Patent application number | Description | Published |
20100012971 | GAN LED ELEMENT AND LIGHT EMITTING DEVICE - A first conductive film | 01-21-2010 |
20110012154 | LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film. | 01-20-2011 |
20110198560 | SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT - A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space. | 08-18-2011 |
20110260196 | LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film. | 10-27-2011 |
Patent application number | Description | Published |
20120112626 | WHITE LIGHT-EMITTING SEMICONDUCTOR DEVICES - A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux. | 05-10-2012 |
20140042896 | WHITE LIGHT-EMITTING SEMICONDUCTOR DEVICES - A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux. | 02-13-2014 |
Patent application number | Description | Published |
20080203450 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved. | 08-28-2008 |
20100230728 | MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE - A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously. | 09-16-2010 |
20110027934 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved. | 02-03-2011 |
Patent application number | Description | Published |
20100332062 | CONTROL APPARATUS FOR HYBRID VEHICLE - A control apparatus for a hybrid vehicle includes an internal combustion engine and a generator motor, a capacitor, and a driving force assisting unit. Further, the control device includes a switching unit that selects an appropriate traveling range from a plurality of traveling ranges including at least a normal traveling range and a charging priority range for preferentially charging the capacitor and switches the range, and a threshold value increasing unit that increases, when the charging priority range is selected by the switching unit, the predetermined determination threshold value as compared to when the normal traveling range is selected by the switching unit. | 12-30-2010 |
20120245777 | CONTROL APPARATUS FOR HYBRID VEHICLE - A control apparatus for a hybrid vehicle includes an internal combustion engine and a generator motor, a capacitor, and a driving force assisting unit. Further, the control device includes a switching unit that selects an appropriate traveling range from a plurality of traveling ranges including at least a normal traveling range and a charging priority range for preferentially charging the capacitor and switches the range, and a threshold value increasing unit that increases, when the charging priority range is selected by the switching unit, the predetermined determination threshold value as compared to when the normal traveling range is selected by the switching unit. | 09-27-2012 |
20120245778 | CONTROL APPARATUS FOR HYBRID VEHICLE - A control apparatus for a hybrid vehicle includes an internal combustion engine and a generator motor, a capacitor, and a driving force assisting unit. Further, the control device includes a switching unit that selects an appropriate traveling range from a plurality of traveling ranges including at least a normal traveling range and a charging priority range for preferentially charging the capacitor and switches the range, and a threshold value increasing unit that increases, when the charging priority range is selected by the switching unit, the predetermined determination threshold value as compared to when the normal traveling range is selected by the switching unit. | 09-27-2012 |
20120245779 | CONTROL APPARATUS FOR HYBRID VEHICLE - A control apparatus for a hybrid vehicle includes an internal combustion engine and a generator motor, a capacitor, and a driving force assisting unit. Further, the control device includes a switching unit that selects an appropriate traveling range from a plurality of traveling ranges including at least a normal traveling range and a charging priority range for preferentially charging the capacitor and switches the range, and a threshold value increasing unit that increases, when the charging priority range is selected by the switching unit, the predetermined determination threshold value as compared to when the normal traveling range is selected by the switching unit. | 09-27-2012 |