Patent application number | Description | Published |
20110086353 | Identification of MicroRNAs (miRNAs) in Fecal Samples as Biomarkers for Gastroenterological Cancers - A simple, rapid, inexpensive, and promising commercial biomarker assay method for multiple diseases is described herein. The present invention detects miRNA-based biomarkers in human stool specimens. The method of the present invention amplifies miRNA directly from stool specimens without any prior miRNA extraction. Differential expression of specific microRNAs in stool of colorectal cancer CRC and adenoma patients suggest fecal microRNAs as a novel potential biomarker for colorectal neoplasia detection. The method of the present invention has diagnostic, prognostic, and therapeutic relevance for gastroenterological cancers/colorectal cancer and as well as further acquired or hereditary GI diseases. | 04-14-2011 |
20120088687 | MicroRNAs (miRNA) as Biomarkers for the Identification of Familial and Non-Familial Colorectal Cancer - A technique for the analysis of global miRNA signatures including a larger panel of miRNAs in various groups of well-characterized colorectal cancers (CRCs) is described in the instant invention. The results presented herein provide a large list of miRNAs that are dysregulated in CRC compared to the normal colonic tissue, and, more importantly, the present invention shows for the first time that Lynch syndrome and sporadic MSI tumors exhibit a different miRNA signature that distinguishes them. | 04-12-2012 |
20120207856 | MSH3 Expression Status Determines the Responsiveness of Cancer Cells to the Chemotherapeutic Treatment with PARP Inhibitors and Platinum Drugs - Methods for treating a patient at risk for or diagnosed with colorectal cancer are disclosed herein. The method of the present invention determines the overall expression of MSH3 in cells suspected of being colorectal cancer cells from the patient and predicting the efficacy of therapy with a genotoxic anti-neoplastic agent for treating the patient, wherein a decrease in the overall expression of MSH3 in the patient cells when compared to the expression of MSH3 in normal colorectal cells indicates a predisposition to responsiveness to genotoxic anti-neoplastic agent therapy, wherein the therapy comprises administering an effective amount of the genotoxic anti-neoplastic agent therapy to patients. | 08-16-2012 |
20120237929 | LONG INTERSPERSED NUCLEAR ELEMENTS (LINE-1) AND ALU HYPOMETHYLATION AS BIOMARKERS FOR COLORECTAL CANCER METASTASIS - A method for determining a colorectal cancer metastasis in a human subject suffering from a primary colorectal cancer (CRC) is described herein. The method of the present invention comprises the steps of: i) identifying the human subject suffering from the primary CRC, ii) obtaining one or more biological samples from the human subject, iii) detecting a methylation level of Alu, LINE-1, or both in the one or more biological samples, and iv) increasing the level of the colorectal metastatic stage in the human subject when the methylation level of Alu, LINE-1 is lower compared to a corresponding control methylation level of Alu, LINE-1. | 09-20-2012 |
20120238463 | LINE-1 Hypomethylation as a Biomarker for Early-Onset Colorectal Cancer - A method for detecting an early-onset of colorectal cancer in a human subject is disclosed herein. The method comprises the steps of: (i) identifying the human subject suspected of suffering from a colorectal cancer, (ii) obtaining one or more biological samples from the human subject; (iii) determining a LINE-1 methylation level for the one or more biological samples; and (iv) comparing the LINE-1 methylation level to a LINE-1 methylation control level, wherein a higher degree of the LINE-1 methylation level is indicative of an early-onset colorectal cancer. | 09-20-2012 |
20120264131 | CHANGES IN THE EXPRESSION OF miR-200c/141 CLUSTER OF microRNAs AS BIOMARKERS FOR EPITHELIAL-TO-MESENCHYMAL TRANSITION IN HUMAN COLORECTAL CANCER METASTASIS - The present invention includes methods, kits and biomarkers for detecting and determining the development of colorectal cancer (CRC) metastasis based on changes in the expression pattern of one or more microRNAs (miR) or miR clusters that include the miR-200/141 family. | 10-18-2012 |
20120295267 | Detecting DNA Mismatch Repair-Deficient Colorectal Cancers - Use of a CAT25 mononucleotide marker in a novel tetraplex PCR for the detection of MSH6-defective colorectal cancers (CRCs) is described herein. The tetraplex PCR of the present invention offers a facile, robust, less expensive (compared to the original pentaplex assay), highly sensitive, and specific assay for the identification of microsatellite instability (MSI) in CRCs. | 11-22-2012 |
20130164279 | Micro RNA-148A as a Biomarker for Advanced Colorectal Cancer - The present invention includes methods of detection, diagnosis, prognosis, and treatment of a patient suspected of having a colorectal cancer comprising obtaining one or more samples of the patient, determining a level of expression of miR-148a or the level of methylation of a miR-148a promoter, and predicting a response to a cytotoxic chemotherapy cancer treatment. | 06-27-2013 |
20130288247 | NOVEL DNA HYPERMETHYLATION DIAGNOSTIC BIOMARKERS FOR COLORECTAL CANCER - The present invention relates to the field of cancer. More specifically, the present invention relates to the use of biomarkers to detect colorectal cancer. In one aspect, the present invention provides methods for qualifying colorectal cancer status including, but not limited to, diagnosis, prognosis, and risk stratification, in patients. In one embodiment, a method for diagnosing colorectal cancer (CRC) in a patient comprises the steps of (a) collecting a sample from the patient; (b) measuring the methylation levels of one or more biomarkers in the sample collected from the patient; and (c) comparing the methylation levels of the one or more biomarkers with predefined methylation levels of the same biomarkers that correlate to a patient having CRC and predefined methylation levels of the same biomarkers that correlate to a patient not having CRC, wherein a correlation to one of the predefined methylation levels provides the diagnosis. | 10-31-2013 |
20140322354 | TISSUE & BLOOD-BASED MIRNA BIOMARKERS FOR THE DIAGNOSIS, PROGNOSIS AND METASTASIS-PREDICTIVE POTENTIAL IN COLORECTAL CANCER - Methods and compositions for the diagnosis, prognosis and classification of cancer, especially colorectal cancer, are provided. For example, in certain aspects methods for cancer prognosis using expression or methylation analysis of selected biomarkers are described. Particular aspects of the present invention may include methods and biomarkers for diagnosing or detecting colorectal cancer or metastasis in a subject by measuring a level of expression of biomarker miRNA such as miR-885-5p in the sample from the subject and evaluating the risk of developing cancer or metastasis in the subject. | 10-30-2014 |
20150072341 | IDENTIFICATION OF METASTASIS-SPECIFIC MIRNA AND HYPOMETHYLATION SIGNATURES IN HUMAN COLORECTAL CANCER - The present invention includes methods and biomarkers for diagnosing or detecting colorectal cancer metastasis in a human subject by comparing the Alu repeat methylation level in the biological sample to an Alu repeat methylation control level from a normal non-cancerous sample from the human subject, wherein a decrease in the Alu repeat methylation level is indicative of colorectal cancer and colorectal cancer metastasis. The invention also includes methods and biomarkers for diagnosing or detecting colorectal cancer (CRC) metastasis in a human subject by determining a level of expression of let-7i, miR-10b, miR-320a, and miR-221 in the sample from the one or more biological samples; and comparing the level of expression of let-7i, miR-10b, miR-320a, and miR-221 in the sample with the level of expression of let-7i, miR-10b, miR-320a, and miR-221 from normal colorectal tissue, wherein high expression of at least on of let-7i or miR-320a is indicative of a good prognosis for the CRC, while the low expression of at least one of miR-10b or miR-221 is indicative of a good prognosis for the CRC or CRC metastasis. | 03-12-2015 |
Patent application number | Description | Published |
20090006549 | SYSTEM AND METHOD FOR PROVIDING A COMMUNITY PORTAL FOR CHAT-BASED SUPPORT SERVICES - An approach is disclosed for providing a community portal for chat-based support services. Chat sessions corresponding to customer support service are established among multiple users and one or more agents. A community of the users is created during the chat sessions. | 01-01-2009 |
20090006550 | SYSTEM AND METHOD FOR PROVIDING AGENT MANAGED SUPPORT VIA INSTANT MESSAGING - An approach is disclosed for providing a managed chat session. An agent establishes a chat session with a user for customer support. Information from the user is received via the chat session, wherein the information is used to determine customized content to be presented to the user over the chat session for duration of the chat session. | 01-01-2009 |
20100296641 | SYSTEM AND METHOD FOR PROVIDING CHAT-BASED CRISIS MANAGEMENT SERVICES - An approach is provided for chat-based crisis management services. A crisis situation is recognized based on one or more events. Individuals needed for crisis management are identified and a bridge communication channel for a plurality of the identified individuals is facilitated. Data is shared among the identified individuals that participate in a chat session on the bridged communication channel. Dated exchanged among the participants is stored during the chat session. Access to the stored chat data is provided to the participants. | 11-25-2010 |
20100316213 | SYSTEM AND METHOD FOR PROVIDING INSTANT COMMUNICATION BASED CUSTOMER SUPPORT SERVICES USING VOICE RECOGNITION - An approach is provided for managed instant communication (or chat)-based customer support services. Data communication is received, at a customer service platform, from a customer requesting assistance. An instant communication session is established between the customer and an agent at the customer service platform. Speech-to-text conversion operation is activated for the agent, wherein the agent corresponds during the instant communication session by speech. Agent speech correspondence is converted during the instant communication session to text data. Agent correspondence is transmitted to the customer as text data. | 12-16-2010 |
Patent application number | Description | Published |
20100163845 | Tunnel field effect transistor and method of manufacturing same - A TFET includes a source region ( | 07-01-2010 |
20110147798 | CONDUCTIVITY IMPROVEMENTS FOR III-V SEMICONDUCTOR DEVICES - Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement includes an anneal of a metal/Si, Ge or SiliconGermanium/III-V stack to form a metal-Silicon, metal-Germanium or metal-SiliconGermanium layer over a Si and/or Germanium doped III-V layer. Then, removing the metal layer and forming a source/drain electrode on the metal-Silicon, metal-Germanium or metal-SiliconGermanium layer. A third improvement includes forming a layer of a Group IV and/or Group VI element over a III-V channel layer, and, annealing to dope the III-V channel layer with Group IV and/or Group VI species. A fourth improvement includes a passivation and/or dipole layer formed over an access region of a III-V device. | 06-23-2011 |
20110315960 | TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SAME - A TFET includes a source region ( | 12-29-2011 |
20140084246 | SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING PARASITIC LEAKAGE BARRIER LAYER - Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack. | 03-27-2014 |
20140091308 | SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS & ENHANCEMENT MODE OPERATION - Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation. | 04-03-2014 |
20140091360 | TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S) - Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer. | 04-03-2014 |
20140175378 | EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE - An embodiment includes depositing a material onto a substrate where the material includes a different lattice constant than the substrate (e.g., III-V or IV epitaxial (EPI) material on a Si substrate). An embodiment includes an EPI layer formed within a trench having walls that narrow as the trench extends upwards. An embodiment includes an EPI layer formed within a trench using multiple growth temperatures. A defect barrier, formed in the EPI layer when the temperature changes, contains defects within the trench and below the defect barrier. The EPI layer above the defect barrier and within the trench is relatively defect free. An embodiment includes an EPI layer annealed within a trench to induce defect annihilation. An embodiment includes an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench). Other embodiments are described herein. | 06-26-2014 |
20140175509 | Lattice Mismatched Hetero-Epitaxial Film - An embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may include different materials to collectively form a hetero-epitaxial device having, for example, a Si and/or SiGe substrate and a III-V or IV film. The EPI film may be one of multiple EPI layers or films and the films may include different materials from one another and may directly contact one another. Further, the multiple EPI layers may be doped differently from another in terms of doping concentration and/or doping polarity. One embodiment includes creating a horizontally oriented hetero-epitaxial structure. Another embodiment includes a vertically oriented hetero-epitaxial structure. The hetero-epitaxial structures may include, for example, a bipolar junction transistor, heterojunction bipolar transistor, thyristor, and tunneling field effect transistor among others. Other embodiments are described herein. | 06-26-2014 |
20140175512 | Defect Transferred and Lattice Mismatched Epitaxial Film - An embodiment uses a very thin layer nanostructure (e.g., a Si or SiGe fin) as a template to grow a crystalline, non-lattice matched, epitaxial (EPI) layer. In one embodiment the volume ratio between the nanostructure and EPI layer is such that the EPI layer is thicker than the nanostructure. In some embodiments a very thin bridge layer is included between the nanostructure and EPI. An embodiment includes a CMOS device where EPI layers covering fins (or that once covered fins) are oppositely polarized from one another. An embodiment includes a CMOS device where an EPI layer covering a fin (or that once covered a fin) is oppositely polarized from a bridge layer covering a fin (or that once covered a fin). Thus, various embodiments are disclosed from transferring defects from an EPI layer to a nanostructure (that is left present or removed). Other embodiments are described herein. | 06-26-2014 |
20140291726 | TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S) - Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer. | 10-02-2014 |
Patent application number | Description | Published |
20100088142 | Bulk Material Ship Routing and Inventory Management Schedule Optimization - The present invention is a computational system to generate feasible marine transportation schedules given a proposed bulk material supply chain. The decision support tool will fulfill the objectives and scope defined above. The technology employed will require (a) the use of mathematical programming modeling techniques (mixed integer linear programming) to mathematically formulate the business problem, and (b) advanced proprietary solution methods to produce solutions satisfying all constraints of the mathematical model while optimizing an objective function. The decision support tool has the following capabilities: Read input data, Generate feasible bulk material ship Schedule, Evaluate bulk material ship Schedule with User-defined Objective Function, Allow Case comparison, Graphical user interface (GUI) for specifying input data and displaying results. | 04-08-2010 |
20100325075 | MARKOV DECISION PROCESS-BASED SUPPORT TOOL FOR RESERVOIR DEVELOPMENT PLANNING - A Markov decision process-based support tool for reservoir development planning can comprise a source of input data, an optimization model, a high fidelity model for simulating the reservoir, and one or more solution routines interfacing with the optimization model. The optimization model can consider unknown parameters having uncertainties directly within the optimization model. The model incorporates the flexibility that a decision-maker has in the real world and allows the decision-maker to adjust the decisions based on new information. The model can systematically address uncertain data, for example comprehensively or even taking all uncertain data into account. Accordingly, the optimization model can provide flexible or robust solutions that remain feasible over an uncertainty space. Once the reservoir model is optimized, final development plans may be generated. | 12-23-2010 |
20100332442 | STOCHASTIC PROGRAMMING-BASED DECISION SUPPORT TOOL FOR RESERVOIR DEVELOPMENT PLANNING - A stochastic programming-based decision support tool for reservoir development planning can comprise a source of input data, an optimization model, a high fidelity model for simulating the reservoir, and one or more solution routines interfacing with the optimization model. The optimization model can consider unknown parameters having uncertainties directly within the optimization model. The model incorporates the flexibility that a decision-maker has in the real world and allows the decision-maker to adjust the decisions based on new information. The model can systematically address uncertain data, for example comprehensively or even taking all uncertain data into account. Accordingly, the optimization model can provide flexible or robust solutions that remain feasible over an uncertainty space. Once the reservoir model is optimized, final development plans may be generated. | 12-30-2010 |
20110022363 | ROBUST OPTIMIZATION-BASED DECISION SUPPORT TOOL FOR RESERVOIR DEVELOPMENT PLANNING - A robust optimization-based decision support tool for reservoir development planning can comprise a source of input data, an optimization model, a high fidelity model for simulating the reservoir, and one or more solution routines interfacing with the optimization model. The optimization model can consider unknown parameters having uncertainties directly within the optimization model. The model can systematically address uncertain data, for example, comprehensively or even taking all uncertain data into account. Accordingly, the optimization model can provide flexible or robust optimization solutions that remain feasible over an uncertainty space. Once the reservoir model is optimized, final development plans may be generated. | 01-27-2011 |
20110238392 | Systems and Methods For Reservoir Development and Management Optimization - Systems and methods which implement surrogate (e.g., approximation) models to systematically reduce the parameter space in an optimization problem are shown. In certain embodiments, rigorous (e.g., higher fidelity) models are implemented with respect to the reduced parameter space provided by use of surrogate models to efficiently and more rapidly arrive at an optimized solution. Accordingly, certain embodiments build surrogate models of an actual simulation, and systematically reduce the number of design parameters used in the actual simulation to solve optimization problems using the actual simulation. A multi-stage method that facilitates optimization of decisions related to development planning and reservoir management may be provided. Iterative processing may be implemented with respect to a multi-stage optimization method. There may be uncertainty in various parameters, such as in reservoir parameters, which is taken into account according to certain embodiments. | 09-29-2011 |
20110307230 | Optimizing Reservoir Performance Under Uncertainty - One or more methods for optimizing reservoir development planning include a source of characterized input data, an optimization model, a baseline model for simulating the reservoir, a modified model, and one or more solution routines interfacing with the optimization model. The optimization model can consider unknown parameters having uncertainties directly within the optimization model. The modified model can systematically address uncertain data, for example comprehensively or even taking all uncertain data into account. Accordingly, the modified model is optimized to flexible or robust solutions. Final reservoir development plans are generated based on optimized model results. | 12-15-2011 |
20140310049 | METHOD OF GENERATING AN OPTIMIZED SHIP SCHEDULE TO DELIVER LIQUEFIED NATURAL GAS - A system and method is provided for generating an optimized ship schedule to deliver liquefied natural gas (LNG) from one or more LNG liquefaction terminals to one or more LNG regasification terminals using a fleet of ships. A plurality of optimization models model an LNG supply chain. The LNG supply chain includes the one or more LNG liquefaction terminals, the one or more LNG regasification terminals, and the fleet of ships. An input device accepts a plurality of inputs relevant to the LNG supply chain. The plurality of inputs are configured to be input into the optimization models. One or more solution algorithms are interfaced with the optimization models. A processor runs the optimization models using the interfaced solution algorithms to create an optimized ship schedule. Uncertainty is accounted for in the optimized ship schedule. An output device outputs the optimized ship schedule. | 10-16-2014 |
20140316839 | METHOD FOR GENERATING A LIQUEFIED NATURAL GAS SUPPLY CHAIN DESIGN - A method for generating an LNG supply chain design. An LNG supply chain is modeled using a plurality of optimization models. Input data relevant to the modeled LNG supply chain is accepted. The input data is input into the optimization models. One or more solution algorithms are interfaced with the optimization models. The optimization models are nm using the interfaced solution algorithms to create an optimized supply chain design. The optimized supply chain design is outputted. Uncertainty is accounted for in the input data. The size, number, and design of ships, the number of berths and storage capacity at each LNG regasification terminal and LNG liquefaction terminal, and any other design decisions are treated as variables in the plurality of optimization models. | 10-23-2014 |
20140324727 | METHOD OF SIMULATING SHIPPING OF LIQUEFIED NATURAL GAS - A method of simulating shipping of liquefied natural gas (LNG) is provided. An LNG supply chain is modeled with a plurality of decision-making modules. The plurality of decision-making modules are configured to capture behavior of various elements of the LNG supply chain. Data representing a current state of at least a portion of the LNG supply chain is entered into a computer-based simulation system. Optimization techniques are employed with the plurality of decision-making modules to prescribe operations decisions for each element of the LNG supply chain. A simulation of the LNG supply chain is run using the plurality of decision-making modules, the data, and the optimization techniques. An LNG shipping schedule is outputted. | 10-30-2014 |
20140344000 | SYSTEMS AND METHODS FOR VALUATION AND VALIDATION OF OPTIONS AND OPPORTUNITIES IN PLANNING AND OPERATIONS FOR A LIQUEFIED NATURAL GAS PROJECT OR PORTFOLIO OF PROJECTS - Systems and methods are provided for valuation and validation of options and opportunities in planning and operations for a liquefied natural gas project or portfolio of projects. The systems and methods use at least one of a supply chain design model, a shipping simulation model, a ship scheduling model, and an optionality planning model to make valuation and validation decisions. | 11-20-2014 |