Patent application number | Description | Published |
20090053867 | PLASMA TREATED METAL SILICIDE LAYER FORMATION - Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer. | 02-26-2009 |
20090250697 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure. | 10-08-2009 |
20110156036 | METHOD FOR DETECTING A VOID - Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure. | 06-30-2011 |
20110306201 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer. | 12-15-2011 |
Patent application number | Description | Published |
20080253181 | METHOD FOR PROGRAMMING A SEMICONDUCTOR MEMORY DEVICE - A method for programming a semiconductor memory device including such a program sequence as to program target threshold levels constituting multi-level data into multiple memory cells, which are simultaneously selected, wherein the program sequence is controlled to finish programming the multiple memory cells in order of height of the target threshold levels. | 10-16-2008 |
20100169061 | SIMULATION APPARATUS FOR A SEMICONDUCTOR DEVICE - A simulation apparatus of semiconductor device includes a first calculator, a second calculator, a third calculator, a fourth calculator, and a controller. The first calculator applies a voltage to an area which functions as a virtual electrode, and setting a pseudo-Fermi level of a first carrier in the area functioning as the virtual electrode to calculate a first carrier density. The second calculator analyzes continuous equation of a second carrier to calculate a second carrier density. The third calculator uses the first carrier density as a function of an electrostatic potential, and solving a first equation of the function and a Poisson's equation to calculate an electrostatic potential and the first carrier density expressed by the function. The fourth calculator calculates a current density of the first carrier to calculate a current flowing. The controller controls the voltage applied to the virtual electrode. | 07-01-2010 |
20110303958 | NONVOLATILE SEMICONDUCTOR MEMORY - According to one embodiment, a nonvolatile semiconductor memory includes control gates provided in an array form, the control gates passing through the first semiconductor layer, data recording layers between the first semiconductor layer and the control gates, two first conductive-type diffusion layers at two ends in the first direction of the first semiconductor layer, two second conductive-type diffusion layers at two ends in the second direction of the first semiconductor layer, select gate lines extending in the first direction on the first semiconductor layer, and word lines extending in the second direction on the select gate lines. The select gate lines function as select gates shared by select transistors connected between the control gates and the word lines arranged in the first direction. Each of the word lines is commonly connected to the control gates arranged in the second direction. | 12-15-2011 |
20130248965 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, there is provided a nonvolatile semiconductor memory device including a substrate, a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate, a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction, an intermediate layer formed on a surface of the second insulating layer, a third insulating layer formed on a surface of the intermediate layer, and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction. | 09-26-2013 |
20130250670 | MAGNETORESISTIVE ELEMENT AND WRITING METHOD OF MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer. | 09-26-2013 |
20140254276 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises memory cells each which stores data with two or more levels. Each of the memory cells includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer, and the second insulating layer includes a ferroelectric layer. | 09-11-2014 |