Patent application number | Description | Published |
20100007823 | BRIGHTNESS ENHANCEMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE - Provided are a brightness enhancement film and a liquid crystal display device which has a high ability for enhancing a luminance, has a more excellent ability for improving a luminance unevenness than conventional ones and may reduce an occurrence of a color unevenness. The brightness enhancement film wherein a circular polarization separation element, an optically anisotropic element wherein a retardation in an in-plane direction Re is about one fourth of a transmitting light and a retardation in a thickness direction Rth is less than 0 nm and a periodic structure member having a repeating structure on a surface thereof are integrated in this order, and the liquid crystal display device comprising the same. | 01-14-2010 |
20100134724 | Optical Element, Polarizing Plate, Retardation Plate, Illuminating Device and Liquid Crystal Display - A polymerizable liquid crystal compound, a polymerization initiator, and a chiral agent, and a surfactant, orientation adjuster or the like as necessary are dissolved in a solvent to obtain a embrocation, the embrocation is laminated on an isotropic transparent film in a film state and dried, and the dried film is polymerized to give an optical element in which a lower limit λ | 06-03-2010 |
20130114136 | PHASE DIFFERENCE FILM LAYERED BODY USED IN STEREOSCOPIC IMAGE DEVICE - A phase difference film stacked body having a lengthy shape, including a first phase difference film that has a uniform phase difference within a plane, and a second phase difference film that includes a plurality of regions that are patterned within a plane, the plurality of regions having different phase differences; as well as a polarizing plate complex having the same, a display device, and polarization glasses corresponding thereto. | 05-09-2013 |
Patent application number | Description | Published |
20150149603 | DISTRIBUTED PROCESSING SYSTEM - There is provided a distributed processing system including: a data store server for storing data; a data store part for storing data in the data store server; a data acquisition part for obtaining data from the data store server; and an operation manager part for performing configuration change on the whole system. The distributed processing system has a function of managing the configuration content and the configuration order for each device according to the change content, to determine the target and order to be configured based on the managed information by the operation manager part. Further, the distributed processing system has a function of performing a configuration change process on the data store part, the data acquisition part, and the data store server by the operation manager part. | 05-28-2015 |
20150201036 | GATEWAY DEVICE, FILE SERVER SYSTEM, AND FILE DISTRIBUTION METHOD - A system high in availability which includes plural file servers and local disks is realized. A distributed file system has plural file server clusters that perform any one of file storage, file read, and file deletion according to a request. A gateway device mediates requests between a client device that transmits a request including any one of file storage, file read, and file deletion, and the distributed file system. The gateway device includes a health check function unit that monitors an operating status of the file server cluster, and a data control function unit that receives the request for the distributed file system from the client device, and selects one or more of the file server clusters that are normally in operation, and distributes the request to the selected file server clusters. | 07-16-2015 |
Patent application number | Description | Published |
20090238746 | PHOSPHORUS RECOVERY METHOD AND PHOSPHORUS RECOVERY SYSTEM - A phosphorus recovery method and a phosphorus recovery system which can make equipment size small, and can be added easily also to an existing wastewater treatment facility, and can recover phosphorus by low cost, are provided. A phosphorus compound adsorption material includes a nitrogen containing compound which has an amino group at an end of molecular structure, a carrier supporting the nitrogen containing compound, and zinc ion or iron ion fixed to the nitrogen containing compound. After passing water to be treated containing phosphorus to an adsorption tower filled up with this phosphorus compound adsorption material to make phosphorus stick to the phosphorus compound adsorption material, a drug solution for desorption is supplied to the adsorption tower, and phosphorus is desorbed in liquid and is recovered. | 09-24-2009 |
20120035281 | PHOSPHORUS-ADSORBING MATERIAL AND PHOSPHORUS RECOVERY SYSTEM - A phosphorus-adsorbing material is produced to include a polymer-based material modified with at least either of a primary and a secondary amine and a metal supported on the polymer-based material, and a phosphorus recovery system is structured by using the phosphorus-adsorbing material. | 02-09-2012 |
20130187086 | PHOSPHORUS-ADSORBING MATERIAL AND PHOSPHORUS RECOVERY SYSTEM - A phosphorus-adsorbing material is produced to include a polymer-based material modified with at least either of a primary and a secondary amine and a metal supported on the polymer-based material, and a phosphorus recovery system is structured by using the phosphorus-adsorbing material. | 07-25-2013 |
Patent application number | Description | Published |
20090057143 | FILM-DEPOSITING TARGET AND PREPARATION OF PHASE SHIFT MASK BLANK - A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5. | 03-05-2009 |
20100143831 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided. | 06-10-2010 |
20100261099 | PHOTOMASK BLANK AND PHOTOMASK MAKING METHOD - A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20100261100 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20100261101 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |
20120064438 | PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM - A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×C | 03-15-2012 |
20130130159 | LIGHT PATTERN EXPOSURE METHOD, HALFTONE PHASE SHIFT MASK, AND HALFTONE PHASE SHIFT MASK BLANK - A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm | 05-23-2013 |
20130130160 | LIGHT PATTERN EXPOSURE METHOD, PHOTOMASK, AND PHOTOMASK BLANK - A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm | 05-23-2013 |
20140212795 | REFLECTIVE MASK BLANK AND REFLECTIVE MASK, AND METHODS FOR MANUFACTURING REFLECTIVE MASK BLANK AND REFLECTIVE MASK - A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting. | 07-31-2014 |
Patent application number | Description | Published |
20080211376 | Electron gun, electron beam exposure apparatus, and exposure method - An electron gun having an electron source emitting electrons includes: an acceleration electrode which accelerates the electrons; an extraction electrode which has a spherical concave surface having the center on an optical axis and facing the electron emission surface, and which extracts an electron from the electron emission surface; and a suppressor electrode which suppresses electron emission from a side surface of the electron source. In the electron gun, an electric field is applied to the electron emission surface while the electron source is kept at a low temperature in such an extent that sublimation of a material of the electron source would not be caused, to cause the electron source to emit a thermal field emission electron. | 09-04-2008 |
20080315089 | Electron gun, electron beam exposure apparatus, and exposure method - An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB | 12-25-2008 |
20100019648 | Electron gun and electron beam exposure apparatus - An electron gun includes: an electron source; an accelerating electrode; an extraction electrode for extracting electrons from an electron emission surface of the electron source; a suppressor electrode for suppressing emission of electrons from a side surface of the electron source; and an electron beam converging unit for converging an electron beam of thermal field emission electrons emitted from the electron emission surface by applying an electric field to the electron emission surface. The electron beam converging unit is an electrostatic lens electrode which is placed between the extraction electrode and the accelerating electrode and having an opening portion in its center. A voltage is applied to the electrostatic lens electrode to converge the electron beam. | 01-28-2010 |
20110148297 | Multi-column electron beam exposure apparatus and magnetic field generation device - A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, each of the two annular permanent magnets being magnetized in an optical axis direction and being symmetrical about the optical axis, the electromagnetic coils disposed near the annular permanent magnets and used to adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, the substrate having the electron beam converging unit disposed in a side portion of each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction with same polarities facing each other, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction. | 06-23-2011 |
20110245481 | METHOD FOR INHIBITING FUNCTION OF micro-RNA - A miRNA-inhibiting RNA complex has a double-stranded structure, in which at least one RNA strand that includes a miRNA-binding sequence is linked to the two strands at at least one end of the double-stranded structure. The complex can efficiently inhibit miRNAs. In particular, RNAs in which two RNAs containing a miRNA binding sequence are positioned between two double-stranded structures were able to strongly inhibit miRNA. These RNAs can be expressed from, for example, a PolIII promoter, and by integration into a vector, miRNAs can be stably inhibited for a long period of time. | 10-06-2011 |
Patent application number | Description | Published |
20090003026 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip. | 01-01-2009 |
20090003107 | SEMICONDUCTOR DEVICE - A semiconductor device includes a column decoder that generates a column selecting signal that selects any of a plurality of bit line pairs to which memory cells are connected according to a column address that is input; a bit line selecting switch that connects by the column selecting signal any of a plurality of bit line pairs and a data I/O line pair that outputs data that has been read from a memory cell to the outside; a data amplifier that amplifies a voltage differential of a data I/O line pair and outputs data that has been read to an output buffer; a data I/O line switch that is provided in the data I/O lines; an I/O line precharge circuit that precharges a data I/O line pair that is not on the side of the data amplifier; and an amplifier precharge circuit that precharges a data I/O line pair that is on the side of the data amplifier. | 01-01-2009 |
20110115543 | SEMICONDUCTOR DEVICE, METHOD FOR CONTROLLING THE SAME, AND DATA PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A semiconductor device includes a multiplexer and an output buffer. The multiplexer includes: n switches (n is an integer of 2 or greater) each including an input node receiving a different data signal and an output node coupled to an input node of the output buffer; and a plurality of switch control circuits each corresponding to a respective one of the n switches. Each of the plurality of switch control circuits turns on a corresponding one of the n switches based on a corresponding one of the signals each having a first cycle and a phase different by 1/n of the cycle from adjacent phases. When each of the plurality of switch control circuits detects that an input-side data signal of the corresponding one of the n switches appears at a corresponding output-side node, each of the plurality of switch control circuits turns off the corresponding switch. The multiplexer converts data, which is inputted in parallel to the n switches and which changes in the first cycle, into serial data that changes in 1/n of the first cycle and outputs the serial data via the output buffer. | 05-19-2011 |
20130015880 | SEMICONDUCTOR DEVICE AND METHOD OF ADJUSTING AN IMPEDANCE OF AN OUTPUT BUFFERAANM HARAGUCHI; YoshinoriAACI TokyoAACO JPAAGP HARAGUCHI; Yoshinori Tokyo JP - A semiconductor device has a ZQ circuit ( | 01-17-2013 |
20150092490 | SEMICONDUCTOR DEVICE - The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips. | 04-02-2015 |