Patent application number | Description | Published |
20090053426 | COBALT DEPOSITION ON BARRIER SURFACES - Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process. | 02-26-2009 |
20090084317 | ATOMIC LAYER DEPOSITION CHAMBER AND COMPONENTS - An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber. | 04-02-2009 |
20100062149 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 03-11-2010 |
20140248772 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 09-04-2014 |
20150376784 | ATOMIC LAYER DEPOSITION CHAMBER WITH COUNTER-FLOW MULTI INJECT - A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly. | 12-31-2015 |
Patent application number | Description | Published |
20100062614 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS - Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT). | 03-11-2010 |
20110263115 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 10-27-2011 |
20120122320 | Method Of Processing Low K Dielectric Films - Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described. | 05-17-2012 |
20130098477 | Apparatus and Method for Providing Uniform Flow of Gas - Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels. | 04-25-2013 |
20130140698 | Doped Tantalum Nitride for Copper Barrier Applications - Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer. | 06-06-2013 |
20130196507 | Method Of Depositing Metals Using High Frequency Plasma - Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma. | 08-01-2013 |
20130243956 | Selective Atomic Layer Depositions - Provided are methods of selectively depositing an atomic layer deposition film on a substrate having two different surfaces. Also provided are methods of depositing TaN selectively onto a dielectric material versus a metal surface. | 09-19-2013 |
20130273733 | Methods for Depositing Manganese and Manganese Nitrides - Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film. | 10-17-2013 |
20130292806 | Methods For Manganese Nitride Integration - Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer. | 11-07-2013 |
20140120712 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 05-01-2014 |
20140220772 | Doping Control of Metal Nitride Films - Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping. | 08-07-2014 |
20140231930 | Atomic Layer Deposition of Hafnium or Zirconium Alloy Films - Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH | 08-21-2014 |
20150132951 | Surface Poisoning Using ALD For High Selectivity Deposition Of High Aspect Ratio Features - Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness. | 05-14-2015 |
20150194384 | Cobalt Manganese Vapor Phase Deposition - Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer. | 07-09-2015 |
20150255333 | COBALT DEPOSITION ON BARRIER SURFACES - Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process. | 09-10-2015 |
20150348902 | PROTECTIVE VIA CAP FOR IMPROVED INTERCONNECT PERFORMANCE - Exemplary methods of forming a semiconductor structure may include etching a via through a semiconductor structure to expose a first circuit layer interconnect metal. The methods may include forming a layer of a material overlying the exposed first circuit layer interconnect metal. The methods may also include forming a barrier layer within the via having minimal coverage along the bottom of the via. The methods may additionally include forming a second circuit layer interconnect metal overlying the layer of material. | 12-03-2015 |
20160032455 | HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION - Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate. | 02-04-2016 |
20160052772 | METHODS AND APPARATUS FOR LIQUID CHEMICAL DELIVERY - Methods and apparatus for delivering precursor materials derived from liquid chemicals to a process chamber are provided herein. In some embodiments, a liquid chemical delivery apparatus includes: a body having an inner volume to hold a liquid chemical, an inlet to receive a carrier gas into the inner volume, and an outlet to flow the carrier gas from the inner volume, wherein a bottom of the inner volume includes a reduced volume portion; and a level sensor configured to detect a level of the liquid chemical in the reduced volume portion. | 02-25-2016 |
20160064275 | Selective Deposition With Alcohol Selective Reduction And Protection - Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon. | 03-03-2016 |
Patent application number | Description | Published |
20100192225 | EFFICIENT APPLICATION IDENTIFICATION WITH NETWORK DEVICES - In general, techniques are described for efficiently implementing application identification within network devices. In particular, a network device includes a control unit that stores data defining a group Deterministic Finite Automata (DFA) and an individual DFA. The group DFA is formed by merging non-explosive DFAs generated from corresponding non-explosive regular expressions (regexs) and fingerprint DFAs (f-DFAs) generated from signature fingerprints extracted from explosive regexs. The non-explosive regexs comprise regexs determined not to cause state explosion during generation of the group DFA, the signature fingerprints comprise segments of explosive regexs that uniquely identifies the explosive regexs, and the explosive regexs comprise regexs determined to cause state explosion during generation of the group DFA. The network device includes an interface that receives a packet and the control unit traverses first the group DFA and then, in some instances, the individual DFAs to more efficiently identify network applications to which packets correspond. | 07-29-2010 |
20100229238 | HYBRID REPRESENTATION FOR DETERMINISTIC FINITE AUTOMATA - A method includes receiving a data unit, determining whether a current state, associated with a deterministic finite automata (DFA) that includes a portion of states in a bitmap and a remaining portion of states in a DFA table, is a bitmap state or not, and determining whether a value corresponding to the data unit is greater than a threshold value, when it is determined that the current state is not a bitmap state. The method further includes determining whether the current state is insensitive, when it is determined that the value corresponding to the data unit is greater than the threshold value, where insensitive means that each next state is a same state for the current state, and selecting a default state, as a next state for the current, when it is determined that the current state is insensitive. | 09-09-2010 |
20110122887 | COORDINATED QUEUING BETWEEN UPSTREAM AND DOWNSTREAM QUEUES IN A NETWORK DEVICE - A system determines a scheduling value based on a current length of a downstream queue in a network device. The system sends the scheduling value from the downstream queue to an upstream queue and schedules dequeuing of one or more data units, destined for the downstream queue, from the upstream queue based on the scheduling value. | 05-26-2011 |
20120155271 | SCALABLE RESOURCE MANAGEMENT IN DISTRIBUTED ENVIRONMENT - A method may include receiving a packet in a network device, selecting one of a group of ingress buffers, where each ingress buffer is associated with a different one of a group of processors, distributing the packet to the selected ingress buffer; and scheduling the packet, based on a congestion state of a queue in an egress buffer associated with the packet, to be processed by the processor associated with the selected ingress buffer to provide a network service | 06-21-2012 |
Patent application number | Description | Published |
20120285123 | Methods of Stabilizing Molecular Weight of Polymer Stents After Sterilization - Methods of stabilizing the molecular weight of polymer stents scaffolds after E-beam sterilization are disclosed. The molecular weight of the polymer of the irradiated scaffolds is stabilized through exposure to gas containing oxygen. | 11-15-2012 |
20120290063 | Method of Increasing Stent Retention of Bioabsorbable Scaffolding with a Sheath - A medical device includes a polymer stent crimped to a catheter having an expansion balloon. The stent is crimped to the balloon by a process that includes heating the stent to a temperature below the polymer's glass transition temperature to improve stent retention without adversely affecting the mechanical characteristics of the stent when later deployed to support a body lumen. A variable diameter sheath with a central portion that prevents expansion of the stent when the balloon is pressurized and larger diameter ends is disposed over the crimped stent-balloon assembly. The balloon is pressurized and the larger diameter ends of the sheath allow the balloon beyond the ends of the stent to expand. The balloon is then depressurized. | 11-15-2012 |
20120290070 | Control Of Degradation Profile Of Bioabsorbable Poly(L-Lactide) Scaffold - Methods of controlling the degradation profile of a biodegradable stent scaffolding are disclosed. Disclosed methods include controlling features of the degradation profile including the time to loss of radial strength and the degradation time of the stent. | 11-15-2012 |
20150057744 | POLY(L-LACTIDE) STENT WITH TUNABLE DEGRADATION RATE - Methods of making a biodegradable polymeric stent made from poly(L-lactide) and a low concentration of L-lactide monomer is disclosed. The concentration of L-lactide is adjusted to provide a degradation behavior that is suitable for different treatment applications including coronary, peripheral, and nasal. Methods include making a poly(L-lactide) material for a stent with uniformly distributed L-lactide monomer through control of polymerization conditions during PLLA synthesis, control of post-processing conditions, or both. | 02-26-2015 |
20150128527 | METHODS OF STABILIZING MOLECULAR WEIGHT OF POLYMER STENTS AFTER STERILIZATION - Methods of stabilizing the molecular weight of polymer stents scaffolds after E-beam sterilization are disclosed. The molecular weight of the polymer of the irradiated scaffolds is stabilized through exposure to gas containing oxygen. | 05-14-2015 |
20150137428 | METHODS OF STABILIZING MOLECULAR WEIGHT OF POLYMER STENTS AFTER STERILIZATION - Methods of stabilizing the molecular weight of polymer stents scaffolds after E-beam sterilization are disclosed. The molecular weight of the polymer of the irradiated scaffolds is stabilized through exposure to gas containing oxygen. | 05-21-2015 |
20150217028 | MODIFIED PLA POLYMER AND METHOD OF MAKING AND USING - It is provided herein modified polylactide (PLA) polymers comprising biocompatibile functional group(s) on the polymers and methods of making and using the modified PLA polymers. | 08-06-2015 |
20150359648 | HIGH MOLECULAR WEIGHT POLYLACTIDE AND POLYCAPROLACTONE COPOLYMER AND BLENDS FOR BIORESORBABLE VASCULAR SCAFFOLDS - Bioresorbable polymer vascular scaffolds made of combinations of polylactide and polycaprolactone having a high molecular weight polymer, thin struts in a selected range and sufficient radial strength to support a vessel upon deployment. The scaffolds have degradation behavior of molecular weight, radial strength, and mass that are conducive to healing of a vessel including providing patency to a vessel, reduction of radial strength, breaking up, and resorbing to allow return of the vessel to a natural state. | 12-17-2015 |
20160081827 | THERMAL PROCESSING OF POLYMER SCAFFOLDS - Methods are disclosed including thermally processing a scaffold to increase the radial strength of the scaffold when the scaffold is deployed from a crimped state to a deployed state such as a nominal deployment diameter. The thermal processing may further maintain or increase the expansion capability of the scaffold when expanded beyond the nominal diameter. | 03-24-2016 |
20160101222 | METHOD OF TREATING WITH POLY(L-LACTIDE) STENT WITH TUNABLE DEGRADATION RATE - Methods of treating with a biodegradable polymeric stent made from poly(L-lactide) and a low concentration of L-lactide monomer is disclosed. The concentration of L-lactide is adjusted to provide a degradation behavior that is suitable for different treatment applications including coronary, peripheral, and nasal. | 04-14-2016 |
Patent application number | Description | Published |
20090193369 | PROCESS FOR DESIGN OF SEMICONDUCTOR CIRCUITS - The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield. | 07-30-2009 |
20110079779 | SHAPE CHARACTERIZATION WITH ELLIPTIC FOURIER DESCRIPTOR FOR CONTACT OR ANY CLOSED STRUCTURES ON THE CHIP - Shapes and orientations of contacts or other closed contours on an integrated circuit are characterized by calculating Elliptic Fourier descriptors. The descriptors are then used for generating design rules for the integrated circuit and for assessing process capability for the manufacturing of the integrated circuit. Monte Carlo simulation can be performed in conjunction with the elliptic Fourier descriptors. | 04-07-2011 |
20130146982 | SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS - A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer. | 06-13-2013 |
20130181289 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor. | 07-18-2013 |
20130292772 | LAYOUT DESIGNS WITH VIA ROUTING STRUCTURES - An approach for providing layout designs with via routing structures is disclosed. Embodiments include: providing a gate structure and a diffusion contact on a substrate; providing a gate contact on the gate structure; providing a metal routing structure that does not overlie a portion of the gate contact, the diffusion contact, or a combination thereof; and providing a via routing structure over the portion and under a part of the metal routing structure to couple the gate contact, the diffusion contact, or a combination thereof to the metal routing structure. | 11-07-2013 |
20130292773 | CROSS-COUPLING-BASED DESIGN USING DIFFUSION CONTACT STRUCTURES - An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region. | 11-07-2013 |
20140042641 | MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES - An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions. | 02-13-2014 |
20140131816 | CROSS-COUPLING-BASED DESIGN USING DIFFUSION CONTACT STRUCTURES - An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region. | 05-15-2014 |
20150187702 | MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES - An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions. | 07-02-2015 |