Patent application number | Description | Published |
20080220490 | Method for Improving Organisms Using Flux Scanning Based on Enforced Objective Flux - The present invention relates to a method for improving useful substance-producing organisms using metabolic flux analysis, and more particularly to a method for improving a host organism producing a useful substance, the method comprising: calculating a maximum flux value corresponding to the theoretical maximum yield of the useful substance in the metabolic network model of the host organism for producing useful substance, and calculating the optimum value of metabolic flux associated with useful substance production in the metabolic network when the value of cell growth-associated metabolic flux is the maximum under the condition where fermentation data are applied or not applied; selecting metabolic fluxes whose absolute values increase from the range between the maximum value and the optimum value; screening genes associated with the selected metabolic fluxes; and introducing and/or amplifying the selected genes in the host organism. According to the invention, the production of the useful substance can be effectively improved by selecting metabolic fluxes to be amplified and genes involved in the metabolic fluxes from the range between the optimum value and maximum value of production-associated metabolic flux in the host organism for producing the useful substance, whose genome-level metabolic network model is constructed, and introducing and/or amplifying the selected genes in the organism. | 09-11-2008 |
20090298070 | METHOD FOR ANALYZING METABOLITES FLUX USING CONVERGING RATIO DETERMINANT AND SPLIT RATIO DETERMINANT - The present invention relates to a method for analyzing metabolic flux using CRD and SRD. Specifically, the method comprising: selecting a specific target organism, constructing the metabolic network model of the selected organism, identifying the correlations between specific metabolic fluxes in the metabolic network model, defining the correlation ratios as CRD and SRD, determining the correlation ratios of the metabolic fluxes through the experiment for measuring metabolic flux ratios, modifying a stoichiometric matrix with the determined CRD, SRD and correlation ratios, and applying the modified stoichiometric matrix of the metabolic network model for linear programming. According to the inventice method, the correlation between influent/effluent metabolic fluxes with respect to specific metabolites in target organisms (including | 12-03-2009 |
Patent application number | Description | Published |
20120155708 | APPARATUS AND METHOD FOR MEASURING TARGET POINT IN VIDEO - Disclosed are an apparatus and method for measuring a target point in a video. In the apparatus and method for measuring a target point in a video, a target point is recognized in a video including the target point set as a measuring target, information regarding the target point is extracted by using location information of the recognized target point and map information of the surroundings of the recognized target point, and the extracted target point is displayed in the video while providing detailed map information regarding the target point. Accordingly, a user can be quickly provided with detailed information regarding the location of the target point or an object present in a visual range and geo-spatial information of the surroundings. | 06-21-2012 |
20130089028 | WIRELESS COMMUNICATION SYSTEM AND METHOD USING DIRECTIONAL COMMUNICATION - A wireless communication system and a wireless communication method using directional communication are provided. The wireless communication method includes a communication request device transmitting a communication request message to a communication target device using directional communication, the communication request device receiving a response message that includes wireless communication connection information of the communication target device generated in response to the communication request message from the communication target device, the communication request device determining a wireless communication technology based on the wireless communication connection information, and the communication request device performing wireless connection with the communication target device according to the determined wireless communication technology. | 04-11-2013 |
20130325407 | APPARATUS AND METHOD FOR SHARING SENSING INFORMATION OF PORTABLE DEVICE - Disclosed herein is an apparatus and method for sharing sensing information of a portable device. The apparatus includes a sensor control unit for collecting sensing information sensed by sensors. A communication control unit collects sensing information from peripheral devices. An information management unit stores the collected sensing information. An information collection unit determines a sensing information collection range based on a sensing information request from an application and a sensing information collection policy, receives the sensing information from at least one of the sensor control unit, the communication control unit, and the information management unit based on the determined sensing information collection range, converts the received sensing information into a format requested by the application based on the sensing information request, and transmits the converted information to the application. | 12-05-2013 |
20140210650 | APPARATUS AND METHOD FOR INFORMING BUS DRIVER OF INTENTION TO GET ON OR OFF BUS - Disclosed herein are an apparatus and method for informing a bus driver of a user's intention to get on or off a bus. The apparatus for informing a bus driver of a user's intention to get on or off a bus includes a getting-on information collection device. The getting-on information collection device includes a getting-on information reception unit, an arrival-expected bus identification unit, and a transmission information transmission unit. The getting-on information reception unit receives getting-on information entered by a passenger who desires to get on a bus at a bus stop via a getting-on information transfer device of the bus stop. The arrival-expected bus identification unit identifies a bus expected to arrive having the earliest expected arrival time at the bus stop based on a bus number. The transmission information transmission unit transmits the transmission information to the getting-on information notification device of the bus expected to arrive. | 07-31-2014 |
20140241331 | WI-FI DIRECT-BASED MESSAGE COMMUNICATION METHOD AND APPARATUS - Disclosed is a message communication method of transmitting and receiving a certain message, independently of any network, without privacy invasion issues. The method includes generating vendor specific data on the basis of input information, adding the generated vendor specific data to a P2P information element of a probe request frame, and transmitting the probe request frame to another message communication apparatus. Thus, an apparatus conforming to a Wi-Fi Direct standard may transmit/receive a certain message to/from another terminal independently of a use region, a use environment, and a network of a large telecommunication vendor, without privacy invasion issues. | 08-28-2014 |
20150208325 | APPARATUS FOR PROVIDING INFORMATION ABOUT AVAILABLE SERVICE USING PROXY SERVER AND METHOD THEREFOR - An apparatus for providing information about an available service using a proxy server and a method thereof. The apparatus includes an available service checker, a database, an available service searcher, and an available service broadcaster. The apparatus may provide information through the proxy server regarding available services of a device that is not currently connected to a basic service set (BSS), thereby preventing generation of excessive amount of traffic. | 07-23-2015 |
20150312945 | APPARATUS AND METHOD FOR MANAGING INSTANT CONNECTION BASED ON WIRELESS LOCAL AREA NETWORK - An apparatus and a method for managing instant connection based on a wireless local area network are provided. The method includes: creating, by an accessed terminal, connection information required for setting connection therewith; creating, by the accessed terminal, a management frame by using the connection information; transmitting, by the accessed terminal, the created management frame to a peripheral terminal; receiving, by the peripheral terminal, the management frame and extracting connection information from the received management frame; and setting, by the peripheral terminal, connection with the accessed terminal by accessing the accessed terminal by using the extracted connection information to rapidly access a desired terminal without performing a device discovery process. | 10-29-2015 |
20150332094 | SMART GLASSES WITH REAR CAMERA - The present invention relates to smart glasses, and the smart glasses include: a frame mounted with lens; a pair of temples extended in one direction from both side ends of the frame so as to face each other; a rear camera mounted at an end of the temple and configured to photograph a rear image of a wearer; a display unit installed at one side of the lens and configured to display the rear image photographed by the rear camera; and a control device configured to control an operation of each of the constituent elements, thereby enabling a user to check a situation in the rear view without turning his/her head. | 11-19-2015 |
Patent application number | Description | Published |
20100066650 | Liquid crystal display device including touch panel - A liquid crystal display device in which a touch panel is embedded in a liquid crystal panel, which reduces the number of processes and eases assembly. The liquid crystal display device includes first and second substrates opposite each other, a thin film transistor array formed on the first substrate, a touch sensing part formed on the second substrate including a plurality of transparent X electrodes, a plurality of transparent Y electrodes orthogonally intersecting each other and a first transparent insulating film between the X electrodes and the Y electrodes, a color filter array formed on the touch sensing part, and a liquid crystal layer formed between the thin film transistor array and the color filter array. | 03-18-2010 |
20100066702 | Liquid crystal display device and method of manufacturing thereof - A liquid crystal display device includes: a liquid crystal panel including first and second substrates facing each other and a liquid crystal layer between the first and second substrates, each of the first and second substrates defining a central display region and a peripheral non-display region; a cover glass integrated touch sensor on the liquid crystal panel, the touch sensor including a plurality of transparent first electrodes and second electrodes formed on a surface of the cover glass facing the liquid crystal panel, wherein the first electrodes and second electrodes cross each other; and a touch signal applicator at a side of the cover glass away from the display region of the liquid crystal panel. | 03-18-2010 |
20120105350 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THEREOF - A liquid crystal display device includes: a liquid crystal panel including first and second substrates facing each other and a liquid crystal layer between the first and second substrates, each of the first and second substrates defining a central display region and a peripheral non-display regions; a cover glass integrated touch sensor on the liquid crystal panel, the touch sensor including a plurality of transparent first electrodes and second electrodes formed on a surface of the cover glass facing the liquid crystal panel, wherein the first electrodes and second electrodes cross each other; and a touch signal applicator at a side of the cover glass away from the display region of the liquid crystal panel. | 05-03-2012 |
Patent application number | Description | Published |
20110121399 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE HAVING METAL GATE STACK STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate. | 05-26-2011 |
20110180879 | CMOS TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND SEMICONDUCTOR MODULE INCLUDING THE DEVICE - Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module. | 07-28-2011 |
20110237062 | Semiconductor Device And Method Of Fabricating The Same - A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; fondling a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening. | 09-29-2011 |
20120122309 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING A WORK FUNCTION CONTROL FILM - A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench; forming a mask pattern on the work function control film formed in the second region; injecting a work function control material into the work function control film formed in the first region to control a work function of the work function control film formed in the first region; removing the mask pattern; and forming a first metal gate electrode to fill the first trench and forming a second metal gate electrode to fill the second trench. | 05-17-2012 |
20120292715 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping | 11-22-2012 |
20120329262 | METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING ETCH STOP DIELECTRIC LAYERS AND RELATED DEVICES - A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper. | 12-27-2012 |
20130043518 | Semiconductor Device And Method Of Fabricating The Same - A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening. | 02-21-2013 |
20130316525 | SEMICONDUCTOR DEVICE HAVING SELECTIVELY NITRIDED GATE INSULATING LAYER AND METHOD OF FABRICATING THE SAME - A semiconductor device including a selectively nitrided gate insulating layer may be fabricated by a method that includes forming a first gate insulating layer on a substrate having a first region and a second region, performing a nitridation process on the first gate insulating layer, removing the first gate insulating layer from at least a portion of the first region to expose at least a portion of the substrate, forming a second gate insulating layer on at least the exposed portion of the first region of the substrate, thermally treating the first and second gate insulating layers in an oxygen atmosphere, forming a high-k dielectric on the first and second gate insulating layers, and forming a metal gate electrode on the high-k dielectric. | 11-28-2013 |
20140246726 | METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING ETCH STOP DIELECTRIC LAYERS AND RELATED DEVICES - A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper. | 09-04-2014 |
20140302652 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping | 10-09-2014 |
20150035077 | MOS TRANSISTORS INCLUDING A RECESSED METAL PATTERN IN A TRENCH - Methods of manufacturing a MOS transistor are provided. The methods may include forming first and second trenches. The methods may further include forming first metal patterns within portions of the first and second trenches. The methods may additionally include removing the first metal patterns from the second trench while at least portions of the first metal patterns remain within the first trench. The methods may also include forming a second metal layer within the first and second trenches, the second metal layer formed on the first metal patterns within the first trench. | 02-05-2015 |
Patent application number | Description | Published |
20100072556 | Semiconductor device and associated methods - A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. | 03-25-2010 |
20100099245 | Methods of Forming Semiconductor Devices - Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. | 04-22-2010 |
20100099269 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product. | 04-22-2010 |
20100124805 | METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFERENT WORK FUNCTIONS USING NITRIDATION - A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer. A first gate and a second gate having different work functions are respectively formed in the first region and the second region by etching the gate electrode layer and the gate insulating layer | 05-20-2010 |
20100164009 | Method of manufacturing dual gate semiconductor device - The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities. | 07-01-2010 |
20100203716 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 08-12-2010 |
20110217833 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING AN ETCHANT - In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved. | 09-08-2011 |
20110223758 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 09-15-2011 |
20120009746 | METHODS OF FORMING A SEMICONDUCTOR DEVICE - A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. | 01-12-2012 |
20120012942 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product. | 01-19-2012 |
20120214296 | Methods of Forming Semiconductor Devices - Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. | 08-23-2012 |
20120280329 | SEMICONDUCTOR DEVICE - A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. | 11-08-2012 |
20150093888 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 04-02-2015 |
Patent application number | Description | Published |
20090310045 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - A liquid crystal display device includes first and second substrates facing and spaced apart from each other, each of the first and second substrates having a first sub-pixel region, a second sub-pixel region, a third sub-pixel region, a fourth sub-pixel region and a fifth sub-pixel region for adjusting a viewing angle, the first, second, third and fourth sub-pixel regions surrounding the fifth sub-pixel region; a liquid crystal layer between the first and second substrates; a plurality of first pixel electrodes in each of the first, second, third and fourth sub-pixel regions on the first substrate; a plurality of first common electrodes in each of the first, second, third and fourth sub-pixel regions on the first substrate, the plurality of first common electrodes alternating with the plurality of first pixel electrodes; a second pixel electrode in the fifth sub-pixel region on the first substrate; and a second common electrode in the fifth sub-pixel region on the second substrate, the second common electrode facing the second pixel electrode. | 12-17-2009 |
20100141569 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - A liquid crystal display device includes first and second substrates facing each other, a layer of liquid crystal molecules interposed between the first and second substrates, a plurality of color displaying sub-pixels including first, second and third sub-pixels defined on the first and second substrates, first common electrodes in the first, second and third sub-pixels on the first substrate, first pixel electrodes in the first, second and third sub-pixels on the first substrate and alternately arranged with the first common electrodes, color filter layers in the first, second and third sub-pixels on the second substrate, a plurality of viewing angle restricting sub-pixels including fourth, fifth and sixth sub-pixels defined on the first and second substrates, the fourth, fifth and sixth sub-pixels corresponding one-to-one with the first, second and third sub-pixels, second pixel electrodes in the fourth, fifth and sixth sub-pixels on the first substrate, and second common electrodes in the fourth, fifth and sixth sub-pixels on the second substrate. | 06-10-2010 |
20120094569 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided are an LCD device that can control a viewing angle freely and a manufacturing method thereof. The LCD device includes a first substrate, a second substrate, and an LC layer interposed between the first and second substrates. The LCD device further includes red, green, blue, and viewing angle controlling subpixels. These subpixels are driven in a VA mode. The red, green, and blue subpixels have a transflective structure. The viewing angle controlling subpixel has a transmissive or transflective structure. | 04-19-2012 |
Patent application number | Description | Published |
20140144291 | METHOD OF PRODUCING LOW OXYGEN-CONTENT MOLYBDENUM POWDER BY REDUCING MOLYBDENUM TRIOXIDE - Disclosed is a method of producing low oxygen-content molybdenum powders by reducing molybdenum trioxide, which includes charging a first reducing agent and the molybdenum trioxide, which are in the direct contact with each other on a micro-sieve on an upper portion of a bracket in a body, charging a second reducing agent in the bracket under the micro-sieve, coupling the body with a cover to close the body, and performing a reduction reaction by raising an internal temperature of the body by performing the first reduction reaction due to direct contact between the first reducing agent and the molybdenum trioxide, and performing the second reduction reaction due to evaporation of the second reducing agent. The first and second reduction reactions are performed at a temperature in a range of 550° C. to 650° C., and a temperature in a range of 1000° C. to 1200° C., respectively. | 05-29-2014 |
20140151944 | METHOD OF PRODUCING LOW OXYGEN-CONTENT MOLYBDENUM POWDER BY REDUCING MOLYBDENUM TRIOXIDE - Disclosed is an apparatus for producing low oxygen-content molybdenum powders by reducing MoO | 06-05-2014 |
20150147247 | METHOD OF PRE-TREATING MOLYBDENITE CONTAINING COPPER - Disclosed is a method of pre-treating molybdenite containing copper. The method includes mixing molybdenite containing copper with sulfuric acid, performing a sulfation reaction through a heating process after the mixing process is performed, performing a water leaching process by putting and stirring water after the sulfation reaction is performed, separating a cake from liquid after the water leaching process is performed, and drying the separated cake. | 05-28-2015 |
Patent application number | Description | Published |
20140332309 | STEERING SYSTEM FOR WHEELED CONSTRUCTION EQUIPMENT - Disclosed is a steering system which is capable of ensuring that a wheeled excavator travels straight while being driven on a paved road. The steering system for wheeled construction equipment includes: a hydraulic oil pump; a steering motor connected to the hydraulic oil pump; a steering valve controlling the operation of the steering motor; a steering handle operating the steering motor and the steering valve according to steering manipulation by the driver; and a steering cylinder steered by the manipulation of the steering handle. The steering system further includes an idle mode control unit which converts working mode into a steering mode not having straight line driving recovery performance when working mode, in which working and driving are enabled, is selected, and which converts exclusive driving mode into a steering mode having the straight line driving recovery performance through a signal input when the exclusive driving mode, in which only driving is enabled, is selected. | 11-13-2014 |
20150322974 | DRIVING CONTROL DEVICE OF CONSTRUCTION MACHINE - Disclosed is a driving control device for securing the operability at the beginning of driving by operating a driving operation device so as to prevent the quick start of equipment at the time of starting. A driving control device of a construction machine, according to the present invention, comprises: a hydraulic pump; a driving motor; a control valve provided to a path between the hydraulic pump and the driving motor and controlling the starting, stopping and direction conversion of the driving motor at the time of conversion; a driving speed selection valve provided to a path between a pilot pump and the driving motor and controlling the swivel angle of the swash plate of the driving motor at the time of conversion; a driving operation device provided to a path between the pilot pump and the control valve and outputting second signal pressure for converting the control valve at the time of operation; an operation amount detection means for detecting the operation amount of the driving operation means; and a control unit for outputting control signals to the driving speed selection valve such that the driving motor is converted to a low speed state if the operation amount of the driving operation device, which is detected by the operation amount detection means, is smaller than a preset set value, and the driving motor is converted to a high speed state if the operation amount of the driving operation device is larger than the preset set value. | 11-12-2015 |