Patent application number | Description | Published |
20100087023 | LASER BEAM MACHINING METHOD AND LASER BEAM MACHINING APPARATUS - A laser beam machining method wherein machining areas in which to form machined grooves and machining start point areas in which to form shallow grooves shallower than the machined grooves are alternately set in each of streets formed on a wafer, and the machined grooves and the shallow grooves are continuously formed by scanning an irradiation point of a laser beam along each of the streets. | 04-08-2010 |
20110159621 | MANUFACTURING METHOD FOR LIGHT EMITTING DEVICE - A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing laser processing for the sapphire substrate layer and next applying an external force to a processed locus formed along each division line by the above laser processing to thereby divide the light emitting device wafer into a plurality of light emitting devices. The sapphire layer of each light emitting device has side surfaces whose horizontal sectional shape is a corrugated shape. Accordingly, the number of total reflections on the side surfaces of the sapphire layer can be reduced to thereby achieve efficient emergence of light from the sapphire layer. | 06-30-2011 |
20120309168 | LASER BEAM PROCESSING METHOD FOR A WAFER - A processing method for a wafer which has, on a surface thereof, a device region in which a plurality of devices are formed and partitioned by division lines and an outer periphery excess region surrounding the device region, includes a dividing groove formation step of irradiating a laser beam of a wavelength having absorbability by a wafer along the division lines to form dividing grooves serving as start points of cutting, and a dividing step of applying external force to the wafer on which the dividing grooves are formed to cut the wafer into the individual devices. At the dividing groove formation step, the dividing grooves are formed along the division lines in the device region while a non-processed region is left in the outer periphery excess region on extension lines of the division lines. | 12-06-2012 |
20120309169 | LASER PROCESSING METHOD FOR WAFER - A processing method for a wafer on which a plurality of devices are formed and partitioned by scheduled division lines includes a dividing groove by irradiating a laser beam of a wavelength to which the wafer has absorbency along the scheduled division lines to form dividing grooves which are to be used as start points of division. An external force divides the wafer into individual devices. The dividing grooves are formed by irradiating a laser beam of a first energy which is comparatively low upon a selected scheduled division line to form a first dividing groove which is to be used as a start point of division, and irradiating another laser beam of a second energy which is higher than the first energy upon scheduled division lines other than the selected scheduled division line to form second dividing grooves which are to be used as start points of division. | 12-06-2012 |
Patent application number | Description | Published |
20130323758 | MEASUREMENT DEVICE AND MEASUREMENT METHOD - A measurement device that includes a plurality of lines for conveying a reaction container containing a sample and measures a predetermined material included in the sample while conveying the reaction container by the plurality of lines, wherein the plurality of lines include: a first reaction line for conveying a reaction container at a first convey speed; a second reaction line for conveying a reaction container at a second convey speed; and a measurement line for measuring a predetermined material included in a sample reacted with a reagent within the reaction container in the first reaction line and a sample reacted with a reagent within the reaction container in the second reaction line, the measurement line conveying the reaction containers at a third convey speed that is higher than the first convey speed and the second convey speed. | 12-05-2013 |
20140106543 | LASER PROCESSING METHOD FOR WAFER - A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The wafer has a substrate, a functional layer formed on the front side of the substrate, and a film formed on the back side of the substrate. The method includes a modified layer forming step of applying a laser beam having a wavelength transmitting through the substrate and the functional layer and reflecting on the film along the division lines from the side of the functional layer. The laser beam is first focused at a virtual point set outside the substrate beyond the film and is reflected on the film to focus the beam inside the substrate, thereby forming a modified layer inside the substrate along each division line. | 04-17-2014 |
20140299586 | LASER MACHINING APPARATUS - A laser machining apparatus that includes an interferometric height position detection unit, a condensing point position adjustment unit, and a confocal optical height position detection unit. A controller of the laser machining apparatus specifies, as a correction value, the difference between the two height positions of the upper face of the workpiece, one detected by the confocal optical height position detection unit and the other detected by the interferometric height position detection unit. The controller controls the condensing point position adjustment unit based on the height position obtained by correcting the height position of the upper face of the workpiece detected by the interferometric height position detection unit using the correction value. | 10-09-2014 |
20140322847 | WAFER PROCESSING METHOD - A wafer processing method including a modified layer forming step of applying a laser beam having a transmission wavelength to a substrate from the back side of the substrate along division lines. The modified layer forming step includes the steps of making the polarization plane of linearly polarized light of the laser beam parallel to the direction perpendicular to each division line, shifting the beam center of the laser beam from the optical axis of a focusing lens of a focusing unit for focusing the laser beam, in the direction perpendicular to each division line, and shifting the focal point of the laser beam by the focusing lens in the same direction as the direction where the beam center of the laser beam has been shifted. | 10-30-2014 |