Patent application number | Description | Published |
20100053126 | ELECTRON EMISSION DEVICE AND IMAGE DISPLAY PANEL USING THE SAME, AND IMAGE DISPLAY APPARATUS AND INFORMATION DISPLAY APPARATUS - An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm. | 03-04-2010 |
20100060141 | ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME - In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion | 03-11-2010 |
20100159781 | METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS - An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film. | 06-24-2010 |
20100159783 | METHOD FOR PRODUCING ELECTRON-EMITTING DEVICE AND METHOD FOR PRODUCING IMAGE DISPLAY APPARATUS INCLUDING THE SAME - A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film. | 06-24-2010 |
20100159784 | METHOD FOR PRODUCING ELECTRON-EMITTING DEVICE AND METHOD FOR PRODUCING IMAGE DISPLAY APPARATUS INCLUDING THE SAME - A method for producing an electron-emitting device includes forming an electrode above a top surface of an insulation layer including the top surface and a side surface connected to the top surface; forming a first conductive film on the insulation layer so as to be separated from the electrode and extend from the top surface to the side surface; forming a second conductive film on the first conductive film so as to extend from the top surface to the side surface; and etching the second conductive film. | 06-24-2010 |
20100159790 | METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS USING THE SAME - A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer. | 06-24-2010 |
20100187095 | MANUFACTURING METHOD OF A BORIDE FILM, AND MANUFACTURING METHOD OF AN ELECTRON-EMITTING DEVICE - A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening portion is located becomes higher than a plasma density in a region shielded by the shield member. | 07-29-2010 |
20100187096 | MANUFACTURING METHOD OF AN ELECTRON-EMITTING DEVICE, AND MANUFACTURING METHOD OF A LANTHANUM BORIDE FILM - A lanthanum boride film is deposited on a substrate by means of a sputtering method while moving the substrate and a target of lanthanum boride relative to each other in a state where the substrate and the target are arranged in opposition to each other. When a mean free path of sputtering gas molecules at the time of deposition is λ (mm) and a distance between the substrate and the target is L (mm), a ratio of L/λ is set to a value equal to or larger than 20. A value which is obtained by dividing a discharge power value by an area of the target is set to be in a range of from 1 W/cm | 07-29-2010 |
20100201246 | ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME - An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion. | 08-12-2010 |
20130015360 | RADIATION DETECTORAANM Kobayashi; TamakiAACI Isehara-shiAACO JPAAGP Kobayashi; Tamaki Isehara-shi JPAANM Saito; TatsuyaAACI Kawasaki-shiAACO JPAAGP Saito; Tatsuya Kawasaki-shi JPAANM Yasui; NobuhiroAACI Yokohama-shiAACO JPAAGP Yasui; Nobuhiro Yokohama-shi JPAANM Den; ToruAACI TokyoAACO JPAAGP Den; Toru Tokyo JP - A radiation detector including a scintillator structure comprising a first plane and a second plane which are not positioned on the same plane, the scintillator structure having an optical waveguiding property in a direction between the first plane and the second plane; and a two-dimensional light receiving element formed of multiple pixels which are disposed parallel to either one of the first plane and the second plane. The radiation detector includes at least one smoothness-deteriorate region which is positioned in one of the first plane and the second plane of the scintillator structure and has an area of 1/6 or more of a light receiving area of each of the multiple pixels. The region is repaired by an optically transparent material so as to be smoothed. | 01-17-2013 |
20140264044 | SCINTILLATOR MATERIAL AND RADIATION DETECTOR USING SAME - Improvement in luminescence intensity is demanded from a scintillator material. The present invention provides a new scintillator material by adding a specific element selected from thallium and indium to a material having a basic composition represented by an alkali element:copper:a halogen element=3:2:5. | 09-18-2014 |