Patent application number | Description | Published |
20140353066 | REAR WHEEL STEERING APPARATUS FOR VEHICLE - A rear wheel steering apparatus for a vehicle includes a housing, an electric motor, a planetary gear mechanism, a linear motion mechanism including a nut member and a rod threadedly engaged with the nut member, the housing including a cylindrical body which includes a lock portion provided at an inner surface of the cylindrical body, the housing including a connection cover, a cylindrical holding member holding a ring gear within the cylindrical body in a state where the ring gear is prevented from rotating, and a bearing, wherein the bearing and the cylindrical holding member are disposed and held between the lock portion and the connection cover, and the cylindrical holding member is held to be non-rotatable relative to the cylindrical body. | 12-04-2014 |
20140353067 | REAR WHEEL STEERING APPARATUS FOR VEHICLE - A rear wheel steering apparatus for a vehicle includes a housing including a cylinder portion and a connection cover, an electric motor housed in the housing, a speed reduction mechanism housed in the housing, a linear motion mechanism including a nut member and a rod for converting a rotation of the nut member to a linear motion of the rod, the cylinder portion including a stopper portion provided at an inner surface of thereof between the electric motor and the speed reduction mechanism, a cylindrical holding member holding the speed reduction mechanism in the cylinder portion, and a bearing supporting the nut member for allowing the nut member to rotate relative to the cylindrical holding member. The bearing and the cylindrical holding member are sandwiched between the stopper portion and the connection cover and the cylindrical holding member is retained so as not to rotate relative to the cylinder portion. | 12-04-2014 |
20140353071 | DISPLACEMENT DETECTION APPARATUS FOR LINEAR MOTION MECHANISM AND REAR WHEEL STEERING APPARATUS FOR VEHICLE INCLUDING THE SAME - A displacement detection apparatus for a linear motion mechanism includes a nut member, a rod including elongate grooves elongating in an axial direction of the rod and a through hole, a permanent magnet disposed parallel to the rod, a magnet block made of synthetic resin and including a retaining portion holding the permanent magnet, a pair of leg portions extending from ends of the retaining portion that are spaced apart, and a nut made of metal insert-molded at an intermediate position between the pair of leg portions, and a displacement sensor disposed opposing to the permanent magnet. The pair of leg portions and the nut of the magnet block are disposed in the elongate groove of the rod and the magnet block is fixed to the rod by a bolt screwed to the nut, the bolt penetrating through the through hole extending through the rod. | 12-04-2014 |
20160083005 | REAR WHEEL STEERING APPARATUS FOR VEHICLE - A rear wheel steering apparatus for a vehicle includes: a housing connected via first and second connecting members to a suspension mechanism supporting rear wheels of a vehicle; an electric motor accommodated in the housing; a planetary gear mechanism having a sun gear connected to an output shaft of the electric motor, a ring gear non-rotatably supported inside the housing, a planetary gear meshing with the ring gear and the sun gear, and a carrier connected to the planetary gear, and reducing the output of the electric motor; and a linear motion mechanism having a nut member connected to the planetary gear mechanism and forming the carrier, and a rod screwed to the nut member and connected to the second connecting member, and converting the rotational motion of the nut member into the linear motion of the rod. | 03-24-2016 |
Patent application number | Description | Published |
20090165901 | ALUMINUM ALLOY CLAD SHEET FOR A HEAT EXCHANGER AND ITS PRODUCTION METHOD - Disclosed herein is an aluminum alloy clad sheet for a heat exchanger including a core layer, a sacrificial layer formed on one surface of the core layer, and a filler layer including an Al—Si based alloy formed on the other surface of the core layer. The core layer includes a predetermined amount of Si, Cu, Mn, Ti, and Mg, the remainder including Al and inevitable impurities, and the sacrificial layer includes a predetermined amount of Si, Mn, and Zn, the remainder including Al and inevitable impurities. The core layer has a crystal grain size after the brazing heat treatment at 595° C. for 3 minutes of at least 50 μm and less than 300 μm. The filler layer and the sacrificial layer are defined for their thickness, and the number of intermetallic compounds in the core layer is also defined to a predetermined range. By such constitution, the aluminum alloy clad sheet has improved fatigue life and post-braze strength, high corrosion resistance, and excellent erosion resistance and brazeability. | 07-02-2009 |
20110027610 | ALUMINUM ALLOY CLAD MATERIAL - Disclosed is an aluminum alloy clad material which includes a core material; a sacrificial anode material on one surface of the core material; and a filler material on the other surface of the core material and composed of an Al—Si alloy, in which the core material contains 0.3 to 2.0 percent by mass of Mn, 0.15 to 1.6 percent by mass of Si, 0.1 to 1.0 percent by mass of Cu, and 0.1 to 1.0 percent by mass of Mg, with the remainder including Al and inevitable impurities, the sacrificial anode material contains 7.0 to 12.0 percent by mass of Zn, 0.3 to 1.8 percent by mass of Mn, and 0.3 to 1.2 percent by mass of Si, with the remainder including Al and inevitable impurities, and has a thickness of 10 to 30 μm. The sacrificial anode material shows resistance to both local corrosion and general corrosion. | 02-03-2011 |
20110236717 | ALUMINUM ALLOY BRAZING SHEET - There is provided an aluminum alloy brazing sheet having an improved brazability than in the related art while keeping the post-braze strength, workability, corrosion resistance, and the like at respective prescribed or higher levels. An aluminum alloy brazing sheet has a two-layered structure in which on one side of a core material, a brazing material is provided. The core material contains Si: 0.6 to 1.0 mass %, Cu: 0.6 to 1.0 mass %, Mn: 0.7 to 1.8 mass %, Mg: 0.1 to 0.7 mass %, and Ti: 0.06 to 0.20 mass %, and the balance including Al and inevitable impurities. The brazing material includes an aluminum alloy containing Si: 3.0 to 12.0 mass %, the gage of the aluminum alloy brazing sheet is 0.6 to 1.4 mm, and the area ratio of a {001} plane in the core material surface is 0.3 or more. | 09-29-2011 |
20110240280 | ALUMINUM ALLOY BRAZING SHEET AND HEAT EXCHANGER - The present invention provides an aluminum alloy brazing sheet that is applied particularly to a tube material of a heat exchanger and is excellent in brazability and erosion resistance. | 10-06-2011 |
20110287276 | ALUMINIUM ALLOY BRAZING SHEET - To provide an aluminium alloy brazing sheet which can improve erosion resistance while maintaining post-braze strength, brazability, formability, corrosion resistance and other properties even when Mg is added to the core material. The aluminium alloy brazing sheet comprises an Al—Si-based or Al—Si—Zn-based filler material cladded on at least one side of a core material. The core material comprises Si: 0.3 to 1.0% by mass, Mn: 0.6 to 2.0% by mass, Cu: 0.3 to 1.0% by mass, Mg: 0.15 to 0.5% by mass, Ti: 0.05 to 0.25% by mass, with the remainder being Al and inevitable impurities, and has the density of an Mg—Si-based, Al—Mg—Cu-based, Al—Cu—Mg—Si-based intermetallic compound with a particle size smaller than 0.5 μm of 10000/mm2 or higher, or has the density of the Mg—Si-based, Al—Mg—Cu-based and Al—Cu—Mg—Si-based intermetallic compounds with a particle size of 1.0 μm or larger lower than 5000/mm2. | 11-24-2011 |
20110287277 | ALUMINUM ALLOY BRAZING SHEET - An aluminum alloy brazing sheet includes a core material containing Si, Cu and Mn by a predetermined amount, the balance being Al and inevitable impurities, a sacrificial anode material disposed on one face side of the core material and containing Si, Zn and Mg by a predetermined amount, the balance being Al and inevitable impurities, and a brazing filler material disposed on the other face side of the core material and formed of an aluminum alloy, and the area fraction of Zn—Mg-based intermetallic compounds with 2.0 μm or above particle size on the surface of the sacrificial anode material may be 1.0% or below. Or otherwise, in the aluminum alloy brazing sheet, the number density of Al—Cu-based intermetallic compounds with 0.5 μm or above particle size inside the core material may be 1.0 piece/μm | 11-24-2011 |
20130059162 | FLUX COMPOSITION AND BRAZING SHEET - Disclosed are: a flux composition which is used for brazing of a magnesium-containing aluminum alloy material, suppresses the formation of high-melting compounds, provides better wettability, and thereby exhibits better brazability even applied in a small mass of coating; and a brazing sheet using the flux composition. The flux composition for brazing of a magnesium-containing aluminum alloy material includes a flux component [A] containing fluorides as principal components; and an additive [B] being at least one selected from the group consisting of CeF | 03-07-2013 |
20130244055 | ALUMINUM ALLOY BRAZING SHEET FOR HEAT EXCHANGER - An aluminum alloy brazing sheet for heat exchangers has a core, a sacrificial material formed on one side of the core, and a brazing filler metal formed on the other side of core. The core is made of an aluminum alloy containing predetermined amounts of Si, Cu, and Mn, the balance being Al and unavoidable impurities. The sacrificial material is made of an aluminum alloy containing predetermined amounts of Si, Zn, and Mg with the balance of Al and unavoidable impurities. The brazing filler metal is made of an aluminum alloy. The aluminum alloy brazing sheet for heat exchangers has a work hardening exponent n of not less than 0.05. The aluminum alloy brazing sheet for heat exchangers has excellent strength and corrosion resistance even when it is formed into a thin material and also has excellent high frequency weldability and weld cracking resistance during electric resistance welding (high frequency welding properties). | 09-19-2013 |
20130260175 | ALUMINUM ALLOY BRAZING SHEET FOR HEAT EXCHANGER - An aluminum alloy brazing sheet for heat exchangers has a core, a sacrificial material formed on one side of the core, and a brazing filler metal formed on the other side of the core. The core is made of an aluminum alloy containing Si, Cu, Mn, and Al. The sacrificial material is made of an aluminum alloy containing Si, Zn, Mg, and Al. The brazing filler metal is made of an aluminum alloy. The aluminum alloy brazing sheet for heat exchangers has a work hardening exponent n of not less than 0.05. The core has an average crystal grain size of not more than 10 μm in a cross-section. The aluminum alloy brazing sheet for heat exchangers has excellent strength and corrosion resistance even when it is formed into a thin material and also has excellent high frequency weldability and weld cracking resistance during electric resistance welding. | 10-03-2013 |
20150047745 | FLUX COMPOSITION AND BRAZING SHEET - Disclosed is a flux composition for use in brazing of an aluminum alloy material and includes a flux component [A] containing KAlF | 02-19-2015 |
20160059362 | FLUX COMPOSITION AND BRAZING SHEET - This brazing flux composition for an aluminum alloy is characterized by containing [A] a flux component containing KAlF | 03-03-2016 |
Patent application number | Description | Published |
20090169905 | COMPOSITION CONTAINING FLUORINE-CONTAINING AROMATIC POLYMER AND LAMINATED BODY CONTAINING FLUORINE-CONTAINING AROMATIC POLYMER - A composition comprises a fluorine-containing aromatic polymer, an epoxy compound and an initiator. Its use as film, laminate with polyimide or copper foils, copper-clad laminated board and adhesive film. The fluorine-containing aromatic polymer is preferably a fluorine-containing aryl ether polymer. The initiator is preferably a cationic initiator. | 07-02-2009 |
20100150510 | FLEXIBLE OPTICAL WAVEGUIDE, PROCESS FOR ITS PRODUCTION, AND EPOXY RESIN COMPOSITION FOR FLEXIBLE OPTICAL WAVEGUIDES - The present invention provides a flexible optical waveguide in which at least one of a lower cladding layer, a core layer, and an upper cladding layer is composed of an epoxy film formed using an epoxy resin composition containing a polyglycidyl compound having a polyalkylene glycol chain(s) and at least two glycidyl groups or an epoxy film having a glass transition temperature (Tg) of 100° C. or lower, a process for its production, and an epoxy resin composition for flexible optical waveguides. | 06-17-2010 |
20120041233 | FLUOROSULFONYL IMIDE SALT AND METHOD FOR PRODUCING FLUOROSULFONYL IMIDE SALT - The present invention provides a method for producing a fluorisulfonylimide salt, which enables reducing the impurity content and continuous operation for a long time, and a fluorosulfonyl imide salt. The fluorosulfonyl imide salt of the present invention has a K content of 10,000 ppm or less. The method for producing a fluorosulfonyl imide salt of the present invention is that after a fluorination reaction of chlorosulfonyl imde or a salt thereof, the reaction solution is brought into contact with an aqueous alkaline solution so as to remove impurities. The fluorosulfonyl imide salt of the present invention, in which various impirities are reduced to extremely low levels, is useful as an electrolyte used in a lithium secondary battery, a capacitor or the like, an ionic liquid, or an intermediate for a sulfonyl imide salt, and the like. It is expected that use of the fluorosulfonyl imide salt of the present invention as an electrolyte leads to a high-performance electrochemical device. | 02-16-2012 |
20130068991 | ALKALI METAL SALT OF FLUOROSULFONYL IMIDE, AND PRODUCTION METHOD THEREFOR - The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation. | 03-21-2013 |
20150086466 | ALKALI METAL SALT OF FLUOROSULFONYL IMIDE, AND PRODUCTION METHOD THEREFOR - The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation. | 03-26-2015 |
Patent application number | Description | Published |
20150271457 | DISPLAY DEVICE, IMAGE DISPLAY SYSTEM, AND INFORMATION PROCESSING METHOD - According to an embodiment, a display device includes a projector to project light including information about a projection image; an optical member to transmit light from an information processing device but reflect the light including the information, the information processing device including a detector to detect touch operation onto a display screen and a display displaying a first image representing a display image; and a first obtainer to obtain the projection image formed by transforming a second image, which includes a non-overlapping area of the display image representing an area not overlapping with a part of the first image, based on position of the display such that, from light having come from the information processing device and having passed through the optical member and from the light including the information having reflected from the optical member, a state in which the non-overlapping area is present around the display is viewable. | 09-24-2015 |
20150331243 | DISPLAY DEVICE - According to one embodiment, a display device includes a display, a first optical element, and a reflector. The display unit includes a first pixel emitting a first light, and a second pixel emitting a second light. The first optical element has an incident surface and an emission surface. A diameter of a bundle of rays of the first light at the incident surface is a first value. A diameter of a bundle of rays of the second light at the incident surface is a second value. A diameter of the bundle of rays of the first light at the emission surface is a third value. A diameter of the bundle of rays of the second light at the emission surface is a fourth value. A ratio of the third value to the first value is different from a ratio of the fourth value to the second value. | 11-19-2015 |
20150331482 | DISPLAY DEVICE - According to one embodiment, a display device includes a display unit, an optical unit, and a reflector. The display unit includes a plurality of pixels arranged in a first plane. The display unit emits light including image information. At least a portion of the light emitted by the display unit is incident on the optical unit. The optical unit includes a first optical element. A travel direction of the at least the portion of the light is modified by the first optical element. The reflector reflects the at least the portion of the light modified by the first optical element. A perpendicular direction perpendicular to the first plane is non-parallel to an optical axis of the first optical element. | 11-19-2015 |
20150338654 | DISPLAY - According to one embodiment, a display includes a projector, a first optical unit, and a second optical unit. The projector emits a first light including image information. The first optical unit transmits at least a portion of a second light. The second optical unit reflects at least a portion of the first light and transmits at least a portion of the second light. A light reflectance of the first optical unit is lower than a light reflectance of the second optical unit, and a light absorptance of the first optical unit is higher than a light absorptance of the second optical unit. | 11-26-2015 |
20150338655 | DISPLAY DEVICE - According to one embodiment, a display device includes a light emitter and a reflector. The light emitter emits light including image information. The reflector has a plurality of reflective surfaces arranged in a first direction. The reflective surfaces reflect a portion of the light. A length in a second direction of one of the reflective surfaces is longer than a length in the first direction of the one of the reflective surfaces. The second direction intersects the first direction. A first plane is tilted with respect to a second plane. The first plane includes an incident direction of the light at the reflector and a reflection direction of the light at the reflector. The second plane includes the first direction and the second direction. The second direction is tilted with respect to an intersection line between the first plane and the second plane. | 11-26-2015 |
20150338656 | DISPLAY DEVICE - According to one embodiment, a display device includes a display unit, a reflective/transmissive unit, and an optical unit. The display unit emits image light including image information. The reflective/transmissive unit reflects at least a portion of the image light and transmits at least a portion of background light. The optical unit is provided between the display unit and the reflective/transmissive unit in an optical path of the image light. A refractive power of the optical unit is determined according to a refractive power of the reflective/transmissive unit for the background light passing through the reflective/transmissive unit. | 11-26-2015 |
20150338657 | DISPLAY DEVICE - A display device includes a first optical part that reflects at least part of incident light and a projection part that projects image light including the image information. The first optical part includes a first base, a reflective layer, a second base, and an intermediate layer. The refractive index of the first base, the refractive index of the second base, and the refractive index the intermediate layer are about the same value. | 11-26-2015 |
20150338662 | DISPLAY DEVICE - According to one embodiment, a display device includes a position controller, a projection unit, and a reflector. The projection unit emits light including image information. The projection unit is held by a holder. The position controller is interposed between the holder and the projection unit. The reflector reflects at least a portion of the light emitted from the projection unit. The reflector is held by the holder. A position of the reflector with respect to the holder is fixed. A relative arrangement of the projection unit and the reflector is changeable by the position controller. | 11-26-2015 |
Patent application number | Description | Published |
20110158275 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. | 06-30-2011 |
20110158277 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE - A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than −0.5 degrees and not more than +0.5 degrees. | 06-30-2011 |
20110164638 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE - In a group-III nitride semiconductor laser device, a laser structure includes a support base comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface, and a semiconductor region provided on the semipolar principal surface of the support base. An electrode is provided on the semiconductor region of the laser structure. An angle between a normal axis to the semipolar principal surface and the c-axis of the hexagonal group-III nitride semiconductor is in a range of not less than 45° and not more than 80° or in a range of not less than 100° and not more than 135°. The laser structure includes a laser stripe extending in a direction of a waveguide axis above the semipolar principal surface of the support base. The laser structure includes first and second surfaces and the first surface is a surface opposite to the second surface. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal group-III nitride semiconductor and the normal axis, a laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The waveguide axis extends from one to the other of the first and second fractured faces. The laser structure has first and second recesses provided each at a portion of the edge of the first surface in the first fractured face. The first and second recesses extend from the first surface of the laser structure, and bottom ends of the first and second recesses are located apart from the edge of the second surface of the laser structure. The first recess has an end at the first surface and the second recess has an end at the first surface. A first distance between the laser stripe and the end of the first recess is smaller than a second distance between the laser stripe and the end of the second recess. | 07-07-2011 |
20110176569 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure | 07-21-2011 |
20110228804 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 09-22-2011 |
20110292956 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch | 12-01-2011 |
20110299560 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. | 12-08-2011 |
20110300653 | METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device. | 12-08-2011 |
20120027039 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure | 02-02-2012 |
20120100654 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 04-26-2012 |
20120107968 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE - A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 05-03-2012 |
20120135554 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 05-31-2012 |
20120142130 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. | 06-07-2012 |
20120214268 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar. | 08-23-2012 |
20120258557 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE - A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. | 10-11-2012 |
20120269220 | III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER DEVICE - A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device. | 10-25-2012 |
20130065336 | METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade | 03-14-2013 |
20130065337 | METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a group-III nitride semiconductor laser device having a semi-polar surface provides a laser cavity mirror which can reduce lasing threshold current. A support plate H tilts at an angle THETA from an m-axis toward a reference plane Ab defined by a direction PR of travel of the blade | 03-14-2013 |
20130280837 | METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade | 10-24-2013 |
20130295704 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. | 11-07-2013 |
20140056324 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer. | 02-27-2014 |
20150270686 | GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD FOR EVALUATING END FACET FOR OPTICAL CAVITY OF GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR EVALUATING SCRIBE GROOVE - A group III nitride semiconductor laser device comprises a laser structure including a support base of the group III nitride and first and second end facets for a laser cavity, and the first and second end facets intersect with an m-n plane defined by the m-axis of the group III nitride and an axis normal to a semipolar primary surface of the support base. A +c axis vector for a c-axis of the group III nitride forms an angle ALPHA in a range of 71 to 79 degrees with the normal axis. The +c axis vector is inclined at an angle α1 of 10 to 25 degrees with one normal vector defined at one edge of the first end facet, and is inclined at an angle β1 of zero to 5 degrees with another normal vector defined at the other edge of the first end facet. | 09-24-2015 |
Patent application number | Description | Published |
20090167871 | INFORMATION RECORDING AND REPRODUCING DEVICE AND COPYING METHOD FOR BACKING UP INFORMATION - An information recording and reproducing device for recording or reproducing one or more stream data blocks is arranged to have a setting unit for setting an operation mode about whether or not and how a backup data copy of one or more stream data blocks is created onto an external device and a generating unit for generating a script for executing a copy of only the backup data selected at the operation mode if the backup data copy is created onto the external device. | 07-02-2009 |
20110131575 | RECORDING/REPRODUCING APPARATUS - A recording/reproducing apparatus, for producing a virtual disc independent upon a host PC, and for managing virtual discs with an easy operation, comprises a CPU | 06-02-2011 |
20110202580 | STORAGE EQUIPMENT - [Object] Portable-type storage equipment that by itself enables data control such as analysis of data recorded or to be recorded in recording media even under the environment where a host system such as a host PC does not exist. | 08-18-2011 |
20110235805 | STORAGE SYSTEM AND METHOD FOR GENERATING ENCRYPTION KEY IN THE STORAGE SYSTEM - In a storage system including a plurality of recording medium drives and encrypting and recording data with a device key, even if a recording medium drive fails and is replaced with another drive, the data stored by the failed recording medium drive can be reproduced. The plurality of recording medium drives has not only their own device keys, but also copies of the device keys of the other recording medium drives. If any one of the recording medium drives is replaced and data in a recording medium mounted in the replaced recording medium drive cannot be decrypted, the drive queries the other recording medium drives to acquire a copy of a device key of a recording medium drive used in the past and decrypts the encrypted data. | 09-29-2011 |
20120311626 | DISTRIBUTING APPARATUS FOR CONTENT LIST AND CONTENT, AND TRANSMITTING METHOD - A distributing apparatus including a communication processor unit to execute transmission of data between a content receiving apparatus connected through a network; a content list producer unit to produce an optical disc content list for when loaded in the optical disc drive apparatus, while to produce a recording medium content list when the optical disc is not loaded; a content list transmitter unit; a content transmitter unit; an authenticator unit; a key producer unit, which is configured to produce key information necessary for encoding the content(s) to be transmitted by the content transmitter unit; and an encoder unit, which is configured to encode the content(s) with using the key information in the key producer unit. | 12-06-2012 |
20130223197 | LIBRARY APPARATUS - In a library apparatus, it is not considered that eliminated is an operation for reversing a direction of a double-sided readable/writable recording medium. In the library apparatus having a function of transporting and loading a recording medium from a recording medium storage unit to a recording and reproducing unit through a recording medium transportation unit, a direction in which an unrecorded recording medium is first loaded in the recording and reproducing unit is afterward treated as a front surface, and a direction opposite to the above direction is treated as a rear surface. | 08-29-2013 |
20130258826 | RECORDING/REPRODUCING SYSTEM AND SERVER - A reproducing process of related data is efficiently performed also in a recording medium having recording surfaces at both of front and rear surfaces in a recording and reproducing system including a plurality of recording media. | 10-03-2013 |