Patent application number | Description | Published |
20100099267 | SYSTEM AND METHOD OF VAPOR DEPOSITION - Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material. | 04-22-2010 |
20100255427 | CONFORMAL PHOTO-SENSITIVE LAYER AND PROCESS - The present disclosure provides a method for etching a substrate. The method includes forming a patterned photo-sensitive layer on the substrate; applying an etching chemical fluid to the substrate, wherein the patterned photo-sensitive layer includes an adhesion promoter and/or hydrophobic additive; removing the etching chemical fluid; and removing the resist pattern. | 10-07-2010 |
20100273321 | WET SOLUBLE LITHOGRAPHY - A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon. | 10-28-2010 |
20100285410 | Method For Manufacturing A Semiconductor Device Using A Modified Photosensitive Layer - The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist. | 11-11-2010 |
20100310995 | DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY - A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern. | 12-09-2010 |
20110070542 | PHOTORESIST AND PATTERNING PROCESS - A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer | 03-24-2011 |
20110076624 | PHOTORESIST STRIPPING TECHNIQUE - A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent. | 03-31-2011 |
20110097670 | PATTERNING PROCESS AND CHEMICAL AMPLIFIED PHOTORESIST COMPOSITION - A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer. | 04-28-2011 |
20110159670 | Method and Apparatus of Patterning a Semiconductor Device - Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed. | 06-30-2011 |
20120003582 | PHOTORESIST AND PATTERNING PROCESS - A method and photoresist material for the patterning of integrated circuit (IC) components using ultra violet (UV) and extreme ultraviolet lithography (EUV) that includes providing a substrate, forming a first material layer over the substrate, forming a second material layer over the first material layer, the second material layer having a luminescent agent, and exposing one or more portions of the second material layer. | 01-05-2012 |
20120090547 | SYSTEM AND METHOD OF VAPOR DEPOSITION - Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s). | 04-19-2012 |
20120264057 | PATTERNING PROCESS AND PHOTORESIST WITH A PHOTODEGRADABLE BASE - A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer. | 10-18-2012 |
20130075364 | PATTERNING PROCESS AND MATERIALS FOR LITHOGRAPHY - Methods for forming a pattern in a lithography process for semiconductor wafer manufacturing are provided. In an example, a method includes forming a photoresist layer over a material layer; performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions; treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer; and developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer. | 03-28-2013 |
20130303421 | PHOTORESIST STRIPPING TECHNIQUE - Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: | 11-14-2013 |
20140134538 | Patterning Process and Chemical Amplified Photoresist Composition - A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer., and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about. 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer. | 05-15-2014 |