Patent application number | Description | Published |
20080237582 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF - A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode. | 10-02-2008 |
20080241990 | METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR SUBSTRATE - A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer. | 10-02-2008 |
20080283833 | Thin Film Transistor Array Panel and Manufacturing Method Thereof - The present invention provides a thin film transistor comprising: a substrate ( | 11-20-2008 |
20080284964 | LIQUID CRYSTAL DISPLAY AND A METHOD FOR FABRICATING THE SAME - A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates. | 11-20-2008 |
20080296566 | Making organic thin film transistor substrates for display devices - An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode. | 12-04-2008 |
20090072228 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURE - An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode. | 03-19-2009 |
20090096949 | THIN FILM TRANSISTOR ARRAY PANEL, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE WITH THE SAME - A thin film transistor array panel includes an insulating substrate, a first conductive layer disposed on the insulating substrate, an organic semiconductor disposed between the source electrode and the drain electrode, a gate insulating layer disposed on the organic semiconductor, and a second conductive layer disposed on the gate insulating layer. The first conductive layer includes a data line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and a pixel electrode connected to the drain electrode and formed of the same layer as the drain electrode, and the second conductive layer includes a gate line and a gate electrode connected to the gate line. | 04-16-2009 |
20090111211 | FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY - The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance. | 04-30-2009 |
20090128725 | LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME - A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates. | 05-21-2009 |
20090180044 | THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a gate line arranged on a substrate, a data line arranged to cross the gate line, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer forming a channel between the source electrode and the drain electrode, a pixel electrode connected to the drain electrode, and an organic passivation layer to protect the organic semiconductor layer and to receive a white light and transmit a colored light. | 07-16-2009 |
20090317942 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved. | 12-24-2009 |
20100006832 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening. | 01-14-2010 |
20100038647 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor. | 02-18-2010 |
20100051911 | Organic Thin Film Transistor Array Panel and Method of Manufacturing the Same - In an organic thin film transistor array panel includes a source electrode and a drain electrode having a double layer including a metal and a metal oxide. The organic thin film transistor array panel is formed through a lift-off process or by using a shadow mask. The thin film transistor array panel has excellent characteristics and reduced manufacturing process costs. | 03-04-2010 |
20100053485 | LIQUID CRYSTAL DISPLAY AND METHOD FOR FABRICATING THE SAME - A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates. | 03-04-2010 |
20100055611 | RESIST COMPOSITION AND METHOD FOR FORMING A PATTERN USING THE SAME - The present invention relates to a resist composition with a hardener and a solvent, and a method for forming a pattern using the resist composition. The hardener has a thermal-decomposable core part, and a first photosensitive bond art. The solvent has a low-molecular resin, and a second photosensitive bond part. | 03-04-2010 |
20100064920 | PRINT BOARD, METHOD FOR MANUFACTURING THE SAME, AND PRINTING METHOD USING THE SAME - The present invention relates to a print board that includes a substrate and a coating film that is formed on the substrate. The film includes an ink-philic portion and an ink-phobic portion disposed between adjacent ink-philic portions. The ink-phobic portion has more hydrophobicity than the ink-philic portion. | 03-18-2010 |
20100128190 | Liquid Crystal Display and Manufacturing Method of the Same - Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates. | 05-27-2010 |
20100197074 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURE - A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode. | 08-05-2010 |
20100216267 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF - A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode. | 08-26-2010 |
20100270553 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter. | 10-28-2010 |
20100276681 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure. | 11-04-2010 |
20100308326 | THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other. | 12-09-2010 |
20110014736 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity. | 01-20-2011 |
20110023736 | METHOD OF FORMING INK PATTERNS AND APPARATUS FOR PRINTING INK PATTERNS - A method of forming ink patterns and an apparatus for printing ink patterns capable of reducing the amount of wasted ink and enhancing the printing and positional precision of the shape of ink patterns on a member to be printed, are described herein. The method includes providing a first printing member including first concave portions formed by engraving patterns larger than final ink patterns, that are to be printed on a member, on the first printing member; filling the first concave portions of the first printing member with ink; transferring the ink filling the first concave portions of the first printing member onto a blanket cylinder to form intermediate ink patterns; providing a second printing member including second concave portions formed by engraving patterns equal in size to the final ink patterns that are to be printed on the member, on the second printing member; closely attaching the blanket cylinder having the intermediate patterns to the second printing member to remove ink on portions of the blanket cylinder that contact convex portions of the second printing member, from the blanket cylinder; and printing ink that remains on the blanket cylinder, on the member to form the final ink patterns. | 02-03-2011 |
20110037933 | LIQUID CRYSTAL DISPLAY INCLUDING A SPACER ELEMENT AND METHOD FOR FABRICATING THE SAME - A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates. | 02-17-2011 |
20110039363 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator. | 02-17-2011 |
20110053315 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR - An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer. | 03-03-2011 |
20110084260 | THIN FILM TRANSISTOR ARRAY PANEL USING ORGANIC SEMICONDUCTOR AND A METHOD FOR MANUFACTURING THE SAME - The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display. | 04-14-2011 |
20110096005 | TOUCH SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME - A touch substrate includes a base substrate, a common electrode and a wire electrode. The base substrate has a plurality of common electrode areas. A common electrode is disposed in each of the common electrode areas. The common electrode has a plurality of first electrode lines extended in a first direction and arranged in a second direction crossing the first direction and a plurality of second electrode lines arranged in the first direction. The wire electrode is connected to an end of the common electrode to apply a voltage to the common electrode. The common electrode and the wire electrode are simultaneously formed through a same process using a printing substrate. | 04-28-2011 |
20110140094 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer | 06-16-2011 |
20110233536 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other. | 09-29-2011 |
20110248255 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole. | 10-13-2011 |
20110254011 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer. | 10-20-2011 |
20110285952 | LIQUID CRYSTAL DISPLAY INCLUDING A SPACER ELEMENT AND METHOD FOR FABRICATING THE SAME - A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates. | 11-24-2011 |
20120003796 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME - An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride. | 01-05-2012 |
20120100649 | METHOD FOR MANUFACTURING A FILM STRUCTURE - Provided is a method for manufacturing a film structure. | 04-26-2012 |
20120120362 | THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel. | 05-17-2012 |
20120138965 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element. | 06-07-2012 |
20120184058 | LlQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter. | 07-19-2012 |
20120244667 | PRECURSOR COMPOSITION FOR OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. | 09-27-2012 |
20120326152 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING - A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode. | 12-27-2012 |
20130052763 | METHOD OF MANUFACTURING A NANO-ROD AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved. | 02-28-2013 |
20130056828 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon. | 03-07-2013 |
20130083266 | LIQUID CRYSTAL DISPLAY INCLUDING A SPACER ELEMENT AND METHOD FOR FABRICATING THE SAME - A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode electrically connected to the pixel electrode through a contact hole. A spacer is formed on the first signal line of the first insulating substrate, and is wider at a first portion close to the first insulating substrate than at a second portion close to the second insulating substrate, and the drain electrode comprises a first portion and a second portion extending in a different direction with respect to the first portion. | 04-04-2013 |
20130140562 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer. | 06-06-2013 |
20130171779 | COMPOSITION FOR MANUFACTURING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME - According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern. | 07-04-2013 |
20130234169 | METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE - In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper. | 09-12-2013 |
20130237011 | COMPOSITION FOR OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME - A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4. | 09-12-2013 |
20130248850 | THIN FILM TRANSISTOR, DISPLAY APPARATUS HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a source electrode, a drain electrode, a channel portion disposed between the source electrode and the drain electrode, and a gate electrode disposed on the channel portion and insulated from the channel portion. The source electrode, the drain electrode, and the channel portion are disposed on a same layer. A display apparatus includes a display device and the thin film transistor that applies a driving signal to the display device. | 09-26-2013 |
20130320327 | THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode. | 12-05-2013 |
20130328042 | PRECURSOR COMPOSITION OF OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR SUBSTRATE INCLUDING OXIDE SEMICONDUCTOR, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE INCLUDING OXIDE SEMICONDUCTOR - A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%. | 12-12-2013 |
20130328049 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode. | 12-12-2013 |
20140054591 | LIQUID CRYSTAL DISPLAY INCLUDING A VARIABLE WIDTH SPACER ELEMENT AND METHOD FOR FABRICATING THE SAME - A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode electrically connected to the pixel electrode through a contact hole. A spacer is formed on the first signal line of the first insulating substrate, and is wider at a first portion close to the first insulating substrate than at a second portion close to the second insulating substrate, and the drain electrode comprises a first portion and a second portion extending in a different direction with respect to the first portion. | 02-27-2014 |
20140377904 | PRECURSOR COMPOSITION OF OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING OXIDE SEMICONDUCTOR - A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio | 12-25-2014 |
20150036090 | LIQUID CRYSTAL DISPLAY - A liquid crystal display comprising: a substrate; a plurality of common voltage lines disposed on the substrate; an insulating layer disposed on the common voltage lines; and a common electrode and a plurality of pixel electrodes disposed on the insulating layer, the plurality of pixel electrodes constituting a plurality of pixel electrodes, respectively, wherein the insulating layer comprises a plurality of contact holes to expose at least part of the common voltage lines, and wherein two adjacent contact holes among the plurality of contact holes are spaced apart by at least one pixel therebetween. | 02-05-2015 |
20150044817 | THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode. | 02-12-2015 |
20150049276 | THIN FILM TRANSISTOR ARRAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes: gate lines; data lines insulated from and crossing the gate lines; and shorting bars disposed outside of a display area in which the gate lines cross the data lines. The shorting bars overlap portions of the data lines disposed outside of the display area. The shorting bar includes a semiconductor material. | 02-19-2015 |