Patent application number | Description | Published |
20100165586 | DISPLAY PANEL APPARATUS - A display panel apparatus includes a panel, a fixed frame, a circuit board and one or more flexible printed circuits (FPC). The fixed frame may be a back bezel or a frame, and is placed at the rear of the panel. The fixed frame includes two fixed portions extending outwards from a side thereof. The circuit board is connected to the two fixed portions and disposed at the side of the fixed frame, and extends away from the fixed frame. The maximum plane of the circuit board and the maximum plane of the fixed frame are disposed at a same (common) plane. More specifically, the maximum plane of the circuit board and the maximum plane of the fixed frame are not overlapping in a vertical direction, and are on a same horizontal plane. | 07-01-2010 |
20110103093 | LIGHT SOURCE MODULE - A light source module includes a light bar and a stiffened bar. The light bar includes a flexible circuit strip and a plurality of light sources. The light sources are disposed on the flexible circuit strip along an extension direction of the flexible circuit strip. The stiffened bar overlaps the flexible circuit strip and is disposed on a face of the flexible circuit strip having the light sources. The stiffened bar surrounds at least one side of each light source and exposes the light sources. The rigidity of the stiffened bar is larger than the flexible circuit strip. | 05-05-2011 |
20110149191 | Backlight Module with Film Positioning Function and Display Device Using the Same - A backlight module includes a back plate, an optical sheet, and a lateral frame. The back plate has a first surface, wherein the first surface includes a raised portion formed near the edge of the first surface. An insertion opening is formed between the raised portion and the first surface. The optical sheet is disposed on the first surface, wherein a protrusion is formed at one end of the optical sheet to be inserted into the insertion opening. The lateral frame is disposed on the back plate and corresponds to the edge of the first surface. The lateral frame includes at least a side wall having a sinking portion formed at the bottom of the side wall, wherein the bottom of the side wall is disposed on the optical sheet while the raised portion is received in the sinking portion. | 06-23-2011 |
20120038846 | PROTECTION STRUCTURE - A flat panel display device includes a display panel, a backlight module, a printed circuit board and a protection structure. The backlight module is disposed on a non-display side of the display panel. The printed circuit board with a signal connector is connected with the display panel and disposed between the display panel and the printed circuit board. The protection structure is used to protect the backlight module from the deformation caused by the external force, especially the optically films in it, like conductive film etc. The protection structure includes a protective film, a movable piece and an elastic element. The protective film is covered on the printed circuit board and having an opening to expose the signal connector. The movable piece is connected with the protective film, and the opening is disposed between the movable piece and the protective film. | 02-16-2012 |
20120087140 | Light Module - A light module is disclosed. The light module includes a first printed circuit board, a second printed circuit board, a light source, and a fixing casing, wherein the first printed circuit board and the second printed circuit board each has a fixing part, and the fixing part of the second printed board is attached to the fixing part of the first printed board. The light source is disposed on the first printed circuit board to couple to the first printed board and the second printed board. The fixing casing has a contact surface. When the fixing casing is fixed onto the fixing parts of the second printed circuit board and the first printed circuit board, the contact surface contacts the fixing part so that the second printed circuit board is clamped between the contact surface and the first printed circuit board. | 04-12-2012 |
20120099342 | Complex Circuit Board and Fabrication Method Thereof - A complex circuit board including a printed circuit board assembly (PCBA) and a flexible printed circuit (FPC) for providing driving signals for light sources is disclosed. The PCBA includes a supporting portion and a connecting portion. The light sources are disposed above the supporting portion. The connection portion contacts electrically with a contacting portion of the FPC. The contacting portion of the FPC has a fixing hole. The connecting portion of the PCBA has a fixing portion. Moreover, the FPC has two or more than two first bend portions on the contacting portion. The fixing portion of the PCBA is inserted into the fixing hole of the FPC to complete the complex circuit board without extra attachment units. Therefore, the assembly procedure is simplified to increase throughput and the cost is reduced. | 04-26-2012 |
20130121025 | BACKLIGHT MODULE - A backlight module includes a light guide plate and a light emitting unit. The light guide plate has a first side surface, a second side surface, and a third side surface. The first side surface is located opposite to the second side surface. A height of the first side surface is greater than a height of the second side surface. The third side surface is located between the first side surface and the second side surface and has a light entrance surface and a light exit surface. The light entrance surface is connected to the first side surface and the light exit surface. The light exit surface is connected to the second side surface. An included angle is formed between the light entrance surface and the light exit surface. The light emitting unit is disposed on the light entrance surface. | 05-16-2013 |
20130128619 | Backlight Module and Light Source Module Thereof - A backlight module and a light source module thereof are disclosed. The light source module includes a substrate, at least one first light source, and at least one second light source. The substrate includes a first substrate portion and a second substrate portion. The first substrate portion extends along a length direction, and the second substrate portion bends an acute angle corresponding to an extending surface of the first substrate portion. The at least one first light source and the at least one second light source are disposed on the first substrate portion and the second substrate portion respectively. The acute angle is existed between the light-emitting directions of the first light source and the second light source, and the light-emitting directions are parallel to the first substrate portion. | 05-23-2013 |
20130256671 | DISPLAY APPARATUS - A display apparatus includes a backlight module, a panel module, and a plurality of double-sided adhesive tapes. The backlight module includes a bezel. The frame has a supporting surface. The panel module includes a glass substrate and a plurality of chips. The glass substrate is disposed on the supporting surface. An edge of the glass substrate has a bonding region. The chips are disposed at the bonding region. The chips and the supporting surface are respectively located at two opposite sides of the glass substrate. The double-sided adhesive tapes are disposed between the supporting surface and the bonding region. Each of the double-sided adhesive tapes is aligned with a gap between two adjacent chips. | 10-03-2013 |
20140029302 | BACKLIGHT MODULE AND ASSEMBLY METHOD THEREOF - A backlight module includes a light guide plate with at least one light incident surface, and a light source structure arranged at a side of the light guide plate. The light source structure includes a reflection cover and at least one light emitting module. At least one positioning pin is arranged on the reflection cover. The at least one light emitting module is installed on the reflection cover and corresponding to the at least one light incident surface. The at least one light emitting module is fixed on the positioning pin in a rotatable manner, such that the at least one light emitting module can rotate around the positioning pin as an axis when the reflection cover is combined with the light guide plate, so as to allow the at least one light emitting module facing the at least one light incident surface. | 01-30-2014 |
20140104814 | DISPLAY APPARATUS - A display apparatus includes a frame, a panel module and an adjusting pad. The frame has a supporting surface, and the panel module includes a substrate and a plurality of chips. The substrate is disposed on the supporting surface and has a bonding region at a side of the substrate. The chips are disposed on the bonding region, wherein the chips and the supporting surface are located at two opposite surfaces of the substrate. The adjusting pad is disposed between the supporting surface and the bonding region, and the thickness of the adjusting pad is gradually reduced from a center portion of the adjusting pad toward two sides of the adjusting pad. Another display apparatus, in which a frame and an adjusting pad are integrated into one piece, is provided. | 04-17-2014 |
20140109403 | Complex Circuit Board and Fabrication Method Thereof - A complex circuit board including a printed circuit board assembly (PCBA) and a flexible printed circuit (FPC) for providing driving signals for light sources is disclosed. The PCBA includes a supporting portion and a connecting portion. The light sources are disposed above the supporting portion. The connection portion contacts electrically with a contacting portion of the FPC. The contacting portion of the FPC has a fixing hole. The connecting portion of the PCBA has a fixing portion. Moreover, the FPC has two or more than two first bend portions on the contacting portion. The fixing portion of the PCBA is inserted into the fixing hole of the FPC to complete the complex circuit board without extra attachment units. Therefore, the assembly procedure is simplified to increase throughput and the cost is reduced. | 04-24-2014 |
20140112008 | Light Module - A light module is disclosed. The light module includes a first printed circuit board, a second printed circuit board, a light source, and a fixing casing, wherein the first printed circuit board and the second printed circuit board each has a fixing part, and the fixing part of the second printed board is attached to the fixing part of the first printed board. The light source is disposed on the first printed circuit board to couple to the first printed board and the second printed board. The fixing casing has a contact surface. When the fixing casing is fixed onto the fixing parts of the second printed circuit board and the first printed circuit board, the contact surface contacts the fixing part so that the second printed circuit board is clamped between the contact surface and the first printed circuit board. | 04-24-2014 |
Patent application number | Description | Published |
20110261306 | Blue Phase Liquid Crystal Display and Method for Fabricating the Same - A method for fabricating a blue phase liquid crystal display is provided. A first substrate is arranged opposite to a second substrate, in which the first and second substrates include a first and a second electrode, respectively. A blue phase liquid crystal layer is sealed between the first substrate and the second substrate, in which the blue phase liquid crystal layer includes a positive blue phase liquid crystal and a monomer. A voltage is applied to the first electrode and the second electrode such that a vertical electric field is formed. The blue phase liquid crystal layer is illuminated with a light source such that the monomer performs polymerization to produce a polymer-stabilized positive blue phase liquid crystal. A blue phase liquid crystal display is also disclosed herein. | 10-27-2011 |
20110273638 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a first substrate, a second substrate, a first vertical electrode, a second vertical electrode, a first pixel electrode, a first counter electrode, and a liquid crystal layer. The second substrate is disposed to be opposite to the first substrate, the liquid crystal layer is interposed between the first and second substrates. The liquid crystal layer includes polymer stabilized positive blue phase liquid crystal. The first vertical electrode is at an inner side of the first substrate, and faces the second substrate. The second vertical electrode is at an inner side surface of the second substrate and faces the first vertical electrode. The second vertical electrode and the first vertical electrode have different electrical potentials thus form a vertical electric field perpendicular to the first substrate and the second substrate. The first pixel electrode is at the inner side of the first substrate and faces the second substrate. The first counter electrode is at an inner side of the first substrate. The first pixel electrode and the first counter electrode have different electrical potentials. The first pixel electrode and the first counter electrode provide a horizontal electric field parallel to the first substrate and the second substrate. | 11-10-2011 |
20120162181 | DISPLAY PANEL, PIXEL CIRCUIT AND DRIVING METHOD OF DIFFERENTIAL VOLTAGE DRIVEN DEVICE THEREIN - A display panel, a pixel circuit and a driving method of a differential voltage driving device are disclosed. The driving method includes: respectively supplying an alternating common voltage in a first polarity and a first display data in a second polarity to two terminals of the differential voltage driven device in a first frame; disconnecting the differential voltage driven device from the alternating common voltage, thereby keeping one terminal of the differential voltage driving device at the first polarity of the alternating common voltage; converting the alternating common voltage to the second polarity in a second frame which is consecutive to the first frame; and respectively supplying the alternating common voltage in the second polarity and a second display data in the first polarity to the two terminals of the differential voltage driving device in the second frame, here the first polarity is inverse to the second polarity. | 06-28-2012 |
20130078884 | METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY PANEL - The present invention provides a method of manufacturing a liquid crystal display panel. First, a top substrate, a bottom substrate, and a liquid crystal medium are provided, and the liquid crystal medium is filled between the top substrate and the bottom substrate. Next, an electric field is applied to the liquid crystal medium. Then, the electric field is stopped. Thereafter, an energy light beam is irradiated on the liquid crystal medium to form a liquid crystal layer. | 03-28-2013 |
20130083271 | BLUE PHASE LIQUID CRYSTAL DISPLAY DEVICE - A blue phase liquid crystal display device includes a backlight module and a blue phase liquid crystal display panel. The backlight module includes a plurality of light sources. The light sources generate a plurality of primary color lights with different bands. The blue phase liquid crystal display panel includes a blue phase liquid crystal layer. The blue phase liquid crystal layer includes a plurality of blue phase liquid crystal molecules and a plurality of chiral dopants. The blue phase liquid crystal layer has a reflection band. The reflection band is located between the bands of two adjacent primary color lights. | 04-04-2013 |
20140184991 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes an upper substrate, a lower substrate, a liquid crystal layer disposed between the upper and lower substrates and including liquid crystal molecules with optical isotropicity, a first polarizer disposed on a surface of the upper substrate, having a first polarization direction, a second polarizer disposed on a surface of the lower substrate, having a second polarization direction, and at least one pixel region defined on the lower substrate. The pixel region includes at least one pixel electrode disposed on the lower substrate, the pixel electrode extending along a first direction in the pixel region and a majority portion of an edge of the pixel electrode substantially being parallel to at least one of the first polarization direction and the second polarization direction. | 07-03-2014 |
20140218413 | PIXEL AND DRIVING METHOD THEREOF - A pixel includes a first electrode, a second electrode and a third electrode. The first electrode and the second electrode are formed on a lower substrate. The third electrode is formed on an upper substrate and above a position between the first and second electrodes. Liquid crystals are formed between the upper and lower substrates. A method for driving the pixel includes providing a first data voltage to the first electrode, providing a second data voltage to the second electrode, and providing a common voltage to the third electrode. The common voltage is substantially the mean value of the first and second data voltages. | 08-07-2014 |
20150036080 | Optical Film and Display Device Having the Same - An optical film and a display device having the same are provided. The optical film has a light input face, a light output face opposite to the light input face, and a light-output structure disposed on the light output face. The light-output structure includes a plurality of light output microstructures such as prisms disposed side by side along a first direction on the light output face. Each prism has a first quadrilateral cross section parallel to the first direction. A first side of the quadrilateral cross section is connected to the light output face and includes a first angle with the light output face, wherein the first angles of the prisms continuously arranged have angle values varying in a periodic manner. | 02-05-2015 |
Patent application number | Description | Published |
20100006934 | Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentrations - A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type overlying the semiconductor substrate and laterally adjoining the first well region; a gate dielectric extending from over the first well region to over the second well region; a drain region in the second well region; a source region on an opposite side of the gate dielectric than the drain region; and a gate electrode on the gate dielectric. The gate electrode includes a first portion directly over the second well region, and a second portion directly over the first well region. The first portion has a first impurity concentration lower than a second impurity concentration of the second portion. | 01-14-2010 |
20110008944 | Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentrations - A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type overlying the semiconductor substrate and laterally adjoining the first well region; a gate dielectric extending from over the first well region to over the second well region; a drain region in the second well region; a source region on an opposite side of the gate dielectric than the drain region; and a gate electrode on the gate dielectric. The gate electrode includes a first portion directly over the second well region, and a second portion directly over the first well region. The first portion has a first impurity concentration lower than a second impurity concentration of the second portion. | 01-13-2011 |
20110133276 | Gate Dielectric Formation for High-Voltage MOS Devices - An integrated circuit structure includes a semiconductor substrate and a high-voltage metal-oxide-semiconductor (HVMOS) device, which includes a first high-voltage well (HVW) region of a first conductivity type in the semiconductor substrate; a drain region of a second conductivity type opposite the first conductivity type in the semiconductor substrate and spaced apart from the first HVW region; a gate dielectric with at least a portion directly over the first HVW region; and a gate electrode over the gate dielectric. The gate dielectric includes a bottom gate oxide region; and a silicon nitride region over the bottom gate oxide region. | 06-09-2011 |
20110163376 | HIGH VOLTAGE DEVICES AND METHODS OF FORMING THE HIGH VOLTAGE DEVICES - A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type. | 07-07-2011 |
20120091529 | HIGH VOLTAGE RESISTOR - Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities. | 04-19-2012 |
20120119265 | SOURCE TIP OPTIMIZATION FOR HIGH VOLTAGE TRANSISTOR DEVICES - The present disclosure provides a method for fabricating a high-voltage semiconductor device. The method includes designating first, second, and third regions in a substrate. The first and second regions are regions where a source and a drain of the semiconductor device will be formed, respectively. The third region separates the first and second regions. The method further includes forming a slotted implant mask layer at least partially over the third region. The method also includes implanting dopants into the first, second, and third regions. The slotted implant mask layer protects portions of the third region therebelow during the implanting. The method further includes annealing the substrate in a manner to cause diffusion of the dopants in the third region. | 05-17-2012 |
20120126334 | BREAKDOWN VOLTAGE IMPROVEMENT WITH A FLOATING SUBSTRATE - The present disclosure provides a semiconductor device that includes a substrate having a resistor element region and a transistor region, a floating substrate in the resistor element region of the substrate, an epitaxial layer disposed over the floating substrate, and an active region defined in the epitaxial layer, the active region surrounded by isolation structures. The device further includes a resistor block disposed over an isolation structure, and a dielectric layer disposed over the resistor block, the isolation structures, and the active region. A method of fabricating such semiconductor devices is also provided. | 05-24-2012 |
20120132995 | STACKED AND TUNABLE POWER FUSE - The present disclosure provides a semiconductor device that includes a transistor including a substrate, a source, a drain, and a gate, and a fuse stacked over the transistor. The fuse includes an anode contact coupled to the drain of the transistor, a cathode contact, and a resistor coupled to the cathode contact and the anode contact via a first Schottky diode and a second Schottky diode, respectively. A method of fabricating such semiconductor devices is also provided. | 05-31-2012 |
20120139041 | HIGH SIDE GATE DRIVER DEVICE - The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate; a doped extension region formed in the drift region and having a second doping polarity opposite the first doping polarity, the doped extension region including a laterally-extending component; a dielectric structure formed over the drift region, the dielectric structure being separated from the doped extension region by a portion of the drift region; a gate structure formed over a portion of the dielectric structure and a portion of the doped extension region; and a doped isolation region having the second doping polarity, the doped isolation region at least partially surrounding the drift region and the doped extension region. | 06-07-2012 |
20120181629 | HV Interconnection Solution Using Floating Conductors - A device includes a first and a second heavily doped region in a semiconductor substrate. An insulation region has at least a portion in the semiconductor substrate, wherein the insulation region is adjacent to the first and the second heavily doped regions. A gate dielectric is formed over the semiconductor substrate and having a portion over a portion of the insulation region. A gate is formed over the gate dielectric. A floating conductor is over and vertically overlapping the insulation region. A metal line includes a portion over and vertically overlapping the floating conductor, wherein the metal line is coupled to, and carries a voltage of, the second heavily doped region. | 07-19-2012 |
20120193637 | LOW GATE-LEAKAGE STRUCTURE AND METHOD FOR GALLIUM NITRIDE ENHANCEMENT MODE TRANSISTOR - The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; and a gate stack disposed on the AlGaN layer. The gate stack includes a III-V compound n-type doped layer; a III-V compound p-type doped layer adjacent the III-V compound n-type doped layer; and a metal layer formed over the III-V compound p-type doped layer and the III-V compound n-type doped layer. | 08-02-2012 |
20120280361 | HIGH VOLTAGE RESISTOR WITH BIASED-WELL - Provided is a high voltage semiconductor device. The semiconductor device includes a doped well located in a substrate that is oppositely doped. The semiconductor device includes a dielectric structure located on the doped well. A portion of the doped well adjacent the dielectric structure has a higher doping concentration than a remaining portion of the doped well. The semiconductor device includes an elongate polysilicon structure located on the dielectric structure. The elongate polysilicon structure has a length L. The portion of the doped well adjacent the dielectric structure is electrically coupled to a segment of the elongate polysilicon structure that is located away from a midpoint of the elongate polysilicon structure by a predetermined distance that is measured along the elongate polysilicon structure. The predetermined distance is in a range from about 0*L to about 0.1*L. | 11-08-2012 |
20120299096 | HIGH VOLTAGE AND ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGES - A lateral DMOS transistor is provided with a source region, a drain region, and a conductive gate. The drain region is laterally separated from the conductive gate by a field oxide that encroaches beneath the conductive gate. The lateral DMOS transistor may be formed in a racetrack-like configuration with the conductive gate including a rectilinear portion and a curved portion and surrounded by the source region. Disposed between the conductive gate and the trapped drain is one or more levels of interlevel dielectric material. One or more groups of isolated conductor leads are formed in or on the dielectric layers and may be disposed at multiple device levels. The isolated conductive leads increase the breakdown voltage of the lateral DMOS transistor particularly in the curved regions where electric field crowding can otherwise degrade breakdown voltages. | 11-29-2012 |
20120319240 | High Voltage Resistor With Pin Diode Isolation - Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a second doped well. The first and second doped wells have opposite doping polarities and greater doping concentration levels than the intrinsic region. The semiconductor device includes an insulating structure formed over a portion of the first doped well. The semiconductor device includes an elongate resistor device formed over the insulating structure. The resistor device has first and second portions disposed at opposite ends of the resistor device, respectively. The semiconductor device includes an interconnect structure formed over the resistor device. The interconnect structure includes: a first contact that is electrically coupled to the first doped well and a second contact that is electrically coupled to a third portion of the resistor located between the first and second portions. | 12-20-2012 |
20130032862 | High Voltage Resistor with High Voltage Junction Termination - Provided is a high voltage semiconductor device. The high voltage semiconductor device includes a substrate that includes a doped well disposed therein. The doped well and the substrate have opposite doping polarities. The high voltage semiconductor device includes an insulating device disposed over the doped well. The high voltage semiconductor device includes an elongate resistor disposed over the insulating device. A non-distal portion of the resistor is coupled to the doped well. The high voltage semiconductor device includes a high-voltage junction termination (HVJT) device disposed adjacent to the resistor. | 02-07-2013 |
20140021560 | HIGH VOLTAGE DEVICE WITH A PARALLEL RESISTOR - Provided is a high voltage semiconductor device. The high voltage semiconductor device includes a transistor having a gate, a source, and a drain. The source and the drain are formed in a doped substrate and are separated by a drift region of the substrate. The gate is formed over the drift region and between the source and the drain. The transistor is configured to handle high voltage conditions that are at least a few hundred volts. The high voltage semiconductor device includes a dielectric structure formed between the source and the drain of the transistor. The dielectric structure protrudes into and out of the substrate. Different parts of the dielectric structure have uneven thicknesses. The high voltage semiconductor device includes a resistor formed over the dielectric structure. The resistor has a plurality of winding segments that are substantially evenly spaced apart. | 01-23-2014 |
20140054695 | High Side Gate Driver Device - The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate; a doped extension region formed in the drift region and having a second doping polarity opposite the first doping polarity, the doped extension region including a laterally-extending component; a dielectric structure formed over the drift region, the dielectric structure being separated from the doped extension region by a portion of the drift region; a gate structure formed over a portion of the dielectric structure and a portion of the doped extension region; and a doped isolation region having the second doping polarity, the doped isolation region at least partially surrounding the drift region and the doped extension region. | 02-27-2014 |
20140057407 | High Voltage Resistor - Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities. | 02-27-2014 |
20140110782 | Source Tip Optimization For High Voltage Transistor Devices - The present disclosure provides a method for fabricating a high-voltage semiconductor device. The method includes designating first, second, and third regions in a substrate. The first and second regions are regions where a source and a drain of the semiconductor device will be formed, respectively. The third region separates the first and second regions. The method further includes forming a slotted implant mask layer at least partially over the third region. The method also includes implanting dopants into the first, second, and third regions. The slotted implant mask layer protects portions of the third region therebelow during the implanting. The method further includes annealing the substrate in a manner to cause diffusion of the dopants in the third region. | 04-24-2014 |
20140139282 | Embedded JFETs for High Voltage Applications - A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET. | 05-22-2014 |
20140197488 | METHOD OF FORMING HIGH VOLTAGE DEVICE - A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region of the first dopant type and the buried well region of the first dopant type. A second well region of the second dopant type is formed in the well region of the first dopant type. An isolation structure is formed at least partially in the well region of the first dopant type. A first gate electrode is formed over the isolation structure and the second well region of the second dopant type. | 07-17-2014 |
20140231884 | BOOTSTRAP MOS FOR HIGH VOLTAGE APPLICATIONS - A device includes a p-well region, and a first High-Voltage N-type Well (HVNW) region and a second HVNW region contacting opposite edges of the p-well region. A P-type Buried Layer (PBL) has opposite edges in contact with the first HVNW region and the second HVNW region. An n-type buried well region is underlying the PBL. The p-well region and the n-type buried well region are in contact with a top surface and a bottom surface, respectively, of the PBL. The device further includes a n-well region in a top portion of the p-well region, an n-type source region in the n-well region, a gate stack overlapping a portion of the p-well region and a portion of the second HVNW region, and a channel region under the gate stack. The channel region interconnects the n-well region and the second HVNW region. | 08-21-2014 |
20140235028 | High Voltage Resistor with Pin Diode Isolation - Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a second doped well. The first and second doped wells have opposite doping polarities and greater doping concentration levels than the intrinsic region. The semiconductor device includes an insulating structure formed over a portion of the first doped well. The semiconductor device includes an elongate resistor device formed over the insulating structure. The resistor device has first and second portions disposed at opposite ends of the resistor device, respectively. The semiconductor device includes an interconnect structure formed over the resistor device. The interconnect structure includes: a first contact that is electrically coupled to the first doped well and a second contact that is electrically coupled to a third portion of the resistor located between the first and second portions. | 08-21-2014 |
20140264637 | STRIP-GROUND FIELD PLATE - Among other things, one or more semiconductor devices and techniques for forming such semiconductor devices are provided. The semiconductor device comprises a strip-ground field plate. The strip-ground field plate is connected to a source region of the semiconductor device and/or a ground plane. The strip-ground field plate provides a release path for a gate edge electric field. The release path directs an electrical field away from a gate region of the semiconductor device. In this way, breakdown voltage and gate charge are improved. | 09-18-2014 |
20140322889 | HIGH VOLTAGE RESISTOR WITH BIASED-WELL - Provided is a high voltage semiconductor device. The semiconductor device includes a doped well located in a substrate that is oppositely doped. The semiconductor device includes a dielectric structure located on the doped well. A portion of the doped well adjacent the dielectric structure has a higher doping concentration than a remaining portion of the doped well. The semiconductor device includes an elongate polysilicon structure located on the dielectric structure. The elongate polysilicon structure has a length L. The portion of the doped well adjacent the dielectric structure is electrically coupled to a segment of the elongate polysilicon structure that is located away from a midpoint of the elongate polysilicon structure by a predetermined distance that is measured along the elongate polysilicon structure. The predetermined distance is in a range from about 0*L to about 0.1*L. | 10-30-2014 |
20140327075 | HIGH VOLTAGE AND ULTRA-HIGH VOLTAGE SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGES - A lateral DMOS transistor is provided with a source region, a drain region, and a conductive gate. The drain region is laterally separated from the conductive gate by a field oxide that encroaches beneath the conductive gate. The lateral DMOS transistor may be formed in a racetrack-like configuration with the conductive gate including a rectilinear portion and a curved portion and surrounded by the source region. Disposed between the conductive gate and the trapped drain is one or more levels of interlevel dielectric material. One or more groups of isolated conductor leads are formed in or on the dielectric layers and may be disposed at multiple device levels. The isolated conductive leads increase the breakdown voltage of the lateral DMOS transistor particularly in the curved regions where electric field crowding can otherwise degrade breakdown voltages. | 11-06-2014 |
Patent application number | Description | Published |
20110304042 | Copper Bump Structures Having Sidewall Protection Layers - A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer. | 12-15-2011 |
20120001337 | Alignment Mark and Method of Formation - In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess. | 01-05-2012 |
20120056315 | Alignment Marks in Substrate Having Through-Substrate Via (TSV) - A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate. | 03-08-2012 |
20120128457 | Reconfigurable Guide Pin Design for Centering Wafers Having Different Sizes - An apparatus includes a robot arm, and a plurality of guide pins mounted on the robot arm. Each of the plurality of guide pins includes a plurality of wafer supports at different levels, with each of the plurality of wafer supports configured to support and center a wafer having a size different from wafers configured to be supported and centered by remaining ones of the plurality of wafer supports | 05-24-2012 |
20120313247 | Through Silicon Via Structure and Method - A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via. | 12-13-2012 |
20130183831 | Reducing Substrate Warpage in Semiconductor Processing - System and method for reducing substrate warpage in a thermal process. An embodiment comprises pre-heating a substrate in a loadlock chamber before performing the thermal process of the substrate. After the thermal process, the substrate is cooled down in a loadlock chamber. The pre-heat and cool-down process reduces the warpage of the substrate caused by the differences in coefficients of thermal expansion (CTEs) of the materials that make up the substrate. | 07-18-2013 |
20130334832 | Reconfigurable Guide Pin Design for Centering Wafers Having Different Sizes - An apparatus includes a robot arm, and a plurality of guide pins mounted on the robot arm. Each of the plurality of guide pins includes a plurality of wafer supports at different levels, with each of the plurality of wafer supports configured to support and center a wafer having a size different from wafers configured to be supported and centered by remaining ones of the plurality of wafer supports | 12-19-2013 |
20140203439 | Through Silicon Via Structure and Method - A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via. | 07-24-2014 |
20150069580 | Alignment Mark and Method of Formation - In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess. | 03-12-2015 |
Patent application number | Description | Published |
20090195713 | Shared light source in an electronic device - An optical module is used in an electronic device to share a light source. The light source can be shared concurrently with an image projection device and a different component, such as a liquid crystal display device. Alternatively, the light source is used for providing illumination to the component only when the light source is not used by the image projection device. When the light source is used for providing illumination to the liquid crystal display device, at least part of the light beam from the light source is coupled to a back-light unit of the display device, for example. In addition to providing illumination to the liquid crystal display device, part of the light beam can also be used to provide illumination to other accessories or components, such as a keyboard of the electronic device. | 08-06-2009 |
20090239003 | Optical plate, backlight module and liquid crystal display using the same - An optical plate comprising a base having a plurality of protrusions and flat portions, wherein the protrusions and the flat portions are arranged alternately; at least one auxiliary structure, formed on the protrusions, having birefringence; and a matching layer formed on the base and the auxiliary structure is provided. | 09-24-2009 |
20100002467 | Light Guide Plate and Backlight Module Using the Light Guide Plate - A backlight module of the present invention includes a light source unit and a light guide plate. The light guide plate has a light incident surface, and the light emitting unit is disposed corresponding to the light incident surface to provide a light incident on the light guide plate. The light marches in the light guide plate and provides a uniform lighting effect. A plurality of microstructures is disposed on the light incident surface, and each of the microstructure has a microstructure depth. The light guide plate has a plate thickness. The ratio of the microstructure depth to the plate thickness is substantially between 0.003 and 0.0625. | 01-07-2010 |
20100283748 | MULTI-TOUCH METHOD FOR RESISTIVE TOUCH PANEL - When operating a resistive touch panel, a first command is issued by touching the touch panel using a finger. When the finger remains in contact with the touch panel, a second command is issued by touching the touch panel using a stylus. Therefore, a corresponding gesture operation can be executed in multi-touch applications after identifying the first and second commands. | 11-11-2010 |
20110157059 | Touch Display Panel and Touch Sensing Method Thereof - This disclosure relates to a touch display panel and more specifically to a borderless touch display panel. The touch display panel includes a Fresnel lens, a touch-sensing panel and a coordinate transforming module, wherein the flat display panel and the Fresnel lens are spaced apart by a distance. The flat display panel outputs an original image having an original coordinate system. The Fresnel lens is used to transform the original image into a display image to be viewed by the user, wherein the display image has a display coordinate system. The touch sensing panel will sense the user's touch and output a touch coordinate of a touch and the coordinate transforming module will transform the touch coordinate into an action coordinate based on a transformation parameter set. The transformation parameter set includes a magnification parameter and a shift parameter for compensating for the positional difference between the touch coordinate and the action coordinate due to the distance between the flat display panel and the Fresnel lens. | 06-30-2011 |
Patent application number | Description | Published |
20110037923 | LIGHT CONDENSING FILM, BACKLIGHT MODULE AND LIQUID CRYSTAL DISPLAY - A light condensing film includes a reflective unit, a light-transmissive substrate, a plurality of lenses, and a plurality of refractive units. The reflective unit has a plurality of holes passing through the reflective unit, wherein the holes are distributed at the reflective unit. The light-transmissive substrate is disposed on the reflective unit. The lenses are disposed on the light-transmissive substrate. Moreover, the lenses respectively cover the holes of the reflective unit, and the light-transmissive substrate is disposed between the reflective unit and each of the lenses. The refractive units are disposed on the light-transmissive substrate and distributed among the lenses. The light-transmissive substrate is disposed between the reflective unit and each of the refractive units. Each of the refractive units has a light refraction plane surface. A backlight module and a liquid crystal display are also provided. | 02-17-2011 |
20110044072 | BACKLIGHT MODULE AND LIGHT GUIDE UNIT - A light guide unit includes a light transmissive base, a plurality of scattering particles, and a plurality of reflective particles. The light transmissive base includes a scattering region and a reflective region. The scattering region has a light emitting surface, a boundary surface, and a light incident surface. The reflective region includes a lamp cover portion and a bottom portion. The lamp cover portion is disposed beside the light incident surface. The bottom portion is disposed at one side of the boundary surface and connected with the scattering region through the boundary surface. The light transmissive base is integrally formed. The scattering particles are doped in the scattering region, and the reflective particles are doped in the reflective region. The number density of the scattering particles in the scattering region is less than that of the reflective particles in the reflective region. A backlight module is also provided. | 02-24-2011 |
20110050646 | OPTICAL TOUCH APPARATUS AND OPTICAL TOUCH DISPLAY APPARATUS - An optical touch apparatus is adapted to a display apparatus. The optical touch apparatus includes at least one light source, at least one light guide unit, and at least one optical detector. The light source is disposed beside a display area of the display apparatus and capable of providing a light beam. The light guide unit is disposed beside the display area in a transmission path of the light beam and has a first surface, a second surface opposite to the first surface, and a light incident surface. The light incident surface connects the first and second surfaces. The light beam is capable of entering the light guide unit through the light incident surface and is transmitted to a sensing space in front of the display area. The optical detector is disposed beside the display area to sense an intensity variation of the light beam in the sensing space. | 03-03-2011 |
20110096566 | BACKLIGHT MODULE - A backlight module includes a light guide plate, micro-structures, at least one light source, and a first prism sheet. The light guide plate includes a first surface, a second surface, and a light incident surface connecting the first surface and the second surface. The micro-structures are disposed on at least one of the first surface and the second surface. The light source is disposed beside the light incident surface and capable of emitting a light beam. The first prism sheet includes a first transparent substrate and first prism structures. The first surface is located between the second surface and the first transparent substrate. The first transparent substrate is disposed among the first surface and the first prism structures. Each first prism structure has a first vertex angle protruding away from the first transparent substrate, and the first vertex angle falls within a range of 67 degrees to 83 degrees. | 04-28-2011 |
20110096567 | LIGHT GUIDE PLATE AND BACKLIGHT MODULE - A light guide plate is adapted for a backlight module having at least one light emitting device, and the light guide plate includes a light emitting surface, a surface opposite to the light emitting surface, a light incident surface connected with the light emitting surface and the surface, and a plurality of microstructures disposed on the light emitting surface or the surface. 90 percent or more of the surface or the light emitting surface is flat. At least one of the light emitting devices is disposed beside the light incident surface and capable of emitting a light beam. The light incident surface is capable of making the light beam enter the light guide plate and the light emitting surface is capable of making the light beam transmit outside the light guide plate. A backlight module is also provided. | 04-28-2011 |
20110122095 | TOUCH DISPLAY APPARATUS AND BACKLIGHT MODULE - A touch display apparatus including a light guide plate, a light emitting module, a display panel, a plurality of prism structures, an image transmission unit, and an image detector is provided. The light guide plate has a first surface, a second surface opposite to the first surface, and a light incident surface connecting the first surface and the second surface. The light emitting module includes at least one visible light source and at least one invisible light source. The prism structures are disposed between the first surface and the display panel. The image transmission unit includes a wedge portion and a light guide portion. The wedge portion is disposed between the prism structures and the display panel. The image detector is disposed beside the light guide portion for receiving the invisible light beam from the light guide portion. A backlight module is also provided. | 05-26-2011 |
20110128256 | LIGHT GUIDE APPARATUS AND OPTICAL TOUCH DISPLAY APPARATUS - A light guide apparatus is adapted to a touch display apparatus. The touch display apparatus has a display area. The light guide apparatus includes a plurality of light guide units and a plurality of light sources. The light guide units are disposed beside a first side of the display area. Each of the light guide units has a light incident surface, and a space is between each two adjacent light guide units. The light sources are disposed beside the light incident surfaces of the light guide units. Each of the light sources is capable of providing a beam. The beam is capable of entering the light guide unit through the light incident surface and is capable of being transmitted to an external environment from the light guide unit. An optical touch display apparatus is also provided. | 06-02-2011 |
20110199789 | LIGHT SOURCE APPARATUS - A light source apparatus including a light source, an optical fiber, a light guide module, and a light shape adjustment element is provided. The light source emits a light beam. The optical fiber disposed in a transmission path of the light beam has a light incident end and a light emitting end. The light beam enters the optical fiber through the light incident end and leaves the optical fiber through the light emitting end. The light guide module has a first surface, a second surface opposite to the first surface, and a light incident surface connecting the first surface and the second surface. The light beam from the light emitting end enters the light guide module through the light incident surface. The light shape adjustment element is connected to the light guide module and capable of changing a light shape of an emitted light from the light guide module. | 08-18-2011 |
20110241573 | LIGHT GUIDE PLATE AND LIGHT SOURCE MODULE - A light guide plate includes a first surface, a second surface, at least a light incident surface, and a plurality of groove sets. The second surface is opposite to the first surface. The light incident surface connects the first surface and the second surface. The groove sets are separately disposed on the second surface. Each of the groove sets includes a plurality of curved grooves. Each of the curved grooves has a curved inclined reflective surface and a curved light-back-surface. The curved inclined reflective surface is inclined with respect to the first surface. The curved grooves of each of the groove sets curve towards a same curving direction. The curved inclined reflective surface of one of two curved grooves is connected to the curved light-back-surface of the other one of the two curved grooves. A backlight module is also provided. | 10-06-2011 |
20110292680 | LIGHT GUIDE UNIT AND LIGHT SOURCE MODULE - A light guide unit having a planar portion, a first curved portion, and a second curved portion are disclosed. The first curved portion has a first optical surface, a second optical surface, and a light incident surface connecting the first and the second optical surfaces. The planar portion has a first and a second surfaces, respectively, connected to the first and the second optical surfaces. Absolute values of slopes of the first and second optical surfaces with respect to the first and second surfaces gradually increase near to the light incident surface, respectively. The planar portion connects the first and the second curved portions having a third surface and a third optical surface, and the second surface connects the second and the third optical surfaces. An absolute value of a slope of the third optical surface with respect to the second surface gradually increases away from the first surface. | 12-01-2011 |
20120188792 | LIGHT GUIDE PLATE AND LIGHT SOURCE MODULE - A light guide plate including a first surface, a second surface, at least one light incident surface, and a plurality of groove sets is provided. The light incident surface connects the first surface and the second surface. The groove sets are separately disposed on the second surface. Each of the groove sets includes a plurality of curved grooves. Each of the curved grooves has a curved inclined reflective surface and a curved back-to-light surface connected thereto. The curved inclined reflective surface is inclined with respect to the first surface. The curved grooves of each of the groove sets curve toward the same curving direction. The curved inclined reflective surface of one of two adjacent curved grooves is connected to the curved back-to-light surface of the other one of the two adjacent curved grooves through a connection surface. A light source module is also provided. | 07-26-2012 |
20120275190 | LIGHT GUIDE PLATE AND LIGHT SOURCE MODULE - A light guide plate (LGP) includes a first surface, a second surface, at least one light incident surface, and a plurality of micro-structure sets. The second surface is opposite to the first surface. The light incident surface connects the first surface to the second surface. The micro-structure sets are separately disposed on the second surface, and the micro-structure sets are not continuous in any direction parallel to the first surface. Each of the micro-structure sets includes at least one protrusive structure that protrudes from the second surface and at least one recessive structure that is recessed in the second surface. A light source module is also provided. | 11-01-2012 |
20130201721 | LIGHT SOURCE MODULE - A light source module including a light guide plate, a light-collecting structure and a light emitting device is provided. The light guide plate has a first light emitting surface, a bottom surface, a first light incident surface connecting with the bottom surface and the first light emitting surface, and an optical microstructure unit. The optical microstructure unit includes at least two optical microstructures. Each optical microstructure has a recessing part and a protruding part on the bottom surface. The light-collecting structure has a second light emitting surface connecting with the first light incident surface, a second light incident surface and a reflecting surface connecting with the second light emitting surface and the second light incident surface. A sectional line obtained by sectioning the reflecting surface along a first reference plane includes a first parabola. The reference plane is parallel to the first light emitting surface. | 08-08-2013 |
20130235608 | LIGHT SOURCE MODULE - A light source module includes an optical unit, which includes a light-emitting device, a light-guiding device and a light-converging structure. The light-guiding device has a light incident end, a light emitting end, a first curved surface connecting the light incident end and the light emitting end, and a side surface. The light-emitting device is disposed beside the light incident end. The section of the first curved surface by the side surface is a first curve. The section of the first curved surface by the reference plane perpendicular to the side surface is a second curve. The light-converging structure is disposed between the light-emitting device and the light incident end and has a first arc-convex surface and two second convex surfaces, in which the first arc-convex surface and the second convex surfaces are arranged along a direction parallel to the side-surface. | 09-12-2013 |
20130286679 | LIGHT GUIDE PLATE AND BACKLIGHT MODULE USING THE SAME - A backlight module includes a light guide plate (LGP), a light source, and at least one prism sheet. The LGP includes a light emitting surface, a bottom surface, a light incident surface, and a plurality of first microstructures on the bottom surface. Each of the first microstructure is a recessed structure and includes a first surface and a second surface. An included angle between the first surface and the bottom surface ranges from 15 degrees to 27 degrees. An included angle between the second surface and the bottom surface ranges from 50 degrees to 90 degrees. The light source provides a light beam, and an included angle between a light emitting direction of the light beam emitted from the light emitting surface of the LGP and a normal direction of the light emitting surface is greater than 30 degrees. The prism sheet is disposed above the light emitting surface. | 10-31-2013 |
20140071674 | LIGHT EMITTING APPARATUS AND LENS - A light emitting apparatus, including at least one lens, at least one light emitting element, and a light emitting section, is provided. The lens includes a first curving surface and a second curving surface opposite to the first curving surface. The light emitting element is adapted for emitting a light beam and is disposed on a side of the second curving surface. The light emitting section has a central area and is disposed on a side of the first curving surface, wherein the light beam emitted from the light emitting element is transmitted out of the light emitting apparatus through the second curving surface, the first curving surface, and the light emitting section in sequence. An optical axis of the second curving surface is close to the central area with respect to an optical axis of the first curving surface. A lens is provided as well. | 03-13-2014 |
20140085919 | VEHICLE ILLUMINATION APPARATUS - A vehicle illumination apparatus includes at least one illumination light source and at least one light guiding lens. The illumination light source is capable of providing an illumination beam. The light guiding lens includes a first light transmissive surface, a second light transmissive surface opposite to and smaller than the first light transmissive surface, an inner surrounding surface, and an outer surrounding surface. The first light transmissive surface is capable of projecting the illumination beam out of the light guiding lens. The inner surrounding surface and the second light transmissive surface are connected to each other and define a containing space configured to accommodate the illumination light source. The outer surrounding surface is connected to the inner surrounding surface and the first light transmissive surface. Besides, the outer surrounding surface has at least one light condensing region and at least one light diverging region. | 03-27-2014 |
Patent application number | Description | Published |
20080233745 | Interconnect Structures for Semiconductor Devices - A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer. | 09-25-2008 |
20090275195 | Interconnect Structure Having a Silicide/Germanide Cap Layer - An interconnect structure of an integrated circuit and a method for forming the same are provided. The interconnect structure includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a conductor in the low-k dielectric layer, and a cap layer on the conductor. The cap layer has at least a top portion comprising a metal silicide/germanide. | 11-05-2009 |
20100090343 | Interconnect Structure for Semiconductor Devices - A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer. | 04-15-2010 |
20110027991 | Interconnect Structure for Semiconductor Devices - A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer. | 02-03-2011 |
20130102148 | Interconnect Structure for Semiconductor Devices - A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar. The conductive material is silicided to form an alloy layer. The alloy layer comprises the first material and a second material of germanium, arsenic, tungsten, or gallium. | 04-25-2013 |
20150017800 | Interconnect Structure for Semiconductor Devices - A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar. The conductive material is silicided to form an alloy layer. The alloy layer comprises the first material and a second material of germanium, arsenic, tungsten, or gallium. | 01-15-2015 |
Patent application number | Description | Published |
20120107545 | MICROMACHINED STRUCTURES - A micromachined structure includes a substrate and a suspended structure. The substrate has a cavity formed thereon. The suspended structure is formed on the cavity of the substrate. The suspended structure includes a first metal layer, a second metal layer, and a first dielectric layer positioned between the first and second metal layers, wherein the first dielectric layer has a first opening in communication with the cavity through an opening formed in the first metal layer. | 05-03-2012 |
20130139595 | Three-Dimensional Micro-Electro-Mechanical-System Sensor - The present invention discloses a three-dimensional micro-electro-mechanical-system sensor. The sensor includes movable first electrodes, plural movable second electrodes, plural fixed third electrodes, and plural fixed fourth electrodes. The first electrodes and their adjacent third electrodes form at least one first capacitor and at least one second capacitor, and the second electrodes and their adjacent fourth electrodes form at least one third capacitor. The capacitance change of the first capacitor reflects the displacement of the proof mass along a first axis, the capacitance change of the second capacitor reflects the displacement of the proof mass along a second axis, and the capacitance change of the third capacitor reflects the displacement of the proof mass along a third axis. The first, second, and third axes define a three-dimensional coordinate system. | 06-06-2013 |
20130152688 | MICRO-ELECTRO-MECHANICAL SENSING DEVICE AND MANUFACTURING METHOD THEREOF - A micro-electro-mechanical sensing device including a substrate, a semiconductor layer, a supporting pillar, a first suspended arm, a connecting member, a second suspended arm, and a proof mass is provided. The semiconductor layer is disposed on or above the substrate. The supporting pillar is disposed on or above the semiconductor layer. The first suspended arm is disposed on the supporting pillar. The supporting connects a portion of the first suspended arm. The connecting member directly or indirectly connects another portion of the first suspended arm. The second suspended arm has a first surface and a second surface opposite to the first surface. The connecting member connects a portion of the first surface. The proof mass connects the second suspended arm and it includes a portion of the second suspended arm as a portion of the proof mass. A method for manufacturing the device is also provided. | 06-20-2013 |
20130334623 | MEMS Sensing Device and Method for the Same - The present invention discloses a MEMS sensing device which comprises a substrate, a MEMS device region, a film, an adhesive layer, a cover, at least one opening, and a plurality of leads. The substrate has a first surface and a second surface opposite the first surface. The MEMS device region is on the first surface, and includes a chamber. The film is overlaid on the MEMS device region to seal the chamber as a sealed space. The cover is mounted on the MEMS device region and adhered by the adhesive layer. The opening is on the cover or the adhesive layer, allowing the pressure of the air outside the device to pressure the film. The leads are electrically connected to the MEMS device region, and extend to the second surface. | 12-19-2013 |
20140109680 | MICRO-ELECTRO-MECHANICAL DEVICE AND METHOD FOR MAKING THE SAME - The invention provides a micro-electro-mechanical device which includes a substrate, an electrode, and a diaphragm. The electrode includes plural vent holes. The diaphragm is disposed above and in parallel to the electrode, to form a capacitive sensor with the electrode. The diaphragm includes plural ribs protruding upward and/or downward from the diaphragm; the ribs are respectively disposed in correspondence to the plural vent holes and do not overlap nor contact the electrode. A method for making the micro-electro-mechanical device is also provided according to the present invention. | 04-24-2014 |
20140144234 | MICRO-ELECTRO-MECHANICAL DEVICE HAVING LOW THERMAL EXPANSION DIFFERENCE - The invention provides a micro-electro-mechanical device which is manufactured by a CMOS manufacturing process. The micro-electro-mechanical device includes a stationary unit, a movable unit, and a connecting member. The stationary unit includes a first capacitive sensing region and a fixed structure region. The movable unit includes a second capacitive sensing region and a proof mass, wherein the first capacitive sensing region and the second capacitive sensing region form a capacitor, and the proof mass region consists of a single material. The connecting member is for connecting the movable unit in a way to allow a relative movement of the movable unit with respect to the stationary unit. | 05-29-2014 |
20150069538 | MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE HAVING DIFFERENTIAL CAPACITORS OF CORRESPONDING SIZES - The invention provides a micro-electro-mechanical device having differential capacitor of corresponding sizes, which includes a substrate; a top fixed electrode; a bottom fixed electrode; a mass, having a top electrode and a bottom electrode, wherein the top electrodes form a top capacitor with the top fixed electrode and the bottom electrodes form a bottom capacitor with the bottom fixed electrode; a top fixed electrode extension wall having an upper end connected to the top fixed electrode and a lower end connected to the substrate; and a bottom fixed electrode extension wall having a lower end connected to the substrate through the bottom electrode, wherein the bottom fixed electrode extension wall has no upper end connected to the top fixed electrode, and total areas of the top fixed electrode extension wall and the top fixed electrode facing the mass are substantially equal to total areas of the bottom fixed electrode extension wall and the bottom fixed electrode facing the mass. | 03-12-2015 |
Patent application number | Description | Published |
20080212321 | Diffuser Having Optical Structures - A diffuser used in a backlight module including a plurality of light sources is disclosed. The diffuser according to the present invention makes a uniform light output. The diffuser includes a transparent substrate and a plurality of optical structures. The transparent substrate has an entrance surface and an exit surface. The plurality of optical structures is disposed on the exit surface, each optical structure is dented from the exit surface to the interior of the transparent substrate and forms a refractive convex within the transparent substrate, and each refractive convex corresponds to one of the plurality of the light sources. The maximum value of the included angle between the tangent to the refractive convex edge and the normal to the exit surface is smaller than 30 degrees, such that an incident light ray from the light sources refracts and deviates from the normal to the refractive convex through the refractive convex. | 09-04-2008 |
20080316745 | Light emitting device and manufacture method thereof - A manufacture method of a light emitting device is provided. Firstly, at least one circuit board is provided. A plurality of light emitting packages, a first undetermined power input end and a second undetermined power input end are disposed at the circuit board. The light emitting packages are electrically connected to the first undetermined power input end and the second undetermined power input end. Each of the first undetermined power input end and the second undetermined power input end has at least two first pads. The first pads of each of the first undetermined power input end and the second undetermined power input end are electrically isolated from each other. Next, the first undetermined power input end is selected to be a power input region for inputting an external power signal. Then, the first pads of the second undetermined power input end are electrically connected to each other. | 12-25-2008 |
20100033987 | Backlight Module and Light Emitting Diode Module Thereof - A light emitting diode contains a package structure and a light emitting diode die embedded in the package structure. The package structure has an elliptic bottom surface having a semi-major axes and a semi-minor axis and a semi-ellipsoidal surface connecting and surrounding the edge of the elliptic bottom surface, wherein the maximum height of the ellipsoidal surface from the elliptic bottom surface is between the semi-major axes and the semi-minor axis. | 02-11-2010 |
20100135042 | Light Guide Plate Microstructure - A light guide plate microstructure is provided. The light guide plate microstructure is located on at least one surface of the light guide plate and has a plurality of groove units. Each groove unit has multiple V-shaped grooves, and each V-shaped groove has an apex angle within a range of about 80°-160°. Furthermore, at least two of the V-shaped grooves of a groove unit have different apex angles. | 06-03-2010 |
20100232178 | Light Guide Plate Assembly - Alight guide plate assembly for a backlight module is provided. The light guide plate assembly includes a plurality of light guide plates. Each light guide plate has a top face, at least one side face, and at least one connecting part. The connecting part is formed on the side face of the light guide plate. The connecting part has a connecting face, wherein the adjacent connecting faces are connected to each other. The top faces of the plurality of light guide plates are coplanar. A distance between the connecting face and the top face is ⅓ to 1/20 of the thickness of the light guide plate. | 09-16-2010 |
20100284202 | BACKLIGHT UNIT - A backlight unit includes a light guide plate and a plurality of light sources. A side of the light guide plate is provided with an optical microstructure including a plurality of convex lens members aligned along the side. The height-to-pitch ratios of the convex lens members in the central region of the optical microstructure are different from those of the convex lens members in the side regions of the optical microstructure. For example, the height-to-pitch ratios of the convex lens members in the central region of the optical microstructure are larger than the height-to-pitch ratios of the convex lens members in the side regions of the optical microstructure. The light sources may be light emitting diodes (LED) directed toward the optical microstructure. | 11-11-2010 |
20110157889 | Diffusion Plate with at Least One Star Diffusion Structure and a Lighting Module Using the Same - A diffusion plate for use with a lighting module is provided. The diffusion plate includes a substrate, a plurality of circular diffusion structures, and at least one star diffusion structure. The circular diffusion structures are disposed on one face of the substrate in array. Each circular diffusion structure includes a plurality of first partial reflecting units. The first partial reflecting units are disposed on the substrate in circular distribution. The outer arcs of adjacent circular diffusion structures together form a star region. The at least one star diffusion structure includes a plurality of second partial reflecting units. The second partial reflecting units are disposed in the star region on the face of the substrate, wherein the second partial reflecting units are distributed in star distribution. | 06-30-2011 |
20120032920 | Optical plate structure for a touch panel, and touch display panel and touch liquid crystal display panel including the same - An optical plate structure for a touch panel includes an optical plate, at least a light source, and at least an optical camera. A light-emitting surface of the optical plate includes a plurality of micro-structure. The light source is disposed beside a vertical side of the optical plate and emits a first light entering the optical plate. The optical plate guides the first light and emits a second light from the light-emitting surface. The optical camera is disposed beside the optical plate or in a corner of the optical plate and above the light-emitting surface, for detecting a third light incident on the light camera. The second light is reflected by an object touching the optical plate to become the third light. The optical plate structure for a touch panel may be utilized in a touch display panel or a touch liquid crystal display panel. | 02-09-2012 |
20120268944 | Backlight Module and Light Emitting Diode Module Thereof - A light emitting diode contains a package structure and a light emitting diode die embedded in the package structure. The package structure has an elliptic bottom surface having a semi-major axes and a semi-minor axis and a semi-ellipsoidal surface connecting and surrounding the edge of the elliptic bottom surface, wherein the maximum height of the ellipsoidal surface from the elliptic bottom surface is between the semi-major axes and the semi-minor axis. | 10-25-2012 |
20130082981 | OPTICAL TOUCH SYSTEM AND OPTICAL TOUCH DEVICE AND OPTICAL TOUCH METHOD - An optical touch system includes a display unit, a touch operation unit, and a data processing unit. The display unit is configured for displaying at least a general image frame and displaying a specific pattern frame alternately with the at least a general image frame. The touch operation unit is configured for scanning a part of the specific pattern frame and capturing image data corresponding to the part of the specific pattern frame for transmission. The data processing unit is configured for translating the image data into a coordinate position. Moreover, an optical touch device and an optical touch method also are provided. | 04-04-2013 |
20130127792 | ELECTRONIC WRITING SYSTEM AND OPERATING METHOD THEREOF - The present disclosure provides an electronic writing system including a holder, a light guide plate, at least one light source, and at least one optical film. The light guide plate is disposed in the holder, and the light guide plate has at least one light entrance surface and a light exit surface. The light source is disposed on the light entrance surface of the light guide plate, and is used for generating a light. The light enters the light guide plate through the light entrance surface, and the light emits out of the light guide plate from the light exit surface. The optical film covers the light exit surface of the light guide plate. | 05-23-2013 |
20140268806 | Backlight Module with Composite Reflective Surface - A backlight module includes a reflective bottom surface, a light-exit top surface, and a light source module. The reflective bottom surface has a light-entrance side and the light source module is disposed along the light entrance side. The light-exit top surface is disposed opposite to the reflective bottom surface and sandwiches a mezzanine space with the reflective bottom surface. Light generated from the light source module enters the mezzanine space through the light-entrance side and is reflected by the reflective bottom surface to the light-exit top surface. The reflective bottom surface includes at least one first reflective surface and at least one second reflective surface arranged in intervals along an extending direction of the light-entrance side. A specular reflection ratio of the first reflective surface is greater than the specular reflection ratio of the second reflective surface. | 09-18-2014 |
Patent application number | Description | Published |
20090231310 | GATE DRIVER-ON-ARRAY AND METHOD OF MAKING THE SAME - A gate driver-on-array structure integrated into a display includes a substrate and a gate driver structure formed thereon. The gate driver structure is disposed in a peripheral region of the substrate. The gate driver structure includes a first layer metal pattern, a second layer metal pattern, and an insulating layer disposed therebetween. The first layer metal pattern includes connection nodes. The insulating layer has through holes exposing the connection nodes. The second layer metal pattern fills into the through holes and in contact with the connection nodes of the first layer metal pattern so as to implement necessary electrical connection of the gate driver structure. | 09-17-2009 |
20090261339 | GATE DRIVER ON ARRAY OF A DISPLAY AND METHOD OF MAKING DEVICE OF A DISPLAY - In a method of making device of a display, an insulating layer, a semiconductor layer, an ohmic contact layer, a second conductive layer, and a photoresist pattern are consecutively formed on a first conductive structure. The photoresist pattern includes a first thickness region, and a second thickness region outside the first thickness region. The thickness of the second thickness region is smaller than that of the first thickness region. In addition, in a gate driver on array (GOA) of a display, it includes a gate driver on array structure with a pull-down transistor. The pull-down transistor has a gate electrode, a semiconductor island, a source electrode and a drain electrode. The semiconductor island extends out of the edges of the gate electrode, the source electrode, and the drain electrode. | 10-22-2009 |
20110018001 | GATE DRIVER ON ARRAY OF A DISPLAY - A gate driver on array of a display includes a substrate having a peripheral region, and a gate driver on array structure formed in the peripheral region. The gate driver on array structure includes a pull-down transistor, and the pull-down transistor has a gate electrode, an insulating layer, a semiconductor island, a source electrode, and a drain electrode. The semiconductor island extends out of both edges of the gate electrode, and extends out of an edge of the source electrode and an edge of the drain electrode. | 01-27-2011 |
20120008081 | COMMON LINE STRUCTURE AND DISPLAY PANEL AND METHOD OF MAKING THE SAME - A method of forming a common line structure of a display panel includes the following steps. First, provide a substrate, wherein at least one first common section and at least one second common section are disposed on the substrate. Then, form a passivation layer on the substrate, the first common section, and the second common section. Subsequently, form at least one through hole penetrating the passivation layer to at least partially expose the first common section and the second common section. Thereafter, form a connection section on the passivation layer to electrically connect the first common section and the second common section exposed by the through hole. | 01-12-2012 |
Patent application number | Description | Published |
20100136221 | METHOD OF FABRICATING PIXEL STRUCTURE - A method of fabricating a pixel structure for use in an electroluminescent panel includes the following steps. A substrate is provided. Three shadow masks having a plurality of first, second, and third openings patterned in an array of T shaped are respectively provided, and three evaporation processes using the three shadow masks are subsequently performed to form a plurality of first subpixel units, second subpixel units and third subpixel units respectively. One first subpixel of the first subpixel unit, one second subpixel of the second subpixel unit adjacent to the first subpixel unit, and one third subpixel of the third subpixel unit adjacent to the first subpixel unit form a display pixel unit. | 06-03-2010 |
20110084953 | ORGANIC LIGHT EMITTING DISPLAY HAVING A POWER SAVING MECHANISM - An organic light emitting display having a power saving mechanism includes a first power module for generating a first power voltage, a second power module for generating a second power voltage, a gate driving circuit for generating a scan signal, a data driving circuit for generating a data signal, a pixel circuit, a ripple detection unit and a processing unit. The ripple detection unit detects the ripple of the first power voltage for generating a detection voltage. The processing unit generates a power-saving control signal according to the detection voltage. The pixel circuit employs the scan and data signals to control a light-emitting driving operation based on the voltage difference between the first and second power voltages. When the power-saving control signal is greater than a threshold, the first power module adjusts the first power voltage for reducing the voltage difference so as to save power consumption. | 04-14-2011 |
20110169798 | Active Matrix Organic Light Emitting Diode (OLED) Display, Pixel Circuit and Data Current Writing Method Thereof - An exemplary active matrix organic light emitting diode (OLED) display includes a data line, a current sensing line, a power line and a plurality of pixels all electrically coupled to the data line, the current sensing line and the power line. During a data current is writing to a selected one of the pixels, the selected pixel draws a current from the current sensing line, and the data line supplies a particular data voltage to the selected pixel according to the drawn current from the current sensing line until the drawn current matched with the data current; the other non-selected pixels draw currents from the power line for light-emission. Moreover, a pixel circuit and a data current writing method adapted for the above-mentioned active matrix OLED display also are provided. | 07-14-2011 |
20110285297 | DRIVING CIRCUIT USED FOR CURRENT-DRIVEN DEVICE AND LIGHT EMITTING DEVICE - A driving circuit is adapted to drive a current-driven device. The driving circuit includes a first power supply circuit and a second power supply circuit. The first power supply circuit is for supplying a first positive voltage to a first terminal of the current-driven device. The second power supply circuit is for enabling a current flowing along a first current flow direction in a first time period and thereby a second terminal of the current-driven device is given a second positive voltage. The second power supply circuit further is for enabling a current from the current-driven device flowing out of the second power supply circuit along a second current flow direction. The first current flow direction and the second current flow direction are different directions in the second power supply circuit. Moreover, a light emitting device using the above-mentioned driving circuit also is provided. | 11-24-2011 |
20120086694 | PIXEL CIRCUIT AND DISPLAY PANEL WITH IR-DROP COMPENSATION FUNCTION - A pixel circuit and a display panel with an IR-drop compensation function are disclosed. The display panel includes multiple pixel circuits and multiple compensation circuits. Each of the pixel circuits includes a detecting switch. After a real work voltage of a pixel circuit is transmitted to a corresponding compensation circuit through a corresponding detecting switch, a data transmitted to the pixel circuit is adjusted by the compensation circuit according to a relationship between the real work voltage and an original work voltage. | 04-12-2012 |
20130070006 | METHOD OF USING A PIXEL TO DISPLAY AN IMAGE - A first sub-pixel, a second sub-pixel and a third sub-pixel of a pixel are utilized to display a first white image, then a first brightness of the first sub-pixel and a first brightness of the second sub-pixel are measured. The first sub-pixel, the second sub-pixel and a fourth sub-pixel of the pixel are utilized to display a second white image, then a second brightness of the first sub-pixel and a second brightness of the second sub-pixel are measured. How image data should be displayed is determined according to whether the first brightness of the first sub-pixel is greater than the second brightness of the first sub-pixel, whether the first brightness of the second sub-pixel is greater than the second brightness of the second sub-pixel, and whether a chromaticity coordinate of the image data is within a chromaticity range capable of being displayed by the first, second and third sub-pixels. | 03-21-2013 |
Patent application number | Description | Published |
20120001095 | LIGHT SOURCE APPARATUS FOR FLUORESCENCE PHOTOGRAPHY - A light source apparatus for fluorescence photography of biomolecule sample gels is disclosed. The light source apparatus comprises a housing, a transparent plate disposed in a light transmission zone at the top of the housing, and at least one LED array disposed in the housing out of the range of the light transmission zone. The LED array irradiates obliquely to the light transmission zone for preventing the light spots from interfering in the observation. Each of LED array may comprises different colors of LEDs for different biomolecule samples. | 01-05-2012 |
20120009088 | HIGH-PERFORMANCE LIGHT SOURCE APPARATUS FOR FLUORESCENCE PHOTOGRAPHY - A high-performance light source apparatus for fluorescence photography of biomolecule sample gels is disclosed. The high-performance light source apparatus comprises a base frame, a supporting region located on the center of the top surface of the base frame for supporting a biomolecule sample gel, and at least one light-emitting module disposed on the top surface of the base frame around the supporting region for emitting an exciting light onto the biomolecule sample gel laterally. Each light-emitting module comprises an LED array having different colors of LEDs for different bio reagents. The exciting light is projected onto the biomolecule sample gel laterally, such that the size of the high-performance light source apparatus can be minimized, and the light spots interference in fluorescence photographing or observation can be prevented. | 01-12-2012 |
20120017633 | COOLING DEVICE - The present invention relates to a cooling device, mainly comprises a carrying unit, a thermal insulation unit, and a temperature-lowering module. The thermal insulation unit is provided over a part of surface of the carrying unit for blocking heat transmission between the carrying unit and the outside. As the carrying unit is placed on the temperature-lowering module, a cooling chip in the temperature-lowering module is able to lower the temperature of the carrying unit and a biological sample. Furthermore, the thermal insulation unit is able to maintain the temperature of the carrying unit and biological sample, when the carrying unit is removed from the temperature-lowering module. Thereafter, a user can conveniently practice observation and experiment with respect to the biological sample, and avoid damaging the biological sample during experiment or transportation by the use of the cooling device. | 01-26-2012 |
20120043212 | REAL-TIME FLUORESCENT ELECTROPHORESIS APPARATUS - A real-time fluorescent electrophoresis apparatus, comprising: an electrophoresis tank comprising a platform, an electrophoresis liquid, a positive electrode and a negative electrode, the platform carrying a gel with a biological sample, the gel comprising a plurality of charged molecules of the biological sample, and the gel, the platform, the positive electrode and the negative electrode being immersed in the electrophoresis liquid; and a lid covering the electrophoresis tank and comprising a filter disposed above the gel and at least one luminous element disposed on at least one side of the filter to irradiate the gel so that the biological sample in the gel is excited to fluoresce. Thereby, the experimenter is able to observe fluorescence phenomenon from the biological sample during electrophoresis so as to trace the electrophoresis process and determine whether the electrophoresis process is to be interrupted and avoid experimental errors. | 02-23-2012 |