Patent application number | Description | Published |
20090016205 | Optical Recording Medium and Method for Reproducing Information From Optical Recording Medium - An optical recording medium includes a substrate, a first dielectric layer, a recording layer, a second dielectric layer, a super-resolution layer, and a third dielectric layer, which are provided in that order. The super-resolution layer is formed of a material configured such that voids are generated when the material is irradiated with DC light at a predetermined irradiation power for 1 to 300 seconds. Therefore, super-resolution reproduction can be made such that the irradiation power of a readout laser beam does not depend on the size of a recording mark. | 01-15-2009 |
20090269542 | OPTICAL RECORDING MEDIUM - An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability. | 10-29-2009 |
20090323071 | OPTICAL MEASUREMENT APPARATUS AND OPTICAL MEASUREMENT METHOD FOR A LIQUID OR MOLTEN MATERIAL - An apparatus for optical measurement of a liquid or molten material, which has: a transparent container which has a bottom face and is capable of containing a to-be-measured material therein, with the bottom face at least having a flat face and being transparent; and an optical device that irradiates a light to the bottom face of the container and that detects and measures a reflected light from the bottom face; and a method for optically measuring a liquid or molten material using the apparatus. | 12-31-2009 |
20100055397 | MOLD FOR OPTICAL DEVICE WITH ANTI-REFLECTION STRUCTURE, METHOD FOR PRODUCING THE SAME, AND OPTICAL DEVICE - A process for producing through simple operations a molding die for optical device having an antireflective structure of nano-order microscopic uneven plane on a substratum surface. The molding die for optical device having microscopic uneven plane (antireflective structure die plane) on a surface of substratum is produced by a process comprising forming one or more etching transfer layers on substratum; forming thin film for formation of semispherical microparticles on the etching transfer layers; causing the thin film to undergo aggregation, or decomposition, or nucleation of the material by the use of any of thermal reaction, photoreaction and gas reaction or a combination of these reactions so as to form multiple semispherical island-like microparticles; and using the multiple islandlike microparticles as a protective mask, carrying out sequential etching of the etching transfer layers and substratum by reactive gas to thereby form a conical pattern on the microscopic surface of the substratum. | 03-04-2010 |
20100075114 | MOLD FOR OPTICAL ELEMENT, HAVING NANOSTRUCTURE, MOLD FOR NANOSTRUCTURE, METHOD FOR MANUFACTURING THE MOLD, AND OPTICAL ELEMENT - This invention provides a method for manufacturing a mold for an optical element having a nanostructure of nano-order fine depressions and elevations on a surface of a substrate. The method includes: forming at least one etching transfer layer on the substrate, and forming a thin film for hemispherical fine particle formation on the etching transfer layer; forming multiple hemispherical island-shaped fine particles, with any of thermal-, photo- and gas reactions or combination thereof to cause any of aggregation, decomposition and nucleation functions of a material of the thin film; and forming a conical pattern on the fine surface of the substrate, by successively etching the etching transfer layer and the substrate with a reactant gas, using the multiple island-shaped fine particles as a protective mask, thereby manufacturing a mold for an optical element having fine depressions and elevations or a nanostructure mold face on the surface of the substrate. | 03-25-2010 |
20100091639 | OPTICAL RECORDING MEDIUM FOR PERFORMING SUPER RESOLUTION REPRODUCTION AND OPTICAL RECORDING AND REPRODUCTION METHOD THEREOF - The invention performs super resolution reproduction with a recording layer and a signal reproducing functional layer laminated on a grooved substrate. A length of a mark recorded in a Mark Position method is only one length that is less than the resolution limit in an optical system to be used, and recording marks are formed both on a land and in a groove of the grooved substrate. | 04-15-2010 |
20100142362 | HIGH DENSITY OPTICAL DISK AND REPRODUCTION/TRACKING CONTROL METHOD - When a method for increasing density by providing a tracking guide such as a land/groove and introducing a plurality of strings of super-resolution pits into one track thereof is applied to a reproduction-dedicated optical disk, there are problems in that the production cost is increased, the structure is complicated, and the space which can be used for a recording pits is narrowed because of the land/groove structure. | 06-10-2010 |
20100167015 | ETCHING RESIST - An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor. | 07-01-2010 |
20100181548 | SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE - A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb | 07-22-2010 |
20110315942 | SOLID-STATE MEMORY - A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently. | 12-29-2011 |
20120256104 | PHASE CHANGE DEVICE HAVING PHASE CHANGE RECORDING FILM, AND PHASE CHANGE SWITCHING METHOD FOR PHASE CHANGE RECORDING FILM - Allow the rate of phase change to be controlled at the time period of phonons (approx. 270 fs) for the purpose of achieving a substantially higher recording-erasing speed compared to what can be achieved with conventional technologies relating to optical recording media using phase change. A femtosecond pulse laser is shaped into pulse trains each having a first pulse and a second pulse using a Michelson interferometer, and the time interval of first and second pulses is matched with the time period of lattice vibration of a material constituting the phase change recording film to be irradiated, thereby inducing phase change. | 10-11-2012 |
20120300305 | MOLD FOR OPTICAL DEVICE WITH ANTI-REFLECTION STRUCTURE, METHOD FOR PRODUCING THE SAME, AND OPTICAL DEVICE - A process for producing through simple operations a molding die for optical device having an antireflective structure of nano-order microscopic uneven plane on a substratum surface. The molding die for optical device having microscopic uneven plane (antireflective structure die plane) on a surface of substratum is produced by a process comprising forming one or more etching transfer layers on substratum; forming thin film for formation of semisperical microparticles on the etching transfer layers; causing the thin film to undergo aggregation, or decomposition, or nucleation of the material by the use of any of thermal reaction, photoreaction and gas reaction or a combination of these reactions so as to form multiple semispherical islandlike microparticles; and using the multiple island like microparticles as a protective mask, carrying out sequential etching of the etching transfer layers and substratum by reactive gas to thereby form a conical pattern on the microscopic surface of the substratum. | 11-29-2012 |
20130279247 | SOLID MEMORY - Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 10 | 10-24-2013 |
20130286725 | SOLID MEMORY - Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 10 | 10-31-2013 |