Patent application number | Description | Published |
20080246052 | Electronic component assembly with composite material carrier - The present invention relates to an electronic component assembly including a composite material carrier, a circuit carrier made of a dielectric material, a circuit with a conductive material formed on the circuit carrier, an intermediate layer between the circuit carrier and the composite material carrier, and an electronic component arranged on the composite material carrier and electrically connecting to the circuit. | 10-09-2008 |
20090122521 | Light-emiting device package - A light-emitting device package is disclosed and comprises at least one light-emitting device and a carrier. The light-emitting device includes a light-emitting diode chip attached to a first surface of a transparent substrate, wherein the chip comprises a first type conductivity semiconductor layer, an active layer and a second type conductivity semiconductor layer. The carrier comprises a p electrode, an n electrode, a platform and a reflective inside wall. The transparent substrate of the light-emitting device is attached to the platform by an adhering layer. In addition, an angle between the first surface of the transparent substrate and the platform is not equal to zero degree, and the better is about 90 degree. | 05-14-2009 |
20090173963 | Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 07-09-2009 |
20100001312 | Light-emitting device and method for manufacturing the same - A light-emitting device is disclosed. The light-emitting device comprises a substrate, wherein an ion implanted layer on the top surface of the substrate; a thin silicon film disposing on the ion implanted layer; and a light-emitting stack layer on the thin silicon film. This invention also discloses a method of manufacturing a light-emitting device comprising providing a substrate; forming an ion implanted layer on the top surface of the substrate; providing a light-emitting stack layer; forming a thin silicon film on the bottom surface of the light-emitting stack layer; and bonding the light-emitting stack layer to the substrate with the anodic bonding technique. | 01-07-2010 |
20100051996 | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND PACKAGE THEREOF - The present application discloses a light-emitting semiconductor device including a semiconductor light-emitting element, a transparent paste layer and a wavelength conversion structure. A first light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a second light which has a wavelength different from that of the first light. In addition, the present application also provides a light-emitting semiconductor device package. | 03-04-2010 |
20100072497 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region. | 03-25-2010 |
20100120184 | OPTOELECTRONIC DEVICE STRUCTURE - The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer. | 05-13-2010 |
20100133999 | MULTICOLOR PACKAGE - An opto-electronic device package structure for multicolor light is disclosed. The package structure comprises a transparent carrier, a circuit layer on the transparent carrier, an opto-electronic device emitting the light of the first wavelength and is electrically connecting with the circuit layer on the transparent carrier, a first wavelength conversion structure on the lateral side of the opto-electronic device, a reflective layer on the first wavelength conversion structure, and a transparent material for package on the reflective layer and on the opto-electronic device. | 06-03-2010 |
20100163907 | CHIP LEVEL PACKAGE OF LIGHT-EMITTING DIODE - The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure. | 07-01-2010 |
20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 11-11-2010 |
20110006312 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 01-13-2011 |
20110013422 | LIGHT-EMITTING DEVICE - This application relates to a light-emitting device comprising a light channel having an upper surface, a lower surface opposite to the upper surface, an inner surface intersecting with each of the upper and lower surface by different angles, and an escape surface; and a light-emitting element having a bottom surface substantially parallel to the inner surface and emitting light traveling inside the light channel toward the escape surface. In an embodiment, the escape surface of the light-emitting device is an inclined plane with lens array thereon. | 01-20-2011 |
20110193119 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. | 08-11-2011 |
20110241057 | HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad. | 10-06-2011 |
20110254046 | LIGHT-EMITTING DEVICE - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 10-20-2011 |
20120037886 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 02-16-2012 |
20120055532 | SEMICONDUCTOR OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate. | 03-08-2012 |
20120056229 | LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located. | 03-08-2012 |
20120080697 | LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS - A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer. | 04-05-2012 |
20120146087 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer. | 06-14-2012 |
20120256164 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system. | 10-11-2012 |
20120299043 | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND PACKAGE THEREOF - The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall. | 11-29-2012 |
20120322180 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME - A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology. | 12-20-2012 |
20130003344 | LIGHT-EMITTING DEVICE PACKAGE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 01-03-2013 |
20130200414 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; wherein the first surface and the surface comprise an included angle larger than zero; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 08-08-2013 |
20130201321 | METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE - Disclosed is a method for testing a light-emitting device comprising the steps of: providing an integrating sphere comprising an inlet port and a first exit port; disposing the light-emitting device close to the inlet port of the integrating sphere; providing a current source to drive the light-emitting device to form an image of the light-emitting device in driven state; providing an image receiving device and to receive the image of the light-emitting device, wherein the image receiving device is connected to the first exit port of the integrating sphere; and determining a luminous intensity of the light-emitting device according to the image. An apparatus for testing a light-emitting device is also disclosed. The apparatus for testing a light-emitting device comprises: an integrating sphere comprising an inlet port and a first exit port, wherein the light-emitting device is disposed close to the inlet port of the integrating sphere; an image receiving device connected to the first exit port of the integrating sphere for receiving an image of the light-emitting device; and a processing unit coupled to image receiving device for determining a luminous intensity of the light-emitting device. | 08-08-2013 |
20130201483 | METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE - Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes with the image. An apparatus for testing a light-emitting device comprising a plurality of light-emitting diodes is also disclosed. The apparatus comprises: a current source to provide a current to drive the plurality of the light-emitting diodes; an image receiving device for receiving an image of the light-emitting device in the driven state; and a processing unit for determining a luminous intensity of each of the light-emitting diodes with the image. | 08-08-2013 |
20130228802 | LIGHT-EMITTING DIODE DEVICE - A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%. | 09-05-2013 |
20130240923 | HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack. | 09-19-2013 |
20130240924 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer. | 09-19-2013 |
20130273673 | METHOD FOR FORMING LIGHT-EMITTING DEVICE - A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements. | 10-17-2013 |
20140014994 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. | 01-16-2014 |
20140021505 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer. | 01-23-2014 |
20140048836 | LIGHTING EMITTING DEVICE WITH ALIGNED-BONDING AND THE MANUFACTURING METHOD THEREOF - A light-emitting device comprises a semiconductor light-emitting stacked layer having a first connecting surface, wherein the semiconductor light-emitting stacked layer comprises a first alignment pattern on the first connecting surface, and a substrate under the semiconductor light-emitting stacked layer, wherein the substrate has a second connecting surface being operable for connecting with the first connecting surface, wherein the substrate comprises a second alignment pattern on the second connecting surface, and the second alignment pattern is corresponding to the first alignment pattern. | 02-20-2014 |
20140162386 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface. | 06-12-2014 |
20140167771 | METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE - Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with a current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes; wherein the magnitude of the current is determined such that the current density driving each of the light-emitting diodes is smaller than or equal to 300 mA/mm | 06-19-2014 |
20140193232 | APPARATUS FOR FLIPPING SEMICONDUCTOR DEVICE - An apparatus for flipping a semiconductor device comprises a platform comprising a carrier and a roller system, a positioning unit above the platform and comprising a circular opening, and an elevating unit connecting the platform and the positioning unit. | 07-10-2014 |
20140234997 | Light-Emitting Device - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 08-21-2014 |
20150014721 | LIGHT-EMITTING ELEMENT - A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4. | 01-15-2015 |
20150028369 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units. | 01-29-2015 |
20150034996 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; a first semiconductor stack formed on the substrate; a connecting part formed on the first semiconductor stack; and a plurality of droplets formed near the connecting part, wherein the plurality of droplets comprises a material same as that of the connecting part. | 02-05-2015 |
20150054016 | LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located. | 02-26-2015 |
20150084086 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 03-26-2015 |