Madakasira, Louvain
Vijaraghavan Madakasira, Louvain BE
Patent application number | Description | Published |
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20100116656 | FLUID SEPARATION STRUCTURE AND A METHOD OF MANUFACTURING A FLUID SEPARATION STRUCTURE - An electrophoretic fluid separation structure ( | 05-13-2010 |
Vijayarachavan Madakasira, Louvain BE
Patent application number | Description | Published |
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20090212394 | BIPOLAR TRANSISTOR AND METHOD OF FABRICATING THE SAME - The invention provides a bipolar transistor with an improved performance because of a reduced collector series resistance and a reduced collector to substrate capacitance. The bipolar transistor includes a protrusion ( | 08-27-2009 |
Vijayaraghavan Madakasira, Louvain BE
Patent application number | Description | Published |
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20080237871 | Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained With Such a Method - The invention relates to a method of manufacturing a semiconductor device ( | 10-02-2008 |
20080277737 | Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained with Such a Method - The invention relates to a method of manufacturing a semiconductor device ( | 11-13-2008 |
20100230821 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 09-16-2010 |
20100253359 | ELECTRODE FOR AN IONIZATION CHAMBER AND METHOD PRODUCING THE SAME - An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate. | 10-07-2010 |
20100261339 | SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE - A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface. | 10-14-2010 |
20110018065 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is disclosed comprising providing an insulating carrier ( | 01-27-2011 |