Kenji Fujimoto
Kenji Fujimoto, Nagaoka-Shi JP
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20100092266 | CAN MANUFACTURING DEVICE AND CAN MANUFACTURING METHOD - A can manufacturing device in which a tool supporting base has: a plurality of working tool units that support a plurality of working tools; a supporting member that supports a plurality of working tool units; and a linear driving mechanism that reciprocates the working tool units with respect to the supporting member in the axial direction of a workpiece. The linear driving mechanism has: a guide section fixed on the supporting member with a base plate therebetween; a slide rail that is fixed on the working tool unit and slides along the guide section; an electromagnetic coil provided on the base plate; a magnet plate that is provided on the working tool unit and generates, between the electromagnetic coil and itself, a thrust force for the guide section; and a supply pipe that is provided at the electromagnetic coil and supplies coolant to the inside of the electromagnetic coil. | 04-15-2010 |
Kenji Fujimoto, Aichi-Ken JP
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20110288683 | GRIP POSITION CALCULATOR AND METHOD OF CALCULATING GRIP POSITION - The grip position calculator determines a grip position where the fingers can grip a workpiece in any orientation of the workpiece. The calculator then determines an initial position where the finger tips can grip the workpiece and set the initial position as a point of calculation. Then an allowable gripping force is calculated which is an index that indicates an allowable force to be applied to the workpiece at point. Then other allowable forces are calculated for a plurality of points near the point of calculation. Then the point of calculation is selected as a possible gripping position if the allowable force a point is greater than any of the allowable forces. Otherwise, one of the points is selected for another point of calculation where the greatest allowable force (De) has been calculated and return to calculating an allowable gripping force. | 11-24-2011 |
Kenji Fujimoto, Fukuoka-Ken JP
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20120027341 | LIGHT EMITTING DEVICE AND OPTICAL TRANSMISSION SYSTEM - According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer. | 02-02-2012 |
20120235191 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND PHOTOCOUPLER - According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first layer, a second layer and a distributed Bragg reflector. The light emitting layer has a first and second surfaces and is capable of emitting emission light having a peak wavelength in a range of 740 nm or more and 830 nm or less. The first layer is provided on a side of the first surface and has a light extraction surface. The second layer is provided on a side of the second surface. The distributed Bragg reflector layer is provided on a side of the second layer. A third and fourth layers are alternately stacked. The distributed Bragg reflector layer is capable of reflecting the emission light toward the light extraction surface. The third and fourth layers each have a bandgap wavelength shorter than the peak wavelength. | 09-20-2012 |
Kenji Fujimoto, Niiza-Shi JP
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20120079446 | SEMICONDUCTOR MODULE DESIGN METHOD AND SEMICONDUCTOR MODULE - A semiconductor module made from a compound semiconductor or diamond and loaded with high performance power semiconductor devices can be obtained at low cost. In a semiconductor module, four (semiconductor chips) of same specifications are arranged in array, two longitudinally and two transversally, on a single lead frame. Achieving a high yield of manufacturing diode chips and reducing the unuseful area of diode chips need to be satisfied at the same time to obtain such a semiconductor module at low cost. The use of an index, which is the product of the yield Y | 03-29-2012 |
Kenji Fujimoto, Ishikawa-Ken JP
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20140084305 | PHOTOCOUPLER AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A photocoupler includes: a light emitting element; a light receiving element; and a bonding layer. The light emitting element includes a semiconductor stacked body, and a first and a second electrode. The semiconductor stacked body includes a light emitting layer. The light receiving element includes a first and a second electrode on a side of a light receiving surface. The bonding layer bonds the light emitting element and the light receiving surface, and has transparency and insulating property. | 03-27-2014 |
20140284548 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT COUPLING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor laminated body provided on a semiconductor substrate. The semiconductor laminated body includes a light emitting layer. The light emitting layer includes a quantum well structure made by alternately laminating n (an integer of not less than 1) well layers and (n+1) barrier layers and emits light with a peak wavelength of 650 nm to 1000 nm. Each of the well layers has a thickness of smaller than 15 nm. Each of the barrier layers has a thickness of 15 nm to 50 nm. | 09-25-2014 |
Kenji Fujimoto, Kanazawa Ishikawa JP
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20160064599 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL COUPLING DEVICE - A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of In | 03-03-2016 |