second threshold voltage such that a second total number of the cells above the second threshold voltage is approximate to the first total number. An initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to a voltage difference between the second threshold voltage and the first threshold voltage, thereby resulting in a new reference voltage or voltages for reading the data from the MLC flash memory. | 02-17-2011 |
20110044101 | METHOD AND SYSTEM OF FINDING A READ VOLTAGE FOR A FLASH MEMORY - A method and system of finding a read voltage for a flash memory is disclosed. Data are read from array cells of the flash memory with a default read voltage, and a recorded state bit number that is recorded during programming is also read. Determine an optimal read voltage if the readout data do not pass the error correction control (ECC). Data are then re-read from the array cells of the flash memory with the determined optimal read voltage. | 02-24-2011 |
20110055659 | Method and System of Dynamic Data Storage for Error Correction in a Memory Device - A method of dynamic data storage for error correction in a memory device is disclosed. Data for storage is received, and the received data is then encoded and associated error correction code (ECC) is generated. The encoded data is stored in a portion of a data partition of the memory device, wherein percentage of the stored data in the data partition is determined according to an amount of corrected errors associated with the data partition or is predetermined. | 03-03-2011 |
20110072191 | Uniform Coding System for a Flash Memory - A uniform coding system for a flash memory is disclosed. A statistic decision unit determines a coding word according to a plurality of inputs. An inverse unit controllably inverts input data to be encoded. The input data are then encoded into encoded data according to a statistic determined by the statistic decision unit. | 03-24-2011 |
20110131459 | Memory Device with Protection Capability and Method of Accessing Data Therein - The present invention is directed to a memory device with protection capability and a method of accessing data therein. A spreader encrypts input user data according to an entered password, and the encrypted data is then stored in a storage area. A despreader performs reverse process of the spreader on the stored data according to the entered password. | 06-02-2011 |
20110193119 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. | 08-11-2011 |
20110199369 | DISPLAY WITH CLK PHASE OR DATA PHASE AUTO-ADJUSTING MECHANISM AND METHOD OF DRIVING SAME - One aspect of the present invention relates to a display for displaying data. In one embodiment, the display includes a timing controller (TCON) configured to provide a plurality of data signals to be displayed, at least one clock signal and a data training code corresponding to at least one clock signal; a plurality of source drivers, each source driver configured to receive one or more corresponding data signals, the at least one clock signal and the data training code from the TCON, generate a plurality of data phase signals according to the one or more corresponding data signals, select one data signal from the plurality of data phase signals as an optimal data signal according to the data training code, and latch the one or more corresponding data signals according to the optimal data signal; and a display panel configured to display the plurality of latched data received from the plurality of source drivers. | 08-18-2011 |
20110241057 | HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad. | 10-06-2011 |
20110254046 | LIGHT-EMITTING DEVICE - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 10-20-2011 |
20120055532 | SEMICONDUCTOR OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate. | 03-08-2012 |
20120138892 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate, and a light-emitting structure formed on the substrate. The light-emitting structure comprises a first active layer emitting the light with a first wavelength, and a second active layer emitting the light with a second wavelength. The light-emitting structure is formed by the first active layer and the second active layer stacked alternately. | 06-07-2012 |
20120256164 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system. | 10-11-2012 |
20130179749 | METHOD AND SYSTEM OF DYNAMIC DATA STORAGE FOR ERROR CORRECTION IN A MEMORY DEVICE - A method of dynamic data storage for error correction in a memory device is disclosed. Data for storage is received, the received data is encoded and error correction code (ECC) is generated. The encoded data is stored in the memory device that includes a plurality of pages each having a plurality of data partitions. More corrected errors a marked page has, a smaller portion with a space of at least one datum of each of the corresponding data partitions associated with the marked page is allocated to store the encoded data, while a size of the ECC is fixed, thereby increasing capability of correcting errors in the marked page. | 07-11-2013 |
20130200414 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; wherein the first surface and the surface comprise an included angle larger than zero; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 08-08-2013 |
20140014994 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. | 01-16-2014 |
20140021505 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer. | 01-23-2014 |
20140048768 | LIGHT-EMITTING DEVICE - A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb. | 02-20-2014 |
20140070250 | LIGHT-EMITTING DEVICE - A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change. | 03-13-2014 |
20140159090 | light emitting device - A light-emitting device is disclosed and comprises: a semiconductor stack; a transparent substrate comprising a first material; a bonding layer which bonds the semiconductor stack and the transparent substrate; and a medium in the transparent substrate, the medium comprising a second material different from the first material. | 06-12-2014 |
20140162386 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface. | 06-12-2014 |
20140175493 | Light-Emitting Device - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width. | 06-26-2014 |
20150084086 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 03-26-2015 |