Patent application number | Description | Published |
20080239797 | INFORMATION RECORDING/REPRODUCING DEVICE - There is proposed a nonvolatile information recording/reproducing device with low power consumption and high thermal stability. The information recording/reproducing device according to an aspect of the present invention includes a recording layer, and mechanism for recording information by generating a phase change in the recording layer while applying a voltage to the recording layer. The recording layer is comprised one of a Wolframite structure and a Scheelite structure. | 10-02-2008 |
20100008209 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure. | 01-14-2010 |
20100074001 | INFORMATION RECORDING/REPRODUCING DEVICE - The information recording/reproducing device includes a stacked structure which is comprised of an electrode layer and a recording layer, a buffer layer which contacts with the recording layer and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer is comprised of a complex compound having two cations, and one of the cations is a transition element having ādā orbit where electrons are incompletely filled. The recording layer is comprised of Cu | 03-25-2010 |
20100127235 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is A | 05-27-2010 |
20100142091 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is A | 06-10-2010 |
20100237314 | RESISTANCE CHANGE TYPE MEMORY - A resistance change type memory of an aspect of the present invention including a first wiring configured to extend in a first direction, a second wiring configured to extend in a second direction crossing the first direction, a series circuit configured to connect to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, an energy supplying circuit configured to connect to the first wiring to supply energy to the first wiring, the energy being used to store the data in the resistance change type storage element, and a capacitance circuit configured to include a capacitive element and being connected to the second wiring. | 09-23-2010 |
20100238701 | SEMICONDUCTOR MEMORY DEVICE - A memory cell arranged between first and second wirings includes a variable-resistor element. A controller controls a voltage applied between the first and second wirings. The controller performs a first operation that applies a first voltage between the first and second wirings to switch the variable-resistor element from a first state with a resistance value not less than a first resistance value, to a second state with a resistance value not more than a second resistance value smaller than the first resistance value. The second operation applies a second voltage smaller than the first voltage between the first and second wirings to switch the variable-resistor element from the second state to the first state. In the first operation, a verify voltage is applied between the first and second wirings. Based on the obtained signal, a third voltage smaller than the first voltage is applied between the first and second wirings. | 09-23-2010 |
20100316831 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a resistive layer directly or indirectly added to a recording layer and having electric resistivity larger than electric resistivity in the low-resistance state of the recording layer. A first compound contained in the recording layer comprises a composite compound includes two or more kinds of cationic elements, at least one of the two or more kinds of cationic elements is a transition element having a d orbit filled incompletely with electrons, a shortest distance between cationic elements adjacent to each other is 0.32 nm or less. | 12-16-2010 |
20110026299 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA WRITE/DATA ERASE THEREIN - A nonvolatile semiconductor memory device comprises: a plurality of first lines; a plurality of second lines; a plurality of memory cells each disposed at each of crossing-points of the first lines and the second lines and each comprising a variable resistor and a bi-directional diode; and a voltage control circuit configured to control a voltage of selected one of the first lines, unselected ones of the first lines, selected one of the second lines, and unselected ones of the second lines, respectively. The variable resistor is configured to change its resistance value depending on a polarity of a voltage applied thereto. The voltage control circuit is configured to apply a voltage pulse to the selected one of the first lines and to connect a capacitor of a certain capacitance to one end of the selected one of the second lines. | 02-03-2011 |
20110062405 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements. | 03-17-2011 |
20110062407 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region. | 03-17-2011 |
20120061732 | INFORMATION RECORDING/REPRODUCING DEVICE - According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more. | 03-15-2012 |