Kim, Gangnam-Gu
Bong Ok Kim, Gangnam-Gu KR
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20120217485 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are novel organic electroluminescent compounds and organic electroluminescent devices using the same. Since the organic electroluminescent compound exhibits good luminous efficiency and excellent life property compared to the existing material, it may be used to manufacture OLED devices having superior operation life and consuming less power due to improved power efficiency. | 08-30-2012 |
20120235123 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are a novel organic electroluminescent compound and an organic electroluminescent device using the same. More particularly, the organic electroluminescent compound disclosed herein is represented by Chemical Formula 1: | 09-20-2012 |
20140061609 | NOVEL COMPOUNDS FOR ORGANIC ELECTRONIC MATERIAL AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are novel compounds in accordance with Formula I for an organic electronic material and an organic electroluminescent device using same. The compound for an organic electronic material disclosed herein exhibits high electron transport efficiency and thus prevents crystallization upon manufacturing a device, and also facilitates the formation of a layer, thus improving current properties of the device. Thereby, OLED devices having improved power efficiency as well as reduced operating voltage can be manufactured. | 03-06-2014 |
20140084271 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are novel organic electroluminescent compounds and organic electroluminescent devices using the same. Since the organic electroluminescent compound exhibits good luminous efficiency and excellent life property, it may be used to manufacture OLED devices having superior operation life and consuming less power due to improved power efficiency. | 03-27-2014 |
20140107338 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention relates to a novel organic electroluminescent compound and an organic electroluminescent device using the same. Said organic luminescent compound provides an organic electroluminescent device which has high luminous efficiency and a long operation lifetime and requires a low driving voltage improving power efficiency and power consumption. | 04-17-2014 |
20140114069 | NOVEL COMPOUNDS FOR ORGANIC ELECTRONIC MATERIAL AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention relates to electroluminescent compounds of formula 1 where A and/or B represent fluorene, carbazole, dibenzo[b,d]thiophene or dibenzo[b,d]furan derivatives and L | 04-24-2014 |
20150025239 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention relates to a novel organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent compound according to the present invention is better in luminous efficiency and lifespan characteristics compared to conventional materials. Using the compounds of the present invention, it is possible to manufacture an OLED device with a long operational lifespan. In addition, the compounds can improve the power efficiency of the device to reduce overall power consumption. | 01-22-2015 |
Bong Ok Kim, Gangnam-Gu JP
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20120206037 | NOVEL ORGANIC ELECTROLUMINESCENT COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are a novel organic electroluminescent compound and an organic electroluminescent device using the same. | 08-16-2012 |
Byeong Keuk Kim, Gangnam-Gu KR
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20140180086 | BALLOON CATHETER - The present invention relates to a balloon catheter. The invention comprises: a first shaft; an expandable balloon which is attached to the front end of the first shaft; an expandable lumen which is formed inside the first shaft and to which a liquid required for expanding the balloon is provided; a second shaft which extends from the front end of the first shaft to which the balloon is attached and has a wire hole through which a guide wire passes; and a guide wire lumen, which is formed inside the second shaft and through which the guide wire passes. According to the invention, the first and second shafts are coaxially connected and the expandable lumen and the guide wire lumen are respectively formed in each shaft in order to reduce the overall diameter of the shaft, thereby facilitating surgery and improving pushability. | 06-26-2014 |
Byung-Ho Kim, Gangnam-Gu KR
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20090096064 | METHOD OF FORMING POLY PATTERN IN R-STRING OF LCD DRIVE IC AND STRUCTURE OF THE SAME - A method of forming a poly pattern for minimizing a change in a storage value in the R-string pattern of the LCD panel drive IC (LDI) that includes depositing a poly silicon layer used as a resistor in a R-string structure over a semiconductor substrate; and then forming a poly silicon layer pattern having interconnected H-shaped cross-sections; and then forming a silicide-anti blocking area (SAB) layer over the poly silicon layer pattern and then patterning the SAB layer to thereby form SAB layer patterns over portions of the poly silicon layer pattern while exposing other portions of the poly silicon layer pattern; and then forming a silicide layer over the exposed portions of the poly silicon layer pattern. Therefore, although the size of the SAB pattern is reduced due to problems caused in processing steps, the poly line that occupies most of the resistance does not change so that a change in the resistance is entirely reduced. | 04-16-2009 |
Dae-Kyeun Kim, Gangnam-Gu KR
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20090140375 | METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE - A semiconductor device can include a semiconductor substrate, a first trench formed in the semiconductor substrate, a second trench formed in the semiconductor substrate, a first device isolation layer formed in the first trench, a second device isolation layer formed in the second trench having a different structure than the first device isolation layer. | 06-04-2009 |
20100117187 | METHOD FOR FORMING GATE IN FABRICATING SEMICONDUCTOR DEVICE - In fabricating a semiconductor device, by forming gate electrode lines to meet a design rule with additional simple processes such as a masking process, an etching process and the like for securing an isolation space between the gate electrode lines according to the design rule, the method of embodiments can overcome a problem in the related gate forming process so that a chip size is increased and high mask quality is required since the process has to proceed in consideration of additional design guide rules B | 05-13-2010 |
Dae-Young Kim, Gangnam-Gu KR
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20090065806 | MOS TRANSISTOR AND FABRICATION METHOD THEREOF - A MOS transistor and a fabrication method thereof are disclosed. The mobility of electrons or holes serving as charge carriers of the MOS transistor can be improved by forming a lattice stress-causing material in source/drain regions of a MOS transistor or by forming a gapping layer having a tensile stress in the MOS transistor. As a result, a driving current of the MOS transistor may be reduced. | 03-12-2009 |
Do-Hun Kim, Gangnam-Gu KR
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20100090310 | BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A bipolar transistor includes an isolation layer formed in a bipolar region on a semiconductor substrate, a conductive film formed over an upper portion of the isolation layer, n+ and p+ junction regions formed within the conductive film, a first silicide film formed over portions of an upper boundary of the n+ and p+ junction regions, the first silicide film defining openings over the upper boundary of the n+ and p+ junction regions, a second silicide film formed in the openings defined by the first silicide film over the upper boundary portions of the n+ and p+ junction regions, a plurality of plugs connected to the second silicide film, and a plurality of electrodes connected to each of the plugs. In this way, embodiments not only suppress the occurrence of parasitic junction between wells, but also simplify the processes by omitting well processes by forming an isolation layer in a bipolar region, forming a conductive film, and applying ion-implantation process to the conductive film to form a junction region. | 04-15-2010 |
Gwan-Ha Kim, Gangnam-Gu KR
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20100167543 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor power device may includes: performing a grinding process on a back side of a wafer, performing a first plasma process and a rapid thermal process sequentially after performing the grinding process, performing a second plasma process after performing the rapid thermal process, and performing a metal thin film process after performing the second plasma process. The method for manufacturing a semiconductor device may be capable of preventing a peeling effect from occurring on a wafer surface by removing hydrogen from the wafer surface by controlling surface roughness to a desired level by treating the wafer surface using hydrogen plasma and a rapid thermal process (RTP) after subjecting a backside of the wafer to a grinding process. | 07-01-2010 |
Hye-Jin Kim, Gangnam-Gu KR
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20080291715 | NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE MATERIALS - A nonvolatile memory device includes a nonvolatile memory cell, a read circuit and a control bias generating circuit. The nonvolatile memory cell has a resistance level that changes depending on stored data. The read circuit reads the resistance level of the nonvolatile memory cell by receiving a control bias and supplying the nonvolatile memory cell a read bias based on the control bias. The control bias generating circuit receives an input bias, generates the control bias based on the input bias and supplies the control bias to the read circuit. A slope of the control bias to the input bias is less than 1. | 11-27-2008 |
Hyun-Tae Kim, Gangnam-Gu KR
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20100163961 | METHOD FOR MANUFACTURING SEMICONDUCTOR FLASH MEMORY AND FLASH MEMORY CELL - A semiconductor flash memory includes a tunnel oxide film formed over a semiconductor substrate, a first spacer composed of polysilicon formed over the semiconductor substrate including the tunnel oxide film, a second spacer composed of an insulating material formed at sidewalls of the first spacer, a dielectric film formed at the uppermost surface of the first spacer and the second spacer, a control gate formed at the uppermost surface of the dielectric film, and a third spacer composed of an insulating material formed at and contacting sidewalls of the second spacer, the dielectric film and the control gate. A first source/drain region formed may be formed in the semiconductor substrate and self-aligned with the first spacer and a second source/drain region may be formed in the semiconductor substrate and self-aligned with the second spacer. | 07-01-2010 |
Jae Heon Kim, Gangnam-Gu KR
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20130093353 | APPARATUS FOR AUTOMATICALLY CONTROLLING THE ILLUMINATION OF LED LIGHTING - The present invention relates to an apparatus for automatically controlling illuminance, which transmits a dimming signal based on the zero-crossing of AC power using an illuminance control electronic switch. An apparatus for automatically controlling illuminance of Light-Emitting Diode (LED) lighting according to an embodiment of the present invention includes a dimming control electronic switch for, if manipulation of a switch by a user is sensed during supply of Alternating Current (AC) power to an LED lamp, interrupting supply of the AC power during a preset period of time based on zero-crossing of the AC power, and an LED lamp control device for controlling illuminance of the LED lamp by detecting supply and interruption of the AC power. | 04-18-2013 |
Jang Ho Kim, Gangnam-Gu KR
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20080297465 | Liquid Crystal Display Device and Driving Method Thereof - An embodiment of the present invention provides a method of driving a liquid crystal display device including a liquid crystal panel, and a backlight assembly providing light to the liquid crystal panel by a field sequential driving method, the method includes: displaying an image, at the liquid crystal panel and the backlight assembly, by time-dividing two frames into five sub-frames, wherein when images are displayed in the two frames, images of a first frame and a second frame of the two frames share one blue light. | 12-04-2008 |
Jea-Hee Kim, Gangnam-Gu KR
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20080296678 | METHOD FOR FABRICATING HIGH VOLTAGE DRIFT IN SEMICONDUCTOR DEVICE - A drift of a high voltage transistor formed using an STI (shallow trench isolation). The method for forming a high voltage drift of a semiconductor device can include forming a pad insulating film on a semiconductor substrate having a high voltage well; and then opening a region of the semiconductor substrate by patterning a portion of the pad insulating film; and then etching the opened region of the semiconductor substrate to form a trench; and then forming a first drift in the semiconductor substrate by performing a first ion implantation process using the patterned pad insulating film as a mask; and then forming a device isolation film by gap-filling a device isolation material in the trench; and then removing the patterned pad insulating film and then forming a gate electrode overlapping a portion of the device isolation film; and then forming a second drift connected to the first drift by performing a second ion implantation process in a region of the semiconductor substrate exposed by the gate electrode. | 12-04-2008 |
Jin-Hyuk Kim, Gangnam-Gu KR
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20130278551 | CAPACITIVE TOUCH SENSOR - The present invention relates to a capacitive touch sensor, and relates to a touch sensor which precisely senses whether there is any touch, without using a reference voltage or reference current in the touch sensor but by converting data between neighboring channels into two types of data having different polarities and by comparing the same. The invention makes it possible to miniaturize a structure of the touch sensor and to ensure compatibility allowing application to a variety of touch panels by minimizing the influence of noise from the outside environment. More specifically, the present invention provides a capacitive touch sensor comprising: at least one receiver channel R | 10-24-2013 |
Jong-Shin Kim, Gangnam-Gu KR
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20120311720 | METHOD FOR PROTECTING APPLICATION AND METHOD FOR EXECUTING APPLICATION USING THE SAME - An application protection method and an application execution method using the same are provided. The application protection method generates a key needed to execute the application which is provided to a user terminal using information on the user terminal, information on the application, and a part of text; and transmits the generated key to the user terminal. Therefore, the application is executed on the device which has a legal right for the application, thereby preventing the illegal use of the application. | 12-06-2012 |
Joog-Guk Kim, Gangnam-Gu KR
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20090017618 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device that includes heating a wafer on which an Al—Cu sputtering thin film is formed before patterning the Al—Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C. and 600° C. The process temperature in heating the process wafer is not higher than the flow temperature of aluminum or is the temperature at which a reflow process can be performed. | 01-15-2009 |
Ki-Nam Kim, Gangnam-Gu KR
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20080205163 | NONVOLATILE MEMORY DEVICE AND DRIVING METHOD THEREOF - Provided are a nonvolatile memory device and a driving method thereof. In the method of driving a nonvolatile memory device, a structural shape and position of a memory cell to be driven is determined, and then the memory cell is driven with an optimized operating condition according to a distribution of the memory cell using a determination result. | 08-28-2008 |
Kwang-Jeon Kim, Gangnam-Gu KR
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20090146129 | MULTI-BIT MEMORY CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor memory cell including phase change material. A multi-bit memory cell may implement phase change material. Various kinds of information can be stored in one memory cell. A chip size may be minimized without sacrificing capacity and/or memory performance, as compared with a one-bit memory cell. | 06-11-2009 |
Min-Hwahn Kim, Gangnam-Gu KR
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20090167359 | CURRENT MODE LOGIC CIRCUIT AND CONTROL APPARATUS THEREFOR - Embodiments relate to a current mode logic circuit, which may include a first NMOS transistor whose drain may be coupled to a first load and whose gate may be coupled to an input terminal through which data may be inputted, a second NMOS transistor whose drain may be coupled to a second load and gate may be coupled to an input terminal through which a negative reference voltage may be applied, and a third NMOS transistor whose drain may be coupled to a source of each of the first and the second NMOS transistors and whose gate may be coupled to an input terminal through which a reference voltage may be applied. Bulk biases of the first, second, and third NMOS transistors may be independently adjusted to control at least one of a leakage current and an operation speed of the NMOS transistors. | 07-02-2009 |
Min-Seok Kim, Gangnam-Gu KR
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20090315109 | SEMICONDUCTOR DEVICE HAVING OTP CELLS AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a deep N-type well region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of a semiconductor substrate over which an oxide film is formed, a dwell region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the N-type well region, a shallow N-type well region and a drain region which may be respectively formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the deep N-type well region, a source region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the dwell region, a contact hole which may be formed by being filled with a metal after forming an inter-metal dielectric layer over a portion of the semiconductor substrate over which the source region is formed, and a metal line formed over a portion of the contact hole. | 12-24-2009 |
Myoung Soo Kim, Gangnam-Gu KR
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20090111283 | METHOD FOR FORMING INTERLAYER INSULATING FILM OF SEMICONDUCTOR DEVICE - A method for forming an interlayer insulating film of a semiconductor device comprises forming an active pattern over a substrate, forming a spin-on dielectric film over the substrate including the active pattern, and irradiating an electron beam over the spin on dielectric film to form an interlayer insulating film. | 04-30-2009 |
Sang-Chul Kim, Gangnam-Gu KR
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20080284023 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BOAC/COA - A BOAC/COA of a semiconductor device is manufactured by forming a conductive pad over a semiconductor device, forming a passivation oxide film over the semiconductor device including the conductive pad, forming an oxide film over the entire surface of the conductive pad and the passivation oxide film, forming an oxide film pattern defining a bond pad region on the conductive pad, sequentially forming a barrier film and a metal seed layer over the oxide film pattern, the passivation oxide film and the conductive pad, forming a metal layer over the metal seed layer, planarizing the metal layer exposing the oxide film pattern and portions of the barrier film and the metal seed layer, and removing the oxide film pattern by an etching process. | 11-20-2008 |
20100164090 | SEMICONDUCTOR PACKAGE APPARATUS AND MANUFACTURING METHOD THEREOF - A semiconductor package apparatus includes a first semiconductor chip bonded onto a substrate of which metal wire turning upward; and a second semiconductor chip conductively bonded onto the first semiconductor chip in a vertical direction such that a metal wire of the second semiconductor chip and the metal wire of the first semiconductor chip have facing points. The semiconductor package apparatus includes a third semiconductor chip conductively bonded onto the first semiconductor chip in the vertical direction to be disposed horizontally with the second semiconductor chip such that a metal wire of the third semiconductor chip and the metal wire of the first semiconductor chip have facing points. | 07-01-2010 |
Sang Eun Kim, Gangnam-Gu KR
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20120178920 | METHOD FOR PREPARING [18F]FALLYPRIDE WITH LOW BASE CONCENTRATION - A method for preparing [ | 07-12-2012 |
Sang-June Kim, Gangnam-Gu KR
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20090115533 | VOLTAGE CONTROLLED OSCILLATOR - A voltage controlled oscillator may include a plurality of inverting units connected in serial and connected between a first and a second voltage sources to produce an oscillating frequency. Each of the inverting units may have a first current source for producing a constant current that may determine an oscillating frequency, a switching inverter connected between the first voltage source and the first current source that may produce a current having a phase opposite to an output current from a preceding inverting unit, and a frequency adjuster that may control the oscillating frequency by charging and/or discharging the current from the inverting unit. | 05-07-2009 |
Suk-Ki Kim, Gangnam-Gu KR
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20150049062 | MOTION GESTURE SENSING MODULE AND MOTION GESTURE SENSING METHOD - A motion gesture sensing module includes a light source emitting light, and a light sensor unit including at least two optical detectors sensing light reflected from a subject, in which an optical block is disposed in a light receiving path of the light sensor unit and individually separates a detectable zone of each of the optical detectors, thereby determining a motion or gesture of the subject based on output of the light sensor unit. Further, a motion gesture sensing method is a contactless motion sensing method, in which a light source emits light, light reflected from a subject is received by at least two optical detectors, and output values of respective optical detectors are compared to determine a motion of a subject, thereby sensing motion gesture of the subject by individually separating a detectable zone of the optical detector and receiving the light reflected from the subject. | 02-19-2015 |
Woo Kyum Kim, Gangnam-Gu KR
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20140373138 | METHOD AND APPARATUS FOR PREVENTING DISTRIBUTED DENIAL OF SERVICE ATTACK - An apparatus for preventing a distributed denial of service (DDoS) attack transmits a redirect message containing a redirect URL (Uniform resource Locator) to a client terminal that has transmitted a request for accessing a web server, in place of the web server. The apparatus authenticates the client terminal that re-sends the request for accessing the web server as a normal client terminal, and permits the client terminal to access the web server. | 12-18-2014 |
Yeon Kyeong Kim, Gangnam-Gu KR
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20110057427 | VEHICLE - Disclosed is a vehicle including a seat on which a passenger may be seated; an airbag cushion that is expanded according to an inflow of a gas to protect the passenger seated on the seat; an inflator that introduces the gas into the airbag cushion; a first vent hole provided at the airbag cushion to exhaust therethrough the gas introduced from the inflator; a second vent hole provided at the airbag cushion to face the passenger to exhaust therethrough the gas introduced from the inflator; and a vent amount adjustment member connected to the second vent hole to adjust the amount of the gas exhausted through the second vent hole depending on whether an adult is seated on the seat or a child restraint system is installed on the seat. | 03-10-2011 |