Patent application number | Description | Published |
20080236875 | WIRING STRUCTURE AND METHOD OF FORMING THE SAME - A CNT bundle is formed by growing a plurality of CNTs from opposing surfaces of contact blocks toward mutual opposing surfaces, and by contacting the CNTs so that they intersect to electrically connect with each other. Subsequently, a gap of the electrically connected CNT bundle is filled with a metal material, to thereby form a wiring being a composite state of the CNT bundle and the metal material. | 10-02-2008 |
20080248945 | SUBSTRATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME - After a titanium nitride (TiN) thin film is formed on a silicon substrate, cobalt (Co) fine particles and nickel (Ni) fine particles are deposited in a mixed state on the titanium nitride (TiN) thin film, and CNTs are sequentially grown from the cobalt (Co) fine particles and the nickel fine particles by varying growth conditions. | 10-09-2008 |
20090035209 | METHOD OF MANUFACTURING CARBON NANOTUBE - According to a method of manufacturing carbon nanotubes, minute concavities and convexities are formed at a surface of a substrate, a catalyst metal layer having a predetermined film thickness is formed on the surface having the concavities and convexities, the substrate is subject to a heat treatment at a predetermined temperature to change the catalyst metal layer into a plurality of isolated fine particles. The catalyst metal fine particles have a uniform particle diameter and uniform distribution. Then, the substrate supporting the plurality of fine particles is placed in a carbon-containing gas atmosphere to grow carbon nanotubes on the catalyst metal fine particles by a CVD method using the carbon-containing gas. The carbon nanotubes can be formed to have a desired diameter and a desired shell number with superior reproducibility. | 02-05-2009 |
20090065765 | CARBON NANOTUBE GROWN ON CATALYST AND MANUFACTURE METHOD - A method for manufacturing carbon nanotubes includes the steps of: (a) depositing catalytic fine particles containing Al—Fe, Zr—Co or Hf—Co on a base body; and (b) growing carbon nanotubes on the catalytic fine particles deposited on the base body. | 03-12-2009 |
20090237886 | SHEET STRUCTURE AND METHOD OF MANUFACTURING SHEET STRUCTURE - The sheet structure includes a plurality of linear structures of carbon atoms, a filling layer filled in gaps between the linear structures for supporting the plurality of linear structures, and a coating film formed over at least one ends of the plurality of linear structures and having a thermal conductivity of not less than 1 W/m·K. | 09-24-2009 |
20090291216 | Carbon nanotube device and manufacturing method of the same - After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiO | 11-26-2009 |
20100027221 | SHEET STRUCTURE AND METHOD OF MANUFACTURING THE SAME - The sheet structure includes a plurality of linear structure bundles | 02-04-2010 |
20100124025 | HEAT RADIATION MATERIAL, ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - The electronic device includes a heat generator | 05-20-2010 |
20100327444 | SHEET STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF GROWING CARBON STRUCTURE - The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer. | 12-30-2010 |
20120040523 | BUNDLE OF LONG THIN CARBON STRUCTURES, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE - In the bundle of long thin carbon structures of the present invention, end parts of the bundle are interconnected in a carbon network. The interconnected end parts form a flat surface. By this, an electrical connection structure with low resistance and/or a thermal connection structure with high thermal conductivity are obtained. The bundle of long thin carbon structures can be used suitably as a via, heat removal bump or other electronic element. | 02-16-2012 |
20120042922 | GRAPHITE STRUCTURE, ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING ELECTRONIC COMPONENT - The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other. | 02-23-2012 |
20120199815 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film ( | 08-09-2012 |
20120218713 | HEAT RADIATION MATERIAL, ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - The electronic device includes a heat generator | 08-30-2012 |
20120295078 | SHEET STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF GROWING CARBON STRUCTURE - The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer. | 11-22-2012 |
20120325454 | HEAT DISSIPATING STRUCTURE AND MANUFACTURE THEREOF - A heat dissipating structure includes a heat source; a heat dissipating part disposed to oppose to the heat source; a concave portion formed in at least one of opposing surfaces of the heat source and the heat dissipating part; and a heat conducting structure comprising a filler layer of thermoplastic material disposed between the heat source and the heat dissipating part and contacting with the opposing surfaces of the heat source and the heat dissipating part, and an assembly of carbon nanotubes that are distributed in the thermoplastic material, oriented perpendicularly to the surfaces of the filler layer, contacting, at both ends, with the opposing surfaces of the heat source and the heat dissipating part, and limited its distribution in the opposing surfaces by the concave portion. | 12-27-2012 |