Patent application number | Description | Published |
20080297274 | CAPACITIVE/RESISTIVE DEVICES, ORGANIC DIELECTRIC LAMINATES AND PRINTED WIRING BOARDS INCORPORATING SUCH DEVICES, AND METHODS OF MAKING THEREOF - This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode; a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0. | 12-04-2008 |
20100037941 | COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES - Methods and compositions for making photovoltaic devices are provided. A metal that is reactive with silicon is placed in contact with the n-type silicon layer of a silicon substrate. The silicon substrate and reactive metal are fired to form a silicide contact to the n-type silicon layer. A conductive metal electrode is placed in contact with the silicide contact. A silicon solar cell made by such methods is also provided. | 02-18-2010 |
20100037942 | COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES - Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof. | 02-18-2010 |
20100037951 | MULTI-ELEMENT METAL POWDERS FOR SILICON SOLAR CELLS - Disclosed are methods of making multi-element, finely divided, metal powders containing one or more reactive metals and one or more non-reactive metals. Reactive metals include metals or mixtures thereof from titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), vanadium (V), nickel (Ni), cobalt (Co), molybdenum (Mo), manganese (Mn), and iron (Fe). Non-reactive metals include metals or mixtures such as silver (Ag), tin (Sn), bismuth (Bi), lead (Pb), antimony (Sb), zinc (Zn), germanium (Ge), phosphorus (P), gold (Au), cadmium (Cd), berrylium (Be), tellurium (Te). | 02-18-2010 |
20100073845 | THIN FILM CAPACITORS ON METAL FOILS AND METHODS OF MANUFACTURING SAME - Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650° C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C. | 03-25-2010 |
20100154875 | COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES - Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, berrylium, and combinations thereof. | 06-24-2010 |
20120085401 | PROCESSES AND COMPOSITIONS FOR FORMING PHOTOVOLTAIC DEVICES WITH BASE METAL BUSS BARS - A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed. | 04-12-2012 |
20130000709 | PHOTOVOLTAIC DEVICE ELECTRICAL CONTACTS - Photovoltaic cells including silicon solar cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof. | 01-03-2013 |
20130160812 | BACK CONTACT PHOTOVOLTAIC MODULE WITH INTEGRATED GLASS BACK-SHEET - A back-contact solar cell module comprises an array of back-contact solar cells having a substantially common coefficient of thermal expansion and a glass back-sheet having a coefficient of thermal expansion that is within 15% of the coefficient of thermal expansion of the solar cells of the solar cell array. The glass back-sheet has at least two conductive circuits formed of sintered metal and glass on a surface of the glass back-sheet. Electrical contacts on the back side of the solar cells of the solar cell array are physically and electrically connected to the conductive circuits formed on the glass back-sheet. Processes for making such back-contact solar cell modules are also provided. | 06-27-2013 |
20130180583 | CONDUCTIVE PASTE FOR FINE-LINE HIGH-ASPECT-RATIO SCREEN PRINTING IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - This invention relates to thick film conductive paste comprised of one or more electrically conductive powders, one or more glass fits, and an organic medium comprising solvent and cellulose ester resin. This paste enables fine line printing in the manufacture of soar cells and exhibits reduced line spreading during the drying and firing steps. Paste stability is also improved. Also provided is a semiconductor device comprising an electrode formed from the thick film conductive paste. | 07-18-2013 |
20140174527 | PHOTOVOLTAIC DEVICES WITH BASE METAL BUSS BARS - A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed. | 06-26-2014 |