Patent application number | Description | Published |
20140124829 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode. | 05-08-2014 |
20140124830 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first and second trench gate electrodes. The first trench gate electrodes are separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel is formable between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrodes. An enhancement layer separates the base layer from the drift layer. The second trench gate electrode is separated from the base layer, the enhancement layer and the drift layer by a third insulating layer. | 05-08-2014 |
20140124831 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel exits between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrode. An enhancement layer separates the base layer from the drift layer in a plane parallel to the emitter side. A grounded gate electrode includes a second, grounded trench gate electrode and an electrically conducting layer. | 05-08-2014 |
20140370665 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWER SEMICONDUCTOR DEVICE - A method for manufacturing a power semiconductor device is disclosed which can include: providing a wafer of a first conductivity type; and applying on a second main side of the wafer at least one of a dopant of the first conductivity type for forming a layer of the first conductivity type and a dopant of a second conductivity type for forming a layer of the second conductivity type. A Titanium layer with a metal having a melting point above 1300° C. is then deposited on the second main side. The Titanium deposition layer is annealed so that simultaneously an intermetal compound layer is formed at the interface between the Titanium deposition layer and the wafer and the dopant is diffused into the wafer. A first metal electrode layer is created on the second main side. | 12-18-2014 |
Patent application number | Description | Published |
20090159215 | TIRE CURING BLADDER - An expandable bladder for shaping a pneumatic tire is provided. The bladder in an unmounted, relaxed state has a shaped body having a pair of opposed annular beads, said body further comprising a central portion, sidewall portions, and shoulder portions interposed between the central portion and the sidewall portions, wherein the body is defined by an outer contour surface and an inner contour surface, wherein the central portion has gauge which increases to a maximum value axially inward of the shoulder portion, and wherein the bladder gauge in the shoulder is less than the maximum value, and wherein the bladder gauge increases from the shoulder to the bead. | 06-25-2009 |
20100147436 | TIRE WITH CHAFER - The present invention relates to a pneumatic tire having a pair of spaced apart bead components, a connecting carcass between said bead components, and a rubber chafer positioned around at least a portion of each of said bead components and intended for contacting a rigid rim of a wheel, wherein said chafer comprises an outer skin layer intended for contacting the rigid rim and an inner core layer disposed radially inward of the skin layer. | 06-17-2010 |
20100154948 | TIRE TREAD WITH GROOVE REINFORCEMENT - A tire has an axis of rotation. The tire includes two sidewalls extending radially outward and a tread disposed radially outward of the two sidewalls and interconnecting the two sidewalls. The tread includes a main portion comprising a first compound and a reinforcing structure comprising a second compound having reinforcing short fibers oriented between −20 degrees to +20 degrees to a circumferential direction of the tread. The main portion of the tread includes at least one circumferential groove separating circumferential ribs. Each circumferential groove has two sides and a base therebetween. The reinforcing structure includes a layer of the second compound secured to the sides of each circumferential groove. | 06-24-2010 |