Patent application number | Description | Published |
20100227473 | Methods of Forming Metal Patterns in Openings in Semiconductor Devices - A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer. | 09-09-2010 |
20120164826 | Methods of Forming Metal Patterns in Openings in Semiconductor Devices - A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer. | 06-28-2012 |
20130020719 | MICROELECTRONIC DEVICES INCLUDING THROUGH SILICON VIA STRUCTURES HAVING POROUS LAYERS - A microelectronic device includes a substrate including a via hole extending therethrough, a porous layer on sidewalls of the via hole, and a conductive via electrode extending through the via hole between the sidewalls thereof. The porous layer includes a plurality of pores therein that reduce a dielectric constant of the porous layer. Related fabrication methods are also discussed. | 01-24-2013 |
20140080302 | METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including forming a first sacrificial layer on a substrate, the first sacrificial layer including a conductive material, forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer including an insulating material, patterning the second sacrificial layer and the first sacrificial layer to form an opening successively penetrating the second and first sacrificial layers, conformally forming a seed layer on the second and first sacrificial layers including the opening, and forming a conductive pattern filling the opening having the seed layer by a plating process. | 03-20-2014 |
20140203370 | Semiconductor Device and Fabricating Method Thereof - A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fin, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain. | 07-24-2014 |
Patent application number | Description | Published |
20100082948 | CHANNEL COMMAND WORD PRE-FETCHING APPARATUS - In a CCW fetching section, for each input/output device being a control objective, a result prediction table in which prediction values of status values to be returned from an input/output device as execution results of CCW commands, is referred to. Then, based on the prediction values, commands being pre-fetching objectives are pre-fetched from a CCW program stored in a memory, and transmitted to a CCW executing section. On the other hand, in the CCW executing section, the pre-fetched commands are sequentially executed, and the actual status values as the execution results are received from the input/output device. Then, when the received actual status values are not same as the predicted status values, success or failure in prediction is notified to the CCW fetching section, and also, the result prediction table is updated in the CCW fetching section. | 04-01-2010 |
20130046946 | STORAGE APPARATUS, CONTROL APPARATUS, AND DATA COPYING METHOD - A determining unit selects one storage device each from storage devices of an external storage apparatus and storage devices of a storage apparatus to which the determining unit belongs. At this point, based on a copy request, the determining unit preferentially selects, within each of the external storage apparatus and the storage apparatus, a storage device including a larger number of logical volumes (LVs) which belong to copy unexecuted LV pairs compared to other storage devices therein. Further, the determining unit determines, as a copy execution target, a copy unexecuted LV pair in which a LV provided in one of the selected two storage devices is a copy source and a LV provided in the other storage device is a copy destination. A copy unit copies data stored in the copy source LV, which belongs to the determined LV pair, to the copy destination LV of the LV pair. | 02-21-2013 |
20140095928 | STORAGE CONTROL APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH CONTROL PROGRAM - A storage control apparatus includes a detection unit that detects a soft error of a memory for setting information included in a programmable logic circuit, when the soft error is detected, a communication control unit that changes a state of a communication path between the communication device and an upper device to a busy state, and a recovery processing unit that performs recovery processing of the memory for setting information of the programmable logic circuit, thereby efficiently resolving a soft error of the programmable logic circuit. | 04-03-2014 |