Patent application number | Description | Published |
20090174118 | Method and device for nano-imprinting - A nanoimprint system according to one embodiment of the present invention is a system for performing a pattern transfer onto an object to be molded by pressing a mold against the object to be molded using a head, characterized in that the head has a flat pressing surface during pressing the mold and is slid onto the mold while pressing the mold. | 07-09-2009 |
20100065986 | NANOIMPRINT METHOD AND APPARATUS - There is provided a nanoimprint apparatus. The nanoimprint apparatus transfers a pattern formed on a surface of a mold to a transfer layer which is formed partially or entirely on a side surface of a substantially cylindrical or columnar substrate. The nanoimprint apparatus includes: a first jig which is in contact with the substrate | 03-18-2010 |
20110066081 | Sensor-Based Health Monitoring System - Implementations for sensor-based health monitoring systems are generally disclosed. | 03-17-2011 |
20110148628 | CONTENT PROCESSING SYSTEM CAPABLE OF EVENT DETECTION AND CONTENT MANAGEMENT - In accordance with at least some embodiments of the present disclosure, a process for transmitting a signal is presented. The process may be implemented to detect an occurrence of a predetermined event associated with an object and in response to detecting the occurrence of the predetermined event, transmit a signal relating to a content associated with the object. | 06-23-2011 |
20110148814 | SENSOR SYSTEM AND OPTICAL TOUCH SENSOR - Provided is an optical touch sensor including an optical path through which light propagates, a metal layer disposed on the optical path, a flexible touch key configured to contact the metal layer when being bent, an incident light reflecting surface configured to make the light that propagates through the optical path be incident on the metal layer at an angle at which surface plasmon resonance occurs when the metal layer and the touch key are separated from each other, and a detector configured to detect reflected light from the metal layer and determine that the touch key is pressed in the case where an intensity of the reflected light increases. | 06-23-2011 |
20110152702 | Cardiac Arrest Monitoring Device - The present disclosure relates to devices, implementations and techniques for health monitoring. Embodiments of the present disclosure relate to cardiac arrest monitoring devices. | 06-23-2011 |
20120197162 | Sensor-Based Health Monitoring System - Implementations for sensor-based health monitoring systems are generally disclosed. | 08-02-2012 |
20150087092 | OPTO-MECHANICAL ALIGNMENT - Technologies are generally described for manufacturing an optical device by attaching a light-emitting element to an optical element through a resin. In various examples, a method is described, where a substrate is provided to have a through-hole at a position in the substrate where an optical element is to be mounted. A resin in liquid state may be injected into the through-hole in the substrate. Further, an optical element having a light-emitting portion may be mounted on the substrate such that a center of the tight-emitting portion is self-aligned with a center of the through-hole due to a surface tension of the resin in liquid state. The resin may be cured such that the optical element is fixed to the substrate. | 03-26-2015 |
Patent application number | Description | Published |
20080233363 | Recording Ink, Ink/Media Set, Ink Cartridge, Inkjet Recording Method and Inkjet Recording Apparatus - To provide a recording ink which contains at least a water-dispersible colorant, a water-dispersible resin, a wetting agent, a surfactant and water, wherein the content of the wetting agent in the recording ink is in the range of from 20% by mass to 35% by mass, the total solid content of the water-dispersible colorant and the water-dispersible resin in the recording ink is in the range of from 12% by mass to 40% by mass, the water-dispersible resin contains fluorine resin particulates, and the ratio A:B, where A is the solid content of the water-dispersible resin in the recording ink and B is the solid content of a pigment contained in the water-dispersible colorant in the recording ink, is in the range of 0.5 to 8. | 09-25-2008 |
20090043028 | INK-MEDIA SET, INK COMPOSITION, INK CARTRIDGE, INKJET RECORDING METHOD, INKJET RECORDING APPARATUS, AND INK RECORDED MATTER - An ink-media set, comprising an ink composition and a recording medium, wherein the ink composition comprises a polymer fine particle containing a dye and an inorganic pigment particle, a water-soluble solvent, and water, and has a surface tension of 20 mN/m to 35 mN/m at 25° C., and the recording medium comprises a support and a coating layer on at least one side of the support, and the amount of pure water transferred to the recording medium is no less than 2 ml/m2 and less than 35 ml/m2 at a contact period of 100 ms and the amount of pure water transferred to the recording medium is no less than 3 ml/m2 and less than 40 ml/m2 at a contact period of 400 ms by measurement of a dynamic scanning absorptometer. | 02-12-2009 |
20090098312 | RECORDING INK, INK CARTRIDGE, INKJET RECORDING METHOD, AND INKJET RECORDING APPARATUS - The present invention provides a recording ink including a composite pigment particle, a water-soluble solvent, and water, wherein the composite pigment particle is a primary particle coated with a coating resin, wherein the primary particle is a white pigment on the surface of which an oil-soluble dye is adsorbed or attached. In one aspect, the white pigment is preferably at least one selected from a white inorganic pigment, a pearl pigment, and an extender pigment, in another aspect, the coating resin is preferably one of a (meth)acrylic resin, a polyester resin, and a polyurethane resin, wherein the acid value of the coating resin is from 50 mgKOH/g to 250 mgKOH/g, and in another aspect, an average particle diameter (D50%) of the composite pigment particle is preferably 150 nm or less. | 04-16-2009 |
20090176070 | Pigment Dispersion, Recording Ink, Ink Cartridge, Ink-Jet Recording Method and Ink-Jet Recording Apparatus - A pigment dispersion is provided that includes a pigment, a pigment dispersant, a polymer dispersion stabilizer and water, wherein the polymer dispersion stabilizer is an alpha-olefin/maleic anhydride copolymer expressed by the formula (1) below. A recording ink is also provided that includes the pigment dispersion, a surfactant, a water-dispersible resin, a humectant and water. | 07-09-2009 |
20100196601 | RECORDING INK, INK CARTRIDGE, INK MEDIA SET, INK- JET RECORDING METHOD AND INK-JET RECORDING APPARATUS - An ink-jet recording ink including a colorant dispersible in water, a water-soluble organic solvent used as a wetting agent, a surfactant, a penetrant, a water-dispersible resin, and water, wherein when 2.5 g of the ink is weighed, placed in a glass Petri dish having a diameter of 33 mm and stored for 24 hr at a temperature of 50° C.±0.5° C. and a humidity of 12%±5%, the evaporation rate of a solvent (water+water-soluble organic solvent) in the ink is 50% by weight or more, and an ink residue has a viscosity of 20,000 mPa-S or greater, and wherein by storing the ink residue for 6 hr at a temperature of 23° C.±0.5° C. and a high humidity of 95%±3% to allow it to absorb moisture, the amount of moisture contained in the ink residue becomes 30% by weight to 40% by weight, in which case the ink residue has a viscosity of less than 500 mPa s. | 08-05-2010 |
20100196602 | INK SET, INK CARTRIDGE, INKJET RECORDING METHOD, AND INKJET RECORDING APPARATUS - An ink set includes at least two aqueous inks A and B with different colors, the inks A and B used in an inkjet recording method in which the inks A and B are superimposed for formation of a color image, wherein the ink A contains water-dispersible colorant A1 free of a surfactant-based dispersant, and anionic compound A2, and wherein the ink B contains water-dispersible colorant B1 containing a surfactant-based dispersant. | 08-05-2010 |
20100295891 | IMAGE FORMING METHOD AND IMAGE FORMED RECORD - An image forming method of the present invention including applying a pretreatment liquid to a recording medium, and discharging an inkjet recording ink dropwise according to an image signal to form an image on the recording medium on which the pretreatment liquid has been applied, wherein the recording medium is regular paper which has no coat layer, the pretreatment liquid contains a cationic polymer compound, a surfactant A, water and a water-soluble organic acid, and the inkjet recording ink contains a water-dispersible colorant, a water-soluble organic solvent, a surfactant B, a penetrating agent and water, and wherein the pretreatment liquid has a static surface tension of 20 mN/m to 30 mN/m. | 11-25-2010 |
20110318543 | LIQUID COMPOSITION, RECORDING METHOD, AND RECORDED MATTER - A liquid composition, which contains: a water-soluble organic acid represented by the following general formula (1); a water-soluble amine represented by the following general formula (2); a water-soluble organic solvent; and water, wherein an amount of the water-soluble amine contained in the liquid composition is 0.9 or larger molar equivalent relative to acid groups contained in the water-soluble organic acid, | 12-29-2011 |
20120036047 | SERVICE PROVIDING SYSTEM, INFORMATION PROCESSING DEVICE, METHOD, AND PROGRAM - The present invention relates to a service providing system, an information processing apparatus, an information processing method, and a program. An information processing apparatus (base unit) | 02-09-2012 |
20120128949 | IMAGE FORMING METHOD, AND IMAGE FORMED MATTER - An image forming method including: applying a pre-treatment liquid onto a coating layer provided on at least one surface of a support of a recording medium, jetting an inkjet ink onto the coating layer, onto which the pre-treatment liquid has been applied, so as to form an image, and applying or jetting a post-treatment liquid onto the coating layer, onto which the inkjet ink has been jetted, so as to form a transparent protective layer on the coating layer, wherein the inkjet ink contains the water-dispersible colorant, a water-soluble organic solvent, a surfactant, a penetrant and water, and wherein an amount of pure water transferred into the recording medium, provided with the coating layer, measured at a contact time of 100 ms with a dynamic scanning liquid absorptometer is 1 ml/m | 05-24-2012 |
20130142452 | IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD - There is provided an image processing device including a depth acquisition unit configured to acquire depth information of an object included in a captured image, an image combining unit configured to combine the object with an image object having depth information according to each piece of the depth information, and an effect processing unit configured to execute effect processing according to the depth information of the object. | 06-06-2013 |
20130321525 | INKJET TREATMENT LIQUID AND IMAGE FORMING METHOD USING TREATMENT LIQUID - To provide an inkjet treatment liquid, containing: a water-soluble coagulant; a water-soluble organic solvent; water; and an amide compound represented by the following general formula: where R is a C1-C6 alkyl group. | 12-05-2013 |
20140002539 | INKJET INK, INKJET RECORDING METHOD, AND INKJET RECORDING DEVICE | 01-02-2014 |
20140212477 | HEMOGLOBIN-CONTAINING LIPOSOME AND METHOD FOR PRODUCING SAME - Provided are a hemoglobin-containing liposome having a specific membrane composition which secures high encapsulation efficiency of hemoglobin and exhibits excellent physical stability and in-vivo stability; and a method for producing the hemoglobin-containing liposome. A hemoglobin-containing liposome includes a hemoglobin solution as an internal fluid of a liposome, in which the membrane of the liposome is constituted of a lipid mixture of a phospholipid, cholesterol, and a saturated higher fatty acid, and a molar ratio of the cholesterol to the phospholipid (cholesterol/phospholipid) is 0.7 to 1.0, and the content of stearic acid in the lipid mixture is 25 to 30 mol %. Preferably, the membrane of the liposome further contains a polyethylene glycol-bound phospholipid in an amount of 0.8 mol % or more relative to the total amount of the lipids constituting the membrane, and the polyethylene glycol-bound phospholipid is bound onto the outer surface of the membrane. | 07-31-2014 |
20140240391 | INKJET INK, INKJET RECORDING METHOD, AND INKJET RECORDING APPARATUS - An inkjet ink of the present invention including: water; an organic solvent; a surfactant; and a colorant, wherein the organic solvent comprises the following (1), (2) and (3): (1) at least one polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at a temperature of 23° C. and humidity of 80% RH; (2) an amide compound expressed by the Structural Formula (I); (3) a compound expressed by the Structural Formula (II); a compound expressed by the Structural Formula (III), or a compound represented by the General Formula (I), or any combination thereof. | 08-28-2014 |
20140358122 | DRUG COATING LAYER - A drug coating layer which is a drug coating layer having a morphological form including a plurality of elongated bodies having long axes that each crystal of a water-insoluble drug independently has on a substrate surface, in which the long axes of the elongated bodies are nearly linear in shape, and the long axes of the elongated bodies form an angle in a predetermined range with respect to a substrate plane with which the long axis of the elongated body intersects. The drug coating layer can provide low toxicity and a high intravascular stenosis inhibitory effect. | 12-04-2014 |
20140368572 | INKJET INK AND INKJET RECORDING DEVICE - To provide an inkjet ink containing: a water-dispersible colorant; a surfactant; a penetrating agent; a water-dispersible resin; a wetting agent containing at least polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at 23° C., 80% RH; a compound represented by the general formula (1); water; and at least one selected from the group consisting of a compound represented by the general formulae (2) to (4), wherein the water-dispersible colorant is at least one selected from the group consisting of a self-dispersible pigment, a pigment dispersed by a pigment dispersing agent, and resin particles each containing a pigment, wherein a total amount of the water-dispersible colorant and the water-dispersible resin is 8% by mass to 35% by mass, and wherein a mass ratio of the water-dispersible resin to the water-dispersible colorant is 2 to 8. | 12-18-2014 |
Patent application number | Description | Published |
20110273075 | DISPLAY DEVICE - A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate. | 11-10-2011 |
20120119207 | INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING INTERCONNECTION STRUCTURE - Disclosed is an interconnection structure which, in a display device such as an organic EL display and a liquid crystal display, is capable of stably connecting a semiconductor layer directly to an Al-base film constituting, for example, a source electrode or a drain electrode; and which hardly causes galvanic corrosion between the semiconductor layer and the Al-base film in an electrolyte solution to be used in a wet process and is able to suppress stripping of the Al-base film. It is an interconnection structure including a semiconductor layer of a thin-film transistor and an Al alloy film connected directly to the semiconductor layer above a substrate in this order from the side of the substrate, wherein the semiconductor layer is composed of an oxide semiconductor, and the Al alloy film contains at least one of Ni and Co. | 05-17-2012 |
20120126227 | INTERCONNECTION STRUCTURE AND DISPLAY DEVICE INCLUDING INTERCONNECTION STRUCTURE - A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided. | 05-24-2012 |
20120301732 | AL ALLOY FILM FOR USE IN DISPLAY DEVICE - Disclosed is an Al alloy film for use in a display device, which does not undergo the formation of hillocks even when exposed to high temperatures of about 450° C. to 600° C., and has excellent high-temperature heat resistance, low electrical resistance (wiring resistance) and excellent corrosion resistance under alkaline environments. Specifically disclosed is an Al alloy film for use in a display device, which comprises at least one element selected from a group X consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf and Ti and at least one rare earth element, and which meets the following requirement (1) when heated at 450° C. to 600° C. (1) Precipitates each having an equivalent circle diameter of 20 nm or more are present at a density of 500,000 particles/mm | 11-29-2012 |
20130026470 | WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE - Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer. | 01-31-2013 |
20140167038 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. | 06-19-2014 |
20140346498 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide. | 11-27-2014 |
20150123116 | THIN FILM TRANSISTOR - Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%. | 05-07-2015 |
20150206978 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less. | 07-23-2015 |
20150228674 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower. | 08-13-2015 |
20150255627 | THIN FILM TRANSISTOR - A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less. | 09-10-2015 |
20150295058 | THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR - Provided is a back-channel etch type thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor of the TFT has excellent resistance to an acid etchant and stress stability. The oxide semiconductor layer is a laminate having a first layer comprising tin, indium, and gallium or zinc, and oxygen, and a second layer comprising one or more elements selected from a group consisting indium, zinc, tin and gallium; and oxygen. The TFT is formed, in the following order, a gate insulator film, the second semiconductor layer and the first semiconductor layer; and having a value in a cross section in the lamination direction of the TFT, as determined by [100×(the first layer thickness of directly below a source-drain electrode end−a center portion thickness of the first layer)/the first layer thickness of directly below the source-drain electrode end], of not more than 5%. | 10-15-2015 |
20150318400 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR - Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end−the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%. | 11-05-2015 |
Patent application number | Description | Published |
20130234081 | OXIDE SINTERED COMPACT AND SPUTTERING TARGET - This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn | 09-12-2013 |
20130313110 | OXIDE SINTERED BODY AND SPUTTERING TARGET - Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more. | 11-28-2013 |
20130334039 | OXIDE SINTERED BODY AND SPUTTERING TARGET - Provided are an oxide sintered body and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the oxide sintered body and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This oxide sintered body is an oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta, and sintering the mixture, the oxide sintered body having a Vickers hardness of 400 Hv or higher. | 12-19-2013 |
20130341183 | OXIDE SINTERED BODY AND SPUTTERING TARGET - Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less. | 12-26-2013 |