Patent application number | Description | Published |
20110285859 | COMMUNICATION IMAGE INTEGRATION MODULE - A communication image integration module applied to a portable computer has both communication transmission and image capture functions, and the communication image integration module is connected to the portable computer through the electric connection interface unit, and the integration module includes a substrate, an image capture unit, a communication connection unit and a Bluetooth communication unit, and the image capture unit, the communication connection unit and the Bluetooth communication unit are installed on the substrate, and the image capture unit is electrically coupled to the electric connection interface unit, and the communication connection unit and the Bluetooth communication unit include a communication antenna and a Bluetooth antenna respectively, such that the communication image integration module can achieve primary manufacture, testing and purchase, and lower the manufacturing cost. | 11-24-2011 |
20130117549 | METHOD FOR EXECUTING MULTIPLE OPERATING SYSTEMS AND ELECTRONIC APPARATUS - A method for executing multiple operating systems (OSs) and an electronic apparatus are provided. Current hardware resources of the electronic apparatus are obtained after executing a boot process. The hardware resources are allocated to each of the OSs according to a resource allocation ratio, so as to load each of the OSs. | 05-09-2013 |
20130206566 | CAPACITIVE TOUCH DEVICE - A capacitive touch device includes a first transparent substrate, a second transparent substrate and an adhesive layer connecting the first and second transparent substrates with each other. The first transparent substrate has a first side and a second side. A first conductive layer is disposed on the second side. The second transparent substrate has a third side and a fourth side. A second conductive layer is selectively disposed on the third side or the fourth side. The adhesive layer is disposed between the first transparent substrate and the second transparent substrate. By means of the design of the capacitive touch device, the thickness of the touch device is greatly reduced and the manufacturing cost is lowered. | 08-15-2013 |
20130209808 | CAPACITIVE TOUCH UNIT - A capacitive touch unit includes a transparent substrate, a polymeric transparent substrate, a second conductive layer and an adhesive layer. The transparent substrate is coated with at least one first conductive layer and is correspondingly attached to the polymeric transparent substrate. The second conductive layer is selectively disposed on one of two sides of the polymeric transparent substrate. The adhesive layer is disposed between the transparent substrate and the polymeric transparent substrate. By means of the capacitive touch unit, the thickness can be greatly reduced and the manufacturing cost can be greatly lowered. | 08-15-2013 |
20130215072 | METHOD OF MANUFACTURING TOUCH PANEL - A method of manufacturing touch panel includes the steps of providing a backlight module having at least one extended wall portion formed therewith, so that a receiving space is enclosed in the extended wall portion; providing a liquid crystal display (LCD) layer and a capacitive sensing layer; providing a bonding layer to bond the LCD layer and the capacitive sensing layer to each other; and positioning the bonded LCD layer and capacitive sensing layer in the receiving space of the backlight module. Any extra amount of the bonding layer flowing out from between the bonded LCD layer and capacitive sensing layer forms an overflowed portion that is stopped by the extended wall portion from entering into the receiving space, so that time and labor costs for removing the overflowed portion in assembling the touch panel are saved and the production yield is increased. | 08-22-2013 |
20130215073 | TOUCH PANEL STRUCTURE - A touch panel structure includes a backlight module, a liquid crystal display (LCD) layer, a capacitive sensing layer, a bonding layer, and an electromagnetic sensing layer. The backlight module has at least one extended wall portion to enclose a receiving space therein. The LCD layer and the capacitive sensing layer are bonded together via the bonding layer, and are positioned in the receiving space. The electromagnetic sensing layer is attached to one side of the backlight module opposite to the LCD layer. With these arrangements, the touch panel structure provides more than one touch manner and is therefore more convenient for use. | 08-22-2013 |
20130215074 | TOUCH DEVICE - A touch device includes a transparent capacitive substrate having a first side and an opposite second side, a transparent electromagnetic substrate having a third side and an opposite fourth side, and a bonding layer applied to between the second side of the transparent capacitive substrate and the third side of the transparent electromagnetic substrate, so that the transparent capacitive substrate and the transparent electromagnetic substrate are bonded together via the bonding layer. With the transparent capacitive substrate and the transparent electromagnetic substrate electrically integrated into the touch device, the touch device can provide more than one touch manner and is therefore more convenient for use. | 08-22-2013 |
20130264183 | CAPACITIVE TOUCH UNIT - A capacitive touch unit includes a transparent substrate, a polymeric transparent substrate, a second conductive layer and an adhesive layer. The transparent substrate is coated with at least one first conductive layer and is correspondingly attached to the polymeric transparent substrate. The second conductive layer is selectively disposed on one of two sides of the polymeric transparent substrate. The adhesive layer is disposed between the transparent substrate and the polymeric transparent substrate. By means of the capacitive touch unit, the thickness can be greatly reduced and the manufacturing cost can be greatly lowered. | 10-10-2013 |
20130264184 | CAPACITIVE TOUCH DEVICE - A capacitive touch device includes a first transparent substrate, a second transparent substrate and an adhesive layer connecting the first and second transparent substrates with each other. The first transparent substrate has a first side and a second side. A first conductive layer is disposed on the second side. The second transparent substrate has a third side and a fourth side. A second conductive layer is selectively disposed on the third side or the fourth side. The adhesive layer is disposed between the first transparent substrate and the second transparent substrate. By means of the design of the capacitive touch device, the thickness of the touch device is greatly reduced and the manufacturing cost is lowered. | 10-10-2013 |
20140008199 | CAPACITIVE TOUCH PANEL STRUCTURE - A capacitive touch panel structure includes a transparent substrate, a conductive layer, a polymeric transparent substrate and an adhesive layer. The transparent substrate has a first side and a second side. The conductive layer is disposed on the second side. The polymeric transparent substrate has a third side and a fourth side. The adhesive layer is disposed between the transparent substrate and the polymeric transparent substrate. By means of the design of the capacitive touch panel structure, the number of the conductive layer is reduced to lower the manufacturing cost. | 01-09-2014 |
20140008202 | CAPACITIVE TOUCH PANEL UNIT - A capacitive touch panel unit includes a transparent substrate, a conductive layer and a protection layer. The transparent substrate has a first side and a second side opposite to the first side. The conductive layer is disposed on the second side. The protection layer is correspondingly attached to one side of the conductive layer, which side is opposite to the transparent substrate. By means of the design of the capacitive touch panel unit, the number of the conductive layer is reduced to lower the manufacturing cost and reduce the total thickness. | 01-09-2014 |
20140015766 | TOUCH UNIT - A touch unit includes multiple first axial electrodes and multiple second axial electrodes. The first axial electrodes extend in a first direction. Each first axial electrode includes multiple first sensing electrodes arranged in the first direction. Each first sensing electrode is formed with a hollow section and has a first extension end and a second extension end. The first and second extension ends defines therebetween a passageway in communication with the hollow section. Each second axial electrode includes multiple second sensing electrodes and multiple second connection lines. The second sensing electrodes are respectively disposed in the hollow sections. The second connection lines are connected with the second sensing electrodes and extend in a second direction through the passageways. By means of the design of the first and second axial electrodes, the manufacturing cost is effectively lowered and the total thickness of the touch unit is reduced. | 01-16-2014 |
20140028580 | TOUCH PAD - A touch pad includes a first transparent substrate and a second transparent substrate. The first transparent substrate has a plurality of first axial electrodes and at least one hollow channel. The second transparent substrate has a plurality of second axial electrodes. Each of the second axial electrodes has a plurality of first sensing electrode regions and at least one second sensing electrode region. The first sensing electrode regions are provided on both sides of the second sensing electrode region and arranged to extend along a second direction. The central portion of the second sensing electrode regions is formed with a hollow region. By means of the first axial electrode and the second axial electrode, the touch pad of the present invention has an increased signal-to-noise ratio and an enhanced anti-jamming capability. | 01-30-2014 |
20140043548 | CAPACITIVE TOUCH UNIT - A capacitive touch unit includes a transparent substrate, a polymeric transparent substrate, a second conductive layer and an adhesive layer. The transparent substrate is coated with at least one first conductive layer and is correspondingly attached to the polymeric transparent substrate. The second conductive layer is selectively disposed on one of two sides of the polymeric transparent substrate. The adhesive layer is disposed between the transparent substrate and the polymeric transparent substrate. By means of the capacitive touch unit, the thickness can be greatly reduced and the manufacturing cost can be greatly lowered. | 02-13-2014 |
20140049506 | TOUCH PANEL AND METHOD OF MANUFACTURING SAME - A touch panel and a method of manufacturing same are disclosed. The touch panel includes a backlight module, an LCD display unit disposed in a receiving space enclosed in a raised wall portion of the backlight module, a capacitive sensing layer arranged on one side of a first glass substrate of the LCD display unit, and a transparent substrate bonded by an adhesive layer to one side of the LCD display unit opposite to the backlight module. Any extra amount of the adhesive layer flowing out from between the LCD display unit and the transparent substrate forms an overflowed adhesive portion, which is also located in the receiving space and shielded by the raised wall portion of the backlight module. Therefore, the step of removing the overflowed adhesive portion can be saved to reduce the labor and time cost for assembling the touch panel. | 02-20-2014 |
20140125603 | TOUCH PANEL WITH PHOTOVOLATIC CONVERSION FUNCTION - A touch panel with photovoltaic conversion function includes a touch zone and a non-touch zone located immediately around the touch zone. The touch zone includes, from top to bottom, a first transparent substrate, a photovoltaic conversion layer, a touch electrode layer and a second transparent substrate. The photovoltaic conversion layer has an upper side attached to a lower side of the first transparent substrate, and the touch electrode layer is formed on an upper side of the second transparent substrate and attached to a lower side of the photovoltaic conversion layer. The touch panel having the above arrangements enables the photovoltaic conversion layer to have effectively increased light-absorption areas to convert more light into more electric current. | 05-08-2014 |
20140126122 | TOUCH MODULE WITH PHOTOVOLATIC CONVERSION FUNCTION - A touch module with photovoltaic conversion function includes a touch zone and a non-touch zone. The touch zone includes a first clear substrate, a second clear substrate and a photovoltaic conversion unit. The first clear substrate has opposite first and second sides, and the second clear substrate has opposite third and fourth sides. A first and a second touch electrode layer are provided on the second side and the third side, respectively; and the photovoltaic conversion unit is provided on the first side of the first clear substrate. By providing the photovoltaic conversion unit in the touch zone of the touch module, the photovoltaic conversion unit can have increased light-absorption areas to enable conversion of light into more electric current and accordingly, enable a touch device using the touch module to have extended standby and operation time. | 05-08-2014 |
20140126123 | TOUCH DEVICE WITH PHOTOVOLATIC CONVERSION FUNCTION - A touch device with photovoltaic conversion function includes a main body divided into a touch zone and a non-touch zone located immediately around the touch zone. A photovoltaic conversion layer is provided on a top of the touch zone. By providing the photovoltaic conversion layer on the top of the touch zone of the touch device, the photovoltaic conversion layer can have an increased light-absorption area to enable conversion of more light into more electric current for use by the touch device and accordingly, enable the touch device to have extended standby and operation time. | 05-08-2014 |
20140145971 | TOUCH Panel - A touch panel includes a substrate and a transparent conductor pattern. The substrate includes a display area and a first and a second peripheral area located outside and adjacent to two opposite sides of the display area. The transparent conductor pattern is formed on the substrate within the display area and includes a plurality of first electrodes and a plurality of second electrodes corresponding to the first electrodes. The second electrodes respectively have an electrode lead wire. The electrode lead wires of some of the second electrodes are extended into the first peripheral area to connect to a first peripheral wire structure in the first peripheral area while the electrode lead wires of the other second electrodes are extended into the second peripheral area to a second peripheral wire structure in the second peripheral area. | 05-29-2014 |
20140165383 | MANUFACTURING METHOD OF TOUCH PANEL - A manufacturing method of touch panel includes steps of: providing a substrate and defining a touch section and a non-touch section; disposing a shield layer on the non-touch section of the substrate; disposing a touch electrode layer with multiple touch electrodes on the touch section and the non-touch section by means of sputtering; covering the touch electrode layer with a metal mask and forming a metal wiring layer on the non-touch section by means of printing or sputtering and then removing the metal mask; performing lithography and etching processes to the touch electrode layer so as to form multiple touch electrodes; disposing an insulation layer on the junctions between the touch electrodes and the metal wires; disposing a lead layer with multiple metal leads on the insulation layer; and disposing a protection layer on the touch electrode layer and the metal wiring layer and the insulation layer. | 06-19-2014 |
20140166451 | TOUCH MODULE - A touch module includes a transparent substrate, a shield layer, a touch electrode layer, a transparent insulation layer and a lead layer. The shield layer is coated on the transparent substrate. The touch electrode layer is coated on both the transparent substrate and the shield layer. The transparent insulation layer is disposed on the touch electrode layer and formed with at least one through hole. The lead layer is disposed on the transparent insulation layer and formed with a conduction section positioned in the through hole in electrical connection with the touch electrode layer. Therefore, the lead layer can directly electrically connect with the touch electrode layer through the through hole of the transparent insulation layer. Accordingly, the cost for the optical mask design and the lithographic and etching processes can be saved and the problem that the transparent substrates often fail to fully attach is eliminated. | 06-19-2014 |
20140168529 | TOUCH DISPLAY DEVICE - A touch display device includes a touch sensing unit, a first conductive adhesive layer, a second conductive adhesive layer, a flexible printed circuit board, a liquid crystal display unit, a first adhesion layer and a second adhesion layer. The first adhesion layer serves to adhere the touch sensing unit to the liquid crystal display unit. The touch sensing unit includes a transparent substrate, multiple first sensing electrodes and multiple second sensing electrodes. The transparent substrate has a touch section and a peripheral section around the touch section. The first sensing electrodes are disposed on one side of the transparent substrate and positioned on the touch section. The second sensing electrodes are disposed in the liquid crystal display unit. The touch display device increases the ratio of good products and lowers the manufacturing risk. | 06-19-2014 |
20140168530 | POLARIZATION STRUCTURE WITH TOUCH FUNCTION - The present invention provides a polarization structure with touch functions, including a first polarization plate, a transparent substrate having an inductive electrode layer, a first conductive glue layer, and a first adhesive layer, one side of the first conductive glue layer being attached to the inductive electrode layer and the other side thereof being attached to an FPC, the first adhesive layer being disposed between the first polarization plate and the transparent substrate, whereby the first polarization plate is attached to the transparent substrate. The structure of the present invention is applied to an LCD module and thus the manufacturing yield can be increased and the touch functions can be fulfilled. | 06-19-2014 |
20140168531 | POLARIZATION UNIT WITH TOUCH FUNCTION - The present invention provides a polarization unit with touch functions, including a first polarization plate and an inductive electrode layer. The first polarization plate has a first side and a second side opposite to the first side. The inductive electrode layer is disposed on the first side of the first polarization plate. By means of the polarization unit of the present invention being applied to an LCD module, the manufacturing yield can be increased and the touch functions of the LCD module can be fulfilled. | 06-19-2014 |
20140168532 | POLARIZER STRUCTURE - A polarizer structure includes a transparent substrate, a sensor, a polarizing plate and a first insulating adhesive layer. The sensor is coated on one side of the transparent substrate, and the first insulating adhesive layer is arranged between the sensor and the polarizing plate to bond them together. The polarizer structure is configured for arrangement on a liquid crystal display (LCD) unit to make the latter a touch screen, on which a user can input and do other operations by touching the polarizer structure. In this manner, a touch screen can be manufactured with reduced cost and increased good yield rate. | 06-19-2014 |
20140168535 | TOUCH PANEL - A touch panel includes a substrate, a shielding layer, a first electrode layer, a first insulation layer, a second electrode layer, a lead layer and a second insulation layer. The substrate has a touch section and a non-touch section. The shield layer and the lead layer are disposed on the non-touch section. The first and second electrode layers are disposed on touch section. The first insulation layer is disposed between the first and second electrode layers corresponding to the second electrode layer. The second insulation layer is overlaid on the second electrode layer and the lead layer. In the touch panel, the number of leads is reduced. Moreover, the touch panel is free from the problems of interference and signal interference between the electrodes. | 06-19-2014 |
20140347228 | ELECTRONIC DEVICE - An electronic device includes a main body, a metal cover, an antenna and a magnetic flux inducer unit. The metal cover is disposed at the main body and the main body includes a nonmetal covered portion. The antenna is disposed in the main body. The magnetic flux inducer unit is disposed in the main body and located between the nomnetal covered portion and the antenna. The permeability of the magnetic flux inducer unit is greater than 1. | 11-27-2014 |
20150052747 | MANUFACTURING METHOD OF TOUCH SUBSTRATE - A manufacturing method of touch substrate includes steps of: providing a substrate, a photosensitive film of Nano-Silver particles being formed on a surface of the substrate; performing an exposure process to the film of Nano-Silver particles of the surface of the substrate; performing a development process to the film of Nano-Silver particles of the surface of the substrate to form a nontransparent sensing electrode layer and a nontransparent electrode wiring layer in the form of a mesh on the surface of the substrate; and performing a high electrical conductivity treatment and a stabilization treatment to the nontransparent sensing electrode layer on the surface of the substrate. So, the nontransparent sensing electrode layer and nontransparent electrode wiring layer can be formed on the surface of the substrate at the same time. Therefore, the manufacturing process is simplified. Moreover, the surface resistance is lowered and the wiring space is enlarged. | 02-26-2015 |
20150053639 | METHOD OF MANUFACTURING TOUCH DEVICES - A method of manufacturing touch devices comprises the steps of cutting a large-sized substrate into a plurality of even units and then performing the subsequent machining processes, providing the required materials of each structure layer, layer by layer, via sputtering or coating, and then simultaneously forming each structure layer via processes such as photolithography, developing, and etching. Therefore, the manufacturing cost is significantly reduced and the structure strength is substantially enhanced. | 02-26-2015 |
20150055028 | TOUCH SUBSTRATE - A touch substrate includes a substrate, a nontransparent electrode wiring layer formed on a surface of the substrate and at least one nontransparent sensing electrode layer formed on the surface of the substrate. The nontransparent sensing electrode layer has multiple Nano-Silver particles and multiple nontransparent sensing blocks formed of the Nano-Silver particles, which are arranged in the form of a mesh. The nontransparent electrode wiring layer is in adjacency to and in connection with the nontransparent sensing electrode layer. According to the arrangement of the touch substrate, the manufacturing process is simplified and the surface resistance is lowered. Also, the wiring space is enlarged. | 02-26-2015 |
20150091764 | WEARABLE ELECTRONIC DEVICE - A wearable electronic device includes a body and a wearing element. The body includes a conductive frame. The conductive frame includes a feeding point and at least one grounding point to form a first current path and a second current path. Furthermore, the conductive frame forms a loop antenna via the first current path and the second current path, respectively, so as to operate in a first band and a second band. The wearing element is connected to the body. | 04-02-2015 |
20150138100 | TOUCH MODULE WITH PHOTOELECTRIC CONVERSION LAYER - A touch module with photoelectric conversion layer includes a transparent substrate, an anti-reflection layer, a shield layer, a first electrode layer, a first insulation layer, a second electrode layer, a second insulation layer, a wiring layer, a protection layer and a photoelectric conversion layer. The transparent substrate is defined with a touch section and a non-touch section. The photoelectric conversion layer is disposed in the touch section so that the total thickness of the touch module is reduced. Moreover, the photoelectric conversion layer is combined with the touch module to convert optical energy into electrical energy and provide the electrical energy for the touch module. Accordingly, the standby and use time of the touch module is prolonged. | 05-21-2015 |
20150242030 | TOUCH MODULE WITH PHOTOELECTRIC CONVERSION LAYER - A touch module with photoelectric conversion layer includes a transparent substrate, an anti-reflection layer, a shield layer, a first electrode layer, a first insulation layer, a second electrode layer, a second insulation layer, a wiring layer, a protection layer and a photoelectric conversion layer. The transparent substrate is defined with a touch section and a non-touch section. The photoelectric conversion layer is disposed in the touch section so that the total thickness of the touch module is reduced. Moreover, the photoelectric conversion layer is combined with the touch module to convert optical energy into electrical energy and provide the electrical energy for the touch module. Accordingly, the standby and use time of the touch module is prolonged. | 08-27-2015 |
20150242031 | TOUCH MODULE WITH PHOTOELECTRIC CONVERSION LAYER - A touch module with photoelectric conversion layer includes a transparent substrate, an anti-reflection layer, a shield layer, a first electrode layer, a first insulation layer, a second electrode layer, a second insulation layer, a wiring layer, a protection layer and a photoelectric conversion layer. The transparent substrate is defined with a touch section and a non-touch section. The photoelectric conversion layer is disposed in the touch section so that the total thickness of the touch module is reduced. Moreover, the photoelectric conversion layer is combined with the touch module to convert optical energy into electrical energy and provide the electrical energy for the touch module. Accordingly, the standby and use time of the touch module is prolonged. | 08-27-2015 |
20160004363 | MANUFACTURING METHOD OF TOUCH MODULE - A manufacturing method of touch module includes steps of: providing a substrate and disposing a shield layer on the substrate, a section of the substrate where the shield layer is positioned being defined as a non-touch section, a section of the substrate, which is free from the shield layer being defined as a touch section; printing multiple touch electrodes on the touch section and the non-touch section of the substrate by means of printing process; disposing an insulation layer on the touch electrodes of the non-touch section, the insulation layer being formed with multiple electrical connection holes on the touch electrodes; disposing a lead layer with multiple metal leads on the insulation layer to pass through the electrical connection holes to electrically connect with the touch electrodes; and disposing a protection layer on the touch electrodes and the lead layer. | 01-07-2016 |
20160006093 | ELECTROMAGNETIC BANDGAP STRUCTURE AND ELECTRONIC DEVICE HAVING THE SAME - An electromagnetic bandgap structure and an electronic device having the same are provided. The electromagnetic bandgap structure includes a first conductive element, a second conductive element and a planar inductive element. The planar inductive element is disposed between the first conductive element and the second conductive element. Furthermore, the planar inductive element is electrically connected to the first conductive element via a first conductive pillar, and it is electrically connected to the second conductive element via a second conductive pillar. | 01-07-2016 |
20160062417 | WEARABLE ELECTRONIC DEVICE - A wearable electronic device includes a device body and a wearing element. The wearing element is connected to the device body. The device body includes a conductive upper cover, a conductive lower cover, an insulating frame and a circuit system. The insulating frame is disposed between the conductive upper cover and the conductive lower cover and forms an accommodating space therewith. The circuit system is disposed in the accommodating space. The conductive upper cover has a first feeding point. The conductive lower cover has a second feeding point. The circuit system is coupled to the first feeding point and the second feeding point respectively. | 03-03-2016 |
Patent application number | Description | Published |
20120313175 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including a substrate, a deep well, a high-voltage well, and a doped region. The substrate and the high-voltage well have a first conductive type, and the deep well and the doped region have a second conductive type different from the first conductive type. The substrate has a high-voltage region and a low-voltage region, and the deep well is disposed in the substrate in the high-voltage region. The high-voltage well is disposed in the substrate between the high-voltage region and the low-voltage region, and the doped region is disposed in the high-voltage well. The doped region and the high-voltage well are electrically connected to a ground. | 12-13-2012 |
20120319189 | HIGH-VOLTAGE SEMICONDUCTOR DEVICE - The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type. | 12-20-2012 |
20120326266 | HIGH-VOLTAGE SEMICONDUCTOR DEVICE - A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure. | 12-27-2012 |
20130113048 | HIGH VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A method for fabricating a high voltage semiconductor device is provided. Firstly, a substrate is provided, wherein the substrate has a first active zone and a second active zone. Then, a first ion implantation process is performed to dope the substrate by a first mask layer, thereby forming a first-polarity doped region at the two ends of the first active zone and a periphery of the second active zone. After the first mask layer is removed, a second ion implantation process is performed to dope the substrate by a second mask layer, thereby forming a second-polarity doped region at the two ends of the second active zone and a periphery of the first active zone. After the second mask layer is removed, a first gate conductor structure and a second gate conductor structure are formed over the middle segments of the first active zone and the second active zone, respectively. | 05-09-2013 |
20130187225 | HIGH VOLTAGE MOSFET DEVICE - A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%. | 07-25-2013 |
20130221438 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND LAYOUT PATTERN THEREOF - A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region includes a plurality of gaps formed therein. The non-continuous doped region further includes a second conductivity type complementary to the first conductivity type. | 08-29-2013 |
20130234141 | HIGH VOLTAGE SEMICONDUCTOR DEVICE - A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged. | 09-12-2013 |
20130277742 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation. | 10-24-2013 |
20130307071 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND LAYOUT PATTERN THEREOF - A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region further includes a plurality of third doped regions, a plurality of gaps, and a plurality of fourth doped regions. The gaps and the third doped regions s are alternately arranged, and the fourth doped regions are formed in the gaps. The third doped regions include a second conductivity type complementary to the first conductivity type, and the fourth doped regions include the first conductivity type. | 11-21-2013 |
20130320445 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - A high voltage metal-oxide-semiconductor (HV MOS) device includes a substrate, a gate positioned on the substrate, a drain region formed in the substrate, a source region formed in the substrate, a first doped region formed in between the drain region and the source region, and a second doped region formed over a top of the first doped region or/and under a bottom of the first doped region. The drain region, the source region, and the second doped region include a first conductivity type, the first doped region includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary. | 12-05-2013 |
20130328123 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate; a deep well disposed in the semiconductor substrate; a first doped region disposed in the deep well, wherein the first doped region contacts the buried layer; a conductive region having the first conductivity type surrounding and being adjacent to the first doped region, wherein the conductive region has a concentration higher than the first doped region; a first heavily doped region disposed in the first doped region; a well having a second conductivity type disposed in the deep well; a second heavily doped region disposed in the well; a gate disposed on the semiconductor substrate between the first heavily doped region and the second heavily doped region; and a first trench structure and a second trench structure, wherein a depth of the second trench structure is substantially deeper than a depth of the buried layer. | 12-12-2013 |
20130334600 | TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF - A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well. | 12-19-2013 |
20140042527 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess. | 02-13-2014 |
20140051202 | METHOD OF FABRICATING SOLAR CELL - A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and the doped layer. Furthermore, a patterned mask layer totally overlapping the patterned material layer is formed on the first metal layer, and a second metal layer is formed on the doped layer not overlapped by the patterned material layer. Then, the patterned mask layer, the first metal layer between the patterned mask layer and the patterned material layer and a part of the patterned material layer are removed. | 02-20-2014 |
20140091369 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - A HV MOS transistor device is provided. The HV MOS transistor device includes a substrate comprising at least an insulating region formed thereon, a gate positioned on the substrate and covering a portion of the insulating region, a drain region and a source region formed at respective sides of the gate in the substrate, and a first implant region formed under the insulating region. The substrate comprises a first conductivity type, the drain, the source, and the first implant region comprise a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. | 04-03-2014 |
20140091389 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - A high voltage metal-oxide-semiconductor transistor device includes a substrate having an insulating region formed therein, a gate covering a portion of the insulating region and formed on the substrate, a source region and a drain region formed at respective sides of the gate in the substrate, a body region formed in the substrate and partially overlapped by the gate, and a first implant region formed in the substrate underneath the gate and adjacent to the body region. The substrate and body region include a first conductivity type. The source region, the drain region, and the first implant region include a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. | 04-03-2014 |
20140131797 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug. | 05-15-2014 |
20140159155 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND LAYOUT PATTERN THEREOF - A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region. | 06-12-2014 |
20140339636 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - A high voltage metal-oxide-semiconductor (HV MOS) transistor device includes a substrate, a drifting region formed in the substrate, a plurality of isolation structures formed in the drift region and spaced apart from each other by the drift region, a plurality of doped islands respectively formed in the isolation structures, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective two sides of the gate. The gate covers a portion of each isolation structure. The drift region, the source region, and the drain region include a first conductivity type, the doped islands include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. | 11-20-2014 |
20140367789 | POWER ARRAY WITH STAGGERED ARRANGEMENT FOR IMPROVING ON-RESISTANCE AND SAFE OPERATING AREA - A power array with a staggered arrangement for improving on-resistance and safe operating area of a device is provided. Each power array includes two or more rows with a plurality of parallel device units arranged along the row. Each device unit includes a source region, a drain region, and a gate disposed between the source region and the drain region, wherein each drain region is offset from the adjacent drain region of adjacent rows in a row direction. | 12-18-2014 |
20150014768 | HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF - A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sides of the gate. The epitaxial layer, the source region and the drain region include a first conductivity type. The gate includes a first portion formed on the substrate and a second portion extending into the STI. | 01-15-2015 |
20150079754 | METHOD OF FABRICATING HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE - The present invention provides a method of fabricating a HV MOS transistor device, including forming a deep well in a substrate, and the deep well; forming a first doped region in the deep well, and the first doped region, wherein a doping concentration of the first doped region and a doping concentration of the deep well in at least one electric field concentration region has a first ratio, the doping concentration of the first doped region and the doping concentration of the deep well outside the electric field concentration region has a second ratio, and the first ratio is greater than the second ratio; and forming a high voltage well in the substrate, and forming a second doped region and a third doped region respectively in the deep well and in the high voltage well. | 03-19-2015 |
20150137228 | SEMICONDUCTOR STRUCTURE - A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation, and a second isolation. The second well is spaced apart from the first well. The first isolation extends down from the surface of the substrate and is disposed between the gate electrode and the second well. The second isolation extends down from the surface of the substrate and is adjacent to the first well. A ratio of a depth of the first isolation to a depth of the second isolation is smaller than 1. | 05-21-2015 |
20150145034 | LDMOS STRUCTURE AND MANUFACTURING METHOD THEREOF - A LDMOS structure including a semiconductor substrate, a drain region, a lightly doped drain (LDD) region, a source region and a gate structure is provided. The substrate has a trench. The drain region is formed in the semiconductor substrate under the trench. A LDD region is formed in the semiconductor substrate at a sidewall of the trench. The source region is formed in the semiconductor substrate. The gate structure is formed on a surface of the semiconductor substrate above the LDD region between the drain region and the source region. A method for manufacturing the LDMOS structure is also provided. | 05-28-2015 |
Patent application number | Description | Published |
20090313574 | MOBILE DOCUMENT VIEWER - Various technologies and techniques are disclosed for a mobile document viewer. Techniques for toggling between document formats are described. A request is received from a user to view a document on a mobile device. The document is retrieved in a first visual format and displayed. A request is received from the user to view the document in a second visual format. The document is retrieved in the second visual format and displayed. The document viewer contains three primary areas. A navigation bar has the most frequently used operations. A page content area follows the navigation bar and can display at least a portion of a document being viewed on the document viewer. A menu area follows the page content area and contains operations that can be performed on the document by a user. Techniques for optimizing the display of images within a document are also described. | 12-17-2009 |
20100138212 | VIEWING MESSAGES AND MESSAGE ATTACHMENTS IN DIFFERENT LANGUAGES - Architecture that facilitates language conversion and previewing of a message attachment in multiple different languages. The architecture can be employed in a messaging application or a personal information manager program, for example, such that the message attachment can be selected and designated for conversion into a different language, and then previewed in the different language. For example, a first language can be simplified Chinese and a second language can be traditional Chinese, such that the user can toggle the preview to view the attachment in the simplified or traditional Chinese languages. The attachment can be a word processing document, a spreadsheet document, a presentation document for the presentation of information, and/or a web feed document. Additionally, the attachment can be one of multiple attachments to the message that is selected by the user. | 06-03-2010 |
20100153114 | AUDIO OUTPUT OF A DOCUMENT FROM MOBILE DEVICE - Architecture for playing a document converted into an audio format to a user of an audio-output capable device. The user can interact with the device to control play of the audio document such as pause, rewind, forward, etc. In more robust implementation, the audio-output capable device is a mobile device (e.g., cell phone) having a microphone for processing voice input. Voice commands can then be input to control play (“reading”) of the document audio file to pause, rewind, read paragraph, read next chapter, fast forward, etc. A communications server (e.g., email, attachments to email, etc.) transcodes text-based document content into an audio format by leveraging a text-to-speech (TTS) engine. The transcoded audio files are then transferred to mobile devices through viable transmission channels. Users can then play the audio-formatted document while freeing hand and eye usage for other tasks. | 06-17-2010 |
20120109656 | AUDIO OUTPUT OF A DOCUMENT FROM MOBILE DEVICE - Architecture for playing a document converted into an audio format to a user of an audio-output capable device. The user can interact with the device to control play of the audio document such as pause, rewind, forward, etc. In more robust implementation, the audio-output capable device is a mobile device (e.g., cell phone) having a microphone for processing voice input. Voice commands can then be input to control play (“reading”) of the document audio file to pause, rewind, read paragraph, read next chapter, fast forward, etc. A communications server (e.g., email, attachments to email, etc.) transcodes text-based document content into an audio format by leveraging a text-to-speech (TTS) engine. The transcoded audio files are then transferred to mobile devices through viable transmission channels. Users can then play the audio-formatted document while freeing hand and eye usage for other tasks. | 05-03-2012 |
20150348534 | AUDIO OUTPUT OF A DOCUMENT FROM MOBILE DEVICE - Architecture for playing a document converted into an audio format to a user of an audio-output capable device. The user can interact with the device to control play of the audio document such as pause, rewind, forward, etc. In more robust implementation, the audio-output capable device is a mobile device (e.g., cell phone) having a microphone for processing voice input. Voice commands can then be input to control play (“reading”) of the document audio file to pause, rewind, read paragraph, read next chapter, fast forward, etc. A communications server (e.g., email, attachments to email, etc.) transcodes text-based document content into an audio format by leveraging a text-to-speech (TTS) engine. The transcoded audio files are then transferred to mobile devices through viable transmission channels. Users can then play the audio-formatted document while freeing hand and eye usage for other tasks. | 12-03-2015 |