Patent application number | Description | Published |
20100055587 | METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING A TWO-DIMENSIONAL DOSAGE MAP AND CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. A method for creating glyphs is also disclosed, in which a two-dimensional dosage map of one or more shots is calculated, and the list of shots and the calculated dosage map are stored for later reference. | 03-04-2010 |
20100183963 | METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING A TWO-DIMENSIONAL DOSAGE MAP AND CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage information such as dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. | 07-22-2010 |
20110089344 | Method for Fracturing a Pattern for Writing with a Shaped Charged Particle Beam Writing System Using Dragged Shots - In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed. | 04-21-2011 |
20110089345 | METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor production using shaped beam charged particle beam lithography, a pattern is formed on a surface by dragging a charged particle beam across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape. In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam. The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process. | 04-21-2011 |
20110159434 | METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES HAVING DIFFERENT DOSAGES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes. | 06-30-2011 |
20110159435 | METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass. | 06-30-2011 |
20110159436 | METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage. | 06-30-2011 |
20120064440 | METHOD FOR DESIGN AND MANUFACTURE OF DIAGONAL PATTERNS WITH VARIABLE SHAPED BEAM LITHOGRAPHY - In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage information such as dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. | 03-15-2012 |
20120128228 | Method for Matching of Patterns - A method for matching of two detailed patterns is disclosed in which abstracts of each of the detailed patterns are created, where the abstracts are less complex than the detailed patterns. The abstracts are then compared to determine if the detailed patterns may possibly match, where comparison of the abstracts is faster than comparison of the detailed patterns. If comparison of the abstracts indicates a possible match, then the detailed patterns are compared, otherwise no detailed pattern comparison is needed. | 05-24-2012 |
20120217421 | METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH OVERLAPPING SHOTS - A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed. | 08-30-2012 |
20120219886 | METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH VARIABLE PATTERN DOSAGE - A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed. | 08-30-2012 |
20120281191 | METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes. | 11-08-2012 |
20130022929 | METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING SHAPED CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor production using shaped beam charged particle beam lithography, a pattern is formed on a surface by dragging a charged particle beam across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape. In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam. The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process. | 01-24-2013 |
20130101941 | METHOD FOR DESIGN AND MANUFACTURE OF PATTERNS WITH VARIABLE SHAPED BEAM LITHOGRAPHY - In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage information such as dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. | 04-25-2013 |
20130309608 | METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WITH DIFFERENT DOSAGES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes. | 11-21-2013 |
20130309609 | METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass. | 11-21-2013 |
20130309610 | METHOD AND SYSTEM FOR FORMING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage. | 11-21-2013 |