Patent application number | Description | Published |
20080237870 | Semiconductor device - The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer. | 10-02-2008 |
20080296730 | Semiconductor device - A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion. | 12-04-2008 |
20080296772 | Semicondutor device - A semiconductor device according to the present invention includes: a lower wire having copper as a main component; an insulating film formed on the lower wire; an upper wire formed on the insulating film; a tungsten plug penetrating through the insulating film and formed of tungsten for electrically connecting the lower wire and the upper wire; and a barrier layer interposed between the lower wire and the tungsten plug; and the barrier layer including a tantalum film contacting the lower wire and a titanium nitride film contacting the tungsten plug. | 12-04-2008 |
20090072305 | Semiconductor device and method for manufacturing the same - A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface. | 03-19-2009 |
20090079086 | Semiconductor Device - A semiconductor device according to the present invention includes: a first interlayer dielectric film; a lower wire formed on the first interlayer dielectric film; a second interlayer dielectric film formed on the first interlayer dielectric film and the lower wire; and an upper wire formed on the second interlayer dielectric film to intersect with a prescribed portion of the lower wire in plan view. The first interlayer dielectric film is provided with a groove dug from the upper surface thereof in a region including the prescribed portion in plan view. The prescribed portion enters the groove. At least a portion of the second interlayer dielectric film formed on the lower wire has a planar upper surface. | 03-26-2009 |
20090102057 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof. | 04-23-2009 |
20100032837 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device according to the present invention includes: a semiconductor substrate; a first copper interconnection provided on the semiconductor substrate; an insulating layer provided over the first copper interconnection and having a hole extending therethrough to the first copper interconnection; a barrier layer composed of a tantalum-containing material and covering at least a sidewall of the hole and a part of the first copper interconnection exposed in the hole; and a second copper interconnection provided in intimate contact with the barrier layer and electrically connected to the first copper interconnection via the barrier layer; wherein the barrier layer has a nitrogen concentration profile such that the concentration of nitrogen contained in the material varies to be lower in a boundary portion of the barrier layer adjacent to the first copper interconnection and in a boundary portion of the barrier layer adjacent to the second copper interconnection and higher in an intermediate portion of the barrier layer defined between the boundary portions. | 02-11-2010 |
20100035428 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device according to the present invention includes: a groove forming step of forming a groove in an insulating layer made of an insulating material containing Si and O; an alloy film applying step of covering the side surface and the bottom surface of the groove with an alloy film made of an alloy material containing Cu and Mn by sputtering; a thinning step of reducing the thickness of a portion of the alloy film covering the bottom surface of the groove; a wire forming step of forming a Cu wire made of a metallic material mainly composed of Cu in the groove after the thinning step; and a barrier film forming step of forming a barrier film made of MnSiO between the Cu wire and the insulating layer by heat treatment. | 02-11-2010 |
20100078693 | Semiconductor device and method of manufacturing semiconductor device - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized. | 04-01-2010 |
20100078702 | Semiconductor storage device and method for manufacturing the same - A semiconductor storage device according to the present invention includes: a semiconductor substrate; an embedded insulator embedded in a trench formed in the semiconductor substrate and having an upper portion protruding above a top surface of the semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a floating gate formed on the first insulating film at a side of the embedded insulator, having a side portion arching out above the embedded insulator, and having a side surface made of a flat surface and a curved surface continuing below the flat surface; a second insulating film contacting an upper surface, the flat surface and the curved surface of the floating gate; and a control gate opposing the upper surface, the flat surface and the curved surface of the floating gate across the second insulating film. | 04-01-2010 |
20100078780 | Semiconductor device - A semiconductor device according to the present invention includes: a wiring; an interlayer insulating film formed over the wiring and having an opening reaching the wiring from a top surface thereof; an intra-opening metal film formed on the wiring inside the opening and made of a metal material that contains aluminum; a top surface metal film formed over the interlayer insulating film and made of the metal material; and a conduction securing film formed on a side surface of the opening to secure conduction between the intra-opening metal film and top surface metal film. | 04-01-2010 |
20100117232 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device according to the present invention includes a first insulating layer made of a material containing Si and O, a groove shaped by digging down the first insulating layer, an embedded body, embedded in the groove, made of a metallic material mainly composed of Cu, a second insulating layer, stacked on the first insulating layer and the embedded body, made of a material containing Si and O, and a barrier film, formed between the embedded body and each of the first insulating layer and the second insulating layer, made of Mn | 05-13-2010 |
20100190335 | Method of manufacturing semiconductor device - In a method of manufacturing a semiconductor device according to the present invention, a wiring trench is formed on the surface of an insulating film, and the inner surface of this wiring trench is thereafter coated with an alloy film made of an alloy material containing copper and a prescribed metallic element. After this coating with the alloy film, a copper film is laminated on the insulating film to fill up the wiring trench. Then, unnecessary portions of the copper film outside the wiring trench are removed, so that the surface of the copper film remaining in the wiring trench is generally flush with the surface of the insulating film. Thereafter heat treatment is performed. The prescribed metallic element is deposited on the wiring trench due to this heat treatment. Then, the prescribed metallic element deposited on the wiring trench is removed. | 07-29-2010 |
20100270686 | Semiconductor device - The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer. | 10-28-2010 |
20100283125 | Semiconductor device and method of manufacturing the same - The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode. | 11-11-2010 |
20110045669 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of covering the inner surface of the groove with a metal film made of MnO | 02-24-2011 |
20110169135 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR STORAGE DEVICE - A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing apart that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug. | 07-14-2011 |
20110215482 | Semiconductor device - The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof. | 09-08-2011 |
20120025302 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface. | 02-02-2012 |
20120108059 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of covering the inner surface of the groove with a metal film made of MnO | 05-03-2012 |
20120199942 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a lower wiring layer made of a conductive material; an upper wiring layer formed in an upper layer than the lower wiring layer; and a fuse film, at least a portion of the fuse film being formed in a plug formation layer in which a plug for connecting the lower wiring layer and the upper wiring layer is formed, and made of a conductive material including a metallic material other than copper. | 08-09-2012 |
20130300001 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof. | 11-14-2013 |
20140045308 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor storage device according to the present invention includes: a semiconductor substrate; an embedded insulator embedded in a trench formed in the semiconductor substrate and having an upper portion protruding above a top surface of the semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a floating gate formed on the first insulating film at a side of the embedded insulator, having a side portion arching out above the embedded insulator, and having a side surface made of a flat surface and a curved surface continuing below the flat surface; a second insulating film contacting an upper surface, the flat surface and the curved surface of the floating gate; and a control gate opposing the upper surface, the flat surface and the curved surface of the floating gate across the second insulating film. | 02-13-2014 |
20150035118 | SEMICONDUCTOR DEVICE INCLUDING AN ELECTRODE LOWER LAYER AND AN ELECTRODE UPPER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized. | 02-05-2015 |
20150054128 | SEMICONDUCTOR DEVICE INCLUDING AN ELECTRODE LOWER LAYER AND AN ELECTRODE UPPER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized. | 02-26-2015 |
20150061145 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer. | 03-05-2015 |