Patent application number | Description | Published |
20100090246 | VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer. | 04-15-2010 |
20100096652 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device. | 04-22-2010 |
20100109035 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same. | 05-06-2010 |
20110133231 | EXTENSIVE AREA LED HAVING ROUGNESS SURFACE - The structure for fixing packing of a lid ( | 06-09-2011 |
20110215290 | ANTI-REFLECTED HIGH EFFICIENCY LIGHT EMITTING DIODE DEVICE - The present invention is related to a light emitting diode device in which a fine prominence and depression is formed on a semiconductor layer to make an anti-reflection region. The light emitting diode device comprises, a substrate; a N-type semi-conductor layer; an active layer for generating light; P-type semiconductor layer; a first exposed region formed by etching the active layer and the P-type semiconductor layer to partly expose the N-type semiconductor layer; a first ohmic contact formed on the first exposed layer; a second ohmic contact formed on the P-type semiconductor layer, and having an opening to partly form a second exposed region on the P-type semiconductor layer, said second exposed layer being formed to partly have a ultra-fine prominence and depression. | 09-08-2011 |
20120211795 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING SUBSTRATE HAVING PROTECTION LAYERS AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same. | 08-23-2012 |
20130256712 | SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells. | 10-03-2013 |