Patent application number | Description | Published |
20140081115 | METHOD AND SYSTEM FOR ON-LINE DECISION MAKING SUPPORT - A method for on-line decision making support, which includes sensing biological signals of a subject upon detection of a decision making process during a performance of a task, and recording biological activity of the subject. Upon completing the decision making process, the recorded biological activity is released to a data processing system for analysis, which compares the recorded biological activity with a profile model for the subject and calculates a confident value for the recorded biological activity against the profile model for the subject. If the confident value does not meet a predefined threshold, a post-processing procedure is performed, wherein the predefined threshold represents a desired performance of the subject on the task. | 03-20-2014 |
20140145936 | METHOD AND SYSTEM FOR 3D GESTURE BEHAVIOR RECOGNITION - A method for 3D gesture behavior recognition is disclosed, which includes detecting a behavior change of one or more attendees at a meeting and/or conference; classifying the behavior change; and performing an action based on the behavior change of the one or more attendees. Another method, system and computer readable medium for 3D gesture behavior recognition as disclosed, includes obtaining temporal segmentation of human motion sequences for one or more attendees; determining a probability density function of the temporal segmentations of the human motion sequences using a Parzen window density estimation model; computing a bandwidth for determination of a median absolute deviation; updating the Parzen window to adapt for changes in the motion sequences for the one or more attendees; and detecting actions based. | 05-29-2014 |
20140242559 | METHOD AND SYSTEM FOR EEG-BASED TASK MANAGEMENT - A method and system are disclosed for determining a task for a subject, which includes sensing electrical activity along a scalp of a subject; characterizing a mental state of the subject based on the electrical activity of the subject; comparing the mental state of the subject with a pre-defined task list to select a task for the subject based on the mental state of the subject; and assigning the task to the subject based on the comparison of the mental state of the subject and the pre-defined task list. | 08-28-2014 |
Patent application number | Description | Published |
20130069155 | Termination for Superjunction VDMOSFET - A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions. | 03-21-2013 |
20140292380 | SEMICONDUCTOR DEVICE WITH A CURRENT SAMPLER AND A START-UP STRUCTURE - A semiconductor device with a current sampler and a start-up structure, comprises first, second and third high-voltage transistors, and a resistor, wherein: a drain terminal of the first transistor is respectively connected to a drain terminal of the second transistor, a drain terminal of the third transistor and one end of the resistor; a source terminal of the first transistor is grounded, and a gate terminal of the first transistor is connected to a gate terminal of the second transistor; the other end of the resistor is connected to a gate terminal of the third transistor; wherein the resistor is wound and formed in a common voltage withstand region of the first transistor, the second transistor and the third transistor, or in a voltage withstand region of the first transistor only, or in the voltage withstand region of the third transistor only. | 10-02-2014 |
20140362488 | SHORT-CIRCUIT PROTECTION STRUCTURE - A short-circuit protection structure comprises first and second high-voltage transistors, a control circuit, a first current sampling resistor for the first transistor and a second current sampling resistor for the second transistor. The control circuit controls switching period and duty cycle of the first transistor and the second transistor, a drain terminal of the first transistor is connected to a drain terminal of the second transistor, a source terminal of the first transistor is connected to the first current sampling resistor, and a source terminal of the second transistor is connected to the second current sampling resistor; a gate terminal of the first transistor and a gate terminal of the second transistor are connected to a driver stage of the control circuit. The size of the second transistor is smaller than the first transistor, and the current of the first transistor is sampled by the second transistor. | 12-11-2014 |