Patent application number | Description | Published |
20100078727 | eFuse and Resistor Structures and Method for Forming Same in Active Region - A semiconductor fabrication process and apparatus are provided for forming passive devices, such as a fuse ( | 04-01-2010 |
20110012629 | REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE - After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state). | 01-20-2011 |
20110037128 | METHOD AND STRUCTURE FOR IMPROVING UNIFORMITY OF PASSIVE DEVICES IN METAL GATE TECHNOLOGY - Method of forming a semiconductor device which includes the steps of obtaining a semiconductor substrate having a logic region and an STI region; sequentially depositing layers of high K material, metal gate, first silicon and hardmask; removing the hardmask and first silicon layers from the logic region; applying a second layer of silicon on the semiconductor substrate such that the logic region has layers of high K material, metal gate and second silicon and the STI region has layers of high K material, metal gate, first silicon, hardmask and second silicon. There may also be a second hardmask layer between the metal gate layer and the first silicon layer in the STI region. There may also be a hardmask layer between the metal gate layer and the first silicon layer in the STI region but no hardmask layer between the first and second layers of silicon in the STI region. | 02-17-2011 |
20110042786 | INTEGRATION OF PASSIVE DEVICE STRUCTURES WITH METAL GATE LAYERS - A passive device structure includes an unpatterned metal gate layer formed in a passive device region of a semiconductor device; an insulator layer formed upon the unpatterned metal gate layer; a semiconductor layer formed upon the insulator layer; and one or more metal contact regions formed in the semiconductor layer; wherein the insulator layer prevents the metal gate layer as serving as a leakage current path for current flowing through a passive device defined by the semiconductor layer and the one or more metal contact regions. | 02-24-2011 |
20110049673 | Nanopillar Decoupling Capacitor - Techniques for incorporating nanotechnology into decoupling capacitor designs are provided. In one aspect, a decoupling capacitor is provided. The decoupling capacitor comprises a first electrode; an intermediate layer adjacent to the first electrode having a plurality of nanochannels therein; a conformal dielectric layer formed over the intermediate layer and lining the nanochannels; and a second electrode at least a portion of which is formed from an array of nanopillars that fill the nanochannels in the intermediate layer. Methods for fabricating the decoupling capacitor are also provided, as are semiconductor devices incorporating the decoupling capacitor design. | 03-03-2011 |
20110127637 | Nanopillar E-Fuse Structure and Process - Techniques for incorporating nanotechnology into electronic fuse (e-fuse) designs are provided. In one aspect, an e-fuse structure is provided. The e-fuse structure includes a first electrode; a dielectric layer on the first electrode having a plurality of nanochannels therein; an array of metal silicide nanopillars that fill the nanochannels in the dielectric layer, each nanopillar in the array serving as an e-fuse element; and a second electrode in contact with the array of metal silicide nanopillars opposite the first electrode. Methods for fabricating the e-fuse structure are also provided as are semiconductor devices incorporating the e-fuse structure. | 06-02-2011 |
20120249160 | REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE - After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state). | 10-04-2012 |
20120256294 | Nanopillar Decoupling Capacitor - Techniques for incorporating nanotechnology into decoupling capacitor designs are provided. In one aspect, a decoupling capacitor is provided. The decoupling capacitor comprises a first electrode; an intermediate layer adjacent to the first electrode having a plurality of nanochannels therein; a conformal dielectric layer formed over the intermediate layer and lining the nanochannels; and a second electrode at least a portion of which is formed from an array of nanopillars that fill the nanochannels in the intermediate layer. Methods for fabricating the decoupling capacitor are also provided, as are semiconductor devices incorporating the decoupling capacitor design. | 10-11-2012 |
20130048988 | Nanopillar E-Fuse Structure and Process - Techniques for incorporating nanotechnology into electronic fuse (e-fuse) designs are provided. In one aspect, an e-fuse structure is provided. The e-fuse structure includes a first electrode; a dielectric layer on the first electrode having a plurality of nanochannels therein; an array of metal silicide nanopillars that fill the nanochannels in the dielectric layer, each nanopillar in the array serving as an e-fuse element; and a second electrode in contact with the array of metal silicide nanopillars opposite the first electrode. Methods for fabricating the e-fuse structure are also provided as are semiconductor devices incorporating the e-fuse structure. | 02-28-2013 |
Patent application number | Description | Published |
20090321416 | ENHANCED ENERGY DELIVERY MECHANISM FOR BULK SPECIALTY GAS SUPPLY SYSTEMS - A system for delivering vapor phase fluid at an elevated pressure from a transport vessel containing liquefied or two-phase fluid is provided. The system includes: (a) a transport vessel positioned in a substantially horizontal position; (b) one or more energy delivery devices disposed on the lower portion of the transport vessel wherein the energy delivery devices include a heating means and a thermally conductive non-adhesive layer disposed therebetween to the gaps and provide substantially uniform energy to the transport vessel. | 12-31-2009 |
20100249972 | METHOD FOR CONFIGURING GAS SUPPLY FOR ELECTRONICS FABRICATION FACILITIES - A system for supplying a reagent to multiple tools in an electronics fabrication facility is configured using a demand probability distribution. In specific examples the reagent is a non-atmospheric or a specialty gas and the demand probability distribution is developed using Monte Carlo statistical techniques. | 09-30-2010 |
20100326537 | LOW VAPOR PRESSURE HIGH PURITY GAS DELIVERY SYSTEM - Systems, apparatuses and methods for vapor phase fluid delivery to a desired end use are provided, wherein the conditions of the system are monitored to determine when the water concentration or supply vessel surface temperature exceeds a specified value or when the low vapor pressure fluid pressure falls below a specified value for the purpose of removing a first supply vessel from service by discontinuing vapor flow from the first supply vessel and initiating vapor flow from a second supply vessel. | 12-30-2010 |
20110218254 | USING FOSSIL FUELS TO INCREASE BIOMASS-BASED FUEL BENEFITS - In the production of fuel such as ethanol from carbonaceous feed material such as biomass, a stream comprising hydrogen and carbon monoxide is added to the raw gas stream derived from the feed material, and the resulting combined stream is converted into fuel and a gaseous byproduct such as by a Fischer-Tropsch reaction. The gaseous byproduct may be utilized in the formation of the aforementioned stream comprising hydrogen and carbon monoxide. | 09-08-2011 |
20140047763 | USING FOSSIL FUELS TO INCREASE BIOMASS-BASED FUEL BENEFITS - In the production of fuel such as ethanol from carbonaceous feed material such as biomass, a stream comprising hydrogen and carbon monoxide is added to the raw gas stream derived from the feed material, and the resulting combined stream is converted into fuel and a gaseous byproduct such as by a Fischer-Tropsch reaction. The gaseous byproduct may be utilized in the formation of the aforementioned stream comprising hydrogen and carbon monoxide. | 02-20-2014 |
20140130509 | COMBINED GASIFICATION AND POWER GENERATION - A combined gasification and electric power generation method wherein between 30.0 and 60.0 percent of the compressed air required by an air separation unit supplying oxygen to a gasifier and nitrogen to gas turbine(s) is extracted from a compressor of the gas turbine(s). An installation, including the gas turbine(s), the air separation unit, a gasifier and a gas conditioning system for producing gas turbine fuel, has a design point of ambient temperature and pressure and net power output for producing the electric power required by a captive user. The gas turbine(s), at the design point, have a capacity to compress air from the compressor thereof, at a rate between 4.8 and 6.0 times the total molar flow rate of air required by the air separation unit and the compressor of the gas turbine(s) is operated at no less than 90.0 percent of its capacity at the design point. | 05-15-2014 |
20140148519 | HYBRID PLANT FOR LIQUID FUEL PRODUCTION - A hybrid plant and method for producing liquid fuel product from hydrogen and carbon monoxide containing streams produced by gasifying solid carbonaceous feedstock and steam reforming of light fossil fuels. When a gasification unit in the hybrid plant is operating at reduced capacity or is not operational, oxygen that would have been used in the gasification unit is diverted to a light fossil fuel conversion unit containing an autothermal reformer to increase H | 05-29-2014 |
20140319424 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS USING AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM WITH SECONDARY REFORMING - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system is disclosed that carries out a primary reforming process, a secondary reforming process. | 10-30-2014 |
20140319425 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM USING A COMBINED FEED STREAM - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements. | 10-30-2014 |
20140319426 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM THAT IS FREE OF METAL DUSTING CORROSION - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements and wherein the oxygen transport membrane based reforming system and associated synthesis production process equipment are substantially free of carbon formation and metal dusting corrosion. | 10-30-2014 |
20140319427 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM WITH RECYCLING OF THE PRODUCED SYNTHESIS GAS - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements and wherein the hydrogen containing stream is a recycled portion of the synthesis gas. | 10-30-2014 |
20140323597 | METHOD AND SYSTEM FOR PRODUCING METHANOL USING AN INTEGRATED OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM - A method and system for producing methanol that employs an integrated oxygen transport membrane based reforming system is disclosed. The integrated oxygen transport membrane based reforming system carries out a primary reforming process, a secondary reforming process, and synthesis gas conditioning to produce synthesis gas having a desired module of between about 2.0 and 2.2 for a methanol production process thereby optimizing the efficiency and productivity of the methanol plant. | 10-30-2014 |
20140323598 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS USING AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM WITH SECONDARY REFORMING AND AUXILIARY HEAT SOURCE - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system is disclosed that carries out a primary reforming process within a reforming reactor, and a secondary reforming process within an oxygen transport membrane reactor and in the presence of heat generated from a oxygen transport membrane reactor and an auxiliary source of heat. The auxiliary source of heat is disposed within the reactor housing proximate the reforming reactors and may include an auxiliary reactively driven oxygen transport membrane reactor or a ceramic burner. | 10-30-2014 |
20140323599 | METHOD AND SYSTEM FOR PRODUCING METHANOL USING AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM - A method and system for producing methanol that employs both an oxygen transport membrane (OTM) based reforming system together with a more traditional steam methane reforming (SMR) and/or autothermal (ATR) synthesis gas production system is disclosed. The dual mode system and method for producing the synthesis gas in a methanol production process optimizes the efficiency and productivity of the methanol plant by using the OTM based reforming system as an independent source of synthesis gas. The disclosed methods and systems are configurable either as a retrofit to existing methanol production facilities or as an integrated package into newly constructed methanol production facilities. | 10-30-2014 |