Patent application number | Description | Published |
20090269267 | Continuous method and apparatus for functionalizing carbon nanotube - The present invention relates to a continuous method and apparatus for functionalizing a carbon nanotube, and more specifically, to a continuous method and apparatus for functionalizing a carbon nanotube including preparing a functionalized product by functionalizing a carbon nanotube solution including nitro compound according to the following Chemical Formula 1 and carbon nanotube mixture including an oxidizer for forming nitric acid under subcritical water or supercritical water condition of 50 to 400 atm and a continuous method and apparatus for functionalizing a carbon nanotube under subcritical water or supercritical water condition using nitro compound without using strong acids or strong bases. | 10-29-2009 |
20090297424 | Continuous method and apparatus of functionalizing carbon nanotube - The present invention relates to a continuous method for functionalizing a carbon nanotube, and more specifically, to a continuous method for functionalizing a carbon nanotube by feeding functional compounds having one or more functional group into a functionalizing reactor into which a carbon nanotube mixture including oxidizer is fed under a pressure of 50 to 400 atm and a temperature of 100 to 600° C. to a subcritical water or supercritical water condition of a pressure of 50 to 40 atm by using a continuously functionalizing apparatus to obtain the functionalized products, such that the functional group of the functional compound can be easily introduced to the carbon nanotube, thereby increasing the functionalized effect of the carbon nanotube and increasing the dispersibility accordingly. | 12-03-2009 |
20100065776 | Continuous methods and apparatus of functionalizing carbon nanotube - The present invention relates to a continuous method and apparatus of functionalizing a carbon nanotube, and more specifically, to a continuous method of functionalizing a carbon nanotube under subcritical water or supercritical water conditions without additional functionalizing processes, comprising: a) continuously feeding the carbon nanotube solution and an oxidizer under a pressure of 50 to 400 atm, respectively or together, and then preheating the mixture of said carbon nanotube solution and said oxidizer; b) functionalizing the carbon nanotube in the preheated said mixture under the subcritical water or the supercritical water condition of to 400 atm; c) cooling down the functionalized product into 0 to 100° C. and depressurizing the functionalized product into 1 to 10 atm; and d) recovering the cooled down and depressurized product. | 03-18-2010 |
20100080748 | CONTINUOUS METHOD AND APPARATUS OF PURIFYING CARBON NANOTUBES - Provided is a continuous method and apparatus of purifying carbon nanotubes. The continuous method and apparatus of purifying carbon nanotubes is characterized in a first purifying step for injecting a carbon nanotube liquid mixture containing an oxidizer into a purifying reactor under a sub-critical water or supercritical water condition at a pressure of 50 to 400 atm and a temperature of 100 to 600° C. to obtain a purified product, thereby removing amorphous carbon and producing the carbon nanotube product. | 04-01-2010 |
20120082594 | APPARATUS FOR PURIFYING CARBON NANOTUBES - Provided is a continuous method and apparatus of purifying carbon nanotubes. The continuous method and apparatus of purifying carbon nanotubes is characterized in a first purifying step for injecting a carbon nanotube liquid mixture containing an oxidizer into a purifying reactor under a sub-critical water or supercritical water condition at a pressure of 50 to 400 atm and a temperature of 100 to 600° C. to obtain a purified product, thereby removing amorphous carbon and producing the carbon nanotube product. | 04-05-2012 |
20120093710 | PURIFIED CARBON NANOTUBES - Provided is a continuous method and apparatus of purifying carbon nanotubes. The continuous method and apparatus of purifying carbon nanotubes is characterized in a first purifying step for injecting a carbon nanotube liquid mixture containing an oxidizer into a purifying reactor under a sub-critical water or supercritical water condition at a pressure of 50 to 400 atm and a temperature of 100 to 600° C. to obtain a purified product, thereby removing amorphous carbon and producing the carbon nanotube product. | 04-19-2012 |
20120112134 | Blending Improvement Carbon-Composite having Carbon-Nanotube and its Continuous Manufacturing Method and Apparatus - Provided area carbon nanotube composite material obtained by treating a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium under a sub-critical or super-critical condition of 50-400 atm, and a method for producing the same. More particularly, the method for producing a carbon nanotube composite material, includes: introducing a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium into a preheating unit under a pressure of 1-400 atm to preheat the mixture; treating the preheated mixture under a sub-critical or super-critical condition of 50-400 atm; cooling and depressurizing the resultant product to 0-1000 C and 1-10 atm; and recovering the cooled and depressurized product. Provided also is an apparatus for producing a carbon nanotube composite material in a continuous manner. | 05-10-2012 |
20130200300 | High-Efficiency Heat-Dissipating Paint Composition Using a Carbon Material - Provided is a heat-dissipating paint composition using a carbon material, the heat-dissipating paint composition including a dispersion solution containing a surface treated carbon material, a heat resistance additive, and an adhesion improving emulsion, so that the heat-dissipating paint composition can have excellent heat dissipation performance and can be applied to various industrial field requiring temperature control. | 08-08-2013 |
20130207294 | Conductive Paint Composition and Method for Manufacturing Conductive Film Using the Same - Provided are a conductive paint composition and a method for manufacturing a conductive film using the same. The conductive paint composition of the present invention includes: a dispersant made of a block copolymer consisting of a hydrophilic polymer unit and a hydrophobic polymer unit; a conductive material made of a surface-modified carbon compound; a polymer binder: and a medium containing water, an organic solvent, or a mixture thereof. The conductive paint composition is coated and cured on the substrate to form the conductive film, thereby controlling a surface structure of the substrate, and thus, imparting uniform antistatic function, electrostatic dissipation (ESD), conductivity, electromagnetic interference shield function to the substrate. | 08-15-2013 |
Patent application number | Description | Published |
20130099304 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 04-25-2013 |
20130161818 | 3-D NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit. | 06-27-2013 |
20150072491 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 03-12-2015 |
20150097229 | 3-D NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit. | 04-09-2015 |
Patent application number | Description | Published |
20110094256 | Refrigerator having sub door and manufacturing method of sub door - A refrigerator having a sub door which reduces energy loss and a method of manufacturing method the sub door. The refrigerator includes a main body provided with storage chambers formed therein, doors opening and closing the storage chambers, and provided with an opening, a sub door to open and close the opening, and a cooling unit provided on the rear surface of the sub door. When the sub door is opened, cool air of the cooling unit is transmitted to a stored article put on the rear surface of the sub door, and when the sub door is closed, relatively uniform temperature distribution in the storage chamber is achieved and thus storage performance of the refrigerator is improved. | 04-28-2011 |
20140070688 | REFRIGERATOR HAVING SUB DOOR - A refrigerator includes a main body provided with storage chambers having doors, one of the doors being provided with an opening, the opening having at least one stepped plane; a rack installed in the storage chamber at a height corresponding to that of the lower end of the opening; a sub door to open and close the opening; and a connection member to prevent a height difference between a rear surface of the sub door and the opening. The connection member is configured to slide relative to the sub door to cover the at least one stepped plane, whereby the connection member closes the at least one stepped plane when the sub door is closed, and opens the at least one stepped plane when the sub door is opened so that the rear surface of the sub door and the connection member form substantially a level plane with the rack. | 03-13-2014 |
20140246970 | REFRIGERATOR - Disclosed is a refrigerator including a main body provided with a storage chamber; a door to respectively open and close the storage chamber; a control unit installed the door to select an operation; a reception part provided in the door to receive the control unit; and an installation hole provided on a side end of the door to cause the control unit to be inserted into the reception part. The control unit is installed through the side end of the door, which is deviated from a user's line of sight. | 09-04-2014 |
Patent application number | Description | Published |
20140054671 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode. | 02-27-2014 |
20140054672 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode. | 02-27-2014 |
20150236039 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode. | 08-20-2015 |
20150249095 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode. | 09-03-2015 |