Patent application number | Description | Published |
20090175087 | METHOD OF VERIFYING PROGRAMMING OPERATION OF FLASH MEMORY DEVICE - A method is provided for verifying a programming operation of a flash memory device. The flash memory device includes at least one memory string in which a string selection transistor, multiple memory cells and a ground selection transistor are connected in series, and the programming operation is performed with respect to a selected memory cell in the memory string. The method includes applying a voltage, obtained by adding a threshold voltage of the string selection transistor to a power supply voltage, to a string selection line connected to the string selection transistor; applying a ground voltage to wordlines connected to each of the memory cells and a ground selection line connected to the ground selection transistor; precharging a bitline connected to the memory string to the power supply voltage; and determining whether a programming operation of the selected memory cell is complete. | 07-09-2009 |
20110131367 | NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE, AND WEAR LEVELING METHOD FOR NONVOLATILE MEMORY DEVICE - A nonvolatile memory device comprises a memory core and a controller for controlling the wear level of a memory block in the nonvolatile memory device. The controller determines the wear level of a memory block by obtaining data of an actual wear level from a charge measurement cell of a selected region of the memory cell, and stores the wear level of the selected region in an erase count table. | 06-02-2011 |
20110235415 | READ METHOD FOR NONVOLATILE MEMORY DEVICE, AND DATA STORAGE SYSTEM USING THE SAME - Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step. | 09-29-2011 |
20140063945 | READ METHOD FOR NONVOLATILE MEMORY DEVICE, AND DATA STORAGE SYSTEM USING THE SAME - Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step. | 03-06-2014 |