Patent application number | Description | Published |
20080213988 | SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD - A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed. | 09-04-2008 |
20090190908 | APPARATUS FOR HEAT-TREATING SUBSTRATE AND METHOD FOR HEAT-TREATING SUBSTRATE - In an apparatus for heat-treating a substrate, a substrate holder unit including a substrate stage which is made of carbon or a carbon-covered material having high radiation ratio is arranged in a vacuum chamber to be vertically movable. A heating unit including a heat dissipation surface which opposes the substrate stage is provided above the substrate stage in the vacuum chamber. The substrate stage is moved close to the heat dissipation surface to heat the substrate in noncontact with it with radiation heat from the heat dissipation surface. The substrate holder unit includes a radiation plate and a reflection plate. | 07-30-2009 |
20090191724 | Substrate Heating Apparatus, Heating Method, and Semiconductor Device Manufacturing Method - A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions. | 07-30-2009 |
20090218579 | SUBSTRATE HEATING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE - In a substrate heating apparatus, thermoelectrons generated by a filament ( | 09-03-2009 |
20100084392 | SUBSTRATE SUPPORTING/TRANSFERRING TRAY - To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed. The substrate supporting/transferring tray, which has the disc-shaped substrate supporting part on an upper plane side, and is provided with a cylindrical side wall part extending from a periphery of the disc-shaped substrate supporting part to a lower side, and an annular part extending from a lower end side of the cylindrical side wall part to an outer side in a diameter direction. | 04-08-2010 |
20100226630 | APPARATUS FOR HEAT-TREATING SUBSTRATE AND SUBSTRATE MANUFACTURING METHOD - In a substrate annealing apparatus, a substrate holder unit including a substrate stage made of carbon with a high emissivity or a material coated with carbon is accommodated in a vacuum chamber to be liftable. Also, a heating unit having a heat radiating surface facing the substrate stage is disposed above the substrate holder unit within the vacuum chamber. The substrate annealing apparatus brings the substrate stage close to the heat radiating surface so that a substrate mounted on the substrate stage can be heated by radiant heat from the heat radiating surface while the heat radiating surface is not in contact with the substrate. The substrate holder unit includes a radiating plate and a reflecting plate made of one of a metal carbide, a metal nitride, and a nickel alloy. | 09-09-2010 |
20100243618 | TEMPERATURE CONTROL METHOD FOR HEATING APPARATUS - A temperature control method for a heating apparatus including a chamber which can be evacuated and has a conductive portion, a filament which is positioned in the chamber, a first power supply which supplies a current to the filament, a second power supply which applies, to the filament, a voltage for acceleration to the chamber, an ammeter which measures a current of the filament, and a voltmeter which measures the acceleration voltage, the method comprises a first step of evacuating an interior of the chamber; a second step of supplying the filament current from the first power supply to the filament after the first step; a third step of applying the acceleration voltage to the filament after the second step; and a fourth step of controlling the acceleration voltage to keep a surface temperature of the chamber to be lower than a temperature of the filament after the third step while keeping constant the filament current from the first power supply. | 09-30-2010 |
20110117753 | HEAT TREATMENT APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A heat treatment apparatus including a vacuum vessel, a substrate stage which holds a substrate mounted on it, a heating unit for heating the substrate, and an exhaust unit for evacuating the vacuum vessel includes a first reflector which covers the upper portion of the exhaust port of the exhaust unit while being spaced apart from the exhaust port, and a second reflector which surrounds the exhaust port. At least one of reflector members which form the second reflector faces a direction defined from the heating unit to the exhaust port. | 05-19-2011 |
Patent application number | Description | Published |
20090321412 | VACUUM HEATING APPARATUS - Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus | 12-31-2009 |
20100025695 | ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H | 02-04-2010 |
20100111512 | HEATING PROCESS APPARATUS - An object of the present invention is to provide a heating process apparatus capable of being controlled to a constant temperature and to temperatures in a high-temperature range higher than or equal to a 1850 degrees. A heating process apparatus includes: a process chamber; a heat-processed object support member provided in the process chamber; a heater provided inside the heat-processed object support member; and temperature measuring means for measuring the temperature of the heat-processed object support member; wherein the temperature measuring means is provided outside a transmissive window provided in a peripheral wall of the process chamber and through which infrared energy radiated from the heat-processed object support member can be transmitted; and the temperature measuring means comprises a collector collecting infrared energy radiated from the heat-processed object support member and a calculating unit calculating temperature based on the ratio between the intensities of two wavelengths in the infrared. | 05-06-2010 |
20100151695 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE ANNEALING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage. | 06-17-2010 |
20110121317 | ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H | 05-26-2011 |
20120070968 | SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING CRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE - The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate ( | 03-22-2012 |
20120219921 | TEMPERATURE CONTROL METHOD FOR SUBSTRATE HEAT TREATMENT APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, TEMPERATURE CONTROL PROGRAM FOR SUBSTRATE HEAT TREATMENT APPARATUS, AND RECORDING MEDIUM - The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. | 08-30-2012 |
20130109109 | SUBSTRATE HEAT TREATING APPARATUS, TEMPERATURE CONTROL METHOD OF SUBSTRATE HEAT TREATING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, TEMPERATURE CONTROL PROGRAM OF SUBSTRATE HEAT TREATING APPARATUS, AND RECORDING MEDIUM | 05-02-2013 |
Patent application number | Description | Published |
20140308028 | SUBSTRATE HEAT TREATMENT APPARATUS - An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate. | 10-16-2014 |
20140338836 | ETCHING APPARATUS - An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate. | 11-20-2014 |