Patent application number | Description | Published |
20090140801 | Locally gated graphene nanostructures and methods of making and using - A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described. | 06-04-2009 |
20110038198 | ELECTRONIC DEVICES BASED ON CURRENT INDUCED MAGNETIZATION DYNAMICS IN SINGLE MAGNETIC LAYERS - The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters. | 02-17-2011 |
20140193626 | TRANSPARENT CONDUCTOR - A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer. | 07-10-2014 |
20140233297 | Graphene Ferroelectric Device and Opto-Electronic Control of Graphene Ferroelectric Memory Device - In accordance with an embodiment of the invention, there is provided a graphene ferroelectric device. The device comprises a graphene transistor channel and a ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising a linear polarization at a first applied gate voltage less than a threshold voltage, and a hysteretic polarization at a second applied gate voltage greater than the threshold voltage. The device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and a low resistance state in response to photoillumination of the device. | 08-21-2014 |
20150075602 | PHOTOVOLTAIC CELL WITH GRAPHENE-FERROELECTRIC ELECTRODE - A photovoltaic cell ( | 03-19-2015 |
20150085424 | SYNTHESIS OF THREE-DIMENSIONAL GRAPHENE FOAM: USE AS SUPERCAPACITORS - The invention relates to three-dimensional crystalline foams with high surface areas, high lithium capacity, and high conductivity for use as electrode materials and methods for their fabrication. In additional embodiments, the invention also relates to the use of three-dimensional crystalline foams as supercapacitors for improved charge and energy storage. | 03-26-2015 |