Patent application number | Description | Published |
20090061245 | Shrink Film - Disclosed is a shrink film which includes a core layer; two plies of intermediate layer respectively arranged on both sides of the core layer; and two plies of surface layer respectively arranged on both outer sides of the intermediate layers, and which has a five-layered multilayer structure composed of three types of layers [(surface layer)/(intermediate layer)/(core layer)/(intermediate layer)/(surface layer)]. The core layer is a resinous layer mainly containing a polyolefin resin, the surface layer is a resinous layer mainly containing a polyester resin, and the intermediate layer is a resinous layer mainly containing a polyethylene resin containing a glycidyl methacrylate (GMA) component. The shrink film has a low specific gravity, shows excellent shrink properties, has a high interlayer strength between film layers, and is tough, excellent shrink film. It is particularly useful as a shrink label for PET bottles. | 03-05-2009 |
20090305067 | HEAT-SHRINKABLE FILM - The present invention provides a raulti-layer heat-shrinkable film comprising: a first outer layer comprising a polyester; a second outer layer comprising a polyester; an inner layer comprising a polyolefin; a first intermediate layer between the first outer layer and the inner layer comprising polypropylene grafted with glycidyl methacrylate either directly or through a graft promoter; and a second intermediate layer between the second outer layer and the inner layer comprising polypropylene grafted with glycidyl methacrylate either directly or through a graft promoter. | 12-10-2009 |
20100279133 | SHRINK FILM AND CYLINDRICAL SHRINK LABEL - [Object] To provide a multilayer shrink film which is composed of different polymers, i.e., a polypropylene resin and an aromatic polyester resin and which does not suffer from delamination even in a center-sealed portion during shrinking process; and a cylindrical shrink label using the shrink film. | 11-04-2010 |
Patent application number | Description | Published |
20080213158 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride - A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material ( | 09-04-2008 |
20110012173 | SEMICONDUCTOR DEVICE - A semiconductor device includes an undoped GaN layer ( | 01-20-2011 |
20110272740 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region. | 11-10-2011 |
20120119261 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate | 05-17-2012 |
20120153355 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate. | 06-21-2012 |
20130171811 | METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR - In a method for manufacturing a compound semiconductor, a silicon oxide film is formed in an upper part of a substrate made of silicon. Subsequently, a base layer made of single crystal silicon to which ions are implanted is formed by performing ion implantation to a region of the substrate below the silicon oxide film and performing a thermal process. Then, the base layer is exposed by removing the silicon oxide film. Finally, a GaN layer is formed on the base layer. | 07-04-2013 |
20130341682 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a semiconductor substrate and a nitride semiconductor layer disposed on the semiconductor substrate. The semiconductor substrate includes a normal region, a carrier supplying region, and an interface current blocking region. The interface current blocking region surrounds the normal region and the carrier supplying region. The interface current blocking region and the carrier supplying region include impurities. The carrier supplying region has a conductivity type allowing the carrier supplying region to serve as a source of carriers supplied to or a destination of carriers supplied from a carrier layer generated at an interface between the nitride semiconductor layer and the semiconductor substrate. The interface current blocking region has a conductivity type allowing the interface current blocking region to serve as a potential barrier to the carriers. | 12-26-2013 |
20140097433 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE - A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals. | 04-10-2014 |
20150179741 | SEMICONDUCTOR DEVICE - A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of AlN, a 2 μm-thick undoped GaN layer, and 20 nm-thick undoped AlGaN having an Al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped AlGaN layer. Further, in the undoped GaN layer and the undoped AlGaN layer immediately below a gate wire, a high resistance region, the resistance of which is increased by for example, ion implantation with Ar or the like, is formed, and a boundary between the high resistance region and an element region is positioned immediately below the gate wire. | 06-25-2015 |
20160064376 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a substrate; a nitride semiconductor layer formed on the substrate; a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order. The semiconductor apparatus has a transistor/diode pair in which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are sequentially disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring and serve as a common electrode. | 03-03-2016 |
Patent application number | Description | Published |
20120037409 | METHOD OF MANUFACTURING MULTILAYER PRINTED WIRING BOARD AND MULTILAYER WIRING BOARD OBTAINED THEREBY - In a method of manufacturing a multilayer board, including: a drilling step for forming a via hole through a pre-preg by laser beam machining, a step of filling the via hole with conductive paste containing a resin component and metal powder, and a step of arranging copper layers or copper layer portions of patterned boards on and under the filled conductive paste and pressing the same, a multilayer printed wiring board superior in conductivity and long-term stability is obtained by using alloying paste as the conductive paste in which at least part of the metal powder is melted and the metal powders adjacent to each other are alloyed, using a pre-preg having a ratio A/B of at least 10 before subjected to preheating, where A is a storage modulus at an inflection point where the storage modulus changes from increasing to decreasing and B is a storage modulus at an inflection point where the storage modulus changes from decreasing to increasing in a temperature profile rising from 60° C. to 200° C., and preheating the pre-preg before the drilling step to reduce the ratio A/B to below 10. | 02-16-2012 |
20140138126 | METHOD OF MANUFACTURING MULTILAYER PRINTED WIRING BOARD AND MULTILAYER WIRING BOARD OBTAINED THEREBY - In a method of manufacturing a multilayer board, including: a drilling step for forming a via hole through a pre-preg by laser beam machining, a step of filling the via hole with conductive paste containing a resin component and metal powder, and a step of arranging copper layers or copper layer portions of patterned boards on and under the filled conductive paste and pressing the same, a multilayer printed wiring board superior in conductivity and long-term stability is obtained by using alloying paste as the conductive paste in which at least part of the metal powder is melted and the metal powders adjacent to each other are alloyed, using a pre-preg having a ratio A/B of at least 10 before subjected to preheating, where A is a storage modulus at an inflection point where the storage modulus changes from increasing to decreasing and B is a storage modulus at an inflection point where the storage modulus changes from decreasing to increasing in a temperature profile rising from 60° C. to 200° C., and preheating the pre-preg before the drilling step to reduce the ratio A/B to below 10. | 05-22-2014 |
Patent application number | Description | Published |
20100195206 | IMAGE STABILIZING DEVICE AND CAMERA - An image stabilizing device of the present invention includes: a correction lens holding member | 08-05-2010 |
20110267712 | LENS DRIVE UNIT, LENS BARREL AND IMAGING APPARATUS - A lens drive unit includes a movable member with lenses; and a guide portion configured to movably guide the movable member back and forth along a predetermined direction and rotatably guide the movable member about a predetermined rotational axis in a plane perpendicular to an optical axis of the lens. A distance r between the gravity center of the movable member and the rotational axis satisfies the following expression (A): | 11-03-2011 |
20110317266 | IMAGE STABILIZING DEVICE AND CAMERA - An image stabilizing device of the present invention includes: a correction lens holding member | 12-29-2011 |
20120133818 | ACTUATOR, DRIVING DEVICE AND IMAGING DEVICE - The actuator disclosed herein comprises a coil, a magnet and a magnetism detection element. The magnet is configured to move a predetermined distance relative to the coil via a magnetic force generated when current is passed through the coil. The magnet includes a first polarization line perpendicular to the direction in which the magnet moves relative to the coil, and a second polarization line parallel to the first polarization line. The magnetism detection element is configured to detect the position of the magnet. The coil faces the first polarization line and the magnetism detection element faces the second polarization line. The length from the second polarization line to a first end of the magnet is equal to or more than 1.25 times the predetermined distance. The first end of the magnet is closer to the magnetism detection element than to the coil. | 05-31-2012 |
20140132251 | POSITION DETECTION DEVICE, DRIVE DEVICE, AND LENS BARREL - A position detection device includes a detection portion and a magnetism generation portion. The detection portion includes a first magnetism detection element and a second magnetism detection element. The first magnetism detection element and the second magnetism detection element are disposed on a plane. The magnetism generation portion is disposed at a position opposite the detection portion. The magnetism generation portion includes mutually opposing magnetic fluxes with respect to the detection portion by performing bipolar magnetization on a face opposite the plane where the first magnetism detection element and the second magnetism detection element are disposed. | 05-15-2014 |
Patent application number | Description | Published |
20090128998 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor comprising a capacitor element having an anode member and a cathode member, an anode terminal electrically connected with the anode member, a cathode terminal electrically connected with the cathode member, and a mold resin portion covering the capacitor element; wherein the cathode terminal has an upper step portion in face-to-face contact with the cathode member and a lower step portion exposed out of the mold resin portion and a bottom surface of the mold resin portion and an upper surface of the lower step portion of the cathode terminal are disposed in an approximately same plane. | 05-21-2009 |
20090147447 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor includes a capacitor element, an anode lead frame, a cathode lead frame, and a mold resin portion. The anode lead frame includes an anode terminal portion and a rising portion. The rising portion is formed integral with the anode terminal portion, extends from the anode terminal portion through the mold resin and is connected to an anode portion. At the rising portion, a catching portion receiving and supporting the anode portion from below and a hook portion surrounding and holding an outer circumferential surface of the anode portion, with the anode portion received in the catching portion, are formed. Therefore, a solid electrolytic capacitor can be provided, which allows highly accurate attachment of the capacitor element on the lead frame without applying any additional member and reduces equivalent series resistance. | 06-11-2009 |
20090147449 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor includes a capacitor element, an anode lead frame, a cathode lead frame, and a mold resin portion. The anode lead frame includes an anode terminal portion and a rising portion, and the anode terminal portion is exposed at the bottom surface of the mold resin portion. The rising portion is formed integral with the anode terminal portion, and rises to the anode portion. In the rising portion, a through hole is formed. The cathode lead frame includes a cathode terminal portion, a pair of side surface portions and a step portion. Thus, a solid electrolytic capacitor allowing highly accurate and reliable attachment of the capacitor element to the lead frame without using any additional member is provided. | 06-11-2009 |
20090231784 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor of the present invention includes: a capacitor element having an anode leading part and a cathode leading part; an anode lead frame connected to the anode leading part and a cathode lead frame connected to the cathode leading part; and an packing resin with which the capacitor element is coated, and the anode leading part protrudes from one end face of the capacitor element. The anode lead frame includes: an anode terminal part having an exposed surface exposed from the packing resin, a rising part connected to the anode terminal part, bent toward the anode leading part located in the upper part of the anode terminal part and extending in the packing resin, and a bent part connected to the rising part and bent along a direction which is parallel to a protruding direction of the anode leading part and connected to the anode leading part. | 09-17-2009 |
20110228448 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor including a capacitor element having an anode member and a cathode member, an anode terminal electrically connected with the anode member, a cathode terminal electrically connected with the cathode member, and a mold resin portion covering the capacitor element; wherein the cathode terminal has an upper step portion, a lower step portion, and a side portion, the upper step portion is connected with the cathode member, the lower step portion is exposed out of the mold resin portion, the side portion is extended along with a side surface of the cathode member from the upper step portion and is connected with the side surface, and the side portion is longer than the upper step portion, in a direction in which the cathode terminal and the anode terminal are aligned. | 09-22-2011 |
20110249375 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor includes a capacitor element, an anode lead frame, a cathode lead frame, and a mold resin portion. The anode lead frame includes an anode terminal portion and a rising portion, and the anode terminal portion is exposed at the bottom surface of the mold resin portion. The rising portion is formed integral with the anode terminal portion, and rises to the anode portion. In the rising portion, a through hole is formed. The cathode lead frame includes a cathode terminal portion, a pair of side surface portions and a step portion. Thus, a solid electrolytic capacitor allowing highly accurate and reliable attachment of the capacitor element to the lead frame without using any additional member is provided. | 10-13-2011 |
Patent application number | Description | Published |
20110158453 | MICROPHONE UNIT - The microphone unit of the present invention comprises an electro-acoustic converter for converting an acoustic signal to an electric signal, the converter having a diaphragm displaced by acoustic pressure; and a housing provided with an accommodation space for accommodating the electro-acoustic converter, and with an acoustic path for guiding outside sound from an acoustic hole to the diaphragm. An external-connection electrode having the same function is formed on a first external surface belonging to the housing and having the acoustic hole, and on a second external surface on the side opposite the first external surface of the housing. | 06-30-2011 |
20110164760 | SOUND SOURCE TRACKING DEVICE - The sound source tracking device of the present invention comprises a plurality of differential microphones having bidirectionality, and a support member adapted to support the plurality of differential microphones such that the plurality of differential microphones are disposed in an array within a given plane. The plurality of differential microphones are supported on the support member such that their principal axes of directionality are approximately orthogonal to the given plane. | 07-07-2011 |
20120257777 | MICROPHONE UNIT AND VOICE INPUT DEVICE COMPRISING SAME - A microphone unit ( | 10-11-2012 |
20130069180 | ELECTRO-ACOUSTIC CONVERSION DEVICE MOUNT SUBSTRATE, MICROPHONE UNIT, AND MANUFACTURING METHOD THEREFOR - The disclosed substrate ( | 03-21-2013 |
20130136292 | MICROPHONE UNIT - A microphone unit ( | 05-30-2013 |
20140029246 | LIGHTING DEVICE - A lighting device includes a light emitting element, a board, a cover, and a diffuse reflector. The light emitting element is disposed on the board. The cover houses the light emitting element and the board. The diffuse reflector is disposed on the cover opposite a light emission face of the light emitting element. The diffuse reflector is configured to diffuse and reflect light from the light emitting element. The diffuse reflector has a thickness at a portion opposite the light emission face of the light emitting element that is greater than a thickness at a portion away from the portion opposite the light emission face of the light emitting element. | 01-30-2014 |
Patent application number | Description | Published |
20120025182 | DONOR SUBSTRATE, PROCESS FOR PRODUCTION OF TRANSFER FILM, AND PROCESS FOR PRODUCTION OF ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides a donor substrate, a process for production of a transfer film, and a process for production of an organic electroluminescent element, that allow obtaining a transfer film having a uniform composition distribution by way of a simple configuration. A donor substrate of the present invention is a substrate comprising a photothermal conversion layer and a donor layer, wherein the donor layer has a first organic layer arranged on a side of a transfer surface, and a second organic layer arranged on a side of the photothermal conversion layer; the first organic layer and the second organic layer are formed of vaporizable organic materials having dissimilar vaporization-starting temperatures; and the organic material that forms the first organic layer has a vaporization-starting temperature higher than that of the organic material that forms the second organic layer. | 02-02-2012 |
20120086330 | FORMATION METHOD OF AN ORGANIC LAYER, MANUFACTURING METHOD OF AN ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, AND ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A formation method of an organic layer ( | 04-12-2012 |
20120091482 | ORGANIC EL ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ORGANIC EL DISPLAY DEVICE | 04-19-2012 |
20120098420 | ORGANIC EL ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ORGANIC EL LIGHTING APPARATUS | 04-26-2012 |
20160002238 | COMPOUND, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION DEVICE - This compound is represented by the following general formula (IA) or (IB) (in the formula, R | 01-07-2016 |