Patent application number | Description | Published |
20080271380 | Method of fabricating abrasive having sliding and grinding effects - An abrasive is fabricated to obtain sliding and grinding effects. In the abrasive, grinding particles are wrapped by a wrapping material. Various sizes and shapes of molds and micro components can be finely polished to obtain mirror-grade surfaces. | 11-06-2008 |
20080271382 | Method of fabricating abrasive having sliding and grinding effects - An abrasive is fabricated to obtain sliding and grinding effects. In the abrasive, grinding particles are wrapped by a wrapping material. Various sizes and shapes of molds and micro components can be finely polished to obtain mirror-grade surfaces. | 11-06-2008 |
20100216377 | Grinding structure having micro ball - A micro-grinding device with a micro ball at an end is made. The micro ball is deposited with grinding particles. The grinding device is able to grind a surface having an arc degree more than 180 degrees. Thus, the present invention is suitable to be used for forming micro molds, removing burr, and micro-milling, micro-paring or micro-grinding a surface. | 08-26-2010 |
20100243430 | Apparatus and method for magnetic field assisted electrochemical discharge machining - In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining. | 09-30-2010 |
Patent application number | Description | Published |
20100093484 | POWER TRANSMISSION DEVICE - A power transmission device is provided. The power transmission device includes a motor, an intermediate gearset, and a planetary gearset assembly. The motor includes a motor output shaft. The intermediate gearset has an input gear connected to the motor output shaft. The motor drives an intermediate gear output shaft of an output gear of the intermediate gearset. The planetary gearset assembly has an input end connected to the intermediate gear output shaft. The intermediate gear output shaft drives a planetary gear output shaft of an output end of the planetary gearset assembly. | 04-15-2010 |
20100123372 | MOTOR INTEGRATED TO ELECTRONIC DEVICE - An integrated motor, integrated to a structural part and an electronic substrate of an electronic device, includes a base formed on the structural part of the electronic device, a rotor having a load, and a stator having a plurality of winding coils and a driving circuit respectively shaped on the electronic substrate of the electronic device, for driving the rotor to rotate in a specific direction. | 05-20-2010 |
20100143164 | FAN MOTOR STRUCTURE - A fan motor structure is provided. A fan is disposed within an accommodating hole at a center of a body. A permanent magnet and a printed circuit board (PCB) provided with plural coils are respectively disposed between an upper ring and a base of the body. An axial air gap is formed between the coils and the permanent magnet. A bearing is disposed between the upper ring and the base. The fan blades of the fan extend from the periphery of the accommodating hole toward the center of the fan. An axle center of the fan overlaps with that of the body. The coils after being supplied with a current create a flux linkage with the permanent magnet. Due to the flux linkage and the axial air gap between the coils and the permanent magnet, the upper ring is forced to rotate, thus driving the fan to rotate. | 06-10-2010 |
20100323836 | CONCENTRICALLY ALIGNED PLANETARY GEAR ASSEMBLY AND POWER TRANSMISSION DEVICE - A concentrically aligned planetary gear assembly and a power transmission device are provided. The planetary gear assembly includes a ring gear, having a bottom cover and a top cover; a graded transmission module; a power input module, having a power shaft and a power input gear; and a power output module, having a planet wheel set and an output shaft. The graded transmission module includes a planetary arm and plural planetary gears. The planetary arm has a transmission tray and a coaxial sun gear, in which the transmission tray has plural planetary pivoting structures, and an outer diameter of the transmission tray is coaxial with an addendum circle of the internal gear, so as to be slidingly fitted to each other. The plurality of planetary gears is engaged with the internal gear, pivoted on the planetary pivoting structures, and freely rotates with respect to the planetary pivoting structures. | 12-23-2010 |
20110037354 | STATOR STRUCTURE, MICROMOTOR HAVING THE SAME AND MANUFACTURING METHOD THEREFOR - A stator structure, a micromotor having the same, and a micromotor manufacturing method therefor are provided. In the micromotor configured with the stator, a rotor, the stator and a case are disposed outward in a radial direction. The rotor is pivotly connected in the case and the stator includes a FPC assembly which is configured with a plurality of coil windings and at least one position signal generating unit and is circumferentially disposed between the rotor and the case, with the rotor as the axis. Configuration positions of the coil windings and the position signal generating unit are corresponding to magnetic poles of the rotor. | 02-17-2011 |
20110133591 | COIL STRUCTURE FOR A CORELESS MOTOR - A coil structure for a coreless motor includes a plurality of first conductive traces and a plurality of second conductive traces. The first conductive traces are disposed in succession relative to one another, and are each arranged into a planar spiral configuration having a substantially polygonal shape. At least one adjacent pair of the first conductive traces cooperate to define a space therebetween. Each of the second conductive traces is disposed in the space defined by a corresponding adjacent pair of the first conductive traces, and is arranged into a planar spiral configuration that has one of a substantially triangular shape and a substantially rhombic shape so as to substantially fill the space. | 06-09-2011 |
20120074887 | Back EMF Measuring Method for Multi-Phase BLDC Motor - A back EMF measuring method for multi-phase BLDC motor is proposed, which includes a driving process and a measuring process. The driving process energizes a plurality of phase windings of a detected motor by driving signals generated by a computing unit to rotate a rotor of the detected motor to a predetermined speed. The measuring process selects one of the phase windings as a target phase winding, continuously sends the driving signals to the phase windings other than the target phase winding but stops the driving signal sent to the target phase winding by the computing unit, and measures the back EMF of the target phase winding by a signal sensing unit. | 03-29-2012 |
Patent application number | Description | Published |
20120286359 | LATERAL-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE (LDMOS) AND FABRICATION METHOD THEREOF - A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well. | 11-15-2012 |
20130126968 | HIGH VOLTAGE SEMICONDUCTOR DEVICE - A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region. | 05-23-2013 |
20130168767 | Lateral Diffused Metal-Oxide-Semiconductor Device - The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region. | 07-04-2013 |
20140035034 | LATERAL-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE (LDMOS) AND FABRICATION METHOD THEREOF - A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well. | 02-06-2014 |