Sasagawa, Kanagawa
Hideaki Sasagawa, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20100168200 | ANTIFUNGAL PHARMACEUTICAL COMPOSITION - Disclosed is an antifungal agent for external use, which is characterized by containing a compound represented by the general formula (1), 50 to 95 mass % of an alcohol such as ethanol, 0.1 to 35 mass % of water or the like, and 0.01 to 5 mass % of a cellulose thickening agent. X is a halogen or H. | 07-01-2010 |
20100173965 | ANTIFUNGAL COMPOSITION - Disclosed is a pharmaceutical composition for antifungal use, comprising: 1) one or more compounds selected from compounds represented by the general formula (1) below and physiologically acceptable salts thereof; 2) one or more compounds selected from polypropylene glycol, diesters of dibasic acids, triacetin, 2-ethyl-1,3-hexanediol, lauromacrogol, and polyoxyethylene-polyoxypropylene glycol; and 3) one or more compounds selected from glucono-δ-lactone, propylene glycol, glycerin, and lactic acid. General formula (1) (In the formula, X represents a halogen or hydrogen). | 07-08-2010 |
20100204293 | PHARMACEUTICAL COMPOSITION - Disclosed is an antifungal agent for external use, which is characterized by containing a compound represented by the general formula (1) below, 50-95% by mass of an alcohol, and 0.1-35% by mass of water and/or an anionic surfactant. | 08-12-2010 |
Misako Sasagawa, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20090040109 | Antenna Device and Wireless Communication Device Using the Same - An antenna device including a first Planar Inverted F Antenna (PIFA) operating at a first frequency and a second PIFA operating at a second frequency that is higher than the first frequency and disposed in a state in which it is insulated from the first PIFA. The antenna device has an antenna element in which a first short-circuit lead wire and a second short-circuit lead wire are coupled to a ground terminal provided on a substrate, a first feeding lead wire is coupled to a feeding terminal provided on a substrate via first matching circuit and a second feeding lead wire is coupled to a feeding terminal provided on the substrate via a second matching circuit. Thus, an antenna device which has a high degree of freedom for adjusting characteristics corresponding to a plurality of frequency bands can be realized. | 02-12-2009 |
20090140947 | Antenna Device and Radio-Communication System Using the Same - An antenna device comprising: a substrate; a ground conductor provided on the bottom surface of the substrate; a radiation conductor, with a partial cutout, provided on the top surface of the substrate; a ground terminal provided on the partial cutout of the radiation conductor; a conductor connecting the ground conductor with the ground terminal; and a feed terminal connected to the radiation conductor, wherein the ground terminal and the feed terminal are connected via an IC chip is provided. The configuration can realize an antenna device capable of feeding electric power through the IC chip, and of operating even on a metal plate fully well. A radio communication system using the antenna device is provided additionally. | 06-04-2009 |
Shigekazu Sasagawa, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20110051180 | MANAGEMENT DEVICE, MANAGEMENT METHOD AND COMPUTER READABLE MEDIUM - A management device includes a receiving unit, a judgment unit, a permission unit and a change unit. The permission unit permits the image forming device to perform a requested image forming processes, if the judgment unit judges that a number of image forming process which have been performed is within a first upper limit value. The change unit sets, if the number of image forming process which have been performed exceeds the first upper limit value through the requested and permitted image forming processes being performed, a second upper limit value used for limiting image forming processes at the next time based on an excess amount from the first upper limit value. | 03-03-2011 |
20120099143 | PRINTING AUTHENTICATION SYSTEM, PRINTING DEVICE, DEVICE MANAGEMENT APPARATUS AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - A printing authentication system includes an identification information storage unit, a providing unit and a specifying unit. The identification information storage unit stores, as an identification information set, plural pieces of user identification information given to a same user. If authentication is valid with regard to an authentication request accompanying specific user identification information, the providing unit reads out a specific user identification information set including the specific user identification information from the identification information storage unit and provides the specific user identification information set. If user identification information, associated with print data, of a requester who requests printing of the print data matches any one of the user identification information constituting the specific identification information set, the specifying unit specifies the print data as a printing target. | 04-26-2012 |
Shinya Sasagawa, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20080237875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer. | 10-02-2008 |
20100096637 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Off current of a thin film transistor is reduced, and on current of the thin film transistor is increased, and variation in electric characteristics is reduced. As a structure of semiconductor layers which form a channel formation region of a thin film transistor, a first semiconductor layer including a plurality of crystalline regions is provided on a gate insulating layer side; a second semiconductor layer having an amorphous structure is provided on a source region and drain region side; an insulating layer with a thickness small enough to allow carrier travel is provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is in contact with the gate insulating layer. The second semiconductor layer is provided on an opposite side to a face of the first semiconductor layer which is in contact with the gate insulating layer. | 04-22-2010 |