Patent application number | Description | Published |
20080314321 | PLASMA PROCESSING APPARATUS - The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y | 12-25-2008 |
20100050349 | Cleaning apparatus and cleaning method - The invention provides a cleaning apparatus for removing particles attached to the fine roughness on the surface of an insulating body coated on the metal surface of a vacuum processing apparatus. The present cleaning apparatus comprises an adhesive sheet | 03-04-2010 |
20100050938 | Plasma processing apparatus - A plasma processing apparatus includes a sheet-like electrode for receiving high frequency signals from a plasma, a signal line connected to the electrode, a signal outputter which outputs high frequency signals from the electrode to the exterior, and a controller including of a physical quantity detecting unit, a measurement data storage unit, a measurement processing unit, and a control unit for controlling the apparatus parameters in response to signals from the measurement processing unit and performing control so as to stabilize the plasma condition. The signal line of the sheet-like electrode is formed between at least two layers of dielectric protection film formed on the surface of inner wall/inner cylinder | 03-04-2010 |
20100206845 | PLASMA PROCESSING APPARATUS AND METHOD FOR OPERATING THE SAME - The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port | 08-19-2010 |
20100294315 | Cleaning Method - A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity. | 11-25-2010 |
Patent application number | Description | Published |
20080236494 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus, comprising: a processing chamber arranged within a vacuum vessel; a sample table arranged within the processing chamber on which a sample to be processed is placed; electric field supplying means for supplying an electric field to form plasma within the processing chamber; a plate member formed of a dielectric material for constituting a ceiling plane of the processing chamber and transmitting the electric field; a cover member formed of a dielectric material for constituting a part of a side wall for the entire circumference of the processing chamber, facing the plasma, and propagating the electric field radiated from the plate member; and a conductive member internally arranged for almost the entire circumference of the cover member. | 10-02-2008 |
20080236744 | Plasma etching equipment - To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive. | 10-02-2008 |
20090183835 | ETCHING PROCESS APPARATUS AND MEMBER FOR ETCHING PROCESS CHAMBER - It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. | 07-23-2009 |
20130189800 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes. | 07-25-2013 |