Patent application number | Description | Published |
20150263109 | Contact Silicide Having a Non-Angular Profile - A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process. | 09-17-2015 |
20150279954 | BARRIER LAYER FOR DIELECTRIC LAYERS IN SEMICONDUCTOR DEVICES - A semiconductor device having a high-k gate dielectric, and a method of manufacture, is provided. A gate dielectric layer is formed over a substrate. An interfacial layer may be interposed between the gate dielectric layer and the substrate. A barrier layer, such as a TiN layer, having a higher concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer is formed. The barrier layer may be formed by depositing, for example, a TiN layer and performing a nitridation process on the TiN layer to increase the concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer. A gate electrode is formed over the barrier layer. | 10-01-2015 |
20150372099 | CONTACT SILICIDE FORMATION USING A SPIKE ANNEALING PROCESS - A substrate is provided. The substrate has a source/drain region formed therein and a dielectric layer formed thereover. A contact hole is etched in the dielectric layer to expose a portion of the source/drain region. A metal material is formed on the source/drain region exposed by the opening. A first annealing process is performed to facilitate a reaction between the metal material and the portion of the source/drain region disposed therebelow, thereby forming a metal silicide in the substrate. The first annealing process is a spike annealing process. A remaining portion of the metal material is removed after the performing of the first annealing process. Thereafter, a second annealing process is performed. Thereafter, a contact is formed in the contact hole, the contact being formed on the metal silicide. | 12-24-2015 |
Patent application number | Description | Published |
20100311252 | OXYGEN PLASMA REDUCTION TO ELIMINATE PRECURSOR OVERFLOW IN BPTEOS FILM DEPOSITION - A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an O | 12-09-2010 |
20110006354 | METAL GATE STRUCTURE OF A SEMICONDUCTOR DEVICE - A semiconductor device structure, for improving the metal gate leakage within the semiconductor device. A structure for a metal gate electrode for a n-type Field Effect Transistor includes a capping layer; a first metal layer comprising Ti and Al over the capping layer; a metal oxide layer over the first metal layer; a barrier layer over the metal oxide layer; and a second metal layer over the barrier layer. | 01-13-2011 |
20130207213 | Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same - A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines. | 08-15-2013 |
Patent application number | Description | Published |
20090065905 | Conductive metal structure applied to a module IC and method of manufacturing the same - A conductive metal structure applied to a module IC includes a wafer, a first insulating unit, and a first conductive unit. The wafer has a main body and a through hole passing through the main body. The first insulating unit has a first inner insulating layer formed on an inner surface of the through hole and a first outer insulating layer that is extended from the first inner insulating layer and is formed on a first bottom surface of the main body. The first conductive unit has a first inner conductive layer formed on the first inner insulating layer and at least one first conductive pad formed on the first outer insulating layer. The present invention integrates semiconductor technologies of etching and deposition and combines them with the development of the module IC in order to provide a conductive metal structure that has lower cost and is manufactured easily. | 03-12-2009 |
20090079447 | TESTING SYSTEM FOR A RADIO FREQUENCY MODULE - A testing system for a RF module includes a metal casing formed a testing space therein, a RF testing socket disposed inside the testing module, and a pressing manipulator penetrating through the metal casing. A shielding material layer is disposed on the internal surface of the metal casing so that the RF signal is isolated inside the metal casing. An end of the pressing manipulator extends into the testing space. The pressing manipulator is controlled automatically and provides for a pressure on a RF module disposed on the testing module so as to execute a testing process. As mentioned above, the testing set for a RF module can prevent from RF testing interference and the testing manufacture efficiency is improved. | 03-26-2009 |
20090137217 | Communication transmission system and power detection method thereof - A communication transmission system is applied to an application device and includes a power detection circuit, and a radio frequency module. The power detection circuit is used for detecting the power on the output port of the communication transmission system, and for producing a feedback signal. The radio frequency module is connected to the power detection circuit for receiving the feedback signal so as to adjust its output power. In addition, the power detection circuit is built to be independent of the RF module for directly detecting the power on the output port of the communication transmission system which represents the actual power of the application device, thereby achieving the purpose of outputting a more stable and accurate output power through the RF module. | 05-28-2009 |
20090275296 | Communication module with dual systems and method for defining operating mode thereof - A communication module with dual systems for processing a first RF signal and a second RF signal that belong to different communication systems is provided. The communication module includes a first connection port and a signal distribution circuit. The first connection port is coupled to an external circuit, and the signal distribution circuit is coupled to the first connection port and between a first system path and a second system path inside the communication module. Regardless whether the external circuit is composed by an dual-band antenna or two uni-band antenna, the signal distribution circuit controls the first RF signal transmitting along the path between the first connection port and the first system path and controls the second RF signal transmitting along the path between the path between the first connection port and the second system path. | 11-05-2009 |
Patent application number | Description | Published |
20130293520 | DISPLAY DRIVING DEVICE AND METHOD FOR DRIVING DISPLAY PANEL - A display driving device and a method for driving a display panel are provided. The display driving device includes the display panel and a display driver. The display panel includes a plurality of pixel units and a plurality of multiplexers. Each of the multiplexers is disposed with N data lines. The display driver provides a plurality of display data strings and a plurality of selection signals to the multiplexers to control the multiplexers according to the selection signals to receive and sequentially output the display data of the pixel units. Each of the display data strings forms two display data sets of different polarities in a same scan line, and the display data sets include the display data of at least one pixel unit. Thereby, the polarity inversion number of the display data and accordingly the power consumption can be reduced when the display driving device drives the pixel units. | 11-07-2013 |
20140009511 | POWER SELECTOR, SOURCE DRIVER AND OPERATING METHOD THEREOF - A power selector, a source driver and an operating method thereof are provided. The source driver includes a plurality of channel groups. Each channel group includes a first and a second switching unit, a first and a second multiplexer, and an operating voltage control module. The first and the second switching unit respectively receive a first-polarity grayscale data and a second-polarity grayscale data. Output terminals of the first and the second multiplexer are respectively coupled to a first and a second data line. The operating voltage control module switches operating voltages of the first and the second multiplexer to a first operating power set or a second operating power set according to polarities of the first and the second data line and controls the first and the second switching unit to prevent the first and the second multiplexer from receiving the first-polarity grayscale data and the second-polarity grayscale data simultaneously. | 01-09-2014 |
20140368253 | LEVEL CONVERSION CIRCUIT AND METHOD FOR CONVERTING VOLTAGE LEVEL THEREOF - A level conversion circuit including a first level shifter and a second level shifter is provided. The first level shifter converts a first control voltage into a second control voltage during a voltage conversion period. The second level shifter is coupled to the first level shifter. The second level shifter converts the second control voltage into a third control voltage during the voltage conversion period to control a next stage circuit. The first level shifter is configured to detect a voltage level of a power domain where the third control voltage operates and generate a plurality of middle voltages based on the detection result. The second level shifter is configured to generate the third control voltage based on the middle voltages. Furthermore, a voltage level conversion method is also provided. | 12-18-2014 |
Patent application number | Description | Published |
20100142048 | LIGHT SOURCE MODULE FOR GENERATING POLARIZED LIGHT - A light source module for generating polarized light includes a light emitting element, a reflector, and an optical element. The light emitting element generates a light ray, and the reflector reflects the light ray towards the optical element. The optical element includes a light splitting face and a reflection face. The light splitting face receives the light ray, and an angle between the light splitting face and the incident light ray is at about a Brewster's Angle. After the light ray is irradiated to the light splitting face, the light ray is divided into a refraction light and a reflection light. The reflection face reflects the refraction light, and the reflection face is substantially perpendicular to a path of the refraction light. Therefore, a light source with a high degree of polarization is realized by a design of the light splitting face and the reflection face. | 06-10-2010 |
20110240402 | UNIT WITH A SOUND ISOLATION/VIBRATION ISOLATION STRUCTURE, ARRAY EMPLOYING THE SAME, AND METHOD FOR FABRICATING THE SAME - The disclosure provides a unit with a sound isolation/vibration isolation structure, an array employing the same, and a method for fabricating the same. The unit with a sound isolation/vibration isolation structure includes: a hollow frame surrounding an inside space; a film disposed within the inside space, vertically contacting an inside wall of the hollow frame; and a body mass disposed on a top surface of the film. Particularly, the horizontal area of the inside space is larger than the area of the top surface of the film. | 10-06-2011 |