Tsurumaru
Hideyuki Tsurumaru, Hiroshima JP
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20120186707 | METHOD FOR MANUFACTURING OF HIGH STRENGTH COLD ROLLED STEEL SHEET OF EXCELLENT PHOSPHATABILITY - A method for the manufacturing of high strength cold rolled steel sheets includes continuously annealing a cold rolled steel sheet that has a composition containing C: 0.05-0.3% mass, Si: 0.6-3.0% mass, Mn: 1.0-3.0% mass, P: 0.1% mass, S: ≦0.02% mass, Al: 0.01-1% mass, N: ≦0.01% mass, and Fe and inevitable impurities: balance, in a manner such that the cold rolled steel sheet is heated in a furnace using an oxidizing burner to a steel sheet temperature of ≧700° C., then soak-annealed in a reducing atmosphere furnace at 750-900° C., then cooled so the average cooling rate between 500° C. and 100° C. is ≧50° C./s. High-Si cold rolled steel sheets with high strength and good phosphatability while containing Si≧0.6% are obtained without controlling conditions so as to increase the dew point in the reducing atmosphere in the soaking furnace or to increase the vapor hydrogen partial pressure ratio. | 07-26-2012 |
Hitoshi Tsurumaru, Osaka JP
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20090197168 | STORAGE ELEMENT - There is provided a battery device having a high operating voltage and a low capacity degradation rate. The battery device comprising: a positive electrode having at least a positive electrode active material layer and a positive electrode collector; a negative electrode; a separator; and an organic electrolytic solution, wherein the positive electrode active material layer contains non-porous carbon having a specific surface area of 500 m | 08-06-2009 |
20120202111 | CARBON ACTIVE MATERIAL FOR BATTERY ELECTRODES - There is provided a battery device having a high operating voltage and a low capacity degradation rate. The battery device comprising: a positive electrode having at least a positive electrode active material layer and a positive electrode collector; a negative electrode; a separator; and an organic electrolytic solution, wherein the positive electrode active material layer contains non-porous carbon having a specific surface area of 500 m | 08-09-2012 |
Naoko Tsurumaru, Nagoya-Shi JP
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20120094302 | MARKER FOR INDENTIFYING VARIETY/LINE OF PLANT OF THE GENUS SACCHARUM AND THE USE THEREOF - It is an object of the present invention to provide a method for identifying the variety/line of a plant of the genus | 04-19-2012 |
Sayaka Tsurumaru, Kawasaki-Shi JP
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20150190565 | LIQUID SUPPLY DEVICE AND BIOLOGICAL CLEANING DEVICE - The purpose of the present invention is to provide a liquid supply device and biological cleaning device that, by supplying a sterile liquid including low-flow, low-pressure microbubbles, can dramatically increase cleaning effects and clean quickly and neatly without damaging a biological tissue. A liquid supply device | 07-09-2015 |
Takafumi Tsurumaru, Kagoshima JP
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20080238264 | Multi-Layer Piezoelectric Element and Method for Manufacturing the Same - The multi-layer piezoelectric element comprises a stack having an active portion constituted from at least one piezoelectric layer and a plurality of internal electrodes consisting of first and second internal electrodes placed one on another, the active portion being subjected to expansion and contraction in response to a voltage applied across the first internal electrode and the second internal electrode, and external electrodes formed on two side faces of the stack with one thereof being connected to the first internal electrode and the other connected to the second internal electrode, wherein each of the external electrodes is constituted from three or more layers including a first layer formed in contact with the side face of the stack and a second layer formed on the first layer, to provide a multi-layer piezoelectric element having high durability. | 10-02-2008 |
20090220765 | Method for Manufacturing Ceramic Member, and Ceramic Member, Gas Sensor Device, Fuel Cell Device, Multi-Layer Piezoelectric Device, Injection Apparatus and Fuel Injection System - A ceramic member in which the metal layers with high void ratio are sufficiently sintered to lower a residue of resin is produced. | 09-03-2009 |
20090295256 | Multilayer Piezoelectric Element and Injector Using the Same - In a multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers are stacked alternately, the plurality of metal layers include a plurality of low-filled metal layers having a lower filling rate of metal composing the metal layers than oppositely disposed metal layers adjacent to each other in a stacking direction. In a multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers are stacked alternately, the plurality of metal layers include a plurality of thin metal layers having a smaller thickness than oppositely disposed metal layers adjacent to each other in a stacking direction. In a multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers composed mainly of an alloy are stacked alternately, the plurality of metal layers include a plurality of high-ratio metal layers having a higher ratio of a component constituting the alloy than oppositely disposed metal layers adjacent to each other in a stacking direction. | 12-03-2009 |
20100032503 | Multilayer Piezoelectric Element and Injector Using the Same - In a multilayer piezoelectric element comprising a plurality of piezoelectric layers and a plurality of metal layers which are alternately stacked one upon another, the metal layers includes a plurality of high resistance metal layers having a higher electrical resistance than adjacent metal layers on the both sides. The high resistance metal layers are regularly arranged so as to interpose a plurality of different metal layers other than the high resistance metal layers. In another multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers are alternately stacked one upon another, at least one layer of the metal layers is formed by a plurality of partial metal layers disposed between the piezoelectric layers. | 02-11-2010 |
Takafumi Tsurumaru, Kirishima-Shi JP
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20130161421 | Multilayer Piezoelectric Element and Injector Using the Same - A multilayer piezoelectric element includes a plurality of piezoelectric layers and a plurality of metal layers stacked alternately. The plurality of metal layers include a plurality of low-filled metal layers having a lower filling rate of metal composing the metal layers than oppositely disposed metal layers adjacent to each other in a stacking direction. The plurality of metal layers may include a plurality of thin metal layers having a smaller thickness than oppositely disposed metal layers adjacent to each other in a stacking direction. Where the plurality of metal layers are composed mainly of an alloy, the plurality of metal layers may include a plurality of high-ratio metal layers having a higher ratio of a component constituting the alloy than oppositely disposed metal layers adjacent to each other in a stacking direction. | 06-27-2013 |
20130168465 | Multilayer Piezoelectric Element and Injector Using the Same - A multilayer piezoelectric element includes a plurality of piezoelectric layers and a plurality of metal layers stacked alternately. The plurality of metal layers include a plurality of low-filled metal layers having a lower filling rate of metal composing the metal layers than oppositely disposed metal layers adjacent to each other in a stacking direction. The plurality of metal layers may include a plurality of thin metal layers having a smaller thickness than oppositely disposed metal layers adjacent to each other in a stacking direction. Where the plurality of metal layers are composed mainly of an alloy, the plurality of metal layers may include a plurality of high-ratio metal layers having a higher ratio of a component constituting the alloy than oppositely disposed metal layers adjacent to each other in a stacking direction. | 07-04-2013 |
Takanori Tsurumaru, Tokyo JP
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20090293803 | Method of growing silicon single crystals - By providing a length of not less than 100 mm to a tail portion to be formed following the cylindrical body portion in growing silicon single crystals having a cylindrical body portion with a diameter of 450 mm using the CZ method, it becomes possible to inhibit the occurrence of dislocations in the tail portion and thus achieve improvements in yield and productivity. A transverse magnetic field having an intensity of not less than 0.1 T is preferably applied on the occasion of formation of that tail portion. | 12-03-2009 |