Patent application number | Description | Published |
20090017645 | CONNECTOR - A first contact and a second contact are inserted into one and the same inserting hole of a housing so that contact portions of the first and second contacts are facing to each other. The first contacts each include the contact portion at one end and a connection portion at the other end. The second contacts each includes a first piece having the contact portion at one end and a pressure receiving portion at the other end, a second piece having connection portion at an outer end, and an elastic jointing-portion for jointing the first piece and the remaining end of the second piece. A pivoting member includes an actuating portion, pushing portions, and anchoring holes. The pushing portions are pivotally moved between the pressure receiving portions and the connection portions of the second contacts, during which pivotal movement, the axis of rotation of the pushing portions is moved with their pivotal movement to achieve their compact rotation. The second contacts are each provided on the second piece with a fixing portion in the proximity of the elastic jointing-portion. The connector constructed as above described prevents the contacts from being warped or deformed when the pivoting member is being pivotally moved, and achieves a stable electrical connection, a reduced overall height of the connector and a high density of the conductors. | 01-15-2009 |
20090130881 | CONNECTOR - A connector to be detachably fitted with a connecting object, includes a required number of contacts, a housing, and a pivoting member acting upon the contacts to bring them into contact with a connecting object. In case of having many contacts, at least one contact is provided with an extended portion at a tip of its pressure receiving portion to extend toward its connection portion, and instead of a pushing portion of the pivoting member acting upon the contact, the pivoting member is provided with an engaging rod to engage the extending portion of the contact. The contact is arranged at an optional position so as to prevent the pivoting member from being warped. The contacts are arranged in a single row, or alternately arranged to be staggered. With the connector thus constructed, the pivoting member is not damaged when pivotally moving after the connecting object has been inserted to achieve a stable electrical connection even with very small pitches of contacts and very thin walls of the housing. | 05-21-2009 |
20090298315 | CONTACT AND CONNECTOR USING THE SAME - A contact has at least one contact portion adapted to contact a first connecting object and a connection portion to be connected to a second connecting object. The contact is provided with an protruded contact portion positioned between the contact portion provided at a free end of the contact and the connection portion and curved and substantially aligned with the contact portion. A member having a pushing portion for pushing the first connecting object is so arranged that the pushing portion is in a position facing to the protruded contact portion. With the contacts thus constructed, even if a great number of the contacts are arranged, large forces are not required for inserting and fitting a connecting object in a connector using the contacts, thereby achieving a stable electrical connection. Moreover, the contacts can be arranged with extremely narrow pitches in a connector, and using the contacts, it is possible to construct reduced overall height connectors, and connectors miniaturized particularly in the inserting direction of a connecting object. | 12-03-2009 |
20100197674 | OXOPYRAZINE DERIVATIVE AND HERBICIDE - The present invention is to provide an oxopyrazine derivative having an excellent herbicidal activity and besides exhibiting high safety for useful crops and the like, or a salt thereof, and a herbicide containing the same. | 08-05-2010 |
20100210704 | 3-ALKOXY-1-PHENYLPYRAZOLE DERIVATIVES AND PESTICIDES - To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment. | 08-19-2010 |
20110067612 | PESTICIDAL COMPOSITION AND METHOD FOR CONTROLLING PEST - To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant. | 03-24-2011 |
20120231646 | CONNECTOR - It is the object of the present invention to provide a connector | 09-13-2012 |
20130102568 | ALKOXYIMINO DERIVATIVE AND PEST CONTROL AGENT - [PROBLEMS] The present invention provides a novel alkoxyimino derivative or a salt thereof, as well as to a pest control agent containing the derivative or salt thereof as an active ingredient, which shows an excellent pest control effect on a wide range of pests in the agricultural and horticultural field and is also capable of controlling resistant pests. | 04-25-2013 |
20130137577 | OXOPYRAZINE DERIVATIVE AND HERBICIDE - The present invention is to provide an oxopyrazine derivative having an excellent herbicidal activity and besides exhibiting high safety for useful crops and the like, or a salt thereof, and a herbicide containing the same. | 05-30-2013 |
20140357111 | CONNECTOR - It is the object of the present invention to provide a connector | 12-04-2014 |
Patent application number | Description | Published |
20100193796 | Semiconductor device - The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer. | 08-05-2010 |
20100193799 | Semiconductor device and method of manufacturing semiconductor device - The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film. | 08-05-2010 |
20110017998 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. | 01-27-2011 |
20110018005 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer. | 01-27-2011 |
20110024831 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device (A | 02-03-2011 |
20110068353 | SEMICONDUCTOR DEVICE - A semiconductor device (A | 03-24-2011 |
20120012861 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches. | 01-19-2012 |
20120126249 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer. | 05-24-2012 |
20120132926 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film. | 05-31-2012 |
20130009256 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film. | 01-10-2013 |
20130168699 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. | 07-04-2013 |
20130277688 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer. | 10-24-2013 |
20130306983 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench. | 11-21-2013 |
20140014972 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. | 01-16-2014 |
20140054611 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches. | 02-27-2014 |
20140103364 | SWITCHING DEVICE - A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path. | 04-17-2014 |
20140138708 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 05-22-2014 |
20150144967 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film. | 05-28-2015 |
20150194492 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film. | 07-09-2015 |
Patent application number | Description | Published |
20120223338 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 09-06-2012 |
20120261676 | SiC FIELD EFFECT TRANSISTOR - A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region. | 10-18-2012 |
20130001680 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device (A | 01-03-2013 |
20130313576 | SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor power device of the present invention includes a first electrode and a second electrode, a breakdown voltage holding layer that is made of a semiconductor having a predetermined thickness and a predetermined impurity concentration, to which the first electrode and the second electrode are joined, and that has an active region in which carriers to generate electric conduction between the first electrode and the second electrode move, and an insulation film that is formed on the breakdown voltage holding layer and that has a high dielectric-constant portion having a higher dielectric constant than SiO | 11-28-2013 |
20130313635 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region. | 11-28-2013 |
20140034969 | SILICON CARBIDE TRENCH MOSFET HAVING REDUCED ON-RESISTANCE, INCREASED DIELECTRIC WITHSTAND VOLTAGE, AND REDUCED THRESHOLD VOLTAGE - A semiconductor device (A | 02-06-2014 |
20140346529 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more when the surface of the SiC semiconductor layer is covered with an insulating film. | 11-27-2014 |
20150034971 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. | 02-05-2015 |
20150123148 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - [Problem] To provide a semiconductor device in which the surface of a metal electrode arranged on the outermost surface can be made flat or smooth, and a method for producing said semiconductor device. | 05-07-2015 |
20150129893 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that can achieve both low on-resistance and high withstand voltage, while reducing the device size, improving the manufacturing yield, and reducing the cost. The semiconductor device | 05-14-2015 |
20150214354 | SEMICONDUCTOR DEVICE - This semiconductor device includes: a semiconductor layer having a structure in which a drain layer of a first conductivity type, a channel layer of a second conductivity type, and a source layer of a first conductivity type are layered in the stated order, the source layer being exposed on the outer surface of the semiconductor layer; a gate trench that passes through the source layer and through the channel layer from the outer surface of the semiconductor layer, the deepest section of the gate trench reaching the drain layer; a gate insulating film formed on the inside surface of the gate trench, the gate insulating film being formed correspondingly with respect to the outer surface of the semiconductor layer; and a gate electrode embedded inside the gate trench interposed by the gate insulating layer. A portion of the gate insulating film that abuts the outer surface of the semiconductor layer is thicker than a portion that abuts the channel layer at a side surface of the gate trench. | 07-30-2015 |
20150214355 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode. | 07-30-2015 |
20150295079 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - [Problem] To provide a semiconductor device wherein withstand voltage of a gate insulating film at the upper edge of a trench is improved, and a method for manufacturing the semiconductor device. | 10-15-2015 |