Patent application number | Description | Published |
20110095185 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 04-28-2011 |
20120070066 | CHARGED PARTICLE BEAM DEVICE AND EVALUATION METHOD USING THE CHARGED PARTICLE BEAM DEVICE - The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude. | 03-22-2012 |
20120186745 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus in which accuracy or reliability of processing is improved. This plasma processing apparatus includes a sample stage in a processing chamber arranged in a vacuum vessel and in which plasma is generated. The sample stage has a cylindrical shape and operates as an evaporator through which a refrigerant of a refrigerating cycle flows. Further, the apparatus includes refrigerant passages which are concentrically arranged inside of the sample stage, one or more detectors which detect vibrations of the sample stage, and an control unit which controls a temperature of the refrigerant flowing into the sample stage based on detection results of a dryness of the refrigerant flowing through the passages obtained from an output of the detectors. | 07-26-2012 |
20120261589 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 10-18-2012 |
20130327939 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 12-12-2013 |
20140004706 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 01-02-2014 |
20150031213 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein. | 01-29-2015 |
Patent application number | Description | Published |
20090152241 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed. | 06-18-2009 |
20100078130 | Plasma Processing Apparatus - A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. | 04-01-2010 |
20100263796 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements. | 10-21-2010 |
20110120649 | VACUUM PROCESSING APPARATUS - The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied. | 05-26-2011 |
20120273136 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring. | 11-01-2012 |
20140283534 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve. | 09-25-2014 |
20150262857 | Electrostatic Chuck Mechanism and Charged Particle Beam Apparatus - Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample. | 09-17-2015 |
Patent application number | Description | Published |
20080302302 | Substrate Processing System - Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product. | 12-11-2008 |
20090053906 | Semiconductor Device Producing Method and Substrate Processing Apparatus - Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber. | 02-26-2009 |
20090104792 | Semiconductor Device Producing Method - Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10 | 04-23-2009 |
20100186774 | CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%. | 07-29-2010 |
Patent application number | Description | Published |
20120073599 | APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE - A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state. | 03-29-2012 |
20130074873 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprising: a substrate holder which holds a substrate having a pattern formed in a surface of the substrate in a predetermined positional relationship with a reference indicator of the substrate; and a cleaner which abuts an adhesive member on the surface of the substrate which is held by the substrate holder and peels off the adhesive member along the surface of the substrate in a peeling direction which is not at right angle to a direction of the pattern, thereby cleaning the surface of the substrate. | 03-28-2013 |
20150255315 | APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE - A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state. | 09-10-2015 |
Patent application number | Description | Published |
20080254224 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole. | 10-16-2008 |
20090032067 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t | 02-05-2009 |
20090107400 | SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD - A gas injection head | 04-30-2009 |
20100313915 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS - The substrate cleaning method of and the substrate cleaning apparatus for removing contaminants such as particles adhering to a surface of a substrate attain a high throughput and effectively remove the particles and the like. To clean the back surface Wb of the substrate W, DIW cooled down to a temperature near its freezing point and cooling gas which is at a lower temperature than the freezing point of the DIW are discharged toward the center of the lower surface of the substrate which rotates. When thus cooled DIW flows along the back surface Wb of the substrate W, the particles and the like adhering to the substrate are removed. | 12-16-2010 |
20120090647 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 04-19-2012 |
20120175819 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - DIW in an excessively cooled state is supplied as a solidification liquid to a substrate W, and a solidified material of the DIW is formed by a landing impact on the substrate W. This makes the use of a gaseous refrigerant necessary to form a solidified material unnecessary, eliminates the need for a facility to generate the gaseous refrigerant, shortens a processing time and further enables running cost and the like to be suppressed. | 07-12-2012 |
20120186275 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A cooling gas discharge nozzle | 07-26-2012 |
20130167877 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, a liquid film of a supercooled liquid of pure water is formed on the upper surface of a substrate and then cooled with cooling gas into a frozen film. The temperature of the liquid film is lower than the freezing point of pure water, and thus the liquid film is in an easy-to-freeze state. Thus, the time required to freeze the liquid film can be shortened. Even if the temperature of the cooling gas is increased, the liquid film can be speedily frozen as compared with the case in which a liquid film is formed of pure water having a temperature higher than its freezing point. Thus, heat insulating facilities such as piping that supply cooling gas can be simplified. This results in a reduction of the cooling cost required to freeze the liquid film. | 07-04-2013 |
20140174483 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 06-26-2014 |
20150020850 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate W held horizontally; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid forming the liquid film to the liquid film; a thawing liquid discharge nozzle which discharges a thawing liquid to a frozen film formed by freezing the liquid film; a thawing liquid supplier which supplies the heated thawing liquid to the thawing liquid discharge nozzle via a pipe; and a receiver which receives the cooling gas and the thawing liquid respectively discharged from the cooling gas discharge nozzle and the thawing liquid discharge nozzle at the respective retracted position and guides the cooling gas and the thawing liquid to a common flow passage. | 01-22-2015 |
20150020852 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: an air flow generator which generates a down flow by gas flowing from top to bottom around a substrate W held horizontally; a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid to the liquid film and thereby freezes the liquid film; and a remover which removes a frozen film formed by freezing the liquid film from the substrate. The air flow generator reduces a flow velocity of the down flow when the cooling gas is discharged to the liquid film from the cooling gas discharge nozzle than when the liquid is supplied to the substrate from the liquid film former. | 01-22-2015 |
20150273537 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS - A method includes: a liquid film forming step of supplying first liquid to a first major surface of the substrate and forming a first liquid film; and a cleaning step of a cleaning step of cleaning the second major surface by providing the second major surface of the substrate with ultrasonic wave-applied liquid, which is obtained by applying ultrasonic waves to second liquid, in a condition that the first liquid film is formed on the first major surface. The first liquid has a lower cavitation intensity than the cavitation intensity of the second liquid, the cavitation intensity being stress per unit area which acts upon the substrate due to cavitations which are created during propagation of ultrasonic waves to liquid. | 10-01-2015 |
20160059274 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus, having a solidified material forming unit that discharges a solidification liquid in a liquid state from a nozzle and supplies the discharged solidification liquid to a substrate so as to form a solidified material of the solidification liquid on the substrate, and a remover that removes the solidified material of the solidification liquid on the substrate, wherein the solidified material forming unit supplies the solidification liquid having a solidification point higher than normal temperature to a top surface of the substrate, and the solidification liquid is solidified by an external stimulus received in either a process of landing on the substrate after being discharged from the nozzle, or a process of being left on the substrate as it is. | 03-03-2016 |
20160074913 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS - An ultrasonic wave applying liquid is supplied to one principal surface of a substrate while a liquid film of a first liquid being formed on another principal surface of the substrate. The ultrasonic wave applying liquid is obtained by applying ultrasonic waves to a second liquid. Ultrasonic vibration is transmitted to the other principal surface and the liquid film, thereby ultrasonically cleaning the other principal surface. The first liquid has a higher cavitation intensity, which is a stress per unit area acting on the substrate by cavitation caused in the liquid when ultrasonic waves are transmitted to the liquid present on the principal surface of the substrate, than the second liquid. | 03-17-2016 |
Patent application number | Description | Published |
20080290254 | IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY - An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period. | 11-27-2008 |
20080291307 | IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY - An imaging apparatus includes an electron emission array having electron sources arranged in matrix form, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film, wherein the control and drive circuit is further configured to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film in any one or more blanking periods excluding both a blanking period immediately following the given video signal output period and a blanking period immediately preceding a next video signal output period in which the one or more horizontal scan lines will be selected next time. | 11-27-2008 |
20080291308 | IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY - An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to control electron emission of the electron emission array in a blanking period in response to a signal level of the video signal produced in the given video signal output period. | 11-27-2008 |
Patent application number | Description | Published |
20090195891 | CAM MECHANISM OF A RETRACTABLE ZOOM LENS - A cam mechanism includes a cam ring having front and rear cam grooves which have a common reference cam diagram and are formed so that a front part of the front cam groove and a rear part of the rear cam groove are omitted from the reference cam diagram. A normal-width section and a wide-width section are provided in each of the front and rear cam grooves. In a zoom range, an associated cam follower of a driven member is engaged in the normal-width section of one of the front and rear cam grooves, and another associated cam follower of the driven member is positioned out of the other of the front and rear cam grooves. In a transition state between the zoom range and an accommodated position, both of the associated cam followers are positioned out of the normal-width sections of the respective front and rear cam grooves. | 08-06-2009 |
20100253800 | FOCUSING APPARATUS USING A PLASTIC LEAD SCREW - A focusing apparatus having a lead screw made of resin, both ends of which are supported by at least one stationary member to be freely rotatable, and a focusing lens group that is movable in an optical axis direction by rotation of the lead screw, the focusing apparatus includes a position detection sensor for detecting whether the focusing lens group is positioned at a reference position in the optical axis direction, and a focus detector which performs a focus-state detecting operation to detect a focus state of an object. The focusing apparatus moves the focusing lens group to a predetermined lens position in which the focus-state detecting operation is not performed, and the reference position is positioned in a close vicinity of the predetermined lens position. | 10-07-2010 |
20130088790 | LENS SUPPORT FRAME - A lens support frame includes an annular body portion; a large diameter lens holding groove on an inner peripheral surface of the body portion which is open on one side; a small diameter lens holding groove formed on an inner peripheral surface of the body portion and is open on the one side; and large-diameter-groove and small-diameter-groove lens-bonding depressions formed on inner peripheral surfaces of a large diameter lens holding groove and the small diameter lens holding groove, respectively, and allow an adhesive to be injected into the large-diameter-groove and small-diameter-groove lens-bonding depressions through end openings thereof on the one side, the end opening of the small-diameter-groove lens-bonding depression being communicatively connected with the large-diameter-groove lens-bonding depression. Circumferential positions of the large-diameter-groove and small-diameter-groove lens-bonding depressions are mutually different. | 04-11-2013 |
20130134814 | MOTOR SUPPORT STRUCTURE OF LENS BARREL - A motor support structure of a lens barrel in which a support member of the lens barrel supports a motor having a rotary shaft, includes a radial position limiter which limits a radial position of the motor with respect to the support member in radial directions orthogonal to the rotary shaft; an axial-position limiter which limits an axial position of the motor with respect to the support member in an axial direction of the rotary shaft when the motor is turned to a predetermined position about the rotary shaft with the radial position of the motor limited by the radial position limiter; and a rotation limiter which limits the turning of the motor about the rotary shaft at the predetermined position, at which the axial position of the motor is limited by the axial-position limiter. | 05-30-2013 |
20130176637 | LENS MOVING MECHANISM - A lens moving mechanism includes a guide shaft extending in an optical axis direction and a lens frame. The lens frame includes a transfer portion which follows movement of the nut member, which is screw-engaged with a lead screw of a motor. An effective length of the guide shaft is greater than that of the lead screw so that an end of the guide shaft and the motor overlap each other. Part of the fit-on portion of the lens frame is positioned where the end of the guide shaft and the motor overlap each other when the lens frame is at a lens-frame moving end, and is positioned to face the lead screw in a direction orthogonal to the optical axis when the lens frame is at the opposite lens-frame moving end. | 07-11-2013 |
Patent application number | Description | Published |
20100233044 | DESULFURIZATION-DENITRATION APPARATUS FOR EXHAUST GAS - Adsorbent dust can be recovered while spraying is prevented. An apparatus is provided with a desulfurization-denitration tower body and an adsorbent discharging device. An entrance louver and an exit louver are provided for forming a packed moving bed of an adsorbent that moves downward inside the tower body, the apparatus has a throttle portion provided with a side panel that is inclined so that a spacing gradually decreases toward a discharging device, the throttle portion being provided between the tower body and the discharging device, and first partitions are provided inside the throttle portion. A second partition extending along the incline direction of the side panel is provided at a predetermined distance from the bottom end of the exit louver above the side panel, and a gap is provided between the bottom end part of the exit louver and the side panel of the throttle portion. | 09-16-2010 |
20110206469 | LOCK HOPPER - The present invention relates to | 08-25-2011 |
20110315016 | DRY EXHAUST-GAS TREATING APPARATUS - An exhaust-gas treating apparatus, which includes an adsorption tower for removing various harmful substances in an exhaust gas using an adsorbent, a regeneration tower for releasing adsorbed substances from the adsorbent, a first transfer passage for transferring the adsorbent from the adsorption tower to the regeneration tower, a second transfer passage for transferring the adsorbent from the regeneration tower to the adsorption tower, a lock hopper connected to one end of the regeneration tower on a higher differential pressure side of a first differential pressure between an inside of the regeneration tower and an inside of the first transfer passage and a second differential pressure between the inside of the regeneration tower and an inside of the second transfer passage to thereby secure gas-tightness, a sealing unit connected to the other end of the regeneration tower on a lower differential pressure side to thereby secure gas-tightness, and an adjusting unit for maintaining the differential pressure in the sealing unit within a fixed range. | 12-29-2011 |
20110315017 | REGENERATION TOWER AND DRY APPARATUS FOR EXHAUST-GAS TREATMENT - A regeneration tower including a regeneration tower main body having a long trunk, and desorbed gas discharge passages through which a desorbed gas is discharged. The regeneration tower main body is configured so that a heating unit that heats an adsorbent, a separation part that separates desorbable substances as a desorbed gas from the heated adsorbent, and a cooling unit that cools the adsorbent from which the desorbable substances have been desorbed by heating are communicatively disposed in one direction and the heating unit and the cooling unit have approximately the same sectional outer diameter. | 12-29-2011 |
20120058017 | ADSORPTION TOWER OF DRY EXHAUST GAS TREATMENT DEVICE - An exhaust gas dry treatment device comprises an adsorption tower having: a box-shaped tower body; a plurality of reaction chambers have moving beds therein; a plurality of vertical partition plates which sequentially close between the end parts of the plurality of reaction chambers and between the end parts of the reaction chambers and the inner wall of the tower; an exhaust gas supply port allowing the inside of an inlet side wind box space which is formed in the tower body between the front tower wall and the reaction chamber end part to communicate with the inside of an exhaust gas supply duct; and an exhaust gas discharge port allowing the inside of an outlet side wind box space which is formed in the tower body between the rear tower wall and the reaction chamber end part to communicate with the inside of an exhaust gas discharge duct. | 03-08-2012 |
20120061206 | EQUIPTMENT FOR DISCHARGING A FIXED AMOUNT OF A PARTICULATE BODY - Fixed amount discharging equipment for simultaneously discharging a particulate body from a plurality of containers containing the particulate body, comprising a casing to the interior of which is provided a belt conveyor and having a particulate body discharge hole below the carrying direction end of the belt conveyor, and a plurality of supply arranged in the carrying direction of the belt conveyor and passing through the casing, lower ends thereof penetrating into the casing and being arranged above the belt of the belt conveyor, the lower ends of the supply pipes being such that the downstream sides thereof in the belt carrying direction have notches of a predetermined length from the end faces upward. | 03-15-2012 |
20140286715 | LOCK HOPPER - The present invention relates to | 09-25-2014 |
Patent application number | Description | Published |
20140322421 | METHOD FOR PRODUCING COOKED AND FROZEN PASTA - Cooked and frozen pastas which can be stored in a frozen state for a long time and which retain good appearance and texture comparable to freshly boiled fresh pastas even after being thawed are provided. A method for producing the cooked and frozen pastas, comprising the steps of boiling fresh pastas obtained by extruding dough into pasta noodles at a pressure of from 80 kgf/cm | 10-30-2014 |
20150110942 | FROZEN NOODLES AND PRODUCTION METHOD THEREFOR - Provided is a method for producing frozen noodles comprising: a step of attaching a composition comprising xanthan gum and having a viscosity of from 30 to 2000 mPa·s at 60° C. to cooked noodles obtained by cooking fresh noodles produced by a rolling noodle-manufacturing method; and a step of freezing the noodles to which the composition has attached. | 04-23-2015 |
20150118364 | FROZEN PASTA - Provided is a frozen pasta retaining an original flavor of the pasta. A frozen pasta attached with a ground pasta product and/or durum wheat flour. A process for producing a frozen pasta, comprising cooling a boiled pasta and attaching, to the surface of the pasta, a ground product of a pasta, followed by freezing. | 04-30-2015 |
20150125582 | METHOD FOR PRODUCING COOKED NOODLE - Provided is a cooked noodle capable of maintaining a good texture and good taste and flavor even after refrigerated or frozen-stored. A method for producing a cooked noodle, comprising allowing a liquid comprising 1.0 to 15.0% by mass of a sugar and 0.5 to 8.0% by mass of a starch to attach to a heat-cooked noodle. | 05-07-2015 |
20150140192 | PRODUCTION METHOD FOR FROZEN NOODLES AND COMPOSITION FOR PREVENTING FREEZER BURN - Provided is frozen noodles in which freezer burn is unlikely to occur. A method for producing frozen noodles comprises: a step of attaching a composition to cooked noodles, the composition comprising at least water, oil or fat and a polysaccharide thickener, and having a viscosity of from 30 to 2000 mPa·s at 60° C.; and a step of freezing the noodles to which the composition has attached. | 05-21-2015 |
20150237894 | PACKAGED FROZEN NOODLE FOR MICROWAVE COOKING - Provided are frozen noodles which can retain a favorable quality even after microwave thawing. Packaged frozen noodles for microwave cooking comprising a package having a ventilation hole or ventilation holes, wherein a total area of an opening of the ventilation hole or openings of the ventilation holes is 0.02 to 5 cm | 08-27-2015 |
20160106126 | METHOD FOR MANUFACTURING FROZEN COOKED NOODLES - Provided is frozen cooked noodles which can be stored in a frozen state for a long time and present satisfactory appearance and texture after defrosting. A method for manufacturing frozen cooked noodles comprising obtaining raw noodles by extruding dough containing from 0.5 to 5 parts by mass of a plant protein and 100 parts by mass of wheat flour containing 70 mass % or more of a regular wheat flour at a pressure of from 60 kgf/cm | 04-21-2016 |
Patent application number | Description | Published |
20080307483 | INFORMATION PROCESSING DEVICE, VIDEO PLAYBACK METHOD, PROGRAM, AND VIDEO PLAYBACK SYSTEM - A video playback system includes a video distribution server and at least one information processing device. The video distribution server includes a video distribution portion that performs streaming distribution of a video stream, an alternative video distribution portion that distributes an alternative video, and a control information distribution portion that distributes control information. The information processing device includes a receiving portion that receives the video stream, the alternative video, and the control information, a storage portion that stores the alternative video and the control information, a video stream playback portion that performs streaming playback of the video stream, an alternative video playback portion that plays back the stored alternative video, and a playback switching control portion that, based on the stored control information, controls switching between the streaming playback and the playback of the alternative video. | 12-11-2008 |
20140040049 | INFORMATION PROCESSING DEVICE, VIDEO PLAYBACK METHOD, PROGRAM, AND VIDEO PLAYBACK SYSTEM - A video playback system includes a video distribution server and at least one information processing device. The video distribution server includes a video distribution portion that performs streaming distribution of a video stream, an alternative video distribution portion that distributes an alternative video, and a control information distribution portion that distributes control information. The information processing device includes a receiving portion that receives the video stream, the alternative video, and the control information, a storage portion that stores the alternative video and the control information, a video stream playback portion that performs streaming playback of the video stream, an alternative video playback portion that plays back the stored alternative video, and a playback switching control portion that, based on the stored control information, controls switching between the streaming playback and the playback of the alternative video. | 02-06-2014 |