June-Key
June-Key Chung, Seoul KR
Patent application number | Description | Published |
---|---|---|
20080299041 | HETEROCYCLIC INDENE DERIVATIVES AND THEIR RADIOISOTOPE LABELED COMPOUNDS FOR IMAGING BETA-AMYLOID DEPOSITION - The invention is directed to heterocyclic indene derivatives useful for β-amyloid plaque imaging, their radiolabeled compounds and their preparation methods. The compounds of the invention are easily labeled with radioisotopes and have high affinities to β-amyloid depositions, thus they facilitate diagnosis of Alzheimer's disease by imaging the distribution of β-amyloid depositions. | 12-04-2008 |
20110286920 | COMPLEX OF BIFUNCTIONAL CHELATING AGENT AND MANNOSYL HUMAN SERUM ALBUMIN - The present invention is about bifunctional chelating agents (BCA) conjugated mannosyl human serum albumin (MSA) and its radioisotope labeled compounds for imaging immune system such as macrophages, Kupffer cells, reticuloendothelial system (RES), and lymphatic system. The present invention comprises BCA-MSA conjugates, their radiolabeled compounds, and kits for radiolabeing. The present invention improved radiolabeling procedure, showed higher lymphatic system uptake, and enabled image by positron emission tomography (PET). | 11-24-2011 |
20120029177 | HETEROCYCLE-AMINO ACID DERIVATIVES FOR TARGETING CANCER TISSUE AND RADIOACTIVE OR NON-RADIOACTIVE LABELED COMPOUNDS THEREOF - The present invention relates to novel amino acid derivatives containing heterocyclic chelating residues thereof; radioactive or nonradioactive metal complexes thereof; methods for preparation thereof; and apyrogenic and sterile preparative kits of the composition for targeting cancer cells. | 02-02-2012 |
20130317196 | TRIAZANONANE DERIVATIVES OR PHARMACEUTICALLY ACCEPTABLE SALT THEREOF FOR ENHANCED FLUORINE-18 LABELING - The present invention relates to a triazanonane derivative indicated by the chemical formula 1 below, or a pharmaceutically acceptable salt thereof, and a method for preparing same, and the triazanonane derivative according to the present invention forms a complex with a metal-fluoride and displays an effect of increasing the labeling efficiency up to 78-90% when labeling F-18, thus enabling use in various radioactive medicine labeling | 11-28-2013 |
20140199235 | NANOPARTICLE COATED WITH LIGAND INTRODUCED WITH LONG HYDROPHOBIC CHAIN AND METHOD FOR PREPARING SAME - The present invention relates to a nanoparticle having a linker connected to a long alkane or alkene chain, and a method for preparing the nanoparticle. The alkyl chain of C | 07-17-2014 |
June-Key Lee, Yongin-City KR
Patent application number | Description | Published |
---|---|---|
20080237551 | Ferroelectric thin film and device including the same - A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi | 10-02-2008 |
20080293256 | Method for forming bismuth titanium silicon oxide thin film - A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film. | 11-27-2008 |
June-Key Lee, Seongnam-Si KR
Patent application number | Description | Published |
---|---|---|
20080283821 | Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof - Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern. | 11-20-2008 |