Patent application number | Description | Published |
20080237668 | METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; forming at least one bond pad region extending into the epitaxial layer to a surface of the insulator layer; fabricating at least one bond pad at least partially overlying the at least one bond pad region; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; fabricating a passivation layer substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component; bonding a handle wafer to the passivation layer; and etching through at least a portion of the insulator layer and at least a portion of the bond pad region to expose at least a portion of the at least one bond pad. | 10-02-2008 |
20080237762 | Method of Fabricating Back-Illuminated Imaging Sensors Using a Bump Bonding Technique - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads. | 10-02-2008 |
20090206377 | METHOD AND DEVICE FOR REDUCING CROSSTALK IN BACK ILLUMINATED IMAGERS - A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer. | 08-20-2009 |
20090256227 | METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS USING A BUMP BONDING TECHNIQUE - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads. | 10-15-2009 |
20090298260 | BACK-ILLUMINATED IMAGER USING ULTRA-THIN SILICON ON INSULATOR SUBSTRATES - A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer. At the completion of the growing of the epitaxial layer, there exists a net dopant concentration in the seed layer and the epitaxial layer which has maximum value at or near an interface between the seed layer and the insulator layer. | 12-03-2009 |
20100200944 | DARK CURRENT REDUCTION IN BACK-ILLUMINATED IMAGING SENSORS - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device. | 08-12-2010 |
20120190150 | DARK CURRENT REDUCTION IN BACK-ILLUMINATED IMAGING SENSORS - A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device. | 07-26-2012 |