Patent application number | Description | Published |
20100258816 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100258817 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100261333 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
Patent application number | Description | Published |
20080270806 | Execution Device - An execution device executes an application program created in an object-oriented language. An application includes one or more classes that each have one or more methods, and confidentiality information that expresses whether or not confidentiality is necessary. The execution device determines whether or not encryption is necessary, with reference to the confidentiality information, and when the method is to be executed, records, in a memory, an object including data that the method manipulates. When it is determined that encryption is necessary, the object is recorded with the data encrypted. | 10-30-2008 |
20100074594 | STEREOSCOPIC VIDEO PLAYBACK DEVICE AND STEREOSCOPIC VIDEO DISPLAY DEVICE - A video plane generation unit decodes stream data into a pair of left-view and right-view video planes, and outputs the pair alternately in a 3D display mode and either of the pair repeatedly in a pseudo 2D display mode. An image plane generation unit generates a pair of left-view and right-view image planes having an OSD at different horizontal locations according to its depth to be perceived, and alternately output the pair of image planes. A pseudo 2D display control unit instructs the video plane generation unit to operate in the 3D display mode and the pseudo 2D display mode in periods where the image plane generation unit does not and does output the image planes, respectively. The adder unit combines a video plane and an image plane generated by the video plane generation unit and the image plane generation unit, respectively, onto a frame, and outputs the frame. | 03-25-2010 |
20100104262 | PLAYBACK APPARATUS, PLAYBACK METHOD, AND PLAYBACK PROGRAM FOR PLAYING BACK STEREOSCOPIC VIDEO CONTENTS - To provide a playback apparatus | 04-29-2010 |
20100146304 | EXECUTION DEVICE - A program execution device is a device for executing an application program having at least one class including an execution code created by an object directivity language. The program execution device includes a first execution device having a memory and a processor and a tamper-resistant second execution device having a memory and a processor. When a class is executed, a loader loads an execution code of the class in the memory of the second execution device and loads a portion of the class other than the execution code loaded in the memory of the second execution device, in the memory of the first execution device. | 06-10-2010 |
20140059590 | BROADCAST RECEIVING APPARATUS, BROADCAST RECEIVING METHOD, AND PROGRAM - A broadcast receiving apparatus capable of changing a layout of broadcast and communication content items includes: a communication content item receiving unit receiving the communication content item distributed through communication; a broadcast content item receiving unit receiving the broadcast content item; a plane for holding a picture of a broadcast video represented by the broadcast content item, and a picture of a communication video represented by the communication content item; a layout information obtaining unit obtaining layout information indicating a layout of the broadcast and communication videos; and a superimposing unit superimposing the picture of the broadcast video and the picture of the communication video held in the plane, according to the layout information for each set of the pictures, and outputting an image in which the picture of the broadcast video and the picture of the communication video are superimposed. | 02-27-2014 |
20140090007 | BROADCAST RECEIVING APPARATUS, PLAYBACK APPARATUS, BROADCAST COMMUNICATION SYSTEM, BROADCAST RECEIVING METHOD, PLAYBACK METHOD AND PROGRAM - A broadcast receiving apparatus capable of playing back, with another apparatus, a broadcast content item and a communication content item in synchronization with each other is a broadcast receiving apparatus that receives a broadcast content item to be broadcast, and includes: a first information obtaining unit configured to obtain synchronization information for playing back, in synchronization with playback of the broadcast content item, a communication content item to be distributed through communication other than broadcasting; an information notifying unit configured to notify a playback apparatus that plays back the communication content item of the synchronization information; and a broadcast receiving and playback unit configured to receive and play back the broadcast content item. | 03-27-2014 |
20140143313 | CLIENT TERMINAL, SERVER, AND DISTRIBUTED PROCESSING METHOD - If an execution target application is an application with a high load for a client terminal ( | 05-22-2014 |
Patent application number | Description | Published |
20080287128 | Server - A service processing server for providing a communication processing service with an information providing server, to a cell phone belonging to a network capable of identifying subordinate cell phones, and including an application receiving part for receiving first communication terminal-specific information to specify a specific cell phone, and service-specific information in association with each other; a specific information generating part for generating second communication terminal-specific information; an approval requesting part for transmitting approval request information containing the service-specific information and the second communication terminal-specific information, to the information providing server; a result receiving part for receiving approval result information returned; and a registering part for performing a registration process for providing the communication processing service to the specific cell phone in accordance with reception of the approval result information. | 11-20-2008 |
20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
20090096053 | Schottky Barrier Semiconductor Device and Method for Manufacturing the Same - A silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height is controlled to a desired value in a range where power loss is minimized without increasing the n factor. The method for manufacturing the silicon carbide Schottky barrier semiconductor device includes the steps of depositing Ta on a crystal face of an n-type silicon carbide epitaxial film, the crystal face having an inclined angle in the range of 0° to 10° from a (000-1) C face, and carrying out a thermal treatment at a temperature range of 300 to 1200° C. to form the Schottky electrode. | 04-16-2009 |
20090243026 | Schottky Barrier Diode and Method for Using the Same - An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. | 10-01-2009 |
Patent application number | Description | Published |
20090073243 | PRESSURE-REGULATING VALVE, FUNCTIONAL LIQUID SUPPLYING APPARATUS, IMAGING APPARATUS, METHOD OF MANUFACTURING ELECTRO-OPTIC DEVICE, ELECTRO-OPTIC DEVICE, AND ELECTRONIC APPARATUS - In a pressure-regulating valve which supplies a functional liquid from a functional liquid tank to a functional liquid droplet ejection head, using, as a reference regulating pressure, atmospheric pressure which a diaphragm receives, a valve-disc energizing spring, which energizes a valve disc for opening and closing a communication passage communicating a primary chamber and a secondary chamber, is configured so as to be separated from a housing main body along with a lid body. | 03-19-2009 |
20090168056 | PATTERN FORMATION DEVICE - A pattern formation device is for forming a pattern on a substrate includes first and second foreign matter detection sensors. Each of the first and second foreign matter detection sensors includes a light projecting unit and a light receiving unit disposed across a transport path of the substrate from the first light projecting unit. The light projecting unit is configured and arranged to emit a detection light along an upper surface of the substrate. The light receiving unit being configured and arranged to receive the detection light to detect foreign matter on the substrate based on an amount of the detection light received by the light receiving unit. The light projecting units of the first and second foreign matter detection sensors are disposed on opposite sides of the transport path. | 07-02-2009 |
20140063092 | INKJET RECORDING APPARATUS - To provide an inkjet recording apparatus in a simple configuration that can accurately adjust a gap between a nozzle surface of an inkjet head and a recording medium placed on a feed route with simple operations, it is provided with a printing section having an inkjet head and performing printing on a recording medium, an apparatus main body having a pair of side frames that supports the printing section so as to stand the inkjet head face to face with the recording medium and a medium feed mechanism that feeds the recording medium along a feed route, and a gap adjustment section moving the printing section in parallel with respect to the pair of side frames in a separate direction and adjusting a gap between the nozzle surface of the inkjet head and the recording medium placed on the feed route. | 03-06-2014 |
20150070431 | RECORDING DEVICE - The recording device includes an adhesive belt extending across a plurality of rotating bodies configured to support and convey a recording medium, a first sensor configured to detect that the recording medium is separated relative to the adhesive belt in a first range, a second sensor configured to detect that the recording medium P is separated relative to the adhesive belt in a second range within the first range, a take-up unit configured to take up the recording medium, and a control unit configured to control the take-up unit so as to take up the recording medium when the first sensor detects that a separation position of the recording medium is within the first range, and control the rotating body to stop movement of the adhesive belt when the second sensor detects that the separation position of the recording medium is within the second range. | 03-12-2015 |
Patent application number | Description | Published |
20120307249 | APPARATUS FOR INSPECTING INTEGRATED CIRCUIT - An apparatus for inspecting an integrated circuit is an apparatus for inspecting an integrated circuit having a semiconductor substrate and a circuit portion formed on a front face a side of the semiconductor substrate. The apparatus comprises a light generation unit for generating light L for irradiating the integrated circuit, a wavelength width adjustment unit, for adjusting the wavelength width of the light irradiating the integrated circuit, an irradiation position adjustment unit for adjusting the irradiation position of the light irradiating the integrated circuit, and a light detection unit for detecting the light from the integrated circuit when the light from the light generation unit irradiates the circuit portion through a rear face of the semiconductor substrate. | 12-06-2012 |
20130082260 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INSPECTION METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The plurality of inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction. | 04-04-2013 |
20130087788 | DETECTION METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction. | 04-11-2013 |
20130120563 | IMAGE GENERATION DEVICE - An image generation device | 05-16-2013 |
20140111848 | OPTICAL DEVICE FOR MICROSCOPIC OBSERVATION - An optical device for microscopic observation | 04-24-2014 |
20140169403 | HEAT GENERATION POINT DETECTION METHOD AND HEAT GENERATION POINT DETECTION DEVICE - A heat generation point detection method comprises steps S | 06-19-2014 |
20140294038 | METHOD FOR DETECTING HEAT GENERATION POINTS AND DEVICE FOR DETECTING HEAT GENERATE POINTS - A heat generation point detection method comprises: step of stabilizing an average temperature of a surface of an integrated circuit S; steps of applying a bias voltage of a low frequency to the integrated circuit S and acquiring a heat generation detection signal detected from the integrated circuit S in response thereto; steps of supplying a bias voltage of a high frequency and acquiring a heat generation detection signal detected in response thereto; steps of detecting a phase shift between the bias voltage of the low frequency and the heat generation detection signal and a phase shift between the bias voltage of the high frequency and the heat generation detection signal; and step of calculating a change rate of the phase shift against a square root of the frequency of the bias voltage, and obtaining depth information of the heat generation point from the change rate. | 10-02-2014 |