Patent application number | Description | Published |
20100087737 | ULTRASOUND IMAGING APPARATUS AND METHOD FOR GENERATING ULTRASOUND IMAGE - A bias gate part supplies a bias current to a transmission pulse generator. The transmission pulse generator receives the supply 6of the bias current, amplifies an input voltage, and supplies an output voltage obtained by the amplification to array transducer elements. In accordance with the timing of transmitting ultrasound waves from the array transducer elements and the level of the output voltage supplied to the array transducer elements, the bias gate part supplies the bias current to the transmission pulse generator while changing the timing of supplying the bias current. | 04-08-2010 |
20130338499 | ULTRASOUND DIAGNOSIS APPARATUS - Saturation of received signals and generation of artifacts that are associated with tap concentration are prevented from occurring even if the differences in the delay amount between each of transducers are small. The ultrasound diagnosis apparatus comprises a plurality of ultrasound transducers, a plurality of taps, a delay amount calculator, a channel distributor, and a delay processor. The delay amount calculator calculates a first delay amount. The channel distributor specifies the minimum delay amount and the maximum delay amount from the first delay amount. Further, the channel distributor divides the range from the minimum delay amount to the maximum delay amount by the number of taps, and relates each to a tap. The channel distributor also inputs a signal output from an ultrasound transducer to the tap related to the divided range including the corresponding first delay amount. The delay processor relates the tap to a previously set second delay amount, and conducts delay processing on the signal input in each of the taps based on the related second delay amount. | 12-19-2013 |
20140307521 | ULTRASOUND DIAGNOSIS APPARATUS AND POWER SUPPLY - An ultrasound diagnosis apparatus in comprising a transformer, a first power source and a second power source, an ultrasound transducer, a processor, and a driving part. The transformer comprises a primary winding and a secondary winding. The first power source and the second power source are connected to the primary winding. The ultrasound transducer is driven by the voltage induced to the secondary winding, and transmits ultrasound waves to a subject, and receives reflected waves reflected by the subject to output the received signal. The processor implements processing on the received signal to generate ultrasound wave images. The driving part drives to change the voltage among a first level voltage based on the first power source, a second level voltage based on the second power source, and a third level voltage between the first level voltage and the second level voltage. | 10-16-2014 |
Patent application number | Description | Published |
20080277670 | SiC crystal and semiconductor device - The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×10 | 11-13-2008 |
20090065763 | LIGHT-EMITTING SEMICONDUCTOR DEVICE - The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode. | 03-12-2009 |
20090166674 | Ultraviolet light receiving element - In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band | 07-02-2009 |
20100006871 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE LIGHT EMITTING DEVICE - A light emitting device that has a radiant efficiency that does not decline in use, enables luminous flux to be increased by a high electric current, and produces white light with good color rendering and a method for producing a light emitting device capable of smoothly transmitting heat generated by LED elements to a carrier substrate. The radiation emitting device has first LED elements for emitting UV radiation, second LED elements for emitting visible light, a substrate made of an inorganic material and which carries the first LED elements and the second LED elements, a body made of inorganic material containing the first LED elements, the second LED elements and the substrate, and an SiC fluorescent screen that is doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements. | 01-14-2010 |
20100007267 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE LIGHT EMITTING DEVICE - To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and white light of good color rendering to be produced, and heat generated by the LED elements to be smoothly transmitted to an SiC fluorescent substrate. The light emitting device is provided with first LED elements for emitting UV radiation, second LED elements for emitting visible light, an SiC fluorescent substrate that is mounted with the first LED elements and the second LED elements and is made of SiC doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements, and has a body made of inorganic material. | 01-14-2010 |
20150091039 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face to which light emitted from the light emitting layer is incident, and convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light. The diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction. The semiconductor stack part is formed on the diffractive face. The convex portions or the concave portions include a side surface and a curved portion which curves and extends to a center side of the convex portions or the concave portions from an upper end of the side surface. | 04-02-2015 |