Patent application number | Description | Published |
20140113043 | DAIRY COMPOSITIONS - The present invention relates to low calorie and low carbohydrate nutritional milk compositions and milk products which are designed to include specific components of milk. | 04-24-2014 |
20140144928 | Liquid Product Dispensing System and Method - An embodiment system and method for dispensing multiple dairy products includes a dispenser which houses two or more dairy product bases with different formulations, which may be combined with or without water to create a multitude of homogenous dairy beverages. The two or more dairy product bases may be mixed together first and then separately mixed with water, mixed together simultaneously with water, or mixed together without adding water. They may be mixed together with or without additional flavoring, ingredients, mineral or nutritional additives. The dispenser comprises a pump with a quick-release mechanism to allow for quick and clean maintenance of the system. | 05-29-2014 |
20140144932 | Liquid Food Dispenser System and Method - A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed tank. | 05-29-2014 |
Patent application number | Description | Published |
20090236361 | Liquid Food Dispenser System and Method - A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed tank. | 09-24-2009 |
20120205397 | Liquid Food Dispenser System and Method - A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed tank. | 08-16-2012 |
20120261442 | Liquid Food Dispenser System and Method - A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed tank. | 10-18-2012 |
20130256333 | Liquid Food Dispenser System and Method - A system and method for dispensing fluids is introduced. A preferred embodiment comprises a sealed tank, a bag containing fluid inside the sealed tank, an outlet for dispensing the liquid in the bag, and a pressure generating device to create pressure in the sealed tank. | 10-03-2013 |
Patent application number | Description | Published |
20140069811 | ELECTROCHEMICAL SENSOR WITH DIAMOND ELECTRODES - An electrochemical sensor comprising: a reference electrode ( | 03-13-2014 |
20140069815 | ELECTROCHEMICAL DEPOSITION AND SPECTROSCOPIC ANALYSIS METHODS AND APPARATUS USING DIAMOND ELECTRODES - A method of analysing chemical species in a solution, the method comprising: providing an electrochemical deposition apparatus comprising a first electrode ( | 03-13-2014 |
20140239051 | CUTTER STRUCTURES, INSERTS COMPRISING SAME AND METHOD FOR MAKING SAME - A method of making a cutter structure comprising super-hard material defining a rake face topology is provided. The method includes providing a pre-sinter assembly comprising a substrate body having a formation surface defining a topology complementary to the rake face topology, and an aggregation comprising a plurality of super-hard grains, the aggregation disposed adjacent the formation surface of the substrate body, the substrate body comprising a source of catalyst or binder material capable of promoting the sintering of the super-hard grains at a pressure and temperature at which the super-hard material is thermodynamically stable; subjecting the pre-sinter assembly to the pressure and temperature to provide a sintered polycrystalline super-hard structure joined to the formation surface of the substrate body at a first major boundary of the super-hard structure and having a second major boundary surface opposite the formation surface; removing the substrate body to expose the first major boundary of the super-hard structure defining the rake face topology. Cutter inserts and machine tools are also provided. | 08-28-2014 |
20140332934 | SUBSTRATES FOR SEMICONDUCTOR DEVICES - A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 μm or less;a second layer having a thickness of no less than 0.5 μm and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80° C.; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material. | 11-13-2014 |
20140339684 | SYNTHETIC DIAMOND COATED COMPOUND SEMICONDUCTOR SUBSTRATES - A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapour deposition (CVD) reactor, the composite substrate comprising a single crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of synthetic diamond material thereon via a CVD technique; and growing a layer of CVD diamond material on the growth surface of the interface layer, wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a centre point thereof is maintained to be no more than 80° C., and wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100. | 11-20-2014 |
20140342122 | LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAMOND WINDOW - A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 μm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient≦0.2 cm | 11-20-2014 |
20140349068 | LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAOND WINDOW - A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm | 11-27-2014 |
20150102266 | SYNTHETIC DIAMOND MATERIALS FOR ELECTROCHEMICAL SENSING APPLICATIONS - A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionised water and 0.1 M KNO | 04-16-2015 |
Patent application number | Description | Published |
20090208666 | DIAMOND COATED SURFACES - A method of producing a diamond coated surface on a substrate. A surface of the substrate is prepared by exposing it to a power beam, such as an electron beam, to increase the surface area and surface roughness. Such preparation may also provide the surface with three dimensional features onto which a diamond layer can adhere and mechanically lock. Adhesion of a diamond layer applied to the prepared surface is increased. | 08-20-2009 |
20100126879 | Solid Electrode - The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used. | 05-27-2010 |
20120312682 | SOLID ELECTRODE - The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used. | 12-13-2012 |
20140159055 | SUBSTRATES FOR SEMICONDUCTOR DEVICES - A method of manufacturing a composite substrate for a semiconductor device, the method comprising:
| 06-12-2014 |
20150204805 | ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY - an x-ray fluorescence spectrometer ( | 07-23-2015 |
20150212042 | IN-SITU ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY - A sensor comprising: a first electrode formed of an electrically conductive material and configured to be located in contact which a solution to be analysed; a second electrode configured to be in electrical contact with the solution to be analysed; an electrical controller configured to apply a potential difference between the first and second electrodes to electro-deposit chemical species from the solution onto the first electrode, and an x-ray fluorescence spectrometer configured to perform an x-ray fluorescence spectroscopic analysis technique on the electro-deposited chemical species, the x-ray fluorescence spectrometer comprising an x-ray source configured to direct an x-ray excitation beam to the electro-deposited chemical species on the first electrode and an x-ray detector configured to receive x-rays emitted from the electro-deposited chemical species and generate spectroscopic data about the chemical species electro-deposited on the first electrode, wherein the sensor is configured such that in use the x-ray excitation beam incident on the electro-deposited chemical species on the first electrode is attenuated by no more than | 07-30-2015 |